JP5990574B2 - フリップチップｌｅｄのためのｐ−ｎ分離メタルフィル - Google Patents

フリップチップｌｅｄのためのｐ−ｎ分離メタルフィル Download PDF

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JP5990574B2
JP5990574B2 JP2014511976A JP2014511976A JP5990574B2 JP 5990574 B2 JP5990574 B2 JP 5990574B2 JP 2014511976 A JP2014511976 A JP 2014511976A JP 2014511976 A JP2014511976 A JP 2014511976A JP 5990574 B2 JP5990574 B2 JP 5990574B2
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electrode
layer
metal layer
conductive layer
submount
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JP2014515557A (ja
JP2014515557A5 (cg-RX-API-DMAC10.html
Inventor
ジプ レイ
ジプ レイ
ヤジュン ウェイ
ヤジュン ウェイ
アレクサンダー エイチ ニッケル
アレクサンダー エイチ ニッケル
ステファノ シアフィーノ
ステファノ シアフィーノ
ダニエル アレクサンダー スタイガーワルド
ダニエル アレクサンダー スタイガーワルド
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Koninklijke Philips NV
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Koninklijke Philips NV
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/857—Interconnections, e.g. lead-frames, bond wires or solder balls
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/011—Manufacture or treatment of bodies, e.g. forming semiconductor layers
    • H10H20/018—Bonding of wafers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/84—Coatings, e.g. passivation layers or antireflective coatings
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/8506—Containers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/036—Manufacture or treatment of packages
    • H10H20/0364—Manufacture or treatment of packages of interconnections
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/20—Bump connectors, e.g. solder bumps or copper pillars; Dummy bumps; Thermal bumps
    • H10W72/221—Structures or relative sizes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/20—Bump connectors, e.g. solder bumps or copper pillars; Dummy bumps; Thermal bumps
    • H10W72/221—Structures or relative sizes
    • H10W72/227—Multiple bumps having different sizes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/20—Bump connectors, e.g. solder bumps or copper pillars; Dummy bumps; Thermal bumps
    • H10W72/231—Shapes
    • H10W72/237—Multiple bump connectors having different shapes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/20—Bump connectors, e.g. solder bumps or copper pillars; Dummy bumps; Thermal bumps
    • H10W72/241—Dispositions, e.g. layouts
    • H10W72/242—Dispositions, e.g. layouts relative to the surface, e.g. recessed, protruding
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/20—Bump connectors, e.g. solder bumps or copper pillars; Dummy bumps; Thermal bumps
    • H10W72/251—Materials
    • H10W72/252—Materials comprising solid metals or solid metalloids, e.g. PbSn, Ag or Cu
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/20—Bump connectors, e.g. solder bumps or copper pillars; Dummy bumps; Thermal bumps
    • H10W72/261—Functions other than electrical connecting
    • H10W72/263—Providing mechanical bonding or support, e.g. dummy bumps
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/20—Bump connectors, e.g. solder bumps or copper pillars; Dummy bumps; Thermal bumps
    • H10W72/261—Functions other than electrical connecting
    • H10W72/267—Multiple bump connectors having different functions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00—Encapsulations, e.g. protective coatings
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/721—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bump connectors
    • H10W90/724—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bump connectors between a chip and a stacked insulating package substrate, interposer or RDL
JP2014511976A 2011-05-24 2012-04-25 フリップチップｌｅｄのためのｐ−ｎ分離メタルフィル Active JP5990574B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US201161489280P 2011-05-24 2011-05-24
US61/489,280 2011-05-24
PCT/IB2012/052062 WO2012160455A1 (en) 2011-05-24 2012-04-25 P-n separation metal fill for flip chip leds

Publications (3)

Publication Number Publication Date
JP2014515557A JP2014515557A (ja) 2014-06-30
JP2014515557A5 JP2014515557A5 (cg-RX-API-DMAC10.html) 2015-06-18
JP5990574B2 true JP5990574B2 (ja) 2016-09-14

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JP2014511976A Active JP5990574B2 (ja) 2011-05-24 2012-04-25 フリップチップｌｅｄのためのｐ−ｎ分離メタルフィル

Country Status (9)

Country Link
US (3) US9219209B2 (cg-RX-API-DMAC10.html)
EP (1) EP2715813B1 (cg-RX-API-DMAC10.html)
JP (1) JP5990574B2 (cg-RX-API-DMAC10.html)
KR (1) KR101932996B1 (cg-RX-API-DMAC10.html)
CN (1) CN103548162B (cg-RX-API-DMAC10.html)
BR (1) BR112013029686A2 (cg-RX-API-DMAC10.html)
RU (1) RU2597071C2 (cg-RX-API-DMAC10.html)
TW (1) TWI569469B (cg-RX-API-DMAC10.html)
WO (1) WO2012160455A1 (cg-RX-API-DMAC10.html)

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US8816383B2 (en) * 2012-07-06 2014-08-26 Invensas Corporation High performance light emitting diode with vias
DE102014102292A1 (de) * 2014-02-21 2015-08-27 Osram Opto Semiconductors Gmbh Verfahren zur Herstellung eines optoelektronischen Bauelements
CN105591006A (zh) * 2014-10-20 2016-05-18 展晶科技(深圳)有限公司 覆晶式led封装体
US10158164B2 (en) 2015-10-30 2018-12-18 Essential Products, Inc. Handheld mobile device with hidden antenna formed of metal injection molded substrate
US9896777B2 (en) 2015-10-30 2018-02-20 Essential Products, Inc. Methods of manufacturing structures having concealed components
US10741486B2 (en) 2016-03-06 2020-08-11 Intel Corporation Electronic components having three-dimensional capacitors in a metallization stack
US11024611B1 (en) * 2017-06-09 2021-06-01 Goertek, Inc. Micro-LED array transfer method, manufacturing method and display device
US11183616B2 (en) * 2018-09-26 2021-11-23 Lumileds Llc Phosphor converter structures for thin film packages and method of manufacture
CN112968094B (zh) * 2020-07-13 2022-03-01 重庆康佳光电技术研究院有限公司 一种倒装led芯片及其制备方法、显示面板
CN114284413B (zh) * 2021-12-30 2023-04-11 江苏第三代半导体研究院有限公司 半导体器件的电极制作方法及半导体器件
KR20240079696A (ko) * 2022-11-29 2024-06-05 엘지디스플레이 주식회사 표시 장치
TWI847685B (zh) * 2023-05-10 2024-07-01 隆達電子股份有限公司 半導體結構及其形成方法

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US6486499B1 (en) * 1999-12-22 2002-11-26 Lumileds Lighting U.S., Llc III-nitride light-emitting device with increased light generating capability
US6957899B2 (en) * 2002-10-24 2005-10-25 Hongxing Jiang Light emitting diodes for high AC voltage operation and general lighting
US20040211972A1 (en) 2003-04-22 2004-10-28 Gelcore, Llc Flip-chip light emitting diode
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Also Published As

Publication number Publication date
JP2014515557A (ja) 2014-06-30
TW201301564A (zh) 2013-01-01
US10170675B2 (en) 2019-01-01
BR112013029686A2 (pt) 2017-01-17
RU2597071C2 (ru) 2016-09-10
CN103548162B (zh) 2016-11-09
US20160126436A1 (en) 2016-05-05
KR20140030264A (ko) 2014-03-11
WO2012160455A1 (en) 2012-11-29
US9219209B2 (en) 2015-12-22
RU2013156628A (ru) 2015-06-27
US9722161B2 (en) 2017-08-01
EP2715813B1 (en) 2019-07-24
KR101932996B1 (ko) 2018-12-27
CN103548162A (zh) 2014-01-29
EP2715813A1 (en) 2014-04-09
US20170373235A1 (en) 2017-12-28
US20140061714A1 (en) 2014-03-06
TWI569469B (zh) 2017-02-01

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