JP5941919B2 - 工作物のプラズマ処理方法および装置 - Google Patents
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- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
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- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
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- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
- C23C16/515—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using pulsed discharges
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- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
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Description
本発明は、さらに、工作物を受容するための真空化可能な少なくとも1つのプラズマチャンバーを有し、該プラズマチャンバーが、前記工作物側から順に接着層とバリア層と保護層とを前記工作物上にコーティングする処理ステーションの領域に配置され、前記プラズマチャンバーがチャンバー底部と、チャンバーカバーと、側部のチャンバー壁とによって画成され、前記プラズマチャンバーがパルス化したマイクロ波エネルギーによってプラズマを点火するための機構と連結され、マイクロ波の作用段階と遮断段階とを交互に発生させるためにマイクロ波エネルギーのカップリングを制御する制御機構が設けられている、工作物をプラズマ処理するための装置にも関わる。
Claims (13)
- 工作物をプラズマチャンバー内に挿入し、次に負圧を作用させた状態でプラズマの点火後に工作物上に、工作物側から順に接着層とバリア層と保護層とをコーティングし、プラズマの点火をパルス化されたマイクロ波エネルギーによって行い、マイクロ波の作用段階と遮断段階とを制御部によって択一的に設定するようにした、工作物をプラズマ処理する方法において、
工作物(5)に対し処理工程を実施している間、前記作用段階の作用時間(43)と前記遮断段階の遮断時間(44)との関係を変化させ、前記バリア層(40)のコーティング工程を継続している間、前記作用時間(44)と前記遮断時間(45)との商である前記作用時間(43)/前記遮断時間(44)の値を、当初は大きくさせ、その後再び小さくさせることを特徴とする方法。 - プラズマ処理を実施している間、作用時間(43)の長さと遮断時間(44)の長さとの前記商の値を増大させることを特徴とする、請求項1に記載の方法。
- プラズマ処理の継続時間の少なくとも一部の間、2つの前記作用時間(43)の間の前記遮断時間(44)の長さを一定に保持することを特徴とする、請求項1または2に記載の方法。
- 前記遮断時間(44)が30ミリ秒であることを特徴とする、請求項1から3までのいずれか一つに記載の方法。
- プラズマ処理開始時の前記作用時間(43)が0.3ミリ秒であることを特徴とする、請求項1から4までのいずれか一つに記載の方法。
- プラズマ処理終了時の前記作用時間(43)が0.3ミリ秒であることを特徴とする、請求項1から4までのいずれか一つに記載の方法。
- プラズマ工程を継続している間の前記作用時間(43)を連続的に増大させることを特徴とする、請求項1から6までのいずれか一つに記載の方法。
- 前記工作物(5)としての瓶状の容器にバリア層(40)を備えさせることを特徴とする、請求項1から7までのいずれか一つに記載の方法。
- 前記バリア層(40)に、層厚(43)にわたって、可変炭素成分を備えさせることを特徴とする、請求項8に記載の方法。
- 前記バリア層(40)として、SiOxを含んでいる層を使用することを特徴とする、請求項8または9に記載の方法。
- 前記バリア層(40)内の炭素成分を、前記工作物(5)を起点として当初は層厚(43)にわたって減少させ、前記工作物(5)とは逆の領域において再び増大させることを特徴とする、請求項9または10に記載の方法。
- 工作物を受容するための真空化可能な少なくとも1つのプラズマチャンバーを有し、該プラズマチャンバーが、前記工作物側から順に接着層とバリア層と保護層とを前記工作物上にコーティングするコーティング処理ステーションの領域に配置され、前記プラズマチャンバーがチャンバー底部と、チャンバーカバーと、側部のチャンバー壁とによって画成され、前記プラズマチャンバーがパルス化したマイクロ波エネルギーによってプラズマを点火するための機構と連結され、マイクロ波の作用段階と遮断段階とを交互に発生させるためにマイクロ波エネルギーのカップリングを制御する制御機構が設けられている、工作物をプラズマ処理するための装置において、
1つの工作物(5)に対しする処理工程を実施している間に、前記制御機構が前記作用段階の作用時間(44)と前記遮断段階の遮断時間(45)との間の関係を変化させ、前記バリア層(40)のコーティング工程を継続している間、前記作用時間(43)と前記遮断時間(44)との商である前記作用時間(43)/前記遮断時間(44)の値を、当初は大きくさせ、その後再び小さくさせることを特徴とする装置。 - 瓶状工作物(5)の内表面にバリア層(40)を生成させるための機構が設けられていることを特徴とする、請求項12に記載の装置。
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DE102010048960.3 | 2010-10-18 | ||
DE102010048960A DE102010048960A1 (de) | 2010-10-18 | 2010-10-18 | Verfahren und Vorrichtung zur Plasmabehandlung von Werkstücken |
PCT/DE2011/001691 WO2012051975A1 (de) | 2010-10-18 | 2011-09-01 | Verfahren und vorrichtung zur plasmabehandlung von werkstücken |
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DE102012204690A1 (de) * | 2012-03-23 | 2013-09-26 | Krones Ag | Vorrichtung zum Plasmabeschichten von Füllgutbehältern, wie Flaschen |
US20210040608A1 (en) * | 2019-08-05 | 2021-02-11 | GM Global Technology Operations LLC | Method for bonding a polymeric material to a substrate |
DE102019128739A1 (de) * | 2019-10-24 | 2021-04-29 | Krones Ag | Behälterbehandlungsanlage und Verfahren zum Behandeln von Behältern |
DE102020130917A1 (de) | 2020-11-23 | 2022-05-25 | Khs Corpoplast Gmbh | Mehrweg-Kunststoffbehälter, Verfahren zum Waschen von solchen Behältern, Verfahren zum Beschichten von solchen Behältern und Behälterbehandlungsmaschine für die Getränkeindustrie |
CN114231952B (zh) * | 2021-12-27 | 2022-08-19 | 广东思泉新材料股份有限公司 | Cvd镀膜设备 |
DE102022105041A1 (de) | 2022-03-03 | 2023-09-07 | IonKraft GmbH | Beschichtungstechnik für Kunststoffbehälter |
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DE1010773B (de) | 1953-12-18 | 1957-06-19 | Hans Von Schalscha Ehrenfeld | Dreschvorrichtung fuer Getreide und aehnliche Koernerfruechte |
JP2687966B2 (ja) * | 1990-08-20 | 1997-12-08 | 富士通株式会社 | 半導体装置の製造方法 |
US5261965A (en) * | 1992-08-28 | 1993-11-16 | Texas Instruments Incorporated | Semiconductor wafer cleaning using condensed-phase processing |
JP3026704B2 (ja) * | 1993-07-29 | 2000-03-27 | 富士通株式会社 | マグネトロン発振出力制御装置及びプラズマ処理方法 |
PE47195A1 (es) | 1994-02-16 | 1996-02-07 | Coca Cola Co | Recipientes huecos con superficie interna inerte o impermeable obtenida mediante reaccion de la superficie facilitada por plasma o polimerizacion sobre la superficie |
DE4445427C2 (de) * | 1994-12-20 | 1997-04-30 | Schott Glaswerke | Plasma-CVD-Verfahren zur Herstellung einer Gradientenschicht |
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WO2012051975A8 (de) | 2013-05-16 |
EP2630273A1 (de) | 2013-08-28 |
WO2012051975A1 (de) | 2012-04-26 |
US20130202814A1 (en) | 2013-08-08 |
DE102010048960A1 (de) | 2012-04-19 |
EP2630273B1 (de) | 2019-05-08 |
US9169559B2 (en) | 2015-10-27 |
JP2013544966A (ja) | 2013-12-19 |
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