JP5986503B2 - 固定用インサート、電極アセンブリおよびプラズマ処理チャンバー - Google Patents
固定用インサート、電極アセンブリおよびプラズマ処理チャンバー Download PDFInfo
- Publication number
- JP5986503B2 JP5986503B2 JP2012502094A JP2012502094A JP5986503B2 JP 5986503 B2 JP5986503 B2 JP 5986503B2 JP 2012502094 A JP2012502094 A JP 2012502094A JP 2012502094 A JP2012502094 A JP 2012502094A JP 5986503 B2 JP5986503 B2 JP 5986503B2
- Authority
- JP
- Japan
- Prior art keywords
- insert
- silicon
- back surface
- showerhead electrode
- torque receiving
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 71
- 229910052710 silicon Inorganic materials 0.000 claims description 71
- 239000010703 silicon Substances 0.000 claims description 71
- 239000007772 electrode material Substances 0.000 claims description 13
- 238000011109 contamination Methods 0.000 description 6
- 239000000463 material Substances 0.000 description 6
- 230000000295 complement effect Effects 0.000 description 5
- 239000000758 substrate Substances 0.000 description 3
- 241000755266 Kathetostoma giganteum Species 0.000 description 2
- 239000004696 Poly ether ether ketone Substances 0.000 description 2
- 239000000356 contaminant Substances 0.000 description 2
- 238000009434 installation Methods 0.000 description 2
- 238000002955 isolation Methods 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 229920002530 polyetherether ketone Polymers 0.000 description 2
- 229920001343 polytetrafluoroethylene Polymers 0.000 description 2
- 239000004810 polytetrafluoroethylene Substances 0.000 description 2
- DHKHKXVYLBGOIT-UHFFFAOYSA-N 1,1-Diethoxyethane Chemical compound CCOC(C)OCC DHKHKXVYLBGOIT-UHFFFAOYSA-N 0.000 description 1
- 229910000838 Al alloy Inorganic materials 0.000 description 1
- 229910052580 B4C Inorganic materials 0.000 description 1
- 229920004943 Delrin® Polymers 0.000 description 1
- 239000004677 Nylon Substances 0.000 description 1
- -1 Polytetrafluoroethylene Polymers 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 239000011354 acetal resin Substances 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- INAHAJYZKVIDIZ-UHFFFAOYSA-N boron carbide Chemical compound B12B3B4C32B41 INAHAJYZKVIDIZ-UHFFFAOYSA-N 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 229920001577 copolymer Polymers 0.000 description 1
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 230000001066 destructive effect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 229920006351 engineering plastic Polymers 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 229920001519 homopolymer Polymers 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 230000013011 mating Effects 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 229920001778 nylon Polymers 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 238000005240 physical vapour deposition Methods 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920006324 polyoxymethylene Polymers 0.000 description 1
- 230000001012 protector Effects 0.000 description 1
- 239000012858 resilient material Substances 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 241000894007 species Species 0.000 description 1
- 229920003051 synthetic elastomer Polymers 0.000 description 1
- 239000005061 synthetic rubber Substances 0.000 description 1
- 229920001169 thermoplastic Polymers 0.000 description 1
- 239000004416 thermosoftening plastic Substances 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32532—Electrodes
- H01J37/3255—Material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/02—Details
- H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement or ion-optical arrangement
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45563—Gas nozzles
- C23C16/45565—Shower nozzles
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32532—Electrodes
- H01J37/32605—Removable or replaceable electrodes or electrode systems
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32715—Workpiece holder
- H01J37/32724—Temperature
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/03—Mounting, supporting, spacing or insulating electrodes
- H01J2237/032—Mounting or supporting
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Analytical Chemistry (AREA)
- Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Chemical Vapour Deposition (AREA)
- Drying Of Semiconductors (AREA)
Description
本発明は、たとえば、以下のような態様で実現することもできる。
適用例1:
裏面と、正面と、複数のシャワーヘッド通路と、複数の裏面凹部と、複数の裏面インサートと、を備えるシリコンベース・シャワーヘッド電極であって、
前記複数のシャワーヘッド通路が、前記シリコンベース・シャワーヘッド電極の前記裏面から前記シリコンベース・シャワーヘッド電極の前記正面に伸長し、
前記複数の裏面凹部が、前記シリコンベース・シャワーヘッド電極の前記裏面に形成され、前記裏面凹部は、前記凹部と前記シリコンベース・シャワーヘッド電極の前記正面との間に所定の厚さのシリコンベース電極材を残すように形成され、
前記裏面インサートが、前記シリコンベース・シャワーヘッド電極の前記裏面に沿って前記裏面凹部内に配置され、
前記裏面インサートが、ネジ付き外径部と、ネジ付き内径部と、前記ネジ付き内径部内に形成されたツール係合部と、を備え、
前記裏面インサートの前記ツール係合部が、前記裏面インサートの回転軸の周りに配置される複数のトルク受容スロットを備え、
前記トルク受容スロットが、対向する対のトルク受容スロットを介した前記裏面インサートの軸上回転を避けるように、配置される、シリコンベース・シャワーヘッド電極。
適用例2:
適用例1に記載のシリコンベース・シャワーヘッド電極であって、
前記裏面インサートが、さらに、前記裏面インサートの前記ツール係合部に係合されたツールが前記裏面インサートの前記ネジ付き外径部を越えて伸長することを防止するために、前記ツール係合部と前記ネジ付き外径部との間に1つ以上の側面保護部を備えるように、前記ツール係合部が形成される、シリコンベース・シャワーヘッド電極。
適用例3:
適用例1に記載のシリコンベース・シャワーヘッド電極であって、
前記裏面インサートの前記ツール係合部が、対向する3対のトルク受容スロットを形成するように、前記裏面インサートの回転軸の周りに配置される3つのトルク受容スロットを備え、
前記トルク受容スロットが、前記対向する3対のトルク受容スロットの各対を介した前記裏面インサートの軸上回転を避けるように配置される、シリコンベース・シャワーヘッド電極。
適用例4:
適用例1に記載のシリコンベース・シャワーヘッド電極であって、
前記裏面インサートの前記ツール係合部が、対向するn(n−1)/2対のトルク受容スロットを形成するように、前記裏面インサートの回転軸の周りに配置されるn個のトルク受容スロットを備え、
前記トルク受容スロットが、前記対向するn(n−1)/2対のトルク受容スロットの各対を介した前記裏面インサートの軸上回転を避けるように配置される、シリコンベース・シャワーヘッド電極。
適用例5:
適用例4に記載のシリコンベース・シャワーヘッド電極であって、
前記トルク受容スロットが、前記回転軸の周りに等間隔に配置され、n=3またはn=5である、シリコンベース・シャワーヘッド電極。
適用例6:
適用例4に記載のシリコンベース・シャワーヘッド電極であって、
前記トルク受容スロットが、前記回転軸の周りに等間隔にまたは非等間隔に配置され、nは3以上5以下である、シリコンベース・シャワーヘッド電極。
適用例7:
適用例1に記載のシリコンベース・シャワーヘッド電極であって、
前記トルク受容スロットが、前記裏面インサートの前記回転軸に平行な方向に沿って次第に狭くならない断面形状を規定する、シリコンベース・シャワーヘッド電極。
適用例8:
適用例1に記載のシリコンベース・シャワーヘッド電極であって、
前記トルク受容スロットが、前記回転軸に平行に伸長する、尖端部を持たない側壁によって規定される、シリコンベース・シャワーヘッド電極。
Claims (6)
- 裏面と、正面と、複数のシャワーヘッド通路と、複数の裏面凹部と、複数の裏面インサートと、を備えるシリコンベース・シャワーヘッド電極であって、
前記複数のシャワーヘッド通路が、前記シリコンベース・シャワーヘッド電極の前記裏面から前記シリコンベース・シャワーヘッド電極の前記正面に伸長し、
前記複数の裏面凹部が、前記シリコンベース・シャワーヘッド電極の前記裏面に形成され、前記裏面凹部は、前記凹部と前記シリコンベース・シャワーヘッド電極の前記正面との間に所定の厚さのシリコンベース電極材を残すように形成され、
前記裏面インサートが、前記シリコンベース・シャワーヘッド電極の前記裏面に沿って前記裏面凹部内に配置され、
前記裏面インサートが、ネジ付き外径部と、ネジ付き内径部と、前記ネジ付き内径部内に形成されたツール係合部と、を備え、
前記裏面インサートの前記ツール係合部が、前記裏面インサートの回転軸の周りに配置される複数のトルク受容スロットを備え、
前記トルク受容スロットが、対向する対のトルク受容スロットを介した前記裏面インサートの軸上回転を避けるように、配置され、
前記裏面インサートの前記ツール係合部が、対向するn(n−1)/2対のトルク受容スロットを形成するように、前記裏面インサートの回転軸の周りに配置されるn個のトルク受容スロットを備え、
nは奇数であり、
前記トルク受容スロットが、前記対向するn(n−1)/2対のトルク受容スロットの各対を介した前記裏面インサートの軸上回転を避けるように、かつ、前記回転軸の周りに等間隔に配置される、シリコンベース・シャワーヘッド電極。 - 請求項1に記載のシリコンベース・シャワーヘッド電極であって、
前記裏面インサートが、さらに、前記裏面インサートの前記ツール係合部に係合されたツールが前記裏面インサートの前記ネジ付き外径部を越えて伸長することを防止するために、前記ツール係合部と前記ネジ付き外径部との間に1つ以上の側面保護部を備えるように、前記ツール係合部が形成される、シリコンベース・シャワーヘッド電極。 - 請求項1に記載のシリコンベース・シャワーヘッド電極であって、
前記裏面インサートの前記ツール係合部が、対向する3対のトルク受容スロットを形成するように、前記裏面インサートの回転軸の周りに配置される3つのトルク受容スロットを備え、
前記トルク受容スロットが、前記対向する3対のトルク受容スロットの各対を介した前記裏面インサートの軸上回転を避けるように配置される、シリコンベース・シャワーヘッド電極。 - 請求項1に記載のシリコンベース・シャワーヘッド電極であって、
n=3またはn=5である、シリコンベース・シャワーヘッド電極。 - 請求項1に記載のシリコンベース・シャワーヘッド電極であって、
前記トルク受容スロットが、前記裏面インサートの前記回転軸に平行な方向に沿って次第に狭くならない断面形状を規定する、シリコンベース・シャワーヘッド電極。 - 請求項1に記載のシリコンベース・シャワーヘッド電極であって、
前記トルク受容スロットが、前記回転軸に平行に伸長する、尖端部を持たない側壁によって規定される、シリコンベース・シャワーヘッド電極。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US12/409,984 | 2009-03-24 | ||
US12/409,984 US8187414B2 (en) | 2007-10-12 | 2009-03-24 | Anchoring inserts, electrode assemblies, and plasma processing chambers |
PCT/US2010/027273 WO2010111055A2 (en) | 2009-03-24 | 2010-03-15 | Anchoring inserts, electrode assemblies, and plasma processing chambers |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2012521638A JP2012521638A (ja) | 2012-09-13 |
JP5986503B2 true JP5986503B2 (ja) | 2016-09-06 |
Family
ID=42781764
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2012502094A Active JP5986503B2 (ja) | 2009-03-24 | 2010-03-15 | 固定用インサート、電極アセンブリおよびプラズマ処理チャンバー |
Country Status (7)
Country | Link |
---|---|
US (2) | US8187414B2 (ja) |
JP (1) | JP5986503B2 (ja) |
KR (1) | KR101651457B1 (ja) |
CN (1) | CN102356700B (ja) |
SG (1) | SG173904A1 (ja) |
TW (2) | TWI492672B (ja) |
WO (1) | WO2010111055A2 (ja) |
Families Citing this family (23)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7721488B1 (en) * | 2005-10-05 | 2010-05-25 | Bennett Scott A | Flashing apparatus for external use on structures |
US8206506B2 (en) * | 2008-07-07 | 2012-06-26 | Lam Research Corporation | Showerhead electrode |
US8161906B2 (en) * | 2008-07-07 | 2012-04-24 | Lam Research Corporation | Clamped showerhead electrode assembly |
US8221582B2 (en) * | 2008-07-07 | 2012-07-17 | Lam Research Corporation | Clamped monolithic showerhead electrode |
US8402918B2 (en) | 2009-04-07 | 2013-03-26 | Lam Research Corporation | Showerhead electrode with centering feature |
US8272346B2 (en) * | 2009-04-10 | 2012-09-25 | Lam Research Corporation | Gasket with positioning feature for clamped monolithic showerhead electrode |
US8419959B2 (en) * | 2009-09-18 | 2013-04-16 | Lam Research Corporation | Clamped monolithic showerhead electrode |
KR200464037Y1 (ko) * | 2009-10-13 | 2012-12-07 | 램 리써치 코포레이션 | 샤워헤드 전극 어셈블리의 에지-클램핑되고 기계적으로 패스닝된 내부 전극 |
US8573152B2 (en) | 2010-09-03 | 2013-11-05 | Lam Research Corporation | Showerhead electrode |
US8470127B2 (en) | 2011-01-06 | 2013-06-25 | Lam Research Corporation | Cam-locked showerhead electrode and assembly |
US9947512B2 (en) * | 2011-10-25 | 2018-04-17 | Lam Research Corporation | Window and mounting arrangement for twist-and-lock gas injector assembly of inductively coupled plasma chamber |
JP5865483B2 (ja) * | 2012-03-14 | 2016-02-17 | キヤノンアネルバ株式会社 | 締結部材および真空装置 |
US11391315B2 (en) * | 2012-10-25 | 2022-07-19 | Elijah Tooling, Inc. | Precision threaded locator fastener bushing |
US9991153B2 (en) * | 2013-03-14 | 2018-06-05 | Applied Materials, Inc. | Substrate support bushing |
US9911579B2 (en) * | 2014-07-03 | 2018-03-06 | Applied Materials, Inc. | Showerhead having a detachable high resistivity gas distribution plate |
WO2017062087A1 (en) * | 2015-10-08 | 2017-04-13 | Applied Materials, Inc. | Showerhead with reduced backside plasma ignition |
TWI610329B (zh) * | 2016-11-08 | 2018-01-01 | 財團法人工業技術研究院 | 電漿處理裝置 |
US10607817B2 (en) | 2016-11-18 | 2020-03-31 | Applied Materials, Inc. | Thermal repeatability and in-situ showerhead temperature monitoring |
CN109958681B (zh) * | 2017-12-22 | 2020-12-11 | 中微半导体设备(上海)股份有限公司 | 一种脆性材料零件安装装置及其应用 |
US10954983B2 (en) * | 2018-12-14 | 2021-03-23 | Raytheon Company | Weight-triggered locking feature |
KR102700366B1 (ko) * | 2019-01-29 | 2024-08-30 | 주성엔지니어링(주) | 샤워헤드 및 이를 포함하는 기판처리장치 |
US11208838B2 (en) * | 2019-05-22 | 2021-12-28 | Toyota Motor Engineering & Manufacturing North America, Inc. | Window clip release system |
KR102243897B1 (ko) * | 2019-06-26 | 2021-04-26 | 세메스 주식회사 | 샤워 헤드 유닛, 이를 포함하는 기판 처리 장치 및 샤워 헤드 유닛 조립 방법 |
Family Cites Families (132)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US2984279A (en) * | 1958-08-07 | 1961-05-16 | Rosan Eng Corp | Locking insert with deformable flange bearing peripheral biting teeth |
GB972814A (en) * | 1960-07-25 | 1964-10-14 | Rosan Eng Corp | Thin-walled inserts |
US3190169A (en) * | 1961-12-04 | 1965-06-22 | Rosan Eng Corp | Insert having internal drive grooves |
US3319690A (en) * | 1964-01-02 | 1967-05-16 | Rosan Eng Corp | Top driven locking insert |
US3259162A (en) * | 1964-02-06 | 1966-07-05 | Rosan Eng Corp | Insert with frictionally interlocked locking ring |
US3241408A (en) * | 1964-04-30 | 1966-03-22 | Lewis D Mccauley | Vehicle wheel nut or bolt |
JPS4814969B1 (ja) * | 1967-10-06 | 1973-05-11 | ||
US3841371A (en) * | 1968-07-30 | 1974-10-15 | Microdot Inc | Lock nut |
US3783173A (en) | 1972-05-19 | 1974-01-01 | Us Army | Gasket-electrically conductive |
US3939321A (en) | 1973-11-19 | 1976-02-17 | Lockheed Aircraft Corporation | Portable electrical discharge metalworking machine |
FR2514084B1 (fr) * | 1981-10-07 | 1985-09-13 | Telemecanique Electrique | Dispositif par vissage sur un profile et combinaison d'un profile avec un tel dispositif |
US4480513A (en) * | 1981-11-16 | 1984-11-06 | Mcgard, Inc. | Bolt-lock structure |
US4654754A (en) | 1982-11-02 | 1987-03-31 | Fairchild Weston Systems, Inc. | Thermal link |
JPS60231813A (ja) | 1984-05-01 | 1985-11-18 | Tanaka Kikinzoku Kogyo Kk | 紡糸口金 |
US4595484A (en) | 1985-12-02 | 1986-06-17 | International Business Machines Corporation | Reactive ion etching apparatus |
US4782893A (en) | 1986-09-15 | 1988-11-08 | Trique Concepts, Inc. | Electrically insulating thermally conductive pad for mounting electronic components |
US4960488A (en) | 1986-12-19 | 1990-10-02 | Applied Materials, Inc. | Reactor chamber self-cleaning process |
US4792378A (en) | 1987-12-15 | 1988-12-20 | Texas Instruments Incorporated | Gas dispersion disk for use in plasma enhanced chemical vapor deposition reactor |
US4820371A (en) | 1987-12-15 | 1989-04-11 | Texas Instruments Incorporated | Apertured ring for exhausting plasma reactor gases |
US5420388A (en) | 1989-03-29 | 1995-05-30 | Charmilles Technologies | Tool-holder and rapid rotary spindle |
US6063233A (en) | 1991-06-27 | 2000-05-16 | Applied Materials, Inc. | Thermal control apparatus for inductively coupled RF plasma reactor having an overhead solenoidal antenna |
US5232323A (en) * | 1992-09-28 | 1993-08-03 | General Electric Company | Removable threaded fastener with locking plate |
US5435678A (en) * | 1993-04-27 | 1995-07-25 | Monogram Aerospace Fasteners, Inc. | Insert assembly for connecting fasteners to lightweight materials |
WO1995002313A1 (en) | 1993-07-06 | 1995-01-19 | Kabushiki Kaisha Toshiba | Heat dissipating sheet |
CA2129073C (en) | 1993-09-10 | 2007-06-05 | John P. Kalinoski | Form-in-place emi gaskets |
DE4339786C5 (de) | 1993-11-18 | 2004-02-05 | Emi-Tec Elektronische Materialien Gmbh | Verfahren zur Herstellung einer Anordung zur Wärmeableitung |
US5545473A (en) | 1994-02-14 | 1996-08-13 | W. L. Gore & Associates, Inc. | Thermally conductive interface |
US5585013A (en) | 1995-04-07 | 1996-12-17 | Truty; Thomas J. | Electrode guide |
US5567093A (en) | 1995-04-11 | 1996-10-22 | Richmond; Daryl E. | Seal for coolant-fed tools |
US5679457A (en) | 1995-05-19 | 1997-10-21 | The Bergquist Company | Thermally conductive interface for electronic devices |
US5534751A (en) | 1995-07-10 | 1996-07-09 | Lam Research Corporation | Plasma etching apparatus utilizing plasma confinement |
US5932007A (en) | 1996-06-04 | 1999-08-03 | General Signal Technology Corporation | Method and apparatus for securely supporting a growing crystal in a czochralski crystal growth system |
JP3310171B2 (ja) * | 1996-07-17 | 2002-07-29 | 松下電器産業株式会社 | プラズマ処理装置 |
US5983906A (en) * | 1997-01-24 | 1999-11-16 | Applied Materials, Inc. | Methods and apparatus for a cleaning process in a high temperature, corrosive, plasma environment |
JP3480271B2 (ja) | 1997-10-07 | 2003-12-15 | 東京エレクトロン株式会社 | 熱処理装置のシャワーヘッド構造 |
US5977503A (en) | 1997-11-03 | 1999-11-02 | Leach Thomas S. | Attachment device for electrical discharge machine |
US6096414A (en) | 1997-11-25 | 2000-08-01 | Parker-Hannifin Corporation | High dielectric strength thermal interface material |
US5860779A (en) * | 1997-11-26 | 1999-01-19 | Mcdonnell Douglas Corporation | Locking nut |
US6131646A (en) | 1998-01-19 | 2000-10-17 | Trw Inc. | Heat conductive interface material |
US6220607B1 (en) | 1998-04-17 | 2001-04-24 | Applied Materials, Inc. | Thermally conductive conformal media |
US6073577A (en) | 1998-06-30 | 2000-06-13 | Lam Research Corporation | Electrode for plasma processes and method for manufacture and use thereof |
US6050216A (en) | 1998-08-21 | 2000-04-18 | M.E.C. Technology, Inc. | Showerhead electrode for plasma processing |
US6379491B1 (en) | 1998-10-30 | 2002-04-30 | Promos Technologies, Inc. | Plasma chamber with erosion resistive securement screws |
US6165612A (en) | 1999-05-14 | 2000-12-26 | The Bergquist Company | Thermally conductive interface layers |
US6123775A (en) | 1999-06-30 | 2000-09-26 | Lam Research Corporation | Reaction chamber component having improved temperature uniformity |
US6200415B1 (en) | 1999-06-30 | 2001-03-13 | Lam Research Corporation | Load controlled rapid assembly clamp ring |
US6245192B1 (en) | 1999-06-30 | 2001-06-12 | Lam Research Corporation | Gas distribution apparatus for semiconductor processing |
US6451157B1 (en) | 1999-09-23 | 2002-09-17 | Lam Research Corporation | Gas distribution apparatus for semiconductor processing |
US6295900B1 (en) * | 1999-10-06 | 2001-10-02 | Mcgard, Inc. | Fastener constructions |
US6496373B1 (en) | 1999-11-04 | 2002-12-17 | Amerasia International Technology, Inc. | Compressible thermally-conductive interface |
US6403910B1 (en) | 1999-12-14 | 2002-06-11 | Hi-Tek Manufacturing, Inc. | EDM apparatus and method for performing EDM operation |
US6343647B2 (en) | 2000-01-11 | 2002-02-05 | Thermax International, Ll.C. | Thermal joint and method of use |
US6477980B1 (en) | 2000-01-20 | 2002-11-12 | Applied Materials, Inc. | Flexibly suspended gas distribution manifold for plasma chamber |
US6170432B1 (en) | 2000-01-24 | 2001-01-09 | M.E.C. Technology, Inc. | Showerhead electrode assembly for plasma processing |
US6475933B1 (en) | 2000-01-27 | 2002-11-05 | Northrop Grumman Corporation | Highly conductive elastomeric sheet |
JP3990867B2 (ja) | 2000-01-31 | 2007-10-17 | キヤノン株式会社 | 堆積膜形成装置および堆積膜形成方法 |
EP1264126B1 (en) | 2000-03-06 | 2007-12-05 | Interface Solutions, Inc. | Gaskets with controlled flange surface adhesion properties |
US7220937B2 (en) | 2000-03-17 | 2007-05-22 | Applied Materials, Inc. | Plasma reactor with overhead RF source power electrode with low loss, low arcing tendency and low contamination |
JP2001287135A (ja) | 2000-04-04 | 2001-10-16 | Horkos Corp | 工作機械用工具ホルダ並びにこの工具ホルダに用いる刃具及び、この工具ホルダに用いるツールドライバ |
JP2002093777A (ja) | 2000-07-11 | 2002-03-29 | Nisshinbo Ind Inc | ドライエッチング装置 |
US6412437B1 (en) | 2000-08-18 | 2002-07-02 | Micron Technology, Inc. | Plasma enhanced chemical vapor deposition reactor and plasma enhanced chemical vapor deposition process |
JP3353149B2 (ja) | 2000-08-28 | 2002-12-03 | ホーコス株式会社 | 工作機械の主軸装置 |
AU2001291278A1 (en) * | 2000-08-30 | 2002-03-13 | Nobel Biocare Ab | Impression cap |
US6872281B1 (en) | 2000-09-28 | 2005-03-29 | Lam Research Corporation | Chamber configuration for confining a plasma |
US6391787B1 (en) | 2000-10-13 | 2002-05-21 | Lam Research Corporation | Stepped upper electrode for plasma processing uniformity |
US6537429B2 (en) * | 2000-12-29 | 2003-03-25 | Lam Research Corporation | Diamond coatings on reactor wall and method of manufacturing thereof |
US6651736B2 (en) | 2001-06-28 | 2003-11-25 | Intel Corporation | Short carbon fiber enhanced thermal grease |
US20030106644A1 (en) | 2001-07-19 | 2003-06-12 | Sirkis Murray D. | Electrode apparatus and method for plasma processing |
US6984288B2 (en) | 2001-08-08 | 2006-01-10 | Lam Research Corporation | Plasma processor in plasma confinement region within a vacuum chamber |
US6786175B2 (en) | 2001-08-08 | 2004-09-07 | Lam Research Corporation | Showerhead electrode design for semiconductor processing reactor |
US20050127329A1 (en) | 2001-08-17 | 2005-06-16 | Chyi-Shan Wang | Method of forming nanocomposite materials |
US6685412B2 (en) * | 2001-10-19 | 2004-02-03 | Cross Medical Products, Inc. | Multi-lobe torque driving recess and tool in particular for an orthopedic implant screw |
JP4102873B2 (ja) | 2002-03-29 | 2008-06-18 | 東京エレクトロン株式会社 | プラズマ処理装置用電極板及びプラズマ処理装置 |
JP3868341B2 (ja) | 2002-04-22 | 2007-01-17 | 日清紡績株式会社 | 耐熱性に優れたプラズマエッチング電極及びそれを装着したドライエッチング装置 |
US7208192B2 (en) | 2002-05-31 | 2007-04-24 | Parker-Hannifin Corporation | Thermally or electrically-conductive form-in-place gap filter |
JP3714924B2 (ja) | 2002-07-11 | 2005-11-09 | 東京エレクトロン株式会社 | プラズマ処理装置 |
US7270713B2 (en) * | 2003-01-07 | 2007-09-18 | Applied Materials, Inc. | Tunable gas distribution plate assembly |
CA2514496C (en) | 2003-01-23 | 2014-07-29 | William Marsh Rice University | Smart materials: strain sensing and stress determination by means of nanotube sensing systems, composites, and devices |
US7153388B2 (en) | 2003-03-31 | 2006-12-26 | Lam Research Corporation | Chamber for high-pressure wafer processing and method for making the same |
US7296534B2 (en) * | 2003-04-30 | 2007-11-20 | Tokyo Electron Limited | Hybrid ball-lock attachment apparatus |
US7205050B2 (en) | 2003-06-09 | 2007-04-17 | Permatex, Inc. | Low shear adhesion RTV silicone |
JP2005019606A (ja) | 2003-06-25 | 2005-01-20 | Anelva Corp | プラズマ処理装置におけるガスシャワーヘッドまたはターゲットプレートを電極に固定する装置 |
US7137444B2 (en) | 2003-09-08 | 2006-11-21 | Pacific Rubber & Packing, Inc. | Heat-transfer interface device between a source of heat and a heat-receiving object |
US7645341B2 (en) | 2003-12-23 | 2010-01-12 | Lam Research Corporation | Showerhead electrode assembly for plasma processing apparatuses |
IL160145A0 (en) | 2004-01-29 | 2004-06-20 | Univ Ben Gurion | Method for the preparation of dispersions of carbon nanotubes |
US6983892B2 (en) | 2004-02-05 | 2006-01-10 | Applied Materials, Inc. | Gas distribution showerhead for semiconductor processing |
CN1669796B (zh) | 2004-02-23 | 2012-05-23 | 周星工程股份有限公司 | 用于制造显示基板的装置及装配在其中的喷头组合 |
US20050220568A1 (en) * | 2004-03-31 | 2005-10-06 | Tokyo Electron Limited | Method and system for fastening components used in plasma processing |
US20070066038A1 (en) | 2004-04-30 | 2007-03-22 | Lam Research Corporation | Fast gas switching plasma processing apparatus |
US7708859B2 (en) | 2004-04-30 | 2010-05-04 | Lam Research Corporation | Gas distribution system having fast gas switching capabilities |
US7712434B2 (en) | 2004-04-30 | 2010-05-11 | Lam Research Corporation | Apparatus including showerhead electrode and heater for plasma processing |
US8317968B2 (en) | 2004-04-30 | 2012-11-27 | Lam Research Corporation | Apparatus including gas distribution member supplying process gas and radio frequency (RF) power for plasma processing |
TWI287279B (en) * | 2004-09-20 | 2007-09-21 | Applied Materials Inc | Diffuser gravity support |
US7429410B2 (en) | 2004-09-20 | 2008-09-30 | Applied Materials, Inc. | Diffuser gravity support |
US7226869B2 (en) * | 2004-10-29 | 2007-06-05 | Lam Research Corporation | Methods for protecting silicon or silicon carbide electrode surfaces from morphological modification during plasma etch processing |
KR100628888B1 (ko) | 2004-12-27 | 2006-09-26 | 삼성전자주식회사 | 샤워 헤드 온도 조절 장치 및 이를 갖는 막 형성 장치 |
US7430986B2 (en) | 2005-03-18 | 2008-10-07 | Lam Research Corporation | Plasma confinement ring assemblies having reduced polymer deposition characteristics |
US7348366B2 (en) | 2005-04-07 | 2008-03-25 | Freudenberg-Nok General Partnership | High temperature elastomers with low hydrocarbon vapor permeability |
KR100745971B1 (ko) | 2005-04-08 | 2007-08-02 | 정경철 | 7개 규격의 시력교정용 핀홀렌즈 세트 |
JP4506557B2 (ja) | 2005-05-18 | 2010-07-21 | 株式会社島津製作所 | シャワーヘッドおよび表面波励起プラズマ処理装置 |
KR100629358B1 (ko) | 2005-05-24 | 2006-10-02 | 삼성전자주식회사 | 샤워 헤드 |
US20060288934A1 (en) | 2005-06-22 | 2006-12-28 | Tokyo Electron Limited | Electrode assembly and plasma processing apparatus |
JP4819411B2 (ja) * | 2005-06-22 | 2011-11-24 | 東京エレクトロン株式会社 | プラズマ処理装置 |
US8770902B1 (en) * | 2005-07-12 | 2014-07-08 | Elijah Tooling, Inc. | Precision locating fastening system |
JP2007043147A (ja) | 2005-07-29 | 2007-02-15 | Samsung Electronics Co Ltd | 原子層蒸着工程を用いたシリコンリッチナノクリスタル構造物の形成方法及びこれを用いた不揮発性半導体装置の製造方法 |
TWI312434B (en) | 2005-08-19 | 2009-07-21 | Au Optronics Corporatio | A fan-out structure for a flat panel display |
JP2007067150A (ja) * | 2005-08-31 | 2007-03-15 | Shin Etsu Chem Co Ltd | プラズマ処理装置用のシャワープレート及びプラズマ処理装置 |
US8679252B2 (en) | 2005-09-23 | 2014-03-25 | Lam Research Corporation | Actively heated aluminum baffle component having improved particle performance and methods of use and manufacture thereof |
JP4777790B2 (ja) | 2005-09-29 | 2011-09-21 | 東京エレクトロン株式会社 | プラズマ処理室用構造物、プラズマ処理室、及びプラズマ処理装置 |
US8789493B2 (en) | 2006-02-13 | 2014-07-29 | Lam Research Corporation | Sealed elastomer bonded Si electrodes and the like for reduced particle contamination in dielectric etch |
US20080081114A1 (en) | 2006-10-03 | 2008-04-03 | Novellus Systems, Inc. | Apparatus and method for delivering uniform fluid flow in a chemical deposition system |
US7854820B2 (en) | 2006-10-16 | 2010-12-21 | Lam Research Corporation | Upper electrode backing member with particle reducing features |
JP2008103589A (ja) | 2006-10-20 | 2008-05-01 | Tokyo Cathode Laboratory Co Ltd | 半導体処理装置用シャワーヘッド及び半導体処理装置のシャワーヘッドに用いられる表側電極板 |
US7806413B2 (en) | 2006-11-08 | 2010-10-05 | Federal-Mogul Corporation | Static gasket |
US8702866B2 (en) | 2006-12-18 | 2014-04-22 | Lam Research Corporation | Showerhead electrode assembly with gas flow modification for extended electrode life |
US7732728B2 (en) | 2007-01-17 | 2010-06-08 | Lam Research Corporation | Apparatuses for adjusting electrode gap in capacitively-coupled RF plasma reactor |
US7767028B2 (en) * | 2007-03-14 | 2010-08-03 | Lam Research Corporation | Cleaning hardware kit for composite showerhead electrode assemblies for plasma processing apparatuses |
US8069817B2 (en) | 2007-03-30 | 2011-12-06 | Lam Research Corporation | Showerhead electrodes and showerhead electrode assemblies having low-particle performance for semiconductor material processing apparatuses |
US8216418B2 (en) * | 2007-06-13 | 2012-07-10 | Lam Research Corporation | Electrode assembly and plasma processing chamber utilizing thermally conductive gasket and o-rings |
WO2009042137A2 (en) | 2007-09-25 | 2009-04-02 | Lam Research Corporation | Temperature control modules for showerhead electrode assemblies for plasma processing apparatuses |
US8152954B2 (en) | 2007-10-12 | 2012-04-10 | Lam Research Corporation | Showerhead electrode assemblies and plasma processing chambers incorporating the same |
WO2009058376A2 (en) | 2007-10-31 | 2009-05-07 | Lam Research Corporation | Temperature control module using gas pressure to control thermal conductance between liquid coolant and component body |
TWI455239B (zh) | 2008-03-14 | 2014-10-01 | Lam Res Corp | 凸輪鎖電極夾 |
US8187413B2 (en) | 2008-03-18 | 2012-05-29 | Lam Research Corporation | Electrode assembly and plasma processing chamber utilizing thermally conductive gasket |
US8679288B2 (en) | 2008-06-09 | 2014-03-25 | Lam Research Corporation | Showerhead electrode assemblies for plasma processing apparatuses |
US20100000684A1 (en) | 2008-07-03 | 2010-01-07 | Jong Yong Choi | Dry etching apparatus |
US8161906B2 (en) | 2008-07-07 | 2012-04-24 | Lam Research Corporation | Clamped showerhead electrode assembly |
US8221582B2 (en) | 2008-07-07 | 2012-07-17 | Lam Research Corporation | Clamped monolithic showerhead electrode |
US8206506B2 (en) | 2008-07-07 | 2012-06-26 | Lam Research Corporation | Showerhead electrode |
US8449679B2 (en) | 2008-08-15 | 2013-05-28 | Lam Research Corporation | Temperature controlled hot edge ring assembly |
US8147648B2 (en) | 2008-08-15 | 2012-04-03 | Lam Research Corporation | Composite showerhead electrode assembly for a plasma processing apparatus |
US8272346B2 (en) | 2009-04-10 | 2012-09-25 | Lam Research Corporation | Gasket with positioning feature for clamped monolithic showerhead electrode |
-
2009
- 2009-03-24 US US12/409,984 patent/US8187414B2/en active Active
-
2010
- 2010-03-15 SG SG2011062759A patent/SG173904A1/en unknown
- 2010-03-15 KR KR1020117022441A patent/KR101651457B1/ko active IP Right Grant
- 2010-03-15 CN CN201080012058.8A patent/CN102356700B/zh active Active
- 2010-03-15 JP JP2012502094A patent/JP5986503B2/ja active Active
- 2010-03-15 WO PCT/US2010/027273 patent/WO2010111055A2/en active Application Filing
- 2010-03-24 TW TW099108695A patent/TWI492672B/zh active
- 2010-03-24 TW TW104118526A patent/TWI659673B/zh active
-
2012
- 2012-04-10 US US13/443,307 patent/US9023177B2/en active Active
Also Published As
Publication number | Publication date |
---|---|
SG173904A1 (en) | 2011-09-29 |
JP2012521638A (ja) | 2012-09-13 |
CN102356700A (zh) | 2012-02-15 |
TW201127217A (en) | 2011-08-01 |
WO2010111055A2 (en) | 2010-09-30 |
US9023177B2 (en) | 2015-05-05 |
TWI492672B (zh) | 2015-07-11 |
KR20110134424A (ko) | 2011-12-14 |
CN102356700B (zh) | 2014-06-25 |
TW201538037A (zh) | 2015-10-01 |
TWI659673B (zh) | 2019-05-11 |
US20100038033A1 (en) | 2010-02-18 |
US20120193449A1 (en) | 2012-08-02 |
KR101651457B1 (ko) | 2016-08-26 |
US8187414B2 (en) | 2012-05-29 |
WO2010111055A3 (en) | 2011-01-13 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP5986503B2 (ja) | 固定用インサート、電極アセンブリおよびプラズマ処理チャンバー | |
JP5450427B2 (ja) | シャワーヘッド電極アセンブリ及びそれを組み入れたプラズマ処理チャンバ | |
US8272346B2 (en) | Gasket with positioning feature for clamped monolithic showerhead electrode | |
US8796153B2 (en) | Clamped monolithic showerhead electrode | |
KR101168847B1 (ko) | 클램핑된 샤워헤드 전극 어셈블리 | |
JP5650547B2 (ja) | カムロック電極クランプ | |
US20090236040A1 (en) | Electrode assembly and plasma processing chamber utilizing thermally conductive gasket | |
WO2008156958A2 (en) | Electrode assembly and plasma processing chamber utilizing thermally conductive gasket and o-rings |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20130311 |
|
A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20140307 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20140311 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20140611 |
|
A02 | Decision of refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A02 Effective date: 20141202 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20160805 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 5986503 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |