JP5951993B2 - オプトエレクトロニクス半導体チップを製造する方法 - Google Patents

オプトエレクトロニクス半導体チップを製造する方法 Download PDF

Info

Publication number
JP5951993B2
JP5951993B2 JP2011535002A JP2011535002A JP5951993B2 JP 5951993 B2 JP5951993 B2 JP 5951993B2 JP 2011535002 A JP2011535002 A JP 2011535002A JP 2011535002 A JP2011535002 A JP 2011535002A JP 5951993 B2 JP5951993 B2 JP 5951993B2
Authority
JP
Japan
Prior art keywords
dopant
layer
semiconductor
doped
functional layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
JP2011535002A
Other languages
English (en)
Japanese (ja)
Other versions
JP2012508458A (ja
JP2012508458A5 (OSRAM
Inventor
アンドレアス ビーバースドルフ
アンドレアス ビーバースドルフ
ヴィンセント グロリア
ヴィンセント グロリア
ルッツ ヘッペル
ルッツ ヘッペル
ハンス−ユルゲン ルガウアー
ハンス−ユルゲン ルガウアー
マルチン ストラスバーグ
マルチン ストラスバーグ
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Ams Osram International GmbH
Original Assignee
Osram Opto Semiconductors GmbH
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Osram Opto Semiconductors GmbH filed Critical Osram Opto Semiconductors GmbH
Publication of JP2012508458A publication Critical patent/JP2012508458A/ja
Publication of JP2012508458A5 publication Critical patent/JP2012508458A5/ja
Application granted granted Critical
Publication of JP5951993B2 publication Critical patent/JP5951993B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/822—Materials of the light-emitting regions
    • H10H20/824—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP
    • H10H20/825—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP containing nitrogen, e.g. GaN
    • H10H20/8252—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP containing nitrogen, e.g. GaN characterised by the dopants
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/816—Bodies having carrier transport control structures, e.g. highly-doped semiconductor layers or current-blocking structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/817—Bodies characterised by the crystal structures or orientations, e.g. polycrystalline, amorphous or porous
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
JP2011535002A 2008-11-07 2009-10-12 オプトエレクトロニクス半導体チップを製造する方法 Active JP5951993B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
DE102008056371A DE102008056371A1 (de) 2008-11-07 2008-11-07 Verfahren zur Herstellung eines optoelektronischen Halbleiterchips und optoelektronischer Halbleiterchip
DE102008056371.4 2008-11-07
PCT/DE2009/001415 WO2010051786A1 (de) 2008-11-07 2009-10-12 Verfahren zur herstellung eines optoelektronischen halbleiterchips und optoelektronischer halbleiterchip

Publications (3)

Publication Number Publication Date
JP2012508458A JP2012508458A (ja) 2012-04-05
JP2012508458A5 JP2012508458A5 (OSRAM) 2012-08-30
JP5951993B2 true JP5951993B2 (ja) 2016-07-13

Family

ID=41667176

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2011535002A Active JP5951993B2 (ja) 2008-11-07 2009-10-12 オプトエレクトロニクス半導体チップを製造する方法

Country Status (8)

Country Link
US (1) US8598596B2 (OSRAM)
EP (1) EP2342762A1 (OSRAM)
JP (1) JP5951993B2 (OSRAM)
KR (1) KR20110088545A (OSRAM)
CN (1) CN102210031B (OSRAM)
DE (1) DE102008056371A1 (OSRAM)
TW (1) TW201027806A (OSRAM)
WO (1) WO2010051786A1 (OSRAM)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103184034A (zh) * 2013-01-04 2013-07-03 北京阳光溢彩科技有限公司 生态环保型粉尘抑制剂

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN106935576A (zh) * 2010-09-29 2017-07-07 皇家飞利浦电子股份有限公司 波长转换的发光器件
TWI456790B (zh) * 2012-09-28 2014-10-11 Phostek Inc 發光二極體裝置
US9379259B2 (en) * 2012-11-05 2016-06-28 International Business Machines Corporation Double layered transparent conductive oxide for reduced schottky barrier in photovoltaic devices
JP6051901B2 (ja) * 2013-02-05 2016-12-27 豊田合成株式会社 ｐ型ＩＩＩ 族窒化物半導体の製造方法
US20140353578A1 (en) * 2013-06-04 2014-12-04 Epistar Corporation Light-emitting device
KR102227981B1 (ko) * 2013-06-20 2021-03-16 삼성전자주식회사 단일 광자 소자, 단일 광자 방출 전달 장치, 단일 광자 소자의 제조 및 동작 방법
JP6459948B2 (ja) * 2015-12-15 2019-01-30 株式会社Sumco 半導体エピタキシャルウェーハの製造方法および固体撮像素子の製造方法
WO2017200845A1 (en) * 2016-05-20 2017-11-23 Lumileds Llc Method of forming a p-type layer for a light emitting device
EP3533088B1 (en) * 2016-10-28 2021-08-25 Lumileds LLC Methods for growing light emitting devices under ultra-violet illumination
US10541352B2 (en) * 2016-10-28 2020-01-21 Lumileds Llc Methods for growing light emitting devices under ultra-violet illumination
US10439103B2 (en) 2017-05-25 2019-10-08 Showa Denko K. K. Light-emitting diode and method for manufacturing tunnel junction layer
JP7122119B2 (ja) * 2017-05-25 2022-08-19 昭和電工光半導体株式会社 発光ダイオード
US11476383B2 (en) * 2018-02-02 2022-10-18 Cornell University Platforms enabled by buried tunnel junction for integrated photonic and electronic systems
JP7149486B2 (ja) 2020-04-21 2022-10-07 日亜化学工業株式会社 発光素子の製造方法
JP7607286B2 (ja) * 2021-09-10 2024-12-27 ウシオ電機株式会社 窒化物半導体発光素子

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5306662A (en) 1991-11-08 1994-04-26 Nichia Chemical Industries, Ltd. Method of manufacturing P-type compound semiconductor
TW329058B (en) * 1997-03-20 1998-04-01 Ind Tech Res Inst Manufacturing method for P type gallium nitride
JPH11126758A (ja) 1997-10-24 1999-05-11 Pioneer Electron Corp 半導体素子製造方法
JP2001044209A (ja) * 1999-07-27 2001-02-16 Furukawa Electric Co Ltd:The ＧａＮ系半導体装置の製造方法
KR20020056566A (ko) * 2000-12-29 2002-07-10 조장연 질화 갈륨계 반도체 박막의 피형 활성화 방법
JP2002319703A (ja) 2001-04-20 2002-10-31 Ricoh Co Ltd 半導体装置およびその作製方法
DE10152922B4 (de) * 2001-10-26 2010-05-12 Osram Opto Semiconductors Gmbh Nitrid-basierendes Halbleiterbauelement
TW517403B (en) * 2002-01-10 2003-01-11 Epitech Technology Corp Nitride light emitting diode and manufacturing method for the same
TW540170B (en) * 2002-07-08 2003-07-01 Arima Optoelectronics Corp Ohmic contact structure of semiconductor light emitting device and its manufacturing method
JP2004128189A (ja) * 2002-10-02 2004-04-22 Sanyo Electric Co Ltd 窒化ガリウム系化合物半導体の製造方法
KR100662191B1 (ko) * 2004-12-23 2006-12-27 엘지이노텍 주식회사 질화물 반도체 발광소자 및 그 제조방법
KR100580752B1 (ko) * 2004-12-23 2006-05-15 엘지이노텍 주식회사 질화물 반도체 발광소자 및 그 제조방법
JP5360789B2 (ja) * 2006-07-06 2013-12-04 独立行政法人産業技術総合研究所 ｐ型酸化亜鉛薄膜及びその作製方法
KR100748709B1 (ko) * 2006-09-18 2007-08-13 서울옵토디바이스주식회사 발광 소자 및 그 제조 방법
JP4827706B2 (ja) * 2006-12-04 2011-11-30 シャープ株式会社 窒化物半導体発光素子
DE102007019079A1 (de) * 2007-01-26 2008-07-31 Osram Opto Semiconductors Gmbh Verfahren zum Herstellen eines optoelektronischen Halbleiterchips und optoelektronischer Halbleiterchip

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103184034A (zh) * 2013-01-04 2013-07-03 北京阳光溢彩科技有限公司 生态环保型粉尘抑制剂

Also Published As

Publication number Publication date
CN102210031A (zh) 2011-10-05
US8598596B2 (en) 2013-12-03
EP2342762A1 (de) 2011-07-13
KR20110088545A (ko) 2011-08-03
JP2012508458A (ja) 2012-04-05
US20110278641A1 (en) 2011-11-17
DE102008056371A1 (de) 2010-05-12
TW201027806A (en) 2010-07-16
CN102210031B (zh) 2015-07-01
WO2010051786A1 (de) 2010-05-14

Similar Documents

Publication Publication Date Title
JP5951993B2 (ja) オプトエレクトロニクス半導体チップを製造する方法
CN113078243B (zh) 用于生长发光器件中的层的方法
EP3459117B1 (en) Method of forming a p-type layer for a light emitting device
Tan et al. Performance enhancement of InGaN light-emitting diodes by laser lift-off and transfer from sapphire to copper substrate
JP5193150B2 (ja) 窒化物半導体素子およびその製造方法
JP4504309B2 (ja) 発光ダイオード
JP2006066556A (ja) 窒化物半導体素子およびその製造方法
CN109690783B (zh) 形成发光器件的p型层的方法
CN105122475B (zh) 单片发光器件
US7821019B2 (en) Triple heterostructure incorporating a strained zinc oxide layer for emitting light at high temperatures
US9899570B2 (en) Semiconductor multilayer structure and method of manufacturing the same
JP7050060B2 (ja) 紫外線照射下で発光デバイスを成長させる方法
JP5521242B1 (ja) ＳｉＣ材料の製造方法及びＳｉＣ材料積層体
KR102099440B1 (ko) 발광 소자의 제조 방법
JP5219230B1 (ja) ＳｉＣ蛍光材料及びその製造方法並びに発光素子
JP2010098194A (ja) 蛍光体、発光素子、発光装置及び蛍光体の製造方法
JP2009267088A (ja) 発光素子用基板とそれを用いた発光装置
US8952399B2 (en) Light emitting device comprising a wavelength conversion layer having indirect bandgap energy and made of an N-type doped AlInGaP material
JPWO2008117788A1 (ja) 発光素子
Yeh et al. InGaN flip-chip light-emitting diodes with embedded air voids as light-scattering layer
Luo et al. Vertical InGaN multiple quantum wells light-emitting diodes structures transferred from Si (111) substrate onto electroplating copper submount with through-holes
KR20240132039A (ko) 발광 소자의 제조방법 및 발광 소자
JP4864940B2 (ja) 白色光源
JP2005209982A (ja) 半導体発光素子およびその製造方法
Connie Characterization of Al (Ga, In) N nanowire heterostructures and applications in light emitting diodes

Legal Events

Date Code Title Description
A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20120709

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20120709

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20130911

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20130917

A601 Written request for extension of time

Free format text: JAPANESE INTERMEDIATE CODE: A601

Effective date: 20131202

A602 Written permission of extension of time

Free format text: JAPANESE INTERMEDIATE CODE: A602

Effective date: 20131209

A02 Decision of refusal

Free format text: JAPANESE INTERMEDIATE CODE: A02

Effective date: 20140617

A601 Written request for extension of time

Free format text: JAPANESE INTERMEDIATE CODE: A601

Effective date: 20150807

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20151126

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20160304

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20160609

R150 Certificate of patent or registration of utility model

Ref document number: 5951993

Country of ref document: JP

Free format text: JAPANESE INTERMEDIATE CODE: R150

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250