JP6002403B2 - 光電変換装置 - Google Patents

光電変換装置 Download PDF

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Publication number
JP6002403B2
JP6002403B2 JP2012034641A JP2012034641A JP6002403B2 JP 6002403 B2 JP6002403 B2 JP 6002403B2 JP 2012034641 A JP2012034641 A JP 2012034641A JP 2012034641 A JP2012034641 A JP 2012034641A JP 6002403 B2 JP6002403 B2 JP 6002403B2
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JP
Japan
Prior art keywords
semiconductor layer
silicon substrate
crystalline silicon
layer
light
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Expired - Fee Related
Application number
JP2012034641A
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English (en)
Japanese (ja)
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JP2012191186A5 (enExample
JP2012191186A (ja
Inventor
山崎　舜平
舜平 山崎
史人 井坂
史人 井坂
治朗 西田
治朗 西田
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Semiconductor Energy Laboratory Co Ltd
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Semiconductor Energy Laboratory Co Ltd
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Publication date
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Priority to JP2012034641A priority Critical patent/JP6002403B2/ja
Publication of JP2012191186A publication Critical patent/JP2012191186A/ja
Publication of JP2012191186A5 publication Critical patent/JP2012191186A5/ja
Application granted granted Critical
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Expired - Fee Related legal-status Critical Current
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00—Individual photovoltaic cells, e.g. solar cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/129—Passivating
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00—Individual photovoltaic cells, e.g. solar cells
    • H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00—Individual photovoltaic cells, e.g. solar cells
    • H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
    • H10F10/16—Photovoltaic cells having only PN heterojunction potential barriers
    • H10F10/164—Photovoltaic cells having only PN heterojunction potential barriers comprising heterojunctions with Group IV materials, e.g. ITO/Si or GaAs/SiGe photovoltaic cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00—Individual photovoltaic cells, e.g. solar cells
    • H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
    • H10F10/17—Photovoltaic cells having only PIN junction potential barriers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/121—The active layers comprising only Group IV materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/20—Electrodes
    • H10F77/244—Electrodes made of transparent conductive layers, e.g. transparent conductive oxide [TCO] layers
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/547—Monocrystalline silicon PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/548—Amorphous silicon PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/549—Organic PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

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  • Photovoltaic Devices (AREA)
  • Electroluminescent Light Sources (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Sustainable Development (AREA)
  • Sustainable Energy (AREA)
JP2012034641A 2011-02-21 2012-02-21 光電変換装置 Expired - Fee Related JP6002403B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2012034641A JP6002403B2 (ja) 2011-02-21 2012-02-21 光電変換装置

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2011034621 2011-02-21
JP2011034621 2011-02-21
JP2012034641A JP6002403B2 (ja) 2011-02-21 2012-02-21 光電変換装置

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2016050975A Division JP6039154B2 (ja) 2011-02-21 2016-03-15 光電変換装置

Publications (3)

Publication Number Publication Date
JP2012191186A JP2012191186A (ja) 2012-10-04
JP2012191186A5 JP2012191186A5 (enExample) 2015-04-02
JP6002403B2 true JP6002403B2 (ja) 2016-10-05

Family

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Family Applications (2)

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JP2012034641A Expired - Fee Related JP6002403B2 (ja) 2011-02-21 2012-02-21 光電変換装置
JP2016050975A Expired - Fee Related JP6039154B2 (ja) 2011-02-21 2016-03-15 光電変換装置

Family Applications After (1)

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JP2016050975A Expired - Fee Related JP6039154B2 (ja) 2011-02-21 2016-03-15 光電変換装置

Country Status (4)

Country Link
US (1) US9093601B2 (enExample)
JP (2) JP6002403B2 (enExample)
KR (1) KR20120095790A (enExample)
TW (1) TWI599061B (enExample)

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* Cited by examiner, † Cited by third party
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US9437758B2 (en) 2011-02-21 2016-09-06 Semiconductor Energy Laboratory Co., Ltd. Photoelectric conversion device
JP2013058562A (ja) 2011-09-07 2013-03-28 Semiconductor Energy Lab Co Ltd 光電変換装置
JP6108858B2 (ja) 2012-02-17 2017-04-05 株式会社半導体エネルギー研究所 ｐ型半導体材料および半導体装置
JP5824618B2 (ja) * 2013-03-01 2015-11-25 パナソニックＩｐマネジメント株式会社 シリコン基板
JP6198417B2 (ja) * 2013-03-08 2017-09-20 大阪瓦斯株式会社 全固体型太陽電池
JP2015046424A (ja) * 2013-08-27 2015-03-12 大阪瓦斯株式会社 有機層含有全固体型太陽電池及びその製造方法
JP6058212B2 (ja) * 2014-04-16 2017-01-11 三菱電機株式会社 太陽電池および太陽電池の製造方法
CN106688109A (zh) * 2015-06-25 2017-05-17 华为技术有限公司 一种光电探测器
JP2017126737A (ja) * 2016-01-08 2017-07-20 株式会社カネカ 光電変換素子および光電変換素子の製造方法
US9890240B2 (en) 2016-05-25 2018-02-13 International Business Machines Corporation Ladder polybenzodifurans
KR102377576B1 (ko) 2016-05-27 2022-03-22 세이코 엡슨 가부시키가이샤 액체 수용체 및 액체 분사 시스템
AT519193A1 (de) * 2016-09-01 2018-04-15 Univ Linz Optoelektronischer Infrarotsensor
US10312444B2 (en) 2016-10-06 2019-06-04 International Business Machines Corporation Organic semiconductors with dithienofuran core monomers
US20180158968A1 (en) * 2016-12-05 2018-06-07 Lg Electronics Inc. Solar cell and method of manufacturing the same
US11049720B2 (en) * 2018-10-19 2021-06-29 Kla Corporation Removable opaque coating for accurate optical topography measurements on top surfaces of transparent films
CN109786503A (zh) * 2018-12-29 2019-05-21 浙江师范大学 用氧化钼对单晶硅表面进行钝化的方法

Family Cites Families (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59172274A (ja) * 1983-03-18 1984-09-28 Sanyo Electric Co Ltd 光起電力装置の製造方法
JPH0795603B2 (ja) 1990-09-20 1995-10-11 三洋電機株式会社 光起電力装置
US5213628A (en) 1990-09-20 1993-05-25 Sanyo Electric Co., Ltd. Photovoltaic device
JP3526308B2 (ja) * 1993-02-18 2004-05-10 株式会社日立製作所 受光素子
JP3106810B2 (ja) 1993-11-04 2000-11-06 富士電機株式会社 非晶質酸化シリコン薄膜の生成方法
JPH09116179A (ja) * 1995-10-20 1997-05-02 Sanyo Electric Co Ltd 光起電力素子
US6133119A (en) 1996-07-08 2000-10-17 Semiconductor Energy Laboratory Co., Ltd. Photoelectric conversion device and method manufacturing same
JP3469729B2 (ja) 1996-10-31 2003-11-25 三洋電機株式会社 太陽電池素子
JP2003282905A (ja) * 2002-03-26 2003-10-03 Sanyo Electric Co Ltd 太陽電池及びその製造方法
CN100422269C (zh) 2003-03-26 2008-10-01 株式会社半导体能源研究所 有机-无机混合材料、用于合成上述有机-无机混合材料的组合物以及上述有机-无机混合材料的制备方法
TWI407612B (zh) 2003-09-26 2013-09-01 Semiconductor Energy Lab 發光元件和其製法
US8129822B2 (en) * 2006-10-09 2012-03-06 Solexel, Inc. Template for three-dimensional thin-film solar cell manufacturing and methods of use
JP5227497B2 (ja) * 2004-12-06 2013-07-03 株式会社半導体エネルギー研究所 光電変換素子の作製方法
JP4712372B2 (ja) 2004-12-16 2011-06-29 株式会社半導体エネルギー研究所 発光装置
US7554031B2 (en) * 2005-03-03 2009-06-30 Sunpower Corporation Preventing harmful polarization of solar cells
JP5121203B2 (ja) * 2006-09-29 2013-01-16 三洋電機株式会社 太陽電池モジュール
US20090139558A1 (en) * 2007-11-29 2009-06-04 Shunpei Yamazaki Photoelectric conversion device and manufacturing method thereof
EP2075850A3 (en) * 2007-12-28 2011-08-24 Semiconductor Energy Laboratory Co, Ltd. Photoelectric conversion device and manufacturing method thereof
US7888167B2 (en) * 2008-04-25 2011-02-15 Semiconductor Energy Laboratory Co., Ltd. Photoelectric conversion device and method for manufacturing the same
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US9437758B2 (en) * 2011-02-21 2016-09-06 Semiconductor Energy Laboratory Co., Ltd. Photoelectric conversion device

Also Published As

Publication number Publication date
US9093601B2 (en) 2015-07-28
US20120211081A1 (en) 2012-08-23
TWI599061B (zh) 2017-09-11
KR20120095790A (ko) 2012-08-29
JP6039154B2 (ja) 2016-12-07
JP2016106434A (ja) 2016-06-16
JP2012191186A (ja) 2012-10-04
TW201244118A (en) 2012-11-01

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