CN102356700A - 固定嵌入部、电极组件和等离子处理室 - Google Patents
固定嵌入部、电极组件和等离子处理室 Download PDFInfo
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Abstract
提供一种硅基喷头电极,其中后部嵌入部设置在沿着电极的后部形成的后部凹陷内。后部嵌入部包括螺纹外径、螺纹内径和形成于螺纹内径内的工具啮合部。工具啮合部形成以使该后部嵌入部进一步包括一个或多个位于工具啮合部和螺纹外径之间的侧面防护部以防止与后部嵌入部的工具啮合部啮合的工具延伸超出该嵌入部的螺纹外径。进一步地,后部嵌入部的工具啮合部包括多个沿着后部嵌入部的转轴线布置的转矩接收槽。该转矩接收槽通过相对成对的转矩接收槽避免同轴转动的方式布置。
Description
技术领域
本公开一般地涉及等离子体工艺,更确切地,涉及等离子体处理室和在此使用的电极组件。
背景技术
等离子体工艺机构可被用于处理衬底,该处理可使用多种技术,包括但不限于,蚀刻、物理气相沉积、化学气相沉积、离子注入、光刻胶移除等。例如,并不意在限定,等离子体处理室的一种包含上电极,通常指喷头电极,和下电极。电场被建立在电极之间以激发工艺气体成为等离子体状态,从而在反应室内处理衬底。
发明内容
根据本公开的一个实施例,提供了硅基喷头电极,其中后部嵌入部(insert)设置在沿着电极的后部形成的后部凹陷内。后部嵌入部包括螺纹外径、螺纹内径和形成于螺纹内径内的工具啮合部。形成的该工具啮合部使得为后部嵌入部进一步包括一个或多个位于工具啮合部和螺纹外径之间的侧面防护部以防止与后部嵌入部的工具啮合部相啮合的工具延伸超出该嵌入部的螺纹外径。
在另一个实施例中,后部嵌入部的工具啮合部包括多个绕后部嵌入部的转轴线布置的转矩接收槽。该转矩接收槽以通过相对成对的转矩接收槽方式布置避免后部嵌入部的同轴转动。其它的实施例涉及包括在此公开的方式制造的硅基喷头电极的等离子体处理室。
附图说明
当结合下列附图时,本公开的具体实施方式的下面的详细描述可以很好地理解,附图中相似的结构使用相同的数字表示,其中:
图1是本公开的特殊实施例的等离子处理室的示意图;
图2是根据本公开的实施例的喷头电极的后部的俯视图;
图3是根据本公开的实施例的喷头电极的一部分的剖视图;
图4是根据本公开的实施例的喷头电极的后部和厚度尺寸的等比示意图;
图5是根据本公开的实施例的包括固定部件的电极组件的剖视图;
图6、7、8A和9是根据本公开的一些替代实施例的包括固定部件的电极组件一部分的剖视图;
图8B和8C是使图8A所示的主题的结构和操作清楚的示意图;
图10和11是根据本公开的进一步的替代实施例的电极组件的固定部件和补充机器部分的示意图;
图12和13是本公开的补充示例的后部嵌入部的等比示意图;
图14和图15是根据本公开在后部嵌入部内布置转矩接收槽的两个可选择方式的示意图;和
图16是啮合和旋转图12和13示出的后部嵌入部的工具的示意图。
具体实施方式
本公开的不同方面可以在等离子体处理室10的环境中示出,其仅仅在图1中示出以避免将本公开的内容限制在特定的等离子体处理结构或部件,该限制使得本公开的主题可能不完整。一般地如图1所示,等离子体处理室10包括真空源20、工艺气体供应30、等离子体功率供应40、包括下电极组件55的衬底支架50和上电极组件100。
参见图2-5,根据本公开的一个实施例示出了上电极组件100。一般地,电极组件100包括固定部件60、对齐销66、热控制板70、硅基喷头电极80和设置于热控制板70的前部74和硅基喷头电极80的后部82之间的热导电衬垫75。更具体地,热控制板70包括后部72、前部74和一个或多个配置为引导工艺气体到热控制板70的前部74的工艺气体通道76。尽管该公开并不限于特定热控制板材料或工艺气体通道配置,应该注意到合适的热控制板材料包括铝、铝合金或类似的热导体。另外,应该注意到,多种教导可依赖于热控制板的设计,包括但不限于U.S.Pub.No.2005/0133160中的热控制板的设计。
硅基喷头电极80包括后部82、前部84和多个从硅基喷头电极80的后部82延伸到硅基喷头电极80的前部84的喷头通道86。该硅基喷头电极80进一步包括多个形成于电极80的后部的后部凹陷88。如图5所示,后部凹陷88在凹陷88和电极80的前部84之间留有厚度为x的硅基电极材料。沿着电极80的后部82的后部凹陷内设置后部嵌入部90。凹陷88和喷头电极80的前部84之间的硅基电极材料通过将后部嵌入部90和固定部件60与等离子体室内的活性组分隔离的方式,帮助最小化等离子体处理室10内的污染物潜在源。为了帮助确保前述隔离在电极80有寿命时保持,厚度x优选近似于0.25cm或,换一种方式表达,至少近似于硅基喷头电极80的总厚度的25%。
参见图1,该隔离可以通过配置热控制板70和硅基喷头电极80来限定一个密封的等离子体隔断65来加强,这样等离子体处理室10的疏散部15内的气体和活性组分不能到达固定部件60和该嵌入部。这种特定方式中定义了等离子体隔断65,且根据热控制板70和喷头电极80各自的配置会有所不同。在大多数实施例中可预期,形成热控制板70和喷头电极80的各自材料会限定大部分隔断。另外,可预期用各种密封件加强该隔断,尤其在热控制板70和喷头电极80与彼此接口和与等离子体处理室10的其它组件接口的地方。
参见图5,等离子体室10内活性组分同后部嵌入部90和固定部件60的前述隔离可以通过在后部凹陷88内设置后部嵌入部90来进一步加强,这样它们被插进硅基喷头电极80的后部82或至少相对于硅基喷头电极80的后部82相平齐。同样地,固定部件60可设置于热控制板70内的固定部件通道78内,这样,它被插进热控制板70的后部72或至少相对于热控制板70的后部72相平齐。
除了工艺气体通道76之外,热控制板70包括固定部件通道78,该固定部件通道78被配置为允许固定部件60能够进入后部凹陷88内设置的后部嵌入部90内,后部凹陷88沿着硅基喷头电极80的后部82设置。热控制板70和硅基喷头电极80可使用固定部件60和后部嵌入部90来相啮合。在啮合状态,热控制板70的前部74正对硅基喷头电极80的后部82且硅基喷头电极80内的喷头通道86与热控制板70内的工艺气体通道76对齐。另外,固定部件通道78与位于后部凹陷88内的后部嵌入部90相对齐,后部凹陷88沿着电极80的后部82设置。结果,固定部件60可以延伸穿过热控制板70内的固定部件通道78,且与后部嵌入部90相啮合,后部嵌入部90设置于沿着电极80的后部82的后部设置的凹陷88内。
固定部件60和后部嵌入部90被配置为维持热控制板70和硅基喷头电极80的啮合。另外,固定部件60和后部嵌入部90被配置为允许热控制板80和喷头电极80脱离。在图5所示的实施例中,和在此描述的其它实施例中,硅基喷头电极80的硅基电极材料通过后部嵌入部90的相对有弹性的材料在结合和脱离过程中与固定部件60的摩擦接触隔离。该隔离,由后部嵌入部90提供,有助于消除由作为等离子体室10内的污染物源的固定部件60造成的硅基电极材料的磨损。后部嵌入部90的弹性也允许热控制板70和硅基喷头电极80的重复的、非破坏性的啮合和脱离。
尽管可以选择多种材料形成后部嵌入部90,包括热塑性塑料或其它塑料、合成橡胶、陶瓷、金属或带有材料复合层的嵌入,根据本公开的一些实施例,后部嵌入部包括形成和制造的大量聚醚醚酮(PEEK),这样后部嵌入部90的硬度未超过硅基电极材料的硬度。其它候选材料包括但不限于,(迭尔林)或在填入或没有填入的均聚物或共聚物、尼龙、聚四氟乙烯(PTFE)或其组合物时形成的其它聚甲醛树脂工程塑料。
在图5和7-11所示的实施例中,尽管热控制板70和硅基喷头电极80可以用与本公开构思一致的多种方式配合,后部嵌入部90可配置为硅基喷头电极80的后部82中形成的后部凹陷88中的铆件。更具体地,在图5的实施例中,后部嵌入部90通过在硅基电极材料内提供螺纹部分铆在后部凹陷内。当该嵌入部90就位后,固定部件60,例如包括螺钉或螺栓,与后部嵌入部90相啮合来将喷头电极80固定到热控制板70上。图7的实施例中,后部嵌入部通过粘结剂铆到后部凹陷内。在图8A-8C所示的实施例中,后部凹陷88被机械加工成包括底槽部89且后部嵌入部90通过将该嵌入部90插入凹陷88内,并将其旋转进入后部凹陷88的底槽部89内而铆接在后部凹陷88内。
参见图9,应该注意到后部嵌入部90可被配置为按扣,按扣包括被配置为延伸入在热控制板70内的固定部件通道78的一个的后部延伸92。在这种情况下,固定部件60被配置为通过例如螺纹啮合进入固定部件通道78内的后部嵌入部90的后部延伸92。
在此公开的采用一个或多个后部嵌入部90的任何实施例中,确保固定部件60、后部嵌入部90和后部凹陷88被配置为,在热载荷过程中,且固定部件60和后部嵌入部90处于啮合状态,后部嵌入部能够在后部凹陷内与固定部件一起移动,而没有从凹陷中移出通常是有利的。例如,参见图10-11所示的本公开的实施例,其中参考图8A-8C所示的底槽部实施例的细节被示出,提供带有耳片95的后部嵌入部90,耳片95被配置为填补形成于喷头电极80的电极材料内的底槽部89。如槽85定义的那样,通过使耳片95与电极80内的相应的槽85对齐,将嵌入部90嵌入进凹陷88内,且旋转嵌入部90,从而将嵌入部90固定在凹陷88内。
在图10和11的实施例中,通过在嵌入部90的埋入端96的小径部94周围提供弹簧,嵌入部90可以弹簧加载(spring-loaded)状态固定在凹陷88内,且选择的嵌入部90的外径尺寸和耳片95的尺寸和形状允许在弹簧加载状态下嵌入部90能在后部凹陷88内移动。结果,在热载荷代表性地出现在等离子体工艺的过程中,后部嵌入部90可在后部凹陷88内与固定部件60一起移动而没有从凹陷88移出并且没有降低固定部件60和嵌入部90的啮合程度。
本发明人认识到任何与邻近凹陷88的电极材料的摩擦接触都能在等离子处理室10内产生潜在污染物源。相应地,在后部嵌入部90根据本公开被配置为用螺丝刀或其它潜在的磨擦工具安装或移除的地方,如图10-11所示的实施例,可以预期,在与移除工具匹配的槽或其他啮合部的边缘处可以给后部嵌入部90的槽驱动头提供侧面防护部98。更一般地说,后部嵌入部90可以包括一个或多个侧面防护部98,防护部98配置为允许工具在其工具啮合部与后部嵌入部啮合,而延伸不超过该嵌入部的外围,在此其可以接触电极材料内的凹陷的内径。
可以使用多种弹簧加载配置来减少固定部件60在等离子体工艺过程中因热负荷引起的压力而脱离的趋势。例如,一种提供热控制板70和硅基喷头电极80的弹簧加载啮合的结构如图5-7所示。在图5和7中,后部嵌入部90被配置为喷头电极80的后部82内形成的后部凹陷88中的一个内的铆件,且固定部件60包括弹簧加载垫片62形式的弹簧元件,当固定部件60进入后部嵌入部90时提供与啮合力相反的力。在图6中,后部嵌入部被省略,取而代之的是电极材料内带有螺纹孔的直螺纹啮合。可替代地,如图9所示,可提供在固定部件通道78内的沿固定部件60的纵向延伸方向布置的螺旋弹簧64的弹簧元件。
根据本公开的另外的实施例的后部嵌入部110如图12-14所示。如上述公开的实施例,图12-14所示的后部嵌入部110可被设在沿着硅基喷头电极的后部的后部凹陷内。在图12-14的实施例中,后部嵌入部110包括螺纹外径112、螺纹内径114和在螺纹内径114内形成的工具啮合部116。如图10和11所示的后部嵌入部110的实施例,后部嵌入部110包括一个或多个工具啮合部116和嵌入部110的螺纹外径112之间的侧面防护部115。侧面防护部115帮助确保与后部嵌入部110的工具啮合部116啮合的工具不会不经意地延伸超出后部嵌入部110的螺纹外径112。如上所提示的,这帮助确保该工具不会与硅基喷头电极接触,从而防止脱离电极上的材料成为污染物。
如图12-14所示,后部嵌入部110的工具啮合部116包括沿多个后部嵌入部110的转轴线130布置的转矩接收槽120。为了帮助确保使用者不试图用常规工具移出嵌入部,像用平头和十字头(Phillips)螺丝刀,该转矩接收槽120以这样的方式设置:当试图用例如平头螺丝刀啮合相对成对设置的转矩接收槽120时将导致嵌入部110脱离轴线而转动不灵。更具体地,如图14所示的沿着两两相对成对设置的转矩接收槽120之间延伸的虚线,任何相对成对的转矩接收槽的之间的这种啮合会完全脱离轴线。相比之下,如图16所示形式的互补型的安装/移除工具200,会产生更多优选的绕转轴线130的同轴旋转。
尽管图12-14和16清楚涉及的实施例中,后部嵌入部110的工具啮合部116包括三个转矩接收槽120,该三个转矩接收槽120沿着转轴线130排列为三对相对成对的转矩接收槽120,可预期后部嵌入部110的工具啮合部116可包括n个转矩接收槽,该n个转矩接收槽沿着后部嵌入部的转轴线排列为n(n-l)/2对相对成对设置的转矩接收槽。如图14和15所示,转矩接收槽120绕转轴线等距离间隔,且n=3(参见图14)或n=5(参见图15)。在替代的实施例中,可预期转矩接收槽可绕转轴线等距离间隔或非等距离间隔,且在大多数实施例中,优选确保提供3个、4个或5个槽120(3≤n≤5),因为一些多槽结构可能降低被回避(avoid)的同轴旋转的度数。
如图12和13所示,转矩接收槽120统一向下进入嵌入部110的结构内,而没有减少剖面尺寸,如此,可以描述为定义渐进的非收缩的剖面轮廓。相比之下,许多传统的五金螺丝头,像十字形螺丝头(Phillips type screw head),定义随深度而收缩的剖面轮廓以帮助确保螺丝钉和螺丝刀的啮合固定。然而,本发明人认识到,这种收缩在本公开的环境中是不利的,因为它会导致在安装/移出工具和嵌入部之间的过度摩擦接触,且成为微粒污染物源。
为了进一步防止污染物在移出工具和后部嵌入部110之间的接触中产生,可预期转矩接收槽120可被设计为平行于转轴线130延伸的侧壁118为无顶端侧壁。更具体地,当两个线性壁部分连接时,侧壁118没有通常会形成的那种突然的几何不连续。这些几何不连续和在匹配安装/移出工具中的互补的相对部件,可能成为重大污染物源,因为他们典型形成在机械配合环境中接触时破坏或从配合表面移出污染物的相对易碎的或潜在破坏性顶端。如图12和13所示,尽管可能有槽120的部分,在此弧形侧壁部与线性侧壁部相连,该槽的设计应该没有线性对线性的形成顶端连接。结果,安装/移出工具200,如图16所示的例子,也可以被设计为没有典型的线性对线性侧壁连接的易碎的或潜在的破坏性顶端。
尽管本发明的各种概念已在此在硅基电极材料的上下文中描述,这些硅基电极材料如单晶硅、多晶硅、氮化硅和碳化硅,应该注意到本发明在多种环境中具有实用性,包括那些硅基材料包括碳化硼、氮化铝、氧化铝或其组合物的地方。另外,可预期硅基喷头电极80可以出现在多种结构中而没有脱离本公开的范围,包括但不限于,包含有圆形中心电极和绕该中心电极周围布置的一个或多个边缘电极的单件、圆形喷头结构或多部件、圆形喷头结构,。
应注意,关于本发明中的部件的描述是与拟定用途描述相对的结构性描述,该结构性描述即,所述部件被“设置成”以一种特殊的方式使其特性或功能具体化。具体而言,所述部件被“设置”的方式,意指所述部件目前的物理状态,并视为对所述部件结构性特征的清晰描述。
请注意“优选地”、“通常”和“典型地”之类术语,当本发明使用这些术语时,并不是用于限制本发明请求保护的范围,或者意指某些特征对于本发明的结构或功能是关键的、基本的甚或是重要的。确切地说,这些术语仅仅是用于辨别本发明的具体实施方式的特定方面,或者强调可以或者不可以用于本发明的特定实施方式中的替代的或者附加的特征。
为描述或者界定本发明之目的,请注意,术语“大约”在本发明中用于表述固有的不确定性程度,其中所述不确定性源于任何量化对比、数值、量度或者其它的表述。术语“大约”在本发明也用于定量描述与所述状态之间的可能变化程度,而对所研究主题的基本功能没有影响。
已经参照本发明的具体实施例对本发明进行了详细的描述,显然,在未脱离本发明在所附权利要求中所要求保护的范围内,可对本发明进行修改和变更。具体而言,尽管本公开的某些方面被确定为是优选的,或者特别有利的,可以预料,本公开并不必然地限于本发明的这些优选方面。
请注意下文的权利要求中的一项或者多项使用了术语“其中”作为过渡语。基于界定本发明之目的,该术语是作为开放式过渡语引进权利要求中的,其用于陈述所述结构的一系列特征,并且应当像解释通常使用的开放式前序术语“包括”一样解释这个词。
Claims (8)
1.一种硅基喷头电极,其包括后部、前部、多个喷头通道、多个后部凹陷和多个后部嵌入部,其中:
所述多个喷头通道从所述硅基喷头电极的所述后部延伸至所述硅基喷头电极的所述前部;
所述多个后部凹陷形成于所述硅基喷头电极的所述后部,所述后部凹陷在所述喷头电极的所述凹陷和所述硅基喷头电极的所述前部之间留有一定厚度的硅基电极材料;
所述后部嵌入部设置于沿着所述硅基喷头电极的所述后部的所述后部凹陷内;
所述后部嵌入部包括螺纹外径、螺纹内径和形成于所述螺纹内径内的工具啮合部;
所述后部嵌入部的所述工具啮合部包括绕所述后部嵌入部的转轴线布置的多个转矩接收槽;和
所述转矩接收槽布置成通过相对成对的转矩接收槽避免所述后部嵌入部的同轴转动。
2.如权利要求1所述的硅基喷头电极,其中:
形成所述工具啮合部以使所述后部嵌入部进一步包括位于所述工具啮合部和所述螺纹外径之间的一个或多个侧面防护部,从而防止与所述后部嵌入部的所述工具啮合部啮合的工具延长超出所述嵌入部的所述螺纹外径。
3.如权利要求1所述的硅基喷头电极,其中:
所述后部嵌入部的所述工具啮合部包括绕所述后部嵌入部的转轴线布置成三对相对成对的转矩接收槽的三个所述转矩接收槽;和
所述转矩接收槽布置成通过所述三对相对成对的转矩接收槽中的每一对避免所述后部嵌入部的同轴转动。
4.如权利要求1所述的硅基喷头电极,其中:
所述后部嵌入部的所述工具啮合部包括绕后部嵌入部的转轴线布置成n(n-l)/2对相对成对的转矩接收槽的n个转矩接收槽;和
所述转矩接收槽布置成通过所述n(n-l)/2对相对成对的转矩接收槽中的每一对避免所述后部嵌入部同轴转动。
5.如权利要求4所述的硅基喷头电极,其中:所述转矩接收槽绕所述转轴线等距离间隔,且n=3或n=5。
6.如权利要求4所述的硅基喷头电极,其中:所述转矩接收槽绕所述转轴线等距离间隔或不等距离间隔,且3≤n≤5。
7.如权利要求1所述的硅基喷头电极,其中:所述转矩接收槽定义沿着与所述后部嵌入部的所述转轴线平行的方向渐进的非收缩性的剖面轮廓。
8.如权利要求1所述的硅基喷头电极,其中:所述转矩接收槽由平行于所述转轴线方向延伸的无顶端侧壁定义。
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SG173904A1 (en) | 2011-09-29 |
JP2012521638A (ja) | 2012-09-13 |
TW201127217A (en) | 2011-08-01 |
WO2010111055A2 (en) | 2010-09-30 |
US9023177B2 (en) | 2015-05-05 |
TWI492672B (zh) | 2015-07-11 |
KR20110134424A (ko) | 2011-12-14 |
JP5986503B2 (ja) | 2016-09-06 |
CN102356700B (zh) | 2014-06-25 |
TW201538037A (zh) | 2015-10-01 |
TWI659673B (zh) | 2019-05-11 |
US20100038033A1 (en) | 2010-02-18 |
US20120193449A1 (en) | 2012-08-02 |
KR101651457B1 (ko) | 2016-08-26 |
US8187414B2 (en) | 2012-05-29 |
WO2010111055A3 (en) | 2011-01-13 |
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