JP2013200991A5 - - Google Patents

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Publication number
JP2013200991A5
JP2013200991A5 JP2012068032A JP2012068032A JP2013200991A5 JP 2013200991 A5 JP2013200991 A5 JP 2013200991A5 JP 2012068032 A JP2012068032 A JP 2012068032A JP 2012068032 A JP2012068032 A JP 2012068032A JP 2013200991 A5 JP2013200991 A5 JP 2013200991A5
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JP
Japan
Prior art keywords
emitter
tip
manufacturing
etching
emitter material
Prior art date
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Application number
JP2012068032A
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English (en)
Japanese (ja)
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JP2013200991A (ja
JP6001292B2 (ja
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Application filed filed Critical
Priority to JP2012068032A priority Critical patent/JP6001292B2/ja
Priority claimed from JP2012068032A external-priority patent/JP6001292B2/ja
Priority to US13/845,630 priority patent/US8764994B2/en
Priority to DE102013102777.6A priority patent/DE102013102777B4/de
Publication of JP2013200991A publication Critical patent/JP2013200991A/ja
Priority to US14/278,760 priority patent/US8999178B2/en
Publication of JP2013200991A5 publication Critical patent/JP2013200991A5/ja
Application granted granted Critical
Publication of JP6001292B2 publication Critical patent/JP6001292B2/ja
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

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JP2012068032A 2012-03-23 2012-03-23 エミッタの作製方法 Expired - Fee Related JP6001292B2 (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP2012068032A JP6001292B2 (ja) 2012-03-23 2012-03-23 エミッタの作製方法
US13/845,630 US8764994B2 (en) 2012-03-23 2013-03-18 Method for fabricating emitter
DE102013102777.6A DE102013102777B4 (de) 2012-03-23 2013-03-19 Verfahren zum Herstellen eines Emitters
US14/278,760 US8999178B2 (en) 2012-03-23 2014-05-15 Method for fabricating emitter

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2012068032A JP6001292B2 (ja) 2012-03-23 2012-03-23 エミッタの作製方法

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2016025766A Division JP6236480B2 (ja) 2016-02-15 2016-02-15 エミッタの作製方法

Publications (3)

Publication Number Publication Date
JP2013200991A JP2013200991A (ja) 2013-10-03
JP2013200991A5 true JP2013200991A5 (enExample) 2015-03-05
JP6001292B2 JP6001292B2 (ja) 2016-10-05

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ID=49210800

Family Applications (1)

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JP2012068032A Expired - Fee Related JP6001292B2 (ja) 2012-03-23 2012-03-23 エミッタの作製方法

Country Status (3)

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US (2) US8764994B2 (enExample)
JP (1) JP6001292B2 (enExample)
DE (1) DE102013102777B4 (enExample)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6001292B2 (ja) * 2012-03-23 2016-10-05 株式会社日立ハイテクサイエンス エミッタの作製方法
JP6266458B2 (ja) * 2013-08-09 2018-01-24 株式会社日立ハイテクサイエンス イリジウムティップ、ガス電界電離イオン源、集束イオンビーム装置、電子源、電子顕微鏡、電子ビーム応用分析装置、イオン電子複合ビーム装置、走査プローブ顕微鏡、およびマスク修正装置
JP6328023B2 (ja) * 2014-10-08 2018-05-23 株式会社日立ハイテクノロジーズ イオンビーム装置
US10133181B2 (en) 2015-08-14 2018-11-20 Kla-Tencor Corporation Electron source
US9966230B1 (en) * 2016-10-13 2018-05-08 Kla-Tencor Corporation Multi-column electron beam lithography including field emitters on a silicon substrate with boron layer
JP2019145443A (ja) * 2018-02-23 2019-08-29 株式会社日立ハイテクサイエンス エミッターの作製方法
JP2020161262A (ja) 2019-03-26 2020-10-01 株式会社日立ハイテクサイエンス エミッタの作製方法、エミッタ及び集束イオンビーム装置
WO2021079855A1 (ja) * 2019-10-21 2021-04-29 国立研究開発法人物質・材料研究機構 エミッタ、それを用いた電子銃、それを用いた電子機器、および、その製造方法
CN111105091A (zh) * 2019-12-19 2020-05-05 中国石油大港油田勘探开发研究院 一种地下储气库日调峰产量确定方法
EP3945539B1 (en) 2020-07-31 2023-06-07 Centre National de la Recherche Scientifique A gas ion gun
US20240203682A1 (en) * 2021-09-13 2024-06-20 Hitachi High-Tech Corporation Ion beam device and emitter tip milling method
KR102864731B1 (ko) * 2022-12-23 2025-09-24 동아대학교 산학협력단 전기화학적 분석을 위한 전극의 제조방법

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH07240165A (ja) 1994-02-25 1995-09-12 Jeol Ltd 電界電離型ガスフェーズイオン源の調整方法及びイオン源
JP3582855B2 (ja) * 1994-07-22 2004-10-27 電気化学工業株式会社 熱電界放射陰極及びその製造方法
US7368727B2 (en) * 2003-10-16 2008-05-06 Alis Technology Corporation Atomic level ion source and method of manufacture and operation
JP2008293844A (ja) * 2007-05-25 2008-12-04 Kiyoyoshi Mizuno 電子源用探針およびその製造方法
US7737414B2 (en) * 2007-10-26 2010-06-15 Academia Sinica Atomically sharp iridium tip
US20100006447A1 (en) * 2008-07-08 2010-01-14 Ict, Integrated Circuit Testing Gesellschaft Fuer Halbleiterprueftechnik Mbh Method of preparing an ultra sharp tip, apparatus for preparing an ultra sharp tip, and use of an apparatus
JP2011044254A (ja) * 2009-08-19 2011-03-03 Sumitomo Electric Ind Ltd 電子放出素子、及び、電子放出素子の作製方法
JP2011124099A (ja) * 2009-12-10 2011-06-23 Jeol Ltd 荷電粒子線装置のエミッタ、その製造方法、および当該エミッタを備える荷電粒子線装置
JP2011249034A (ja) * 2010-05-24 2011-12-08 Sumitomo Electric Ind Ltd 突起構造体、及び、突起構造体を製造する方法
JP2012068032A (ja) 2010-09-21 2012-04-05 Tesetsuku:Kk Ｔｃｐ試験装置
JP6001292B2 (ja) * 2012-03-23 2016-10-05 株式会社日立ハイテクサイエンス エミッタの作製方法

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