JP6001292B2 - エミッタの作製方法 - Google Patents

エミッタの作製方法 Download PDF

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Publication number
JP6001292B2
JP6001292B2 JP2012068032A JP2012068032A JP6001292B2 JP 6001292 B2 JP6001292 B2 JP 6001292B2 JP 2012068032 A JP2012068032 A JP 2012068032A JP 2012068032 A JP2012068032 A JP 2012068032A JP 6001292 B2 JP6001292 B2 JP 6001292B2
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JP
Japan
Prior art keywords
emitter
tip
gas
sharpened
ion beam
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP2012068032A
Other languages
English (en)
Japanese (ja)
Other versions
JP2013200991A5 (enExample
JP2013200991A (ja
Inventor
杉山　安彦
安彦 杉山
和男 相田
和男 相田
文朗 荒巻
文朗 荒巻
智一 小堺
智一 小堺
松田　修
修 松田
行人 八坂
行人 八坂
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi High-Tech Analysis Corp
Original Assignee
Hitachi High Tech Science Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi High Tech Science Corp filed Critical Hitachi High Tech Science Corp
Priority to JP2012068032A priority Critical patent/JP6001292B2/ja
Priority to US13/845,630 priority patent/US8764994B2/en
Priority to DE102013102777.6A priority patent/DE102013102777B4/de
Publication of JP2013200991A publication Critical patent/JP2013200991A/ja
Priority to US14/278,760 priority patent/US8999178B2/en
Publication of JP2013200991A5 publication Critical patent/JP2013200991A5/ja
Application granted granted Critical
Publication of JP6001292B2 publication Critical patent/JP6001292B2/ja
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J27/00—Ion beam tubes
    • H01J27/02—Ion sources; Ion guns
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J1/00—Details of electrodes, of magnetic control means, of screens, or of the mounting or spacing thereof, common to two or more basic types of discharge tubes or lamps
    • H01J1/02—Main electrodes
    • H01J1/13—Solid thermionic cathodes
    • H01J1/15—Cathodes heated directly by an electric current
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J1/00—Details of electrodes, of magnetic control means, of screens, or of the mounting or spacing thereof, common to two or more basic types of discharge tubes or lamps
    • H01J1/02—Main electrodes
    • H01J1/30—Cold cathodes, e.g. field-emissive cathode
    • H01J1/304—Field-emissive cathodes
    • H01J1/3042—Field-emissive cathodes microengineered, e.g. Spindt-type
    • H01J1/3044—Point emitters
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement or ion-optical arrangement
    • H01J37/08—Ion sources; Ion guns
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/305—Electron-beam or ion-beam tubes for localised treatment of objects for casting, melting, evaporating, or etching
    • H01J37/3053—Electron-beam or ion-beam tubes for localised treatment of objects for casting, melting, evaporating, or etching for evaporating or etching
    • H01J37/3056—Electron-beam or ion-beam tubes for localised treatment of objects for casting, melting, evaporating, or etching for evaporating or etching for microworking, e. g. etching of gratings or trimming of electrical components
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J9/00—Apparatus or processes specially adapted for the manufacture, installation, removal, maintenance of electric discharge tubes, discharge lamps, or parts thereof; Recovery of material from discharge tubes or lamps
    • H01J9/02—Manufacture of electrodes or electrode systems
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J9/00—Apparatus or processes specially adapted for the manufacture, installation, removal, maintenance of electric discharge tubes, discharge lamps, or parts thereof; Recovery of material from discharge tubes or lamps
    • H01J9/02—Manufacture of electrodes or electrode systems
    • H01J9/022—Manufacture of electrodes or electrode systems of cold cathodes
    • H01J9/025—Manufacture of electrodes or electrode systems of cold cathodes of field emission cathodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J9/00—Apparatus or processes specially adapted for the manufacture, installation, removal, maintenance of electric discharge tubes, discharge lamps, or parts thereof; Recovery of material from discharge tubes or lamps
    • H01J9/02—Manufacture of electrodes or electrode systems
    • H01J9/04—Manufacture of electrodes or electrode systems of thermionic cathodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/30—Electron or ion beam tubes for processing objects
    • H01J2237/317—Processing objects on a microscale
    • H01J2237/3174—Etching microareas
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/30—Electron or ion beam tubes for processing objects
    • H01J2237/317—Processing objects on a microscale
    • H01J2237/31749—Focused ion beam
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/26—Electron or ion microscopes; Electron or ion diffraction tubes

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Combustion & Propulsion (AREA)
  • Electron Sources, Ion Sources (AREA)
  • Cold Cathode And The Manufacture (AREA)
JP2012068032A 2012-03-23 2012-03-23 エミッタの作製方法 Expired - Fee Related JP6001292B2 (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP2012068032A JP6001292B2 (ja) 2012-03-23 2012-03-23 エミッタの作製方法
US13/845,630 US8764994B2 (en) 2012-03-23 2013-03-18 Method for fabricating emitter
DE102013102777.6A DE102013102777B4 (de) 2012-03-23 2013-03-19 Verfahren zum Herstellen eines Emitters
US14/278,760 US8999178B2 (en) 2012-03-23 2014-05-15 Method for fabricating emitter

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2012068032A JP6001292B2 (ja) 2012-03-23 2012-03-23 エミッタの作製方法

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2016025766A Division JP6236480B2 (ja) 2016-02-15 2016-02-15 エミッタの作製方法

Publications (3)

Publication Number Publication Date
JP2013200991A JP2013200991A (ja) 2013-10-03
JP2013200991A5 JP2013200991A5 (enExample) 2015-03-05
JP6001292B2 true JP6001292B2 (ja) 2016-10-05

Family

ID=49210800

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2012068032A Expired - Fee Related JP6001292B2 (ja) 2012-03-23 2012-03-23 エミッタの作製方法

Country Status (3)

Country Link
US (2) US8764994B2 (enExample)
JP (1) JP6001292B2 (enExample)
DE (1) DE102013102777B4 (enExample)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6001292B2 (ja) * 2012-03-23 2016-10-05 株式会社日立ハイテクサイエンス エミッタの作製方法
JP6266458B2 (ja) * 2013-08-09 2018-01-24 株式会社日立ハイテクサイエンス イリジウムティップ、ガス電界電離イオン源、集束イオンビーム装置、電子源、電子顕微鏡、電子ビーム応用分析装置、イオン電子複合ビーム装置、走査プローブ顕微鏡、およびマスク修正装置
JP6328023B2 (ja) * 2014-10-08 2018-05-23 株式会社日立ハイテクノロジーズ イオンビーム装置
US10133181B2 (en) 2015-08-14 2018-11-20 Kla-Tencor Corporation Electron source
US9966230B1 (en) * 2016-10-13 2018-05-08 Kla-Tencor Corporation Multi-column electron beam lithography including field emitters on a silicon substrate with boron layer
JP2019145443A (ja) * 2018-02-23 2019-08-29 株式会社日立ハイテクサイエンス エミッターの作製方法
JP2020161262A (ja) 2019-03-26 2020-10-01 株式会社日立ハイテクサイエンス エミッタの作製方法、エミッタ及び集束イオンビーム装置
WO2021079855A1 (ja) * 2019-10-21 2021-04-29 国立研究開発法人物質・材料研究機構 エミッタ、それを用いた電子銃、それを用いた電子機器、および、その製造方法
CN111105091A (zh) * 2019-12-19 2020-05-05 中国石油大港油田勘探开发研究院 一种地下储气库日调峰产量确定方法
EP3945539B1 (en) 2020-07-31 2023-06-07 Centre National de la Recherche Scientifique A gas ion gun
US20240203682A1 (en) * 2021-09-13 2024-06-20 Hitachi High-Tech Corporation Ion beam device and emitter tip milling method
KR102864731B1 (ko) * 2022-12-23 2025-09-24 동아대학교 산학협력단 전기화학적 분석을 위한 전극의 제조방법

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH07240165A (ja) 1994-02-25 1995-09-12 Jeol Ltd 電界電離型ガスフェーズイオン源の調整方法及びイオン源
JP3582855B2 (ja) * 1994-07-22 2004-10-27 電気化学工業株式会社 熱電界放射陰極及びその製造方法
US7368727B2 (en) * 2003-10-16 2008-05-06 Alis Technology Corporation Atomic level ion source and method of manufacture and operation
JP2008293844A (ja) * 2007-05-25 2008-12-04 Kiyoyoshi Mizuno 電子源用探針およびその製造方法
US7737414B2 (en) * 2007-10-26 2010-06-15 Academia Sinica Atomically sharp iridium tip
US20100006447A1 (en) * 2008-07-08 2010-01-14 Ict, Integrated Circuit Testing Gesellschaft Fuer Halbleiterprueftechnik Mbh Method of preparing an ultra sharp tip, apparatus for preparing an ultra sharp tip, and use of an apparatus
JP2011044254A (ja) * 2009-08-19 2011-03-03 Sumitomo Electric Ind Ltd 電子放出素子、及び、電子放出素子の作製方法
JP2011124099A (ja) * 2009-12-10 2011-06-23 Jeol Ltd 荷電粒子線装置のエミッタ、その製造方法、および当該エミッタを備える荷電粒子線装置
JP2011249034A (ja) * 2010-05-24 2011-12-08 Sumitomo Electric Ind Ltd 突起構造体、及び、突起構造体を製造する方法
JP2012068032A (ja) 2010-09-21 2012-04-05 Tesetsuku:Kk Ｔｃｐ試験装置
JP6001292B2 (ja) * 2012-03-23 2016-10-05 株式会社日立ハイテクサイエンス エミッタの作製方法

Also Published As

Publication number Publication date
DE102013102777B4 (de) 2021-03-11
US20140246397A1 (en) 2014-09-04
JP2013200991A (ja) 2013-10-03
US20130248483A1 (en) 2013-09-26
US8999178B2 (en) 2015-04-07
DE102013102777A1 (de) 2014-09-25
US8764994B2 (en) 2014-07-01

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