JP5955323B2 - 構成可能な電力状態をもつダイナミックramphyインタフェース - Google Patents

構成可能な電力状態をもつダイナミックramphyインタフェース Download PDF

Info

Publication number
JP5955323B2
JP5955323B2 JP2013529258A JP2013529258A JP5955323B2 JP 5955323 B2 JP5955323 B2 JP 5955323B2 JP 2013529258 A JP2013529258 A JP 2013529258A JP 2013529258 A JP2013529258 A JP 2013529258A JP 5955323 B2 JP5955323 B2 JP 5955323B2
Authority
JP
Japan
Prior art keywords
power
interface
context
contexts
memory
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
JP2013529258A
Other languages
English (en)
Japanese (ja)
Other versions
JP2013543612A (ja
JP2013543612A5 (enExample
Inventor
サールズ ショーン
サールズ ショーン
ティー. ハンフリーズ ニコラス
ティー. ハンフリーズ ニコラス
ダブリュ. アミック ブライアン
ダブリュ. アミック ブライアン
ダブリュ. リーブス リチャード
ダブリュ. リーブス リチャード
チョウ ハンウー
チョウ ハンウー
エル. ペティジョン ロナルド
エル. ペティジョン ロナルド
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Advanced Micro Devices Inc
Original Assignee
Advanced Micro Devices Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Advanced Micro Devices Inc filed Critical Advanced Micro Devices Inc
Publication of JP2013543612A publication Critical patent/JP2013543612A/ja
Publication of JP2013543612A5 publication Critical patent/JP2013543612A5/ja
Application granted granted Critical
Publication of JP5955323B2 publication Critical patent/JP5955323B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • GPHYSICS
    • G06COMPUTING OR CALCULATING; COUNTING
    • G06FELECTRIC DIGITAL DATA PROCESSING
    • G06F1/00Details not covered by groups G06F3/00 - G06F13/00 and G06F21/00
    • G06F1/26Power supply means, e.g. regulation thereof
    • G06F1/32Means for saving power
    • G06F1/3203Power management, i.e. event-based initiation of a power-saving mode
    • G06F1/3234Power saving characterised by the action undertaken
    • G06F1/325Power saving in peripheral device
    • G06F1/3275Power saving in memory, e.g. RAM, cache
    • GPHYSICS
    • G06COMPUTING OR CALCULATING; COUNTING
    • G06FELECTRIC DIGITAL DATA PROCESSING
    • G06F13/00Interconnection of, or transfer of information or other signals between, memories, input/output devices or central processing units
    • G06F13/38Information transfer, e.g. on bus
    • G06F13/40Bus structure
    • GPHYSICS
    • G06COMPUTING OR CALCULATING; COUNTING
    • G06FELECTRIC DIGITAL DATA PROCESSING
    • G06F12/00Accessing, addressing or allocating within memory systems or architectures
    • GPHYSICS
    • G06COMPUTING OR CALCULATING; COUNTING
    • G06FELECTRIC DIGITAL DATA PROCESSING
    • G06F13/00Interconnection of, or transfer of information or other signals between, memories, input/output devices or central processing units
    • G06F13/14Handling requests for interconnection or transfer
    • G06F13/16Handling requests for interconnection or transfer for access to memory bus
    • G06F13/1668Details of memory controller
    • G06F13/1689Synchronisation and timing concerns
    • GPHYSICS
    • G06COMPUTING OR CALCULATING; COUNTING
    • G06FELECTRIC DIGITAL DATA PROCESSING
    • G06F13/00Interconnection of, or transfer of information or other signals between, memories, input/output devices or central processing units
    • G06F13/38Information transfer, e.g. on bus
    • G06F13/40Bus structure
    • G06F13/4063Device-to-bus coupling
    • G06F13/4068Electrical coupling
    • G06F13/4072Drivers or receivers
    • GPHYSICS
    • G06COMPUTING OR CALCULATING; COUNTING
    • G06FELECTRIC DIGITAL DATA PROCESSING
    • G06F13/00Interconnection of, or transfer of information or other signals between, memories, input/output devices or central processing units
    • G06F13/38Information transfer, e.g. on bus
    • G06F13/40Bus structure
    • G06F13/4063Device-to-bus coupling
    • G06F13/4068Electrical coupling
    • G06F13/4086Bus impedance matching, e.g. termination
    • GPHYSICS
    • G06COMPUTING OR CALCULATING; COUNTING
    • G06FELECTRIC DIGITAL DATA PROCESSING
    • G06F13/00Interconnection of, or transfer of information or other signals between, memories, input/output devices or central processing units
    • G06F13/38Information transfer, e.g. on bus
    • G06F13/42Bus transfer protocol, e.g. handshake; Synchronisation
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02DCLIMATE CHANGE MITIGATION TECHNOLOGIES IN INFORMATION AND COMMUNICATION TECHNOLOGIES [ICT], I.E. INFORMATION AND COMMUNICATION TECHNOLOGIES AIMING AT THE REDUCTION OF THEIR OWN ENERGY USE
    • Y02D10/00Energy efficient computing, e.g. low power processors, power management or thermal management

Landscapes

  • Engineering & Computer Science (AREA)
  • Theoretical Computer Science (AREA)
  • General Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Dram (AREA)
  • Power Sources (AREA)
JP2013529258A 2010-09-13 2011-09-13 構成可能な電力状態をもつダイナミックramphyインタフェース Active JP5955323B2 (ja)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US38208910P 2010-09-13 2010-09-13
US61/382,089 2010-09-13
US12/910,412 2010-10-22
US12/910,412 US8356155B2 (en) 2010-09-13 2010-10-22 Dynamic RAM Phy interface with configurable power states
PCT/US2011/051345 WO2012037086A1 (en) 2010-09-13 2011-09-13 Dynamic ram phy interface with configurable power states

Publications (3)

Publication Number Publication Date
JP2013543612A JP2013543612A (ja) 2013-12-05
JP2013543612A5 JP2013543612A5 (enExample) 2016-02-12
JP5955323B2 true JP5955323B2 (ja) 2016-07-20

Family

ID=44674909

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2013529258A Active JP5955323B2 (ja) 2010-09-13 2011-09-13 構成可能な電力状態をもつダイナミックramphyインタフェース

Country Status (6)

Country Link
US (2) US8356155B2 (enExample)
EP (1) EP2616946B1 (enExample)
JP (1) JP5955323B2 (enExample)
KR (1) KR101879707B1 (enExample)
CN (1) CN103168296B (enExample)
WO (1) WO2012037086A1 (enExample)

Families Citing this family (28)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8799553B2 (en) * 2010-04-13 2014-08-05 Apple Inc. Memory controller mapping on-the-fly
US9363115B2 (en) * 2012-07-02 2016-06-07 Taiwan Semiconductor Manufacturing Co., Ltd. System and method for aligning data bits
JP6184064B2 (ja) * 2012-07-19 2017-08-23 インターナショナル・ビジネス・マシーンズ・コーポレーションInternational Business Machines Corporation メモリサブシステム、コンピュータ・システム
TWI493566B (zh) * 2012-10-15 2015-07-21 Via Tech Inc 資料儲存裝置、儲存媒體控制器與控制方法
US9305632B2 (en) 2013-04-29 2016-04-05 Qualcomm Incorporated Frequency power manager
US9123408B2 (en) 2013-05-24 2015-09-01 Qualcomm Incorporated Low latency synchronization scheme for mesochronous DDR system
KR101925694B1 (ko) 2013-12-26 2018-12-05 인텔 코포레이션 멀티칩 패키지 링크
US10275386B2 (en) 2014-06-27 2019-04-30 Advanced Micro Devices, Inc. Memory physical layer interface logic for generating dynamic random access memory (DRAM) commands with programmable delays
US9639495B2 (en) * 2014-06-27 2017-05-02 Advanced Micro Devices, Inc. Integrated controller for training memory physical layer interface
KR20160029392A (ko) 2014-09-05 2016-03-15 에스케이하이닉스 주식회사 임피던스 조정 회로 및 이를 이용한 반도체 메모리와 메모리 시스템
US9733957B2 (en) * 2014-09-05 2017-08-15 Qualcomm Incorporated Frequency and power management
CN104536917B (zh) * 2015-01-19 2017-04-26 中国电子科技集团公司第二十四研究所 应用于fpaa的基于存储器的多功能动态配置电路
US10409357B1 (en) * 2016-09-30 2019-09-10 Cadence Design Systems, Inc. Command-oriented low power control method of high-bandwidth-memory system
JP2018101835A (ja) * 2016-12-19 2018-06-28 株式会社東芝 携帯可能電子装置、及びicカード
KR102340446B1 (ko) * 2017-09-08 2021-12-21 삼성전자주식회사 스토리지 장치 및 그것의 데이터 트레이닝 방법
CN110347620A (zh) * 2019-05-29 2019-10-18 深圳市紫光同创电子有限公司 一种fpga电路和系统
US20210200298A1 (en) * 2019-12-30 2021-07-01 Advanced Micro Devices, Inc. Long-idle state system and method
US11176986B2 (en) * 2019-12-30 2021-11-16 Advanced Micro Devices, Inc. Memory context restore, reduction of boot time of a system on a chip by reducing double data rate memory training
US11100028B1 (en) 2020-04-27 2021-08-24 Apex Semiconductor Programmable I/O switch/bridge chiplet
US12322433B2 (en) 2020-12-22 2025-06-03 Intel Corporation Power and performance optimization in a memory subsystem
US11609879B2 (en) * 2021-02-26 2023-03-21 Nvidia Corporation Techniques for configuring parallel processors for different application domains
US12437827B2 (en) * 2021-12-29 2025-10-07 Advanced Micro Devices, Inc. DRAM specific interface calibration via programmable training sequences
US12079490B2 (en) * 2021-12-29 2024-09-03 Advanced Micro Devices, Inc. Reducing power consumption associated with frequency transitioning in a memory interface
CN114492286B (zh) * 2022-01-18 2025-02-14 Oppo广东移动通信有限公司 控制芯片的方法及装置
CN115344215B (zh) * 2022-08-29 2025-03-18 深圳市紫光同创电子股份有限公司 存储器训练方法及系统
US12072381B2 (en) 2022-10-18 2024-08-27 Micron Technology, Inc. Multi-modal memory apparatuses and systems
US20240355379A1 (en) * 2023-04-21 2024-10-24 Advanced Micro Devices, Inc. Voltage Range for Training Physical Memory
WO2025024727A1 (en) * 2023-07-26 2025-01-30 Advanced Micro Devices, Inc. Memory self-refresh power gating

Family Cites Families (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4631659A (en) * 1984-03-08 1986-12-23 Texas Instruments Incorporated Memory interface with automatic delay state
US6154821A (en) * 1998-03-10 2000-11-28 Rambus Inc. Method and apparatus for initializing dynamic random access memory (DRAM) devices by levelizing a read domain
US6401213B1 (en) * 1999-07-09 2002-06-04 Micron Technology, Inc. Timing circuit for high speed memory
JP5034133B2 (ja) * 2000-02-29 2012-09-26 富士通セミコンダクター株式会社 半導体記憶装置
AU2001296911A1 (en) * 2000-09-26 2002-04-08 Sun Microsystems, Inc. Method and apparatus for reducing power consumption
US6618791B1 (en) * 2000-09-29 2003-09-09 Intel Corporation System and method for controlling power states of a memory device via detection of a chip select signal
US6788593B2 (en) * 2001-02-28 2004-09-07 Rambus, Inc. Asynchronous, high-bandwidth memory component using calibrated timing elements
KR100403347B1 (ko) * 2001-09-14 2003-11-01 주식회사 하이닉스반도체 반도체 메모리 장치의 파워-업 발생회로
US7000065B2 (en) * 2002-01-02 2006-02-14 Intel Corporation Method and apparatus for reducing power consumption in a memory bus interface by selectively disabling and enabling sense amplifiers
US6816994B2 (en) * 2002-06-21 2004-11-09 Micron Technology, Inc. Low power buffer implementation
US7234099B2 (en) * 2003-04-14 2007-06-19 International Business Machines Corporation High reliability memory module with a fault tolerant address and command bus
US6876593B2 (en) * 2003-07-01 2005-04-05 Intel Corporation Method and apparatus for partial refreshing of DRAMS
US20050198542A1 (en) 2004-03-08 2005-09-08 David Freker Method and apparatus for a variable memory enable deassertion wait time
US7386654B2 (en) 2004-10-15 2008-06-10 Intel Corporation Non-volatile configuration data storage for a configurable memory
KR100673904B1 (ko) * 2005-04-30 2007-01-25 주식회사 하이닉스반도체 반도체메모리소자
US7471130B2 (en) * 2005-05-19 2008-12-30 Micron Technology, Inc. Graduated delay line for increased clock skew correction circuit operating range
US8244971B2 (en) * 2006-07-31 2012-08-14 Google Inc. Memory circuit system and method
JP4615461B2 (ja) * 2006-03-10 2011-01-19 京セラミタ株式会社 メモリコントローラ
JP2007249738A (ja) * 2006-03-17 2007-09-27 Kawasaki Microelectronics Kk メモリアクセス制御装置
US7869287B2 (en) 2008-03-31 2011-01-11 Advanced Micro Devices, Inc. Circuit for locking a delay locked loop (DLL) and method therefor
JP2010160724A (ja) * 2009-01-09 2010-07-22 Ricoh Co Ltd メモリ制御システム、メモリ制御方法、メモリ制御プログラム及び記録媒体

Also Published As

Publication number Publication date
CN103168296A (zh) 2013-06-19
WO2012037086A1 (en) 2012-03-22
JP2013543612A (ja) 2013-12-05
US9274938B2 (en) 2016-03-01
KR101879707B1 (ko) 2018-07-18
US8356155B2 (en) 2013-01-15
US20120066445A1 (en) 2012-03-15
US20130124806A1 (en) 2013-05-16
EP2616946B1 (en) 2014-06-04
KR20140007331A (ko) 2014-01-17
EP2616946A1 (en) 2013-07-24
CN103168296B (zh) 2016-08-03

Similar Documents

Publication Publication Date Title
JP5955323B2 (ja) 構成可能な電力状態をもつダイナミックramphyインタフェース
US11550741B2 (en) Apparatuses and methods including memory commands for semiconductor memories
TWI895084B (zh) 記憶體中的增強型資料時鐘操作
KR102444201B1 (ko) 플랫폼 마지닝 및 디버그를 위한 소프트웨어 모드 레지스터 액세스
US8917563B2 (en) Semiconductor device and information processing system including an input circuit with a delay
US8363503B2 (en) Semiconductor memory device, memory controller that controls the same, and information processing system
US10573371B2 (en) Systems and methods for controlling data strobe signals during read operations
US10719058B1 (en) System and method for memory control having selectively distributed power-on processing
US10409357B1 (en) Command-oriented low power control method of high-bandwidth-memory system
US20150194196A1 (en) Memory system with high performance and high power efficiency and control method of the same
JP2012068873A (ja) メモリシステムおよびdramコントローラ
US11977757B2 (en) Real time profile switching for memory overclocking
CN117099071A (zh) 存储器控制器功率状态
US20080052481A1 (en) Method and circuit for transmitting a memory clock signal
EP4202604B1 (en) Fast self-refresh exit power state
US8379459B2 (en) Memory system with delay locked loop (DLL) bypass control
JP2024512684A (ja) データファブリッククロックスイッチング
JP4398066B2 (ja) メモリ制御方法、sdram制御方法及びメモリシステム

Legal Events

Date Code Title Description
A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20140819

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20150821

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20150915

A524 Written submission of copy of amendment under article 19 pct

Free format text: JAPANESE INTERMEDIATE CODE: A524

Effective date: 20151215

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20160517

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20160614

R150 Certificate of patent or registration of utility model

Ref document number: 5955323

Country of ref document: JP

Free format text: JAPANESE INTERMEDIATE CODE: R150

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250