JP5973165B2 - 半導体装置 - Google Patents

半導体装置 Download PDF

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Publication number
JP5973165B2
JP5973165B2 JP2011282459A JP2011282459A JP5973165B2 JP 5973165 B2 JP5973165 B2 JP 5973165B2 JP 2011282459 A JP2011282459 A JP 2011282459A JP 2011282459 A JP2011282459 A JP 2011282459A JP 5973165 B2 JP5973165 B2 JP 5973165B2
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Japan
Prior art keywords
insulating layer
transistor
oxide semiconductor
semiconductor
oxide
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Expired - Fee Related
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JP2011282459A
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Japanese (ja)
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JP2012151462A (ja
JP2012151462A5 (enExample
Inventor
山崎　舜平
舜平 山崎
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Semiconductor Energy Laboratory Co Ltd
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Semiconductor Energy Laboratory Co Ltd
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Priority to JP2011282459A priority Critical patent/JP5973165B2/ja
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Publication of JP2012151462A5 publication Critical patent/JP2012151462A5/ja
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    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/403—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells with charge regeneration common to a multiplicity of memory cells, i.e. external refresh
    • G11C11/404—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells with charge regeneration common to a multiplicity of memory cells, i.e. external refresh with one charge-transfer gate, e.g. MOS transistor, per cell
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
    • H10B41/70—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates the floating gate being an electrode shared by two or more components
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/421—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs having a particular composition, shape or crystalline structure of the active layer
    • H10D86/423—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs having a particular composition, shape or crystalline structure of the active layer comprising semiconductor materials not belonging to the Group IV, e.g. InGaZnO
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/60—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs wherein the TFTs are in active matrices
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C2211/00—Indexing scheme relating to digital stores characterized by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C2211/401—Indexing scheme relating to cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C2211/4016—Memory devices with silicon-on-insulator cells

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Semiconductor Memories (AREA)
  • Thin Film Transistor (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Dram (AREA)
JP2011282459A 2010-12-28 2011-12-23 半導体装置 Expired - Fee Related JP5973165B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2011282459A JP5973165B2 (ja) 2010-12-28 2011-12-23 半導体装置

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2010293040 2010-12-28
JP2010293040 2010-12-28
JP2011282459A JP5973165B2 (ja) 2010-12-28 2011-12-23 半導体装置

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2016139282A Division JP2016201561A (ja) 2010-12-28 2016-07-14 半導体装置

Publications (3)

Publication Number Publication Date
JP2012151462A JP2012151462A (ja) 2012-08-09
JP2012151462A5 JP2012151462A5 (enExample) 2015-01-08
JP5973165B2 true JP5973165B2 (ja) 2016-08-23

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Family Applications (5)

Application Number Title Priority Date Filing Date
JP2011282459A Expired - Fee Related JP5973165B2 (ja) 2010-12-28 2011-12-23 半導体装置
JP2016139282A Withdrawn JP2016201561A (ja) 2010-12-28 2016-07-14 半導体装置
JP2018009263A Active JP6576488B2 (ja) 2010-12-28 2018-01-24 半導体装置
JP2019117740A Withdrawn JP2019165259A (ja) 2010-12-28 2019-06-25 半導体装置
JP2021210466A Withdrawn JP2022031437A (ja) 2010-12-28 2021-12-24 半導体装置

Family Applications After (4)

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JP2016139282A Withdrawn JP2016201561A (ja) 2010-12-28 2016-07-14 半導体装置
JP2018009263A Active JP6576488B2 (ja) 2010-12-28 2018-01-24 半導体装置
JP2019117740A Withdrawn JP2019165259A (ja) 2010-12-28 2019-06-25 半導体装置
JP2021210466A Withdrawn JP2022031437A (ja) 2010-12-28 2021-12-24 半導体装置

Country Status (2)

Country Link
US (2) US8735892B2 (enExample)
JP (5) JP5973165B2 (enExample)

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US10186528B2 (en) 2014-02-24 2019-01-22 Lg Display Co., Ltd. Thin film transistor substrate and display using the same
US9721973B2 (en) 2014-02-24 2017-08-01 Lg Display Co., Ltd. Thin film transistor substrate and display using the same
US9214508B2 (en) 2014-02-24 2015-12-15 Lg Display Co., Ltd. Thin film transistor substrate with intermediate insulating layer and display using the same
EP2911202B1 (en) 2014-02-24 2019-02-20 LG Display Co., Ltd. Thin film transistor substrate and display using the same
US10325937B2 (en) 2014-02-24 2019-06-18 Lg Display Co., Ltd. Thin film transistor substrate with intermediate insulating layer and display using the same
US20150279674A1 (en) * 2014-04-01 2015-10-01 Intermolecular, Inc. CAAC IGZO Deposited at Room Temperature

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