JP5898955B2 - プロセスキットリングへの制御されたｒｆ電力配分を有するプラズマリアクタ用ワークピースサポート - Google Patents

プロセスキットリングへの制御されたｒｆ電力配分を有するプラズマリアクタ用ワークピースサポート Download PDF

Info

Publication number
JP5898955B2
JP5898955B2 JP2011520089A JP2011520089A JP5898955B2 JP 5898955 B2 JP5898955 B2 JP 5898955B2 JP 2011520089 A JP2011520089 A JP 2011520089A JP 2011520089 A JP2011520089 A JP 2011520089A JP 5898955 B2 JP5898955 B2 JP 5898955B2
Authority
JP
Japan
Prior art keywords
process kit
workpiece
electrode
cathode
collar
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
JP2011520089A
Other languages
English (en)
Japanese (ja)
Other versions
JP2011529273A (ja
JP2011529273A5 (enExample
Inventor
ケネス エス コリンズ
ケネス エス コリンズ
ダグラス エー ジュニア ブッフバーガー
ダグラス エー ジュニア ブッフバーガー
カーティク ラマスワミィ
カーティク ラマスワミィ
シャヒド ラウフ
シャヒド ラウフ
広二 塙
広二 塙
ジェニファー ワイ サン
ジェニファー ワイ サン
アンドリュー ヌグエン
アンドリュー ヌグエン
トステン ビー リル
トステン ビー リル
メイファ シェン
メイファ シェン
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Applied Materials Inc
Original Assignee
Applied Materials Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Applied Materials Inc filed Critical Applied Materials Inc
Publication of JP2011529273A publication Critical patent/JP2011529273A/ja
Publication of JP2011529273A5 publication Critical patent/JP2011529273A5/ja
Application granted granted Critical
Publication of JP5898955B2 publication Critical patent/JP5898955B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32623—Mechanical discharge control means
    • H01J37/32642—Focus rings
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32174—Circuits specially adapted for controlling the RF discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32623—Mechanical discharge control means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/72—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using electrostatic chucks
    • H10P72/722—Details of electrostatic chucks
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/20—Positioning, supporting, modifying or maintaining the physical state of objects being observed or treated
    • H01J2237/2001—Maintaining constant desired temperature

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Drying Of Semiconductors (AREA)
  • Plasma Technology (AREA)
  • Chemical Vapour Deposition (AREA)
JP2011520089A 2008-07-23 2009-07-13 プロセスキットリングへの制御されたｒｆ電力配分を有するプラズマリアクタ用ワークピースサポート Active JP5898955B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US12/178,032 US20100018648A1 (en) 2008-07-23 2008-07-23 Workpiece support for a plasma reactor with controlled apportionment of rf power to a process kit ring
US12/178,032 2008-07-23
PCT/US2009/050403 WO2010011521A2 (en) 2008-07-23 2009-07-13 Workpiece support for a plasma reactor with controlled apportionment of rf power to a process kit ring

Publications (3)

Publication Number Publication Date
JP2011529273A JP2011529273A (ja) 2011-12-01
JP2011529273A5 JP2011529273A5 (enExample) 2012-08-30
JP5898955B2 true JP5898955B2 (ja) 2016-04-06

Family

ID=41567570

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2011520089A Active JP5898955B2 (ja) 2008-07-23 2009-07-13 プロセスキットリングへの制御されたｒｆ電力配分を有するプラズマリアクタ用ワークピースサポート

Country Status (7)

Country Link
US (1) US20100018648A1 (enExample)
JP (1) JP5898955B2 (enExample)
KR (1) KR101481377B1 (enExample)
CN (1) CN102106191B (enExample)
SG (1) SG192540A1 (enExample)
TW (1) TWI494028B (enExample)
WO (1) WO2010011521A2 (enExample)

Families Citing this family (167)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8734664B2 (en) 2008-07-23 2014-05-27 Applied Materials, Inc. Method of differential counter electrode tuning in an RF plasma reactor
US20140069584A1 (en) * 2008-07-23 2014-03-13 Applied Materials, Inc. Differential counter electrode tuning in a plasma reactor with an rf-driven ceiling electrode
US7977123B2 (en) * 2009-05-22 2011-07-12 Lam Research Corporation Arrangements and methods for improving bevel etch repeatability among substrates
US9299539B2 (en) * 2009-08-21 2016-03-29 Lam Research Corporation Method and apparatus for measuring wafer bias potential
CN103081088B (zh) * 2010-08-06 2016-04-06 应用材料公司 静电夹盘和使用静电夹盘的方法
US9123762B2 (en) 2010-10-22 2015-09-01 Applied Materials, Inc. Substrate support with symmetrical feed structure
JP5642531B2 (ja) * 2010-12-22 2014-12-17 東京エレクトロン株式会社 基板処理装置及び基板処理方法
KR101196422B1 (ko) * 2011-02-22 2012-11-01 엘아이지에이디피 주식회사 플라즈마 처리장치
JP6085079B2 (ja) * 2011-03-28 2017-02-22 東京エレクトロン株式会社 パターン形成方法、処理容器内の部材の温度制御方法、及び基板処理システム
US9966236B2 (en) * 2011-06-15 2018-05-08 Lam Research Corporation Powered grid for plasma chamber
US9117867B2 (en) * 2011-07-01 2015-08-25 Applied Materials, Inc. Electrostatic chuck assembly
US10224182B2 (en) * 2011-10-17 2019-03-05 Novellus Systems, Inc. Mechanical suppression of parasitic plasma in substrate processing chamber
US10586686B2 (en) 2011-11-22 2020-03-10 Law Research Corporation Peripheral RF feed and symmetric RF return for symmetric RF delivery
US9396908B2 (en) 2011-11-22 2016-07-19 Lam Research Corporation Systems and methods for controlling a plasma edge region
JP5905735B2 (ja) * 2012-02-21 2016-04-20 東京エレクトロン株式会社 基板処理装置、基板処理方法及び基板温度の設定可能帯域の変更方法
US10157729B2 (en) 2012-02-22 2018-12-18 Lam Research Corporation Soft pulsing
US9070536B2 (en) * 2012-04-24 2015-06-30 Applied Materials, Inc. Plasma reactor electrostatic chuck with cooled process ring and heated workpiece support surface
US9412579B2 (en) * 2012-04-26 2016-08-09 Applied Materials, Inc. Methods and apparatus for controlling substrate uniformity
US9948214B2 (en) * 2012-04-26 2018-04-17 Applied Materials, Inc. High temperature electrostatic chuck with real-time heat zone regulating capability
US9132436B2 (en) 2012-09-21 2015-09-15 Applied Materials, Inc. Chemical control features in wafer process equipment
JP6120527B2 (ja) * 2012-11-05 2017-04-26 東京エレクトロン株式会社 プラズマ処理方法
CN103887136B (zh) * 2012-12-20 2016-03-09 上海华虹宏力半导体制造有限公司 一种适用于金属干法刻蚀半导体设备的刻蚀腔室
JP6080571B2 (ja) * 2013-01-31 2017-02-15 東京エレクトロン株式会社 載置台及びプラズマ処理装置
US10256079B2 (en) 2013-02-08 2019-04-09 Applied Materials, Inc. Semiconductor processing systems having multiple plasma configurations
WO2014149258A1 (en) * 2013-03-15 2014-09-25 Applied Materials, Inc. Apparatus and method for tuning a plasma profile using a tuning electrode in a processing chamber
US10032608B2 (en) 2013-03-27 2018-07-24 Applied Materials, Inc. Apparatus and method for tuning electrode impedance for high frequency radio frequency and terminating low frequency radio frequency to ground
US10125422B2 (en) * 2013-03-27 2018-11-13 Applied Materials, Inc. High impedance RF filter for heater with impedance tuning device
CN104217914B (zh) * 2013-05-31 2016-12-28 中微半导体设备(上海)有限公司 等离子体处理装置
US9460894B2 (en) * 2013-06-28 2016-10-04 Lam Research Corporation Controlling ion energy within a plasma chamber
CN104347338A (zh) * 2013-08-01 2015-02-11 中微半导体设备(上海)有限公司 等离子体处理装置的冷却液处理系统及方法
US9754765B2 (en) * 2013-09-30 2017-09-05 Applied Materials, Inc. Electrodes for etch
JP2015162266A (ja) * 2014-02-26 2015-09-07 株式会社日立ハイテクノロジーズ プラズマ処理装置
US9472410B2 (en) * 2014-03-05 2016-10-18 Applied Materials, Inc. Pixelated capacitance controlled ESC
CN103887138B (zh) * 2014-03-31 2017-01-18 上海华力微电子有限公司 一种刻蚀设备的边缘环
KR102302723B1 (ko) 2014-07-23 2021-09-14 어플라이드 머티어리얼스, 인코포레이티드 튜닝가능한 온도 제어되는 기판 지지 어셈블리
JP2016046357A (ja) * 2014-08-22 2016-04-04 株式会社日立ハイテクノロジーズ プラズマ処理装置
JP6820832B2 (ja) * 2014-09-04 2021-01-27 コメット アーゲー Ｒｆ電力アプリケーションのための可変電力用コンデンサ
US9873180B2 (en) 2014-10-17 2018-01-23 Applied Materials, Inc. CMP pad construction with composite material properties using additive manufacturing processes
US9966240B2 (en) 2014-10-14 2018-05-08 Applied Materials, Inc. Systems and methods for internal surface conditioning assessment in plasma processing equipment
US9355922B2 (en) 2014-10-14 2016-05-31 Applied Materials, Inc. Systems and methods for internal surface conditioning in plasma processing equipment
US10875153B2 (en) 2014-10-17 2020-12-29 Applied Materials, Inc. Advanced polishing pad materials and formulations
US9776361B2 (en) 2014-10-17 2017-10-03 Applied Materials, Inc. Polishing articles and integrated system and methods for manufacturing chemical mechanical polishing articles
US11745302B2 (en) 2014-10-17 2023-09-05 Applied Materials, Inc. Methods and precursor formulations for forming advanced polishing pads by use of an additive manufacturing process
WO2016060712A1 (en) 2014-10-17 2016-04-21 Applied Materials, Inc. Cmp pad construction with composite material properties using additive manufacturing processes
US11637002B2 (en) 2014-11-26 2023-04-25 Applied Materials, Inc. Methods and systems to enhance process uniformity
US9865437B2 (en) * 2014-12-30 2018-01-09 Applied Materials, Inc. High conductance process kit
US20160225652A1 (en) * 2015-02-03 2016-08-04 Applied Materials, Inc. Low temperature chuck for plasma processing systems
JP6539113B2 (ja) * 2015-05-28 2019-07-03 株式会社日立ハイテクノロジーズ プラズマ処理装置およびプラズマ処理方法
US10153139B2 (en) * 2015-06-17 2018-12-11 Applied Materials, Inc. Multiple electrode substrate support assembly and phase control system
US10163610B2 (en) * 2015-07-13 2018-12-25 Lam Research Corporation Extreme edge sheath and wafer profile tuning through edge-localized ion trajectory control and plasma operation
US9673025B2 (en) * 2015-07-27 2017-06-06 Lam Research Corporation Electrostatic chuck including embedded faraday cage for RF delivery and associated methods for operation, monitoring, and control
US9691645B2 (en) 2015-08-06 2017-06-27 Applied Materials, Inc. Bolted wafer chuck thermal management systems and methods for wafer processing systems
US9741593B2 (en) 2015-08-06 2017-08-22 Applied Materials, Inc. Thermal management systems and methods for wafer processing systems
US10504700B2 (en) 2015-08-27 2019-12-10 Applied Materials, Inc. Plasma etching systems and methods with secondary plasma injection
US10879041B2 (en) 2015-09-04 2020-12-29 Applied Materials, Inc. Method and apparatus of achieving high input impedance without using ferrite materials for RF filter applications in plasma chambers
US10593574B2 (en) 2015-11-06 2020-03-17 Applied Materials, Inc. Techniques for combining CMP process tracking data with 3D printed CMP consumables
WO2017100136A1 (en) * 2015-12-07 2017-06-15 Applied Materials, Inc. Method and apparatus for clamping and declamping substrates using electrostatic chucks
US10391605B2 (en) 2016-01-19 2019-08-27 Applied Materials, Inc. Method and apparatus for forming porous advanced polishing pads using an additive manufacturing process
US10685862B2 (en) 2016-01-22 2020-06-16 Applied Materials, Inc. Controlling the RF amplitude of an edge ring of a capacitively coupled plasma process device
US11837479B2 (en) * 2016-05-05 2023-12-05 Applied Materials, Inc. Advanced temperature control for wafer carrier in plasma processing chamber
US10504754B2 (en) 2016-05-19 2019-12-10 Applied Materials, Inc. Systems and methods for improved semiconductor etching and component protection
US11532497B2 (en) * 2016-06-07 2022-12-20 Applied Materials, Inc. High power electrostatic chuck design with radio frequency coupling
KR101813497B1 (ko) 2016-06-24 2018-01-02 (주)제이하라 플라즈마 발생장치
US9865484B1 (en) 2016-06-29 2018-01-09 Applied Materials, Inc. Selective etch using material modification and RF pulsing
CN107768299A (zh) * 2016-08-16 2018-03-06 北京北方华创微电子装备有限公司 承载装置及半导体加工设备
US10629473B2 (en) 2016-09-09 2020-04-21 Applied Materials, Inc. Footing removal for nitride spacer
US10665433B2 (en) * 2016-09-19 2020-05-26 Varian Semiconductor Equipment Associates, Inc. Extreme edge uniformity control
US10546729B2 (en) 2016-10-04 2020-01-28 Applied Materials, Inc. Dual-channel showerhead with improved profile
US10163696B2 (en) 2016-11-11 2018-12-25 Applied Materials, Inc. Selective cobalt removal for bottom up gapfill
US10026621B2 (en) 2016-11-14 2018-07-17 Applied Materials, Inc. SiN spacer profile patterning
JP6698502B2 (ja) * 2016-11-21 2020-05-27 東京エレクトロン株式会社 載置台及びプラズマ処理装置
US10431429B2 (en) 2017-02-03 2019-10-01 Applied Materials, Inc. Systems and methods for radial and azimuthal control of plasma uniformity
US10395896B2 (en) * 2017-03-03 2019-08-27 Applied Materials, Inc. Method and apparatus for ion energy distribution manipulation for plasma processing chambers that allows ion energy boosting through amplitude modulation
US10943834B2 (en) 2017-03-13 2021-03-09 Applied Materials, Inc. Replacement contact process
WO2018194807A1 (en) * 2017-04-21 2018-10-25 Applied Materials, Inc. Improved electrode assembly
US11276590B2 (en) 2017-05-17 2022-03-15 Applied Materials, Inc. Multi-zone semiconductor substrate supports
US11276559B2 (en) 2017-05-17 2022-03-15 Applied Materials, Inc. Semiconductor processing chamber for multiple precursor flow
JP7176860B6 (ja) 2017-05-17 2022-12-16 アプライド マテリアルズ インコーポレイテッド 前駆体の流れを改善する半導体処理チャンバ
US10920320B2 (en) 2017-06-16 2021-02-16 Applied Materials, Inc. Plasma health determination in semiconductor substrate processing reactors
US10727080B2 (en) 2017-07-07 2020-07-28 Applied Materials, Inc. Tantalum-containing material removal
JP6865128B2 (ja) * 2017-07-19 2021-04-28 東京エレクトロン株式会社 プラズマ処理装置
US11471999B2 (en) 2017-07-26 2022-10-18 Applied Materials, Inc. Integrated abrasive polishing pads and manufacturing methods
US10297458B2 (en) 2017-08-07 2019-05-21 Applied Materials, Inc. Process window widening using coated parts in plasma etch processes
US10763150B2 (en) * 2017-09-20 2020-09-01 Applied Materials, Inc. System for coupling a voltage to spatially segmented portions of the wafer with variable voltage
JP6703508B2 (ja) * 2017-09-20 2020-06-03 株式会社日立ハイテク プラズマ処理装置及びプラズマ処理方法
US10510575B2 (en) 2017-09-20 2019-12-17 Applied Materials, Inc. Substrate support with multiple embedded electrodes
US10732615B2 (en) * 2017-10-30 2020-08-04 Varian Semiconductor Equipment Associates, Inc. System and method for minimizing backside workpiece damage
TWI872423B (zh) * 2017-11-17 2025-02-11 新加坡商Aes 全球公司 用於在空間域和時間域上控制基板上的電漿處理之系統和方法，及相關的電腦可讀取媒體
US10903054B2 (en) 2017-12-19 2021-01-26 Applied Materials, Inc. Multi-zone gas distribution systems and methods
US11328909B2 (en) 2017-12-22 2022-05-10 Applied Materials, Inc. Chamber conditioning and removal processes
US10854426B2 (en) 2018-01-08 2020-12-01 Applied Materials, Inc. Metal recess for semiconductor structures
US10679870B2 (en) 2018-02-15 2020-06-09 Applied Materials, Inc. Semiconductor processing chamber multistage mixing apparatus
US10964512B2 (en) 2018-02-15 2021-03-30 Applied Materials, Inc. Semiconductor processing chamber multistage mixing apparatus and methods
TWI716818B (zh) 2018-02-28 2021-01-21 美商應用材料股份有限公司 形成氣隙的系統及方法
US10593560B2 (en) 2018-03-01 2020-03-17 Applied Materials, Inc. Magnetic induction plasma source for semiconductor processes and equipment
US10319600B1 (en) 2018-03-12 2019-06-11 Applied Materials, Inc. Thermal silicon etch
US10699879B2 (en) 2018-04-17 2020-06-30 Applied Materials, Inc. Two piece electrode assembly with gap for plasma control
US10886137B2 (en) 2018-04-30 2021-01-05 Applied Materials, Inc. Selective nitride removal
US10555412B2 (en) 2018-05-10 2020-02-04 Applied Materials, Inc. Method of controlling ion energy distribution using a pulse generator with a current-return output stage
SG11202010268QA (en) * 2018-06-08 2020-12-30 Applied Materials Inc Apparatus for suppressing parasitic plasma in plasma enhanced chemical vapor deposition chamber
US10872778B2 (en) 2018-07-06 2020-12-22 Applied Materials, Inc. Systems and methods utilizing solid-phase etchants
US10755941B2 (en) 2018-07-06 2020-08-25 Applied Materials, Inc. Self-limiting selective etching systems and methods
US10672642B2 (en) 2018-07-24 2020-06-02 Applied Materials, Inc. Systems and methods for pedestal configuration
US11183368B2 (en) 2018-08-02 2021-11-23 Lam Research Corporation RF tuning systems including tuning circuits having impedances for setting and adjusting parameters of electrodes in electrostatic chucks
WO2020036801A1 (en) 2018-08-17 2020-02-20 Lam Research Corporation Rf power compensation to reduce deposition or etch rate changes in response to substrate bulk resistivity variations
CN112654655A (zh) 2018-09-04 2021-04-13 应用材料公司 先进抛光垫配方
US11049755B2 (en) * 2018-09-14 2021-06-29 Applied Materials, Inc. Semiconductor substrate supports with embedded RF shield
US10892198B2 (en) 2018-09-14 2021-01-12 Applied Materials, Inc. Systems and methods for improved performance in semiconductor processing
US11062887B2 (en) 2018-09-17 2021-07-13 Applied Materials, Inc. High temperature RF heater pedestals
US11417534B2 (en) 2018-09-21 2022-08-16 Applied Materials, Inc. Selective material removal
US11682560B2 (en) 2018-10-11 2023-06-20 Applied Materials, Inc. Systems and methods for hafnium-containing film removal
US11121002B2 (en) 2018-10-24 2021-09-14 Applied Materials, Inc. Systems and methods for etching metals and metal derivatives
US11476145B2 (en) 2018-11-20 2022-10-18 Applied Materials, Inc. Automatic ESC bias compensation when using pulsed DC bias
US11437242B2 (en) 2018-11-27 2022-09-06 Applied Materials, Inc. Selective removal of silicon-containing materials
JP7541005B2 (ja) * 2018-12-03 2024-08-27 アプライド マテリアルズ インコーポレイテッド チャックとアーク放電に関する性能が改良された静電チャック設計
US11562890B2 (en) * 2018-12-06 2023-01-24 Applied Materials, Inc. Corrosion resistant ground shield of processing chamber
US11640917B2 (en) 2018-12-07 2023-05-02 Applied Materials, Inc. Ground electrode formed in an electrostatic chuck for a plasma processing chamber
US11562887B2 (en) * 2018-12-10 2023-01-24 Tokyo Electron Limited Plasma processing apparatus and etching method
JP7349329B2 (ja) * 2018-12-10 2023-09-22 東京エレクトロン株式会社 プラズマ処理装置及びエッチング方法
US11721527B2 (en) 2019-01-07 2023-08-08 Applied Materials, Inc. Processing chamber mixing systems
US10920319B2 (en) 2019-01-11 2021-02-16 Applied Materials, Inc. Ceramic showerheads with conductive electrodes
KR20250100790A (ko) 2019-01-22 2025-07-03 어플라이드 머티어리얼스, 인코포레이티드 펄스 전압 파형을 제어하기 위한 피드백 루프
US11508554B2 (en) 2019-01-24 2022-11-22 Applied Materials, Inc. High voltage filter assembly
US10784089B2 (en) 2019-02-01 2020-09-22 Applied Materials, Inc. Temperature and bias control of edge ring
US11367645B2 (en) 2019-03-13 2022-06-21 Applied Materials, Inc. Temperature tunable multi-zone electrostatic chuck
JP7271330B2 (ja) * 2019-06-18 2023-05-11 東京エレクトロン株式会社 載置台及びプラズマ処理装置
KR102214333B1 (ko) 2019-06-27 2021-02-10 세메스 주식회사 기판 처리 장치 및 기판 처리 방법
US11894255B2 (en) * 2019-07-30 2024-02-06 Applied Materials, Inc. Sheath and temperature control of process kit
JP7370228B2 (ja) * 2019-11-22 2023-10-27 東京エレクトロン株式会社 プラズマ処理装置
US11646183B2 (en) * 2020-03-20 2023-05-09 Applied Materials, Inc. Substrate support assembly with arc resistant coolant conduit
JP7450427B2 (ja) 2020-03-25 2024-03-15 東京エレクトロン株式会社 基板支持器及びプラズマ処理装置
JP7442365B2 (ja) * 2020-03-27 2024-03-04 東京エレクトロン株式会社 基板処理装置、基板処理システム、基板処理装置の制御方法および基板処理システムの制御方法
US11450546B2 (en) * 2020-04-09 2022-09-20 Applied Materials, Inc. Semiconductor substrate support with internal channels
KR102890592B1 (ko) * 2020-06-26 2025-11-26 도쿄엘렉트론가부시키가이샤 플라즈마 처리 장치
US11615966B2 (en) 2020-07-19 2023-03-28 Applied Materials, Inc. Flowable film formation and treatments
US11848176B2 (en) 2020-07-31 2023-12-19 Applied Materials, Inc. Plasma processing using pulsed-voltage and radio-frequency power
US11887811B2 (en) 2020-09-08 2024-01-30 Applied Materials, Inc. Semiconductor processing chambers for deposition and etch
US11699571B2 (en) 2020-09-08 2023-07-11 Applied Materials, Inc. Semiconductor processing chambers for deposition and etch
US12142459B2 (en) 2020-09-08 2024-11-12 Applied Materials, Inc. Single chamber flowable film formation and treatments
US11901157B2 (en) 2020-11-16 2024-02-13 Applied Materials, Inc. Apparatus and methods for controlling ion energy distribution
US11798790B2 (en) 2020-11-16 2023-10-24 Applied Materials, Inc. Apparatus and methods for controlling ion energy distribution
KR102592414B1 (ko) * 2020-11-23 2023-10-20 세메스 주식회사 전극 제어 유닛을 구비하는 기판 처리 장치
CN114566415A (zh) * 2020-11-27 2022-05-31 中微半导体设备(上海)股份有限公司 等离子体处理装置
JP7071008B2 (ja) * 2020-12-04 2022-05-18 株式会社日立ハイテク プラズマ処理装置およびプラズマ処理方法
CN114664622B (zh) * 2020-12-23 2024-07-05 中微半导体设备(上海)股份有限公司 一种等离子体处理装置及调节方法
US11495470B1 (en) 2021-04-16 2022-11-08 Applied Materials, Inc. Method of enhancing etching selectivity using a pulsed plasma
US11791138B2 (en) 2021-05-12 2023-10-17 Applied Materials, Inc. Automatic electrostatic chuck bias compensation during plasma processing
US11948780B2 (en) 2021-05-12 2024-04-02 Applied Materials, Inc. Automatic electrostatic chuck bias compensation during plasma processing
US11967483B2 (en) 2021-06-02 2024-04-23 Applied Materials, Inc. Plasma excitation with ion energy control
US12394596B2 (en) 2021-06-09 2025-08-19 Applied Materials, Inc. Plasma uniformity control in pulsed DC plasma chamber
US12525441B2 (en) 2021-06-09 2026-01-13 Applied Materials, Inc. Plasma chamber and chamber component cleaning methods
US20220399186A1 (en) 2021-06-09 2022-12-15 Applied Materials, Inc. Method and apparatus to reduce feature charging in plasma processing chamber
US11810760B2 (en) 2021-06-16 2023-11-07 Applied Materials, Inc. Apparatus and method of ion current compensation
US11569066B2 (en) 2021-06-23 2023-01-31 Applied Materials, Inc. Pulsed voltage source for plasma processing applications
US11776788B2 (en) 2021-06-28 2023-10-03 Applied Materials, Inc. Pulsed voltage boost for substrate processing
US11476090B1 (en) 2021-08-24 2022-10-18 Applied Materials, Inc. Voltage pulse time-domain multiplexing
US12106938B2 (en) 2021-09-14 2024-10-01 Applied Materials, Inc. Distortion current mitigation in a radio frequency plasma processing chamber
US11694876B2 (en) 2021-12-08 2023-07-04 Applied Materials, Inc. Apparatus and method for delivering a plurality of waveform signals during plasma processing
US11972924B2 (en) 2022-06-08 2024-04-30 Applied Materials, Inc. Pulsed voltage source for plasma processing applications
US12315732B2 (en) 2022-06-10 2025-05-27 Applied Materials, Inc. Method and apparatus for etching a semiconductor substrate in a plasma etch chamber
KR102757922B1 (ko) * 2022-07-29 2025-01-21 세메스 주식회사 기판 지지 장치 및 이를 포함하는 기판 처리 장치
US12586768B2 (en) 2022-08-10 2026-03-24 Applied Materials, Inc. Pulsed voltage compensation for plasma processing applications
US12695058B2 (en) * 2022-08-10 2026-07-28 Mks Inc. Plasma process control of multi-electrode systems equipped with ion energy sensors
US12272524B2 (en) 2022-09-19 2025-04-08 Applied Materials, Inc. Wideband variable impedance load for high volume manufacturing qualification and on-site diagnostics
US12111341B2 (en) 2022-10-05 2024-10-08 Applied Materials, Inc. In-situ electric field detection method and apparatus
JP2024166825A (ja) * 2023-05-19 2024-11-29 東京エレクトロン株式会社 プラズマ処理装置
US12683123B2 (en) 2023-12-11 2026-07-14 Applied Materials, Inc. Pulsed voltage waveform biasing of plasma

Family Cites Families (27)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3763031A (en) * 1970-10-01 1973-10-02 Cogar Corp Rf sputtering apparatus
US5668524A (en) * 1994-02-09 1997-09-16 Kyocera Corporation Ceramic resistor and electrostatic chuck having an aluminum nitride crystal phase
US5486975A (en) * 1994-01-31 1996-01-23 Applied Materials, Inc. Corrosion resistant electrostatic chuck
JP3191139B2 (ja) * 1994-12-14 2001-07-23 株式会社日立製作所 試料保持装置
JPH11144894A (ja) * 1997-08-29 1999-05-28 Matsushita Electric Ind Co Ltd プラズマ処理方法及び装置
KR100292410B1 (ko) * 1998-09-23 2001-06-01 윤종용 불순물 오염이 억제된 반도체 제조용 반응 챔버
US6563076B1 (en) * 1999-09-30 2003-05-13 Lam Research Corporation Voltage control sensor and control interface for radio frequency power regulation in a plasma reactor
US6521292B1 (en) * 2000-08-04 2003-02-18 Applied Materials, Inc. Substrate support including purge ring having inner edge aligned to wafer edge
TW506234B (en) * 2000-09-18 2002-10-11 Tokyo Electron Ltd Tunable focus ring for plasma processing
US6630201B2 (en) * 2001-04-05 2003-10-07 Angstron Systems, Inc. Adsorption process for atomic layer deposition
JP4819244B2 (ja) * 2001-05-15 2011-11-24 東京エレクトロン株式会社 プラズマ処理装置
JP2003258074A (ja) * 2002-03-07 2003-09-12 Hitachi High-Technologies Corp 高周波電源及び半導体製造装置
JP2004022822A (ja) * 2002-06-17 2004-01-22 Shibaura Mechatronics Corp プラズマ処理方法および装置
CN100418187C (zh) * 2003-02-07 2008-09-10 东京毅力科创株式会社 等离子体处理装置、环形部件和等离子体处理方法
WO2004082007A1 (ja) * 2003-03-12 2004-09-23 Tokyo Electron Limited 半導体処理用の基板保持構造及びプラズマ処理装置
JP4219734B2 (ja) * 2003-05-19 2009-02-04 東京エレクトロン株式会社 基板保持機構およびプラズマ処理装置
US20040261946A1 (en) * 2003-04-24 2004-12-30 Tokyo Electron Limited Plasma processing apparatus, focus ring, and susceptor
JP4504061B2 (ja) * 2004-03-29 2010-07-14 東京エレクトロン株式会社 プラズマ処理方法
WO2006050632A2 (en) * 2004-11-12 2006-05-18 Oc Oerlikon Balzers Ag Impedance matching of a capacitively coupled rf plasma reactor suitable for large area substrates
US20070283891A1 (en) * 2006-03-29 2007-12-13 Nobuyuki Okayama Table for supporting substrate, and vacuum-processing equipment
JP4935143B2 (ja) * 2006-03-29 2012-05-23 東京エレクトロン株式会社 載置台及び真空処理装置
JP5254533B2 (ja) * 2006-03-31 2013-08-07 東京エレクトロン株式会社 プラズマ処理装置と方法
JP2008053496A (ja) * 2006-08-25 2008-03-06 Sumitomo Precision Prod Co Ltd エッチング装置
JP4992389B2 (ja) * 2006-11-06 2012-08-08 東京エレクトロン株式会社 載置装置、プラズマ処理装置及びプラズマ処理方法
JP4754469B2 (ja) * 2006-12-15 2011-08-24 東京エレクトロン株式会社 基板載置台の製造方法
JP2009187673A (ja) * 2008-02-01 2009-08-20 Nec Electronics Corp プラズマ処理装置及び方法
JP5294669B2 (ja) * 2008-03-25 2013-09-18 東京エレクトロン株式会社 プラズマ処理装置

Also Published As

Publication number Publication date
US20100018648A1 (en) 2010-01-28
KR20110041541A (ko) 2011-04-21
JP2011529273A (ja) 2011-12-01
WO2010011521A3 (en) 2010-04-22
CN102106191B (zh) 2014-01-22
SG192540A1 (en) 2013-08-30
WO2010011521A2 (en) 2010-01-28
TW201031280A (en) 2010-08-16
KR101481377B1 (ko) 2015-01-12
TWI494028B (zh) 2015-07-21
CN102106191A (zh) 2011-06-22

Similar Documents

Publication Publication Date Title
KR101481377B1 (ko) 프로세스 키트 링으로의 ｒｆ 전력의 할당이 제어되는 플라즈마 반응기를 위한 워크피스 지지체
US8734664B2 (en) Method of differential counter electrode tuning in an RF plasma reactor
US20140034239A1 (en) Differential counter electrode tuning in a plasma reactor with an rf-driven workpiece support electrode
US20140069584A1 (en) Differential counter electrode tuning in a plasma reactor with an rf-driven ceiling electrode
TWI771541B (zh) 具有低頻射頻功率分佈調節功能的等離子反應器
US20210296144A1 (en) Substrate support pedestal having plasma confinement features
TWI574345B (zh) 靜電夾盤
TWI713078B (zh) 用於控制電容耦合電漿製程設備之邊緣環的射頻振幅的基板支撐件及處理腔室
US10163610B2 (en) Extreme edge sheath and wafer profile tuning through edge-localized ion trajectory control and plasma operation
KR101083624B1 (ko) 균일성 제어를 위한 분할형 무선 주파수 전극 장치 및 방법
US6887340B2 (en) Etch rate uniformity
US20040040664A1 (en) Cathode pedestal for a plasma etch reactor
KR102256216B1 (ko) 플라즈마 처리 장치 및 플라즈마 제어 방법
CN104205299A (zh) 用于控制基板均匀度的方法及设备
KR20160006239A (ko) 진보된 rf 및 온도 균일성을 갖는 정전 척
JP2019054274A (ja) 環状のバッフル
CN104115260A (zh) 具有冷却工艺环与加热工作件支撑表面的等离子体反应器静电夹盘
KR20200067104A (ko) 플라즈마 처리 장치 및 플라즈마 처리 방법
JP2005520337A (ja) プラズマ処理のための改良された基板ホルダ
WO2023034436A1 (en) Replaceable electrostatic chuck outer ring for edge arcing mitigation
US20220068615A1 (en) Stage and plasma processing apparatus
US20040163595A1 (en) Plasma processing apparatus
CN114975056B (zh) 用于清洁等离子体加工设备的聚焦环的导电构件
TW202514902A (zh) 用於改良熱性能與漏電流穩定性之具有混成圓盤的靜電吸盤

Legal Events

Date Code Title Description
A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20120713

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20120713

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20130725

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20130806

A601 Written request for extension of time

Free format text: JAPANESE INTERMEDIATE CODE: A601

Effective date: 20131105

A602 Written permission of extension of time

Free format text: JAPANESE INTERMEDIATE CODE: A602

Effective date: 20131112

A601 Written request for extension of time

Free format text: JAPANESE INTERMEDIATE CODE: A601

Effective date: 20131206

A602 Written permission of extension of time

Free format text: JAPANESE INTERMEDIATE CODE: A602

Effective date: 20131213

A601 Written request for extension of time

Free format text: JAPANESE INTERMEDIATE CODE: A601

Effective date: 20140104

A602 Written permission of extension of time

Free format text: JAPANESE INTERMEDIATE CODE: A602

Effective date: 20140114

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20140206

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20140327

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20140520

A601 Written request for extension of time

Free format text: JAPANESE INTERMEDIATE CODE: A601

Effective date: 20140820

A602 Written permission of extension of time

Free format text: JAPANESE INTERMEDIATE CODE: A602

Effective date: 20140827

A601 Written request for extension of time

Free format text: JAPANESE INTERMEDIATE CODE: A601

Effective date: 20140918

A602 Written permission of extension of time

Free format text: JAPANESE INTERMEDIATE CODE: A602

Effective date: 20140926

A601 Written request for extension of time

Free format text: JAPANESE INTERMEDIATE CODE: A601

Effective date: 20141016

A602 Written permission of extension of time

Free format text: JAPANESE INTERMEDIATE CODE: A602

Effective date: 20141023

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20141119

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20150519

A601 Written request for extension of time

Free format text: JAPANESE INTERMEDIATE CODE: A601

Effective date: 20150817

A601 Written request for extension of time

Free format text: JAPANESE INTERMEDIATE CODE: A601

Effective date: 20150916

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20151005

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20160209

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20160307

R150 Certificate of patent or registration of utility model

Ref document number: 5898955

Country of ref document: JP

Free format text: JAPANESE INTERMEDIATE CODE: R150

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250