JP5933736B2 - 機能性デバイス及び機能性デバイスの製造方法 - Google Patents
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Description
本願は、2012年9月28日に出願された日本国特願2012−216267号に基づき優先権を主張し、その内容をここに援用する。
ここで、接合後の基板2、6の接合部7のフッ素濃度は、接合した後の基板2、6を剥離し、その表面のフッ素濃度を測定して得た値である。
すなわち、本発明に係る基板は、表面にSiO2が存在している基板であればよく、より好ましくは表面にSiO2層が存在している基板であればよく、このような基板を用いることで、本実施形態と同様の機能性デバイスBを製造でき、本実施形態と同様の作用効果を得ることが可能である。
また、触媒5は、例えば化学反応速度を促進して反応物の生成速度を向上させる作用を発現するものであり、酸化チタン、パラジウム、鉄、モリブデンなどが一例として挙げられる。そして、この触媒5を修飾配置する際には、スパッタリング法や化学蒸着法、物理蒸着法、触媒粒子の付着などの方法を適用することができる。
1a マイクロチャネル(マイクロ流路、溝)
1b ナノチャネル(ナノ流路、拡張ナノ流路、溝)
2 一方のガラス基板(一方の基板、第1の基板)
2a 一面
3 捕捉体(修飾物)
4 電極(修飾物)
5 触媒(修飾物)
6 他方のガラス基板(他方の基板、第2の基板)
6a 一面
7 接合部
10 APTES(捕捉体(修飾物))
11 対象物質
12 フォトマスク
A 従来の機能性デバイス
B 機能性デバイス
S 試料溶液
Claims (13)
- 一面に溝が形成された第1の基板と、
前記第1の基板と互いの一面同士を接合して一体に設けられ、前記第1の基板の溝とともに流路を形成する第2の基板と、
前記流路の内面の一部に修飾して配設され、前記流路内に供給した対象物質を捕捉する捕捉体、前記対象物質に電気的または化学的な作用を与える電極、触媒のうち少なくとも一つの修飾物とを備えてなり、
前記第1の基板と前記第2の基板はそれぞれ、ガラス基板あるいはシリコン基板であり、
前記第1の基板と前記第2の基板の一面同士の接合部が、少なくとも一方の基板のシリカがフッ素と結合したF−Si結合を含み、
前記第1の基板と前記第2の基板の一面同士の接合部のフッ素濃度が0.6at.%以上であることを特徴とする機能性デバイス。 - 請求項1に記載の機能性デバイスにおいて、
前記第1の基板と前記第2の基板の少なくとも一方の基板は、接合前の前記一面にSiO2層を備えた基板であることを特徴とする機能性デバイス。 - 請求項1または2のいずれかに記載の機能性デバイスにおいて、
前記流路がマイクロあるいはナノスケールの微細流路であることを特徴とする機能性デバイス。 - 請求項1〜3のいずれか一項に記載の機能性デバイスにおいて、
前記接合部の接合強度が0.5J/m2以上であることを特徴とする機能性デバイス。 - 請求項1〜4のいずれか一項に記載の機能性デバイスにおいて、
前記修飾物がシランカップリング剤からなる捕捉体であることを特徴とする機能性デバイス。 - 第1の基板の一面に溝を形成する工程と、
前記第1の基板と第2の基板とを接合したときに前記溝と前記第2の基板の一面とによって形成される流路の内面に対応する位置に、捕捉体、電極、触媒のうち少なくとも一つの修飾物を配置する工程と、
前記第1の基板の一面と前記第2の基板の一面の少なくとも一方に酸素プラズマ照射とフッ素供給を行い、その一面の親水性を調整する工程と、
修飾配置した前記修飾物が熱損傷することのない温度を保持しながら前記第1の基板と前記第2の基板の前記一面同士を接合する工程とを備え、
前記第1の基板と前記第2の基板がそれぞれ、ガラス基板あるいはシリコン基板であることを特徴とする機能性デバイスの製造方法。 - 請求項6に記載の機能性デバイスの製造方法において、
前記流路がマイクロあるいはナノスケールの微細流路であることを特徴とする機能性デバイスの製造方法。 - 請求項6または7のいずれかに記載の機能性デバイスの製造方法において、
接合前の前記第1の基板の一面と前記第2の基板の一面の少なくともいずれか一方の水の接触角が10度から50度であることを特徴とする機能性デバイスの製造方法。 - 請求項6〜8のいずれか一項に記載の機能性デバイスの製造方法において、
前記温度が25〜100℃であることを特徴とする機能性デバイスの製造方法。 - 請求項6〜9のいずれか一項に記載の機能性デバイスの製造方法において、
前記修飾物がシランカップリング剤からなる捕捉体であることを特徴とする機能性デバイスの製造方法。 - 請求項6〜10のいずれか一項に記載の機能性デバイスの製造方法において、
前記修飾物を修飾して配置する工程において、パターニングの際に行う洗浄工程として、フォトマスクを通じて真空紫外線光を照射するようにしたことを特徴とする機能性デバイスの製造方法。 - 請求項6〜11のいずれか一項に記載の機能性デバイスの製造方法において、
前記修飾物を修飾して配置する工程において、パターニングの際に行う洗浄工程として、フォトマスクを通じてプラズマを照射するようにしたことを特徴とする機能性デバイスの製造方法。 - 請求項1〜5のいずれか一項に記載の機能性デバイスを用いた対象物質の検出方法であって、
前記流路に対象物質を含む試料溶液を注入する工程と、
前記流路内の前記修飾物に捕捉された対象物質を検出する工程と、を有することを特徴とする対象物質の検出方法。
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Application Number | Priority Date | Filing Date | Title |
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JP2012216267 | 2012-09-28 | ||
JP2012216267 | 2012-09-28 | ||
PCT/JP2013/076271 WO2014051054A1 (ja) | 2012-09-28 | 2013-09-27 | 機能性デバイス及び機能性デバイスの製造方法 |
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JP5933736B2 true JP5933736B2 (ja) | 2016-06-15 |
JPWO2014051054A1 JPWO2014051054A1 (ja) | 2016-08-22 |
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US10286640B2 (en) | 2015-03-19 | 2019-05-14 | Ushio Denki Kabushiki Kaisha | Process for laminating works together |
JP2017080820A (ja) * | 2015-10-22 | 2017-05-18 | 学校法人立命館 | 流体デバイスの製造方法および流体デバイス |
US10702866B2 (en) | 2017-02-15 | 2020-07-07 | International Business Machines Corporation | Layered silicon and stacking of microfluidic chips |
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JP2007075950A (ja) * | 2005-09-14 | 2007-03-29 | Kobe Steel Ltd | マイクロ流体デバイスおよびその製法 |
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JP2007075950A (ja) * | 2005-09-14 | 2007-03-29 | Kobe Steel Ltd | マイクロ流体デバイスおよびその製法 |
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