JP2012508458A5 - - Google Patents
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- Publication number
- JP2012508458A5 JP2012508458A5 JP2011535002A JP2011535002A JP2012508458A5 JP 2012508458 A5 JP2012508458 A5 JP 2012508458A5 JP 2011535002 A JP2011535002 A JP 2011535002A JP 2011535002 A JP2011535002 A JP 2011535002A JP 2012508458 A5 JP2012508458 A5 JP 2012508458A5
- Authority
- JP
- Japan
- Prior art keywords
- dopant
- functional layer
- doped
- doped functional
- current
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000002019 doping agent Substances 0.000 claims 19
- 238000000034 method Methods 0.000 claims 16
- 239000002346 layers by function Substances 0.000 claims 13
- 239000004065 semiconductor Substances 0.000 claims 13
- 239000010410 layer Substances 0.000 claims 5
- 230000005670 electromagnetic radiation Effects 0.000 claims 3
- 230000005693 optoelectronics Effects 0.000 claims 3
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims 2
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 claims 2
- 238000010521 absorption reaction Methods 0.000 claims 2
- 229910052739 hydrogen Inorganic materials 0.000 claims 2
- 239000001257 hydrogen Substances 0.000 claims 2
- 229910052749 magnesium Inorganic materials 0.000 claims 2
- 239000011777 magnesium Substances 0.000 claims 2
- 239000000463 material Substances 0.000 claims 2
- 230000003213 activating effect Effects 0.000 claims 1
- 239000002131 composite material Substances 0.000 claims 1
- 230000006698 induction Effects 0.000 claims 1
- 230000001678 irradiating effect Effects 0.000 claims 1
- 238000004519 manufacturing process Methods 0.000 claims 1
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE102008056371A DE102008056371A1 (de) | 2008-11-07 | 2008-11-07 | Verfahren zur Herstellung eines optoelektronischen Halbleiterchips und optoelektronischer Halbleiterchip |
| DE102008056371.4 | 2008-11-07 | ||
| PCT/DE2009/001415 WO2010051786A1 (de) | 2008-11-07 | 2009-10-12 | Verfahren zur herstellung eines optoelektronischen halbleiterchips und optoelektronischer halbleiterchip |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2012508458A JP2012508458A (ja) | 2012-04-05 |
| JP2012508458A5 true JP2012508458A5 (OSRAM) | 2012-08-30 |
| JP5951993B2 JP5951993B2 (ja) | 2016-07-13 |
Family
ID=41667176
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2011535002A Active JP5951993B2 (ja) | 2008-11-07 | 2009-10-12 | オプトエレクトロニクス半導体チップを製造する方法 |
Country Status (8)
| Country | Link |
|---|---|
| US (1) | US8598596B2 (OSRAM) |
| EP (1) | EP2342762A1 (OSRAM) |
| JP (1) | JP5951993B2 (OSRAM) |
| KR (1) | KR20110088545A (OSRAM) |
| CN (1) | CN102210031B (OSRAM) |
| DE (1) | DE102008056371A1 (OSRAM) |
| TW (1) | TW201027806A (OSRAM) |
| WO (1) | WO2010051786A1 (OSRAM) |
Families Citing this family (16)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2012042452A2 (en) | 2010-09-29 | 2012-04-05 | Koninklijke Philips Electronics N.V. | Wavelength converted light emitting device |
| TWI456790B (zh) * | 2012-09-28 | 2014-10-11 | Phostek Inc | 發光二極體裝置 |
| US9379259B2 (en) * | 2012-11-05 | 2016-06-28 | International Business Machines Corporation | Double layered transparent conductive oxide for reduced schottky barrier in photovoltaic devices |
| CN103184034B (zh) * | 2013-01-04 | 2014-08-20 | 北京阳光溢彩科技有限公司 | 生态环保型粉尘抑制剂 |
| JP6051901B2 (ja) * | 2013-02-05 | 2016-12-27 | 豊田合成株式会社 | ｐ型ＩＩＩ 族窒化物半導体の製造方法 |
| US20140353578A1 (en) * | 2013-06-04 | 2014-12-04 | Epistar Corporation | Light-emitting device |
| KR102227981B1 (ko) * | 2013-06-20 | 2021-03-16 | 삼성전자주식회사 | 단일 광자 소자, 단일 광자 방출 전달 장치, 단일 광자 소자의 제조 및 동작 방법 |
| JP6459948B2 (ja) * | 2015-12-15 | 2019-01-30 | 株式会社Sumco | 半導体エピタキシャルウェーハの製造方法および固体撮像素子の製造方法 |
| US10749070B2 (en) * | 2016-05-20 | 2020-08-18 | Lumileds Llc | Method of forming a P-type layer for a light emitting device |
| TWI745465B (zh) * | 2016-10-28 | 2021-11-11 | 荷蘭商露明控股公司 | 用於在紫外光照射下生長發光裝置的方法 |
| US10541352B2 (en) * | 2016-10-28 | 2020-01-21 | Lumileds Llc | Methods for growing light emitting devices under ultra-violet illumination |
| US10439103B2 (en) | 2017-05-25 | 2019-10-08 | Showa Denko K. K. | Light-emitting diode and method for manufacturing tunnel junction layer |
| JP7122119B2 (ja) * | 2017-05-25 | 2022-08-19 | 昭和電工光半導体株式会社 | 発光ダイオード |
| US11476383B2 (en) * | 2018-02-02 | 2022-10-18 | Cornell University | Platforms enabled by buried tunnel junction for integrated photonic and electronic systems |
| JP7149486B2 (ja) | 2020-04-21 | 2022-10-07 | 日亜化学工業株式会社 | 発光素子の製造方法 |
| JP7607286B2 (ja) * | 2021-09-10 | 2024-12-27 | ウシオ電機株式会社 | 窒化物半導体発光素子 |
Family Cites Families (16)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5306662A (en) | 1991-11-08 | 1994-04-26 | Nichia Chemical Industries, Ltd. | Method of manufacturing P-type compound semiconductor |
| TW329058B (en) | 1997-03-20 | 1998-04-01 | Ind Tech Res Inst | Manufacturing method for P type gallium nitride |
| JPH11126758A (ja) | 1997-10-24 | 1999-05-11 | Pioneer Electron Corp | 半導体素子製造方法 |
| JP2001044209A (ja) | 1999-07-27 | 2001-02-16 | Furukawa Electric Co Ltd:The | ＧａＮ系半導体装置の製造方法 |
| KR20020056566A (ko) * | 2000-12-29 | 2002-07-10 | 조장연 | 질화 갈륨계 반도체 박막의 피형 활성화 방법 |
| JP2002319703A (ja) | 2001-04-20 | 2002-10-31 | Ricoh Co Ltd | 半導体装置およびその作製方法 |
| DE10152922B4 (de) * | 2001-10-26 | 2010-05-12 | Osram Opto Semiconductors Gmbh | Nitrid-basierendes Halbleiterbauelement |
| TW517403B (en) | 2002-01-10 | 2003-01-11 | Epitech Technology Corp | Nitride light emitting diode and manufacturing method for the same |
| TW540170B (en) * | 2002-07-08 | 2003-07-01 | Arima Optoelectronics Corp | Ohmic contact structure of semiconductor light emitting device and its manufacturing method |
| JP2004128189A (ja) | 2002-10-02 | 2004-04-22 | Sanyo Electric Co Ltd | 窒化ガリウム系化合物半導体の製造方法 |
| KR100662191B1 (ko) * | 2004-12-23 | 2006-12-27 | 엘지이노텍 주식회사 | 질화물 반도체 발광소자 및 그 제조방법 |
| KR100580752B1 (ko) * | 2004-12-23 | 2006-05-15 | 엘지이노텍 주식회사 | 질화물 반도체 발광소자 및 그 제조방법 |
| JP5360789B2 (ja) * | 2006-07-06 | 2013-12-04 | 独立行政法人産業技術総合研究所 | ｐ型酸化亜鉛薄膜及びその作製方法 |
| KR100748709B1 (ko) * | 2006-09-18 | 2007-08-13 | 서울옵토디바이스주식회사 | 발광 소자 및 그 제조 방법 |
| JP4827706B2 (ja) | 2006-12-04 | 2011-11-30 | シャープ株式会社 | 窒化物半導体発光素子 |
| DE102007019079A1 (de) * | 2007-01-26 | 2008-07-31 | Osram Opto Semiconductors Gmbh | Verfahren zum Herstellen eines optoelektronischen Halbleiterchips und optoelektronischer Halbleiterchip |
-
2008
- 2008-11-07 DE DE102008056371A patent/DE102008056371A1/de not_active Ceased
-
2009
- 2009-10-12 WO PCT/DE2009/001415 patent/WO2010051786A1/de not_active Ceased
- 2009-10-12 EP EP09765005A patent/EP2342762A1/de not_active Withdrawn
- 2009-10-12 CN CN200980144749.0A patent/CN102210031B/zh active Active
- 2009-10-12 KR KR1020117012745A patent/KR20110088545A/ko not_active Ceased
- 2009-10-12 US US13/128,050 patent/US8598596B2/en active Active
- 2009-10-12 JP JP2011535002A patent/JP5951993B2/ja active Active
- 2009-11-04 TW TW098137382A patent/TW201027806A/zh unknown
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