JP5920554B1 - 強化ガラス基板の製造方法 - Google Patents
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- 239000000758 substrate Substances 0.000 title claims abstract description 160
- 239000005341 toughened glass Substances 0.000 title claims abstract description 111
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 32
- 239000011521 glass Substances 0.000 claims abstract description 102
- 238000005342 ion exchange Methods 0.000 claims abstract description 42
- 239000006066 glass batch Substances 0.000 claims abstract description 10
- 239000006060 molten glass Substances 0.000 claims abstract description 9
- 239000002994 raw material Substances 0.000 claims abstract description 7
- 238000002844 melting Methods 0.000 claims abstract description 6
- 230000008018 melting Effects 0.000 claims abstract description 6
- 229910018072 Al 2 O 3 Inorganic materials 0.000 claims description 29
- 229910004298 SiO 2 Inorganic materials 0.000 claims description 23
- 239000000203 mixture Substances 0.000 claims description 23
- 229910052708 sodium Inorganic materials 0.000 claims description 11
- 239000012528 membrane Substances 0.000 claims description 9
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- 229910018068 Li 2 O Inorganic materials 0.000 description 20
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 14
- 238000004031 devitrification Methods 0.000 description 11
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- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 3
- 229910006404 SnO 2 Inorganic materials 0.000 description 2
- 239000000853 adhesive Substances 0.000 description 2
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- 229910000287 alkaline earth metal oxide Inorganic materials 0.000 description 2
- 238000005452 bending Methods 0.000 description 2
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- 239000002184 metal Substances 0.000 description 2
- 239000000843 powder Substances 0.000 description 2
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- 238000005496 tempering Methods 0.000 description 2
- 229910000314 transition metal oxide Inorganic materials 0.000 description 2
- 238000007088 Archimedes method Methods 0.000 description 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 229910021193 La 2 O 3 Inorganic materials 0.000 description 1
- 238000006124 Pilkington process Methods 0.000 description 1
- GEIAQOFPUVMAGM-UHFFFAOYSA-N ZrO Inorganic materials [Zr]=O GEIAQOFPUVMAGM-UHFFFAOYSA-N 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 239000003513 alkali Substances 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 239000007864 aqueous solution Substances 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
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- 229910052802 copper Inorganic materials 0.000 description 1
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- 229910003437 indium oxide Inorganic materials 0.000 description 1
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 description 1
- 238000011835 investigation Methods 0.000 description 1
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- 229910052759 nickel Inorganic materials 0.000 description 1
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- 239000002356 single layer Substances 0.000 description 1
- 239000002344 surface layer Substances 0.000 description 1
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- 229910052723 transition metal Inorganic materials 0.000 description 1
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Abstract
Description
(1)質量%で、SiO2 45〜75%、Al2O3 1〜25%、Li2O 0〜9%、Na2O 7〜20%、K2O 0〜8%を含有し、実質的にAs2O3、F、PbOを含有しない、
(2)質量%で、SiO2 45〜75%、Al2O3 3〜25%、Li2O 0〜3.5%、Na2O 7〜20%、K2O 0〜8%を含有し、質量比(Al2O3+K2O)/Na2Oが0.1〜3であり、実質的にAs2O3、F、PbOを含有しない、
(3)質量%で、SiO2 45〜70%、Al2O3 10〜22%、Li2O 0〜3%、Na2O 7〜20%、K2O 0〜5%を含有し、質量比(Al2O3+K2O)/Na2Oが0.5〜2であり、実質的にAs2O3、F、PbOを含有しない、
(4)質量%で、SiO2 45〜65%、Al2O3 10〜22%、Li2O 0〜3%、Na2O 7〜16%、K2O 0〜8%、MgO+CaO+SrO+BaO 0〜10%を含有し、質量比(Al2O3+K2O)/Na2Oが0.3〜1.8であり、実質的にAs2O3、F、PbOを含有しない、
(5)質量%で、SiO2 45〜65%、Al2O3 11〜22%、Li2O 0〜3%、Na2O 7〜16%、K2O 0〜5%、MgO 0〜3%、MgO+CaO+SrO+BaO 0〜9%を含有し、質量比(Al2O3+K2O)/Na2Oが1〜1.5であり、実質的にAs2O3、F、PbOを含有しない。
(6)質量%で、SiO2 50〜63%、Al2O3 11〜20%、Li2O 0〜2%、Na2O 8〜15.5%、K2O 0〜5%、MgO 0〜3%、MgO+CaO+SrO+BaO 0〜8%を含有し、質量比(Al2O3+K2O)/Na2Oが1〜1.5であり、実質的にAs2O3、F、PbOを含有しない、
(7)質量%で、SiO2 50〜63%、Al2O3 11〜20%、Li2O 0〜1%、Na2O 8〜15%、K2O 0.1〜5%、MgO 0〜2.5%、MgO+CaO+SrO+BaO 0〜6%を含有し、質量比(Al2O3+K2O)/Na2Oが1〜1.5であり、実質的にAs2O3、F、PbOを含有しない、が挙げられる。
Claims (10)
- (1)ガラス原料を調合し、ガラスバッチを得る工程と、(2)ガラスバッチを溶融し、得られた溶融ガラスを1.5mm以下のガラス基板に成形する工程と、(3)ガラス基板のおもて面と裏面に膜を形成する工程と、(4)おもて面と裏面に膜を有するガラス基板をイオン交換処理して、ガラス基板のおもて面、裏面及び端面に圧縮応力層を形成し、端面の応力深さが主表面の応力深さより大きい強化ガラス基板を得る工程と、(5)強化ガラス基板のおもて面と裏面の膜を除去する工程と、を有することを特徴とする強化ガラス基板の製造方法。
- 膜の厚みが5〜1000nmであることを特徴とする請求項1に記載の強化ガラス基板の製造方法。
- ガラス基板のおもて面と裏面が未研磨であることを特徴とする請求項1又は2に記載の強化ガラス基板の製造方法。
- 膜の厚みが5〜300nmであることを特徴とする請求項1〜3の何れかに記載の強化ガラス基板の製造方法。
- 膜の成分としてSiO2を含むことを特徴とする請求項1〜4の何れかに記載の強化ガラス基板の製造方法。
- 強化ガラス基板の内部引っ張り応力値が200MPa以下であることを特徴とする請求項1〜5の何れかに記載の強化ガラス基板の製造方法。
- 強化ガラス基板が、ガラス組成として、質量%で、SiO2 45〜75%、Al2O3 1〜30%、Na2O 0〜20%、K2O 0〜20%を含有することを特徴とする請求項1〜6に記載の強化ガラス基板の製造方法。
- エッチングにより、強化ガラス基板のおもて面と裏面の膜を除去することを特徴とする請求項1〜7に記載の強化ガラス基板の製造方法。
- 強化ガラス基板のおもて面と裏面の膜を完全に除去することを特徴とする請求項1〜8に記載の強化ガラス基板の製造方法。
- スパッタ法により、ガラス基板のおもて面と裏面に膜を形成することを特徴とする請求項1〜9に記載の強化ガラス基板の製造方法。
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