TW201027806A - Method for the producing of an optoelectronic semiconductor chip and optoelectronic semiconductor chip - Google Patents

Method for the producing of an optoelectronic semiconductor chip and optoelectronic semiconductor chip Download PDF

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Publication number
TW201027806A
TW201027806A TW098137382A TW98137382A TW201027806A TW 201027806 A TW201027806 A TW 201027806A TW 098137382 A TW098137382 A TW 098137382A TW 98137382 A TW98137382 A TW 98137382A TW 201027806 A TW201027806 A TW 201027806A
Authority
TW
Taiwan
Prior art keywords
doped
layer
dopant
semiconductor
functional layer
Prior art date
Application number
TW098137382A
Other languages
English (en)
Chinese (zh)
Inventor
Vincent Grolier
Lutz Hoeppel
Andreas Biebersdorf
Hans-Juergen Lugauer
Martin Strassburg
Original Assignee
Osram Opto Semiconductors Gmbh
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Osram Opto Semiconductors Gmbh filed Critical Osram Opto Semiconductors Gmbh
Publication of TW201027806A publication Critical patent/TW201027806A/zh

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/822—Materials of the light-emitting regions
    • H10H20/824—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP
    • H10H20/825—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP containing nitrogen, e.g. GaN
    • H10H20/8252—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP containing nitrogen, e.g. GaN characterised by the dopants
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/816—Bodies having carrier transport control structures, e.g. highly-doped semiconductor layers or current-blocking structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/817—Bodies characterised by the crystal structures or orientations, e.g. polycrystalline, amorphous or porous
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Led Devices (AREA)
TW098137382A 2008-11-07 2009-11-04 Method for the producing of an optoelectronic semiconductor chip and optoelectronic semiconductor chip TW201027806A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE102008056371A DE102008056371A1 (de) 2008-11-07 2008-11-07 Verfahren zur Herstellung eines optoelektronischen Halbleiterchips und optoelektronischer Halbleiterchip

Publications (1)

Publication Number Publication Date
TW201027806A true TW201027806A (en) 2010-07-16

Family

ID=41667176

Family Applications (1)

Application Number Title Priority Date Filing Date
TW098137382A TW201027806A (en) 2008-11-07 2009-11-04 Method for the producing of an optoelectronic semiconductor chip and optoelectronic semiconductor chip

Country Status (8)

Country Link
US (1) US8598596B2 (OSRAM)
EP (1) EP2342762A1 (OSRAM)
JP (1) JP5951993B2 (OSRAM)
KR (1) KR20110088545A (OSRAM)
CN (1) CN102210031B (OSRAM)
DE (1) DE102008056371A1 (OSRAM)
TW (1) TW201027806A (OSRAM)
WO (1) WO2010051786A1 (OSRAM)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI456790B (zh) * 2012-09-28 2014-10-11 Phostek Inc 發光二極體裝置
TWI648769B (zh) * 2015-12-15 2019-01-21 日商Ｓｕｍｃｏ股份有限公司 半導體磊晶晶圓的製造方法以及固體攝像元件的製造方法

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CN106935576A (zh) * 2010-09-29 2017-07-07 皇家飞利浦电子股份有限公司 波长转换的发光器件
US9379259B2 (en) * 2012-11-05 2016-06-28 International Business Machines Corporation Double layered transparent conductive oxide for reduced schottky barrier in photovoltaic devices
CN103184034B (zh) * 2013-01-04 2014-08-20 北京阳光溢彩科技有限公司 生态环保型粉尘抑制剂
JP6051901B2 (ja) * 2013-02-05 2016-12-27 豊田合成株式会社 ｐ型ＩＩＩ 族窒化物半導体の製造方法
US20140353578A1 (en) * 2013-06-04 2014-12-04 Epistar Corporation Light-emitting device
KR102227981B1 (ko) * 2013-06-20 2021-03-16 삼성전자주식회사 단일 광자 소자, 단일 광자 방출 전달 장치, 단일 광자 소자의 제조 및 동작 방법
WO2017200845A1 (en) * 2016-05-20 2017-11-23 Lumileds Llc Method of forming a p-type layer for a light emitting device
EP3533088B1 (en) * 2016-10-28 2021-08-25 Lumileds LLC Methods for growing light emitting devices under ultra-violet illumination
US10541352B2 (en) * 2016-10-28 2020-01-21 Lumileds Llc Methods for growing light emitting devices under ultra-violet illumination
US10439103B2 (en) 2017-05-25 2019-10-08 Showa Denko K. K. Light-emitting diode and method for manufacturing tunnel junction layer
JP7122119B2 (ja) * 2017-05-25 2022-08-19 昭和電工光半導体株式会社 発光ダイオード
US11476383B2 (en) * 2018-02-02 2022-10-18 Cornell University Platforms enabled by buried tunnel junction for integrated photonic and electronic systems
JP7149486B2 (ja) 2020-04-21 2022-10-07 日亜化学工業株式会社 発光素子の製造方法
JP7607286B2 (ja) * 2021-09-10 2024-12-27 ウシオ電機株式会社 窒化物半導体発光素子

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US5306662A (en) 1991-11-08 1994-04-26 Nichia Chemical Industries, Ltd. Method of manufacturing P-type compound semiconductor
TW329058B (en) * 1997-03-20 1998-04-01 Ind Tech Res Inst Manufacturing method for P type gallium nitride
JPH11126758A (ja) 1997-10-24 1999-05-11 Pioneer Electron Corp 半導体素子製造方法
JP2001044209A (ja) * 1999-07-27 2001-02-16 Furukawa Electric Co Ltd:The ＧａＮ系半導体装置の製造方法
KR20020056566A (ko) * 2000-12-29 2002-07-10 조장연 질화 갈륨계 반도체 박막의 피형 활성화 방법
JP2002319703A (ja) 2001-04-20 2002-10-31 Ricoh Co Ltd 半導体装置およびその作製方法
DE10152922B4 (de) * 2001-10-26 2010-05-12 Osram Opto Semiconductors Gmbh Nitrid-basierendes Halbleiterbauelement
TW517403B (en) * 2002-01-10 2003-01-11 Epitech Technology Corp Nitride light emitting diode and manufacturing method for the same
TW540170B (en) * 2002-07-08 2003-07-01 Arima Optoelectronics Corp Ohmic contact structure of semiconductor light emitting device and its manufacturing method
JP2004128189A (ja) * 2002-10-02 2004-04-22 Sanyo Electric Co Ltd 窒化ガリウム系化合物半導体の製造方法
KR100662191B1 (ko) * 2004-12-23 2006-12-27 엘지이노텍 주식회사 질화물 반도체 발광소자 및 그 제조방법
KR100580752B1 (ko) * 2004-12-23 2006-05-15 엘지이노텍 주식회사 질화물 반도체 발광소자 및 그 제조방법
JP5360789B2 (ja) * 2006-07-06 2013-12-04 独立行政法人産業技術総合研究所 ｐ型酸化亜鉛薄膜及びその作製方法
KR100748709B1 (ko) * 2006-09-18 2007-08-13 서울옵토디바이스주식회사 발광 소자 및 그 제조 방법
JP4827706B2 (ja) * 2006-12-04 2011-11-30 シャープ株式会社 窒化物半導体発光素子
DE102007019079A1 (de) * 2007-01-26 2008-07-31 Osram Opto Semiconductors Gmbh Verfahren zum Herstellen eines optoelektronischen Halbleiterchips und optoelektronischer Halbleiterchip

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI456790B (zh) * 2012-09-28 2014-10-11 Phostek Inc 發光二極體裝置
TWI648769B (zh) * 2015-12-15 2019-01-21 日商Ｓｕｍｃｏ股份有限公司 半導體磊晶晶圓的製造方法以及固體攝像元件的製造方法

Also Published As

Publication number Publication date
CN102210031A (zh) 2011-10-05
US8598596B2 (en) 2013-12-03
EP2342762A1 (de) 2011-07-13
KR20110088545A (ko) 2011-08-03
JP2012508458A (ja) 2012-04-05
US20110278641A1 (en) 2011-11-17
DE102008056371A1 (de) 2010-05-12
JP5951993B2 (ja) 2016-07-13
CN102210031B (zh) 2015-07-01
WO2010051786A1 (de) 2010-05-14

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