JP5891366B2 - 透明導電膜の製造方法および太陽電池の製造方法 - Google Patents
透明導電膜の製造方法および太陽電池の製造方法 Download PDFInfo
- Publication number
- JP5891366B2 JP5891366B2 JP2013505877A JP2013505877A JP5891366B2 JP 5891366 B2 JP5891366 B2 JP 5891366B2 JP 2013505877 A JP2013505877 A JP 2013505877A JP 2013505877 A JP2013505877 A JP 2013505877A JP 5891366 B2 JP5891366 B2 JP 5891366B2
- Authority
- JP
- Japan
- Prior art keywords
- transparent conductive
- conductive film
- substrate
- metal plate
- film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 238000004519 manufacturing process Methods 0.000 title claims description 15
- 239000000758 substrate Substances 0.000 claims description 50
- 238000012986 modification Methods 0.000 claims description 38
- 230000004048 modification Effects 0.000 claims description 38
- 229910052751 metal Inorganic materials 0.000 claims description 25
- 239000002184 metal Substances 0.000 claims description 25
- 229910021417 amorphous silicon Inorganic materials 0.000 claims description 18
- 239000000463 material Substances 0.000 claims description 17
- 238000000034 method Methods 0.000 claims description 13
- 229910021419 crystalline silicon Inorganic materials 0.000 claims description 10
- 239000004065 semiconductor Substances 0.000 claims description 7
- 238000002407 reforming Methods 0.000 claims description 3
- 229910003437 indium oxide Inorganic materials 0.000 description 16
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 description 16
- 230000015572 biosynthetic process Effects 0.000 description 10
- 238000010438 heat treatment Methods 0.000 description 9
- 239000002994 raw material Substances 0.000 description 7
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 6
- 239000013078 crystal Substances 0.000 description 6
- 239000002019 doping agent Substances 0.000 description 5
- 239000012535 impurity Substances 0.000 description 5
- 238000004544 sputter deposition Methods 0.000 description 4
- 238000012360 testing method Methods 0.000 description 4
- 230000001678 irradiating effect Effects 0.000 description 3
- 239000011787 zinc oxide Substances 0.000 description 3
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical group [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 238000010894 electron beam technology Methods 0.000 description 2
- 230000006698 induction Effects 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 2
- 229910052718 tin Inorganic materials 0.000 description 2
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 2
- 229910001887 tin oxide Inorganic materials 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- 229910052684 Cerium Inorganic materials 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- DGAQECJNVWCQMB-PUAWFVPOSA-M Ilexoside XXIX Chemical compound C[C@@H]1CC[C@@]2(CC[C@@]3(C(=CC[C@H]4[C@]3(CC[C@@H]5[C@@]4(CC[C@@H](C5(C)C)OS(=O)(=O)[O-])C)C)[C@@H]2[C@]1(C)O)C)C(=O)O[C@H]6[C@@H]([C@H]([C@@H]([C@H](O6)CO)O)O)O.[Na+] DGAQECJNVWCQMB-PUAWFVPOSA-M 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- QCWXUUIWCKQGHC-UHFFFAOYSA-N Zirconium Chemical compound [Zr] QCWXUUIWCKQGHC-UHFFFAOYSA-N 0.000 description 1
- 230000004913 activation Effects 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical group [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052787 antimony Inorganic materials 0.000 description 1
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- GWXLDORMOJMVQZ-UHFFFAOYSA-N cerium Chemical compound [Ce] GWXLDORMOJMVQZ-UHFFFAOYSA-N 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 229910052731 fluorine Inorganic materials 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- 125000001153 fluoro group Chemical group F* 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 229910052735 hafnium Inorganic materials 0.000 description 1
- VBJZVLUMGGDVMO-UHFFFAOYSA-N hafnium atom Chemical compound [Hf] VBJZVLUMGGDVMO-UHFFFAOYSA-N 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 238000007733 ion plating Methods 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 229910021423 nanocrystalline silicon Inorganic materials 0.000 description 1
- 229910052758 niobium Inorganic materials 0.000 description 1
- 239000010955 niobium Substances 0.000 description 1
- GUCVJGMIXFAOAE-UHFFFAOYSA-N niobium atom Chemical compound [Nb] GUCVJGMIXFAOAE-UHFFFAOYSA-N 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 229910052708 sodium Inorganic materials 0.000 description 1
- 239000011734 sodium Substances 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- 238000001771 vacuum deposition Methods 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- 229910052726 zirconium Inorganic materials 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022466—Electrodes made of transparent conductive layers, e.g. TCO, ITO layers
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/0015—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterized by the colour of the layer
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/14—Metallic material, boron or silicon
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/24—Vacuum evaporation
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/56—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/58—After-treatment
- C23C14/5806—Thermal treatment
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
- H01L31/072—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type
- H01L31/0745—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type comprising a AIVBIV heterojunction, e.g. Si/Ge, SiGe/Si or Si/SiC solar cells
- H01L31/0747—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type comprising a AIVBIV heterojunction, e.g. Si/Ge, SiGe/Si or Si/SiC solar cells comprising a heterojunction of crystalline and amorphous materials, e.g. heterojunction with intrinsic thin layer
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1884—Manufacture of transparent electrodes, e.g. TCO, ITO
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Organic Chemistry (AREA)
- Metallurgy (AREA)
- Mechanical Engineering (AREA)
- Materials Engineering (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Electromagnetism (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Life Sciences & Earth Sciences (AREA)
- Sustainable Energy (AREA)
- Manufacturing & Machinery (AREA)
- Thermal Sciences (AREA)
- Photovoltaic Devices (AREA)
- Physical Vapour Deposition (AREA)
- Manufacturing Of Electric Cables (AREA)
Description
10 真空容器
11 材料源
2 基板
20 結晶系シリコン基板
3 透明導電膜
4 表面改質装置
40 金属板
Claims (6)
- 真空容器内で基板上に透明導電膜を成膜する透明導電膜の製造方法であって、
真空容器内において、透明導電膜が成膜された基板に近接する位置に、金属板を有し前記透明導電膜の改質処理を行う表面改質装置が配されており、
基板上に透明導電膜を成膜した後に、
大気に曝すことなく、透明導電膜材料の材料源からの輻射熱により加熱された前記金属板からの電磁波によって前記透明導電膜の改質処理を行う、
透明導電膜の製造方法。 - 前記基板は、非晶質シリコン膜を含んだ半導体接合を有し、非晶質シリコン上に前記透明導電膜が成膜される、請求項1に記載の透明導電膜の製造方法。
- 前記表面改質装置は、前記非晶質シリコン膜が吸収しない波長領域の電磁波を放射する、請求項2に記載の透明導電膜の製造方法。
- 前記金属板が160℃以上400℃以下に加熱される、請求項3に記載の透明導電膜の製造方法。
- 基板上に透明導電膜が形成された太陽電池の製造方法であって、
真空容器内において、透明導電膜が成膜された基板に近接する位置に、金属板を有し前記透明導電膜の改質処理を行う表面改質装置が配されており、
基板上に透明導電膜を成膜した後に、
大気に曝すことなく、透明導電膜材料の材料源からの輻射熱により加熱された前記金属板からの電磁波によって前記透明導電膜の改質処理を行う、
太陽電池の製造方法。 - 前記基板は、結晶シリコン基板の一方の主面上に前記結晶シリコンと同じ極性の非晶質シリコン層が積層されており、他方の主面上に前記結晶シリコンと異なる極性の非晶質シリコン層が積層されている構成からなる、
請求項5に記載の太陽電池の製造方法。
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2013505877A JP5891366B2 (ja) | 2011-03-24 | 2012-03-08 | 透明導電膜の製造方法および太陽電池の製造方法 |
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2011066720 | 2011-03-24 | ||
JP2011066720 | 2011-03-24 | ||
PCT/JP2012/055906 WO2012128051A1 (ja) | 2011-03-24 | 2012-03-08 | 透明導電膜の製造方法および太陽電池の製造方法 |
JP2013505877A JP5891366B2 (ja) | 2011-03-24 | 2012-03-08 | 透明導電膜の製造方法および太陽電池の製造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JPWO2012128051A1 JPWO2012128051A1 (ja) | 2014-07-24 |
JP5891366B2 true JP5891366B2 (ja) | 2016-03-23 |
Family
ID=46879205
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2013505877A Expired - Fee Related JP5891366B2 (ja) | 2011-03-24 | 2012-03-08 | 透明導電膜の製造方法および太陽電池の製造方法 |
Country Status (4)
Country | Link |
---|---|
US (1) | US8835196B2 (ja) |
JP (1) | JP5891366B2 (ja) |
TW (1) | TW201251063A (ja) |
WO (1) | WO2012128051A1 (ja) |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN104060236B (zh) * | 2014-05-14 | 2016-07-06 | 中国科学院广州能源研究所 | 一种片状基片的连续镀膜生产系统 |
JP2016072392A (ja) * | 2014-09-29 | 2016-05-09 | パナソニックIpマネジメント株式会社 | 太陽電池の製造方法 |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH10233367A (ja) * | 1996-12-17 | 1998-09-02 | Canon Inc | 非単結晶半導体薄膜の形成装置、非単結晶半導体薄膜の形成方法、及び光起電力素子の製造方法 |
JP2006286308A (ja) * | 2005-03-31 | 2006-10-19 | Toppan Printing Co Ltd | 透明導電膜積層体およびその製造方法 |
JP2008521662A (ja) * | 2004-12-03 | 2008-06-26 | プレスコ テクノロジー インコーポレーテッド | 波長特異的な熱放射及び処理を行う方法及びシステム |
JP2008202066A (ja) * | 2007-02-16 | 2008-09-04 | Mitsubishi Heavy Ind Ltd | 真空処理装置 |
JP2008270572A (ja) * | 2007-04-20 | 2008-11-06 | Sanyo Electric Co Ltd | 光起電力素子の製造方法 |
Family Cites Families (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS52107596A (en) * | 1973-06-12 | 1977-09-09 | Toray Industries | Method of manufacturing transparent electrode |
JP3265399B2 (ja) * | 1992-02-27 | 2002-03-11 | 株式会社アルバック | シリコン酸化膜と透明導電膜の連続形成方法 |
US6159300A (en) * | 1996-12-17 | 2000-12-12 | Canon Kabushiki Kaisha | Apparatus for forming non-single-crystal semiconductor thin film, method for forming non-single-crystal semiconductor thin film, and method for producing photovoltaic device |
JPH10214682A (ja) * | 1997-01-30 | 1998-08-11 | Mitsubishi Chem Corp | 有機電界発光素子の製造装置及び製造方法 |
US6576061B1 (en) * | 1998-12-22 | 2003-06-10 | Canon Kabushiki Kaisha | Apparatus and method for processing a substrate |
JP2001033939A (ja) * | 1999-05-19 | 2001-02-09 | Semiconductor Leading Edge Technologies Inc | マスクブランク若しくはマスクとそれらの製造方法およびそのマスクを用いた露光方法 |
JP2001053308A (ja) * | 1999-08-05 | 2001-02-23 | Nippon Sheet Glass Co Ltd | 導電膜の製造方法 |
JP4705340B2 (ja) | 2004-06-14 | 2011-06-22 | 日本曹達株式会社 | 酸化インジウム膜の製造方法 |
JP4656926B2 (ja) * | 2004-12-09 | 2011-03-23 | セントラル硝子株式会社 | Ito透明導電膜の成膜方法およびito透明導電膜付き基板 |
US20120213949A1 (en) * | 2011-02-18 | 2012-08-23 | Chien-Min Weng | Method for producing indium tin oxide layer with controlled surface resistance |
-
2012
- 2012-03-08 WO PCT/JP2012/055906 patent/WO2012128051A1/ja active Application Filing
- 2012-03-08 JP JP2013505877A patent/JP5891366B2/ja not_active Expired - Fee Related
- 2012-03-20 TW TW101109453A patent/TW201251063A/zh unknown
-
2013
- 2013-09-17 US US14/029,045 patent/US8835196B2/en active Active
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH10233367A (ja) * | 1996-12-17 | 1998-09-02 | Canon Inc | 非単結晶半導体薄膜の形成装置、非単結晶半導体薄膜の形成方法、及び光起電力素子の製造方法 |
JP2008521662A (ja) * | 2004-12-03 | 2008-06-26 | プレスコ テクノロジー インコーポレーテッド | 波長特異的な熱放射及び処理を行う方法及びシステム |
JP2006286308A (ja) * | 2005-03-31 | 2006-10-19 | Toppan Printing Co Ltd | 透明導電膜積層体およびその製造方法 |
JP2008202066A (ja) * | 2007-02-16 | 2008-09-04 | Mitsubishi Heavy Ind Ltd | 真空処理装置 |
JP2008270572A (ja) * | 2007-04-20 | 2008-11-06 | Sanyo Electric Co Ltd | 光起電力素子の製造方法 |
Also Published As
Publication number | Publication date |
---|---|
US20140017849A1 (en) | 2014-01-16 |
WO2012128051A1 (ja) | 2012-09-27 |
US8835196B2 (en) | 2014-09-16 |
TW201251063A (en) | 2012-12-16 |
JPWO2012128051A1 (ja) | 2014-07-24 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
TWI701686B (zh) | 附透明導電膜之基板之製造方法、附透明導電膜之基板之製造裝置、附透明導電膜之基板、及太陽電池 | |
TWI412150B (zh) | 太陽電池之製造方法 | |
US20120156827A1 (en) | Method for forming cadmium tin oxide layer and a photovoltaic device | |
CN102282677A (zh) | 太阳能电池的制造方法和太阳能电池 | |
JP2006196771A (ja) | カルコパイライト型薄膜太陽電池及びその製造方法 | |
US9276142B2 (en) | Methods for forming a transparent oxide layer for a photovoltaic device | |
JP5891366B2 (ja) | 透明導電膜の製造方法および太陽電池の製造方法 | |
EP2469603A1 (en) | Improved method for manufacturing a photovoltaic device comprising a TCO layer | |
JP5132963B2 (ja) | 薄膜太陽電池の製造方法 | |
JP2011151160A (ja) | 薄膜太陽電池、及びその製造方法 | |
JP2010192690A (ja) | 太陽電池の製造方法 | |
JP2015099884A (ja) | Cigs太陽電池の製造方法 | |
US11807936B2 (en) | Method of enhancing electrical conduction in gallium-doped zinc oxide films and films made therefrom | |
JP2017050337A (ja) | Cigs半導体前駆体膜の製造方法およびそれを用いたcigs半導体膜の製造方法並びにそれらを用いたcigs太陽電池の製造方法 | |
WO2011096338A1 (ja) | 太陽電池用透明導電膜付き基板、太陽電池及びそれらの製造方法 | |
TW201027768A (en) | Manufacturing method of solar battery, etching device and CVD device | |
Chuang et al. | Improving performance of CIGS solar cells by annealing ITO thin films electrodes | |
JPWO2009038094A1 (ja) | 太陽電池の製造方法 | |
WO2014174953A1 (ja) | 光電変換素子の製造方法 | |
JP5742403B2 (ja) | 太陽電池用透明導電膜の形成方法およびその形成装置 | |
JP2000004036A (ja) | 微結晶半導体層の形成方法、および光起電力素子 | |
TW201339333A (zh) | 光電元件及其製造方法 | |
JP2014033179A (ja) | 光電変換素子の製造方法および光電変換素子 | |
TWI614906B (zh) | 半導體裝置及其製造方法 | |
JP2004247685A (ja) | 透明電極薄膜の形成方法と装置 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A711 | Notification of change in applicant |
Free format text: JAPANESE INTERMEDIATE CODE: A711 Effective date: 20150224 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20150728 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20150903 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20150929 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20151028 |
|
R151 | Written notification of patent or utility model registration |
Ref document number: 5891366 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R151 |
|
LAPS | Cancellation because of no payment of annual fees |