JP5889798B2 - マルチスペクトル感光部材 - Google Patents
マルチスペクトル感光部材 Download PDFInfo
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- G01N21/63—Systems in which the material investigated is excited whereby it emits light or causes a change in wavelength of the incident light optically excited
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Description
前記両面多層複合感光画素は、1つのシリコンNベース層の上面と底面にいずれもPドーピングを実施し、さらにPドーピング層上にNドーピングを実施することのよって得られるP−N−P、N−P−N−P、P−N−P−N、N−P−N−PーN複合結合によって形成される。
1つのシリコン結晶のNベース層(図4(a))を参照)を取り、正面の画素を必要とするカラーによって分類をし、各類画素に対して、カラー深さの必要に応じて一定の深さのPドーピングを行う。同様に、背面の画素をも必要とするカラーによって分類をし、各類画素に対して、カラー深さの必要に応じて一定の深さのPドーピングを行う。P不純物の埋め込み深さは、感応しようとするスペクトルの波長によって決められる。
1つのシリコン結晶体のN又はPベース層(図9−14を参照)を取り、正面上に単一面2層又は1層の方式で、1つ又は2つの感光画素層を作り、背面上にも単一面2層又は1層の方式で、1つ又は2つの感光画素層を作る。これらの異なる配置によって、1つの両面多層の複合感光画素の複合結合が構成されるが、中には、N−P−Nや、P−N−P、N−P−N−P、P−N−P−N、N−P−N−P−N、およびP−N−P−N−Pなどの各種情況が含まれる。
両方向感光に使われ、『マルチスペクトル感光部材およびその製作方法』(中国出願番号:200810217270.2)に説明された画素方向選択又はセクション方向選択方式を使用する場合は、正面のある画素類又は画素セクションには遮光コーティングが実施されるとともに、背面のその他の画素類又は画素セクションにも遮光コーティングが実施される。
上記実現において、感光ゲート(Photo Gate)で感光ダイオード(Photo Diode)を代替することができ、これによって、感光ゲートに基づく、単一面2層、両面2層、および両面多層感光部材が得られる。
本発明では最適化実現を例として挙げて説明しているが、これらの説明を何らかの制限であると理解してはいけない。画像感光部材(トランジスターチップなど)に詳しく、本文を熟読した者なら、数多くの変化や発揮はいずれも可能で、これらの変化と発揮が本発明の本当な精粋と簡単な変化でさえあれば、依然として本発明の範囲に属すると見なす。
Claims (7)
- マルチスペクトル感光部材であって、
1つのベース層からなり、前記ベース層上には複数の事前設置のパターンによって重複に配列された複合感光画素マクロユニットが設置されており、前記複合感光画素マクロユニットには、少なくとも1つの複合感光画素があり、前記複合感光画素は3つ又は4つの基本感光画素から構成され、前記基本感光画素は光照射方向に沿って各層別に分布され、その中、2つの基本感光画素はベース層の上面又は底面に2層に分けて配置され、残りの基本感光画素はベース層の底面又は上面に1層又は2層に分けて配置され、両面3層又は両面4層の複合感光画素が形成され、
前記マルチスペクトル感光部材において、同一複合感光画素中の基本感光画素は、それぞれ感応される対応するスペクトル範囲にて、2つごとに直交され(つまり、実質的に共用又は重なる部分はなく)、前記スペクトル範囲は可視光又は可視光および赤外線に位置し、前記複合感光画素マクロユニットの全ての前記複合感光画素によって感応されるスペクトル情報が結合されて、RGB又はCMYKカラーの再整合に必要とするスペクトル情報となり、
前記マルチスペクトル感光部材において、前記複合感光画素中の光源から最も近い基本感光画素によって感応されるスペクトルには、青色が含まれ;或いは、前記マルチスペクトル感光部材において、前記複合感光画素中の光源から最も遠い基本感光画素によって感応されるスペクトルには、黄色が含まれ、
前記両面3層又は両面4層の複合感光画素は、1つのシリコンNベース層の上面と底面にいずれもPドーピング層を備え、さらにPドーピング層上にNドーピング層を備えることによって得られるN−P−N−P、P−N−P−N、又はN−P−N−PーN複合結合によって形成される、或いは、
前記両面3層又は両面4層の複合感光画素は、1つのシリコンPベース層の上面と底面にいずれもNドーピング層を備え、さらにNドーピング層上にPドーピング層を備えることによって得られるN−P−N−P、P−N−P−N、又はP−N−P−NーP複合結合によって形成される、
ことを特徴とするマルチスペクトル感光部材。 - 前記マルチスペクトル感光部材において、前記複合感光画素マクロユニットの底層にて、赤外線の感応に使われる基本感光画素の底部表面には、ケイ素・ゲルマニウム結晶体層又はゲルマニウム結晶体層を備えることを特徴とする請求項1に記載のマルチスペクトル感光部材。
- 前記マルチスペクトル感光部材において、前記赤外線の感応に使われる基本感光画素の底部には、また、鏡面反射コーティング層を備えることを特徴とする請求項2に記載のマルチスペクトル感光部材。
- 前記マルチスペクトル感光部材において、前記複合感光画素は能動方式によってサンプリングされ、能動感光画素を形成する、
或いは、前記マルチスペクトル感光部材において、前記複合感光画素は受動方式によってサンプリングされ、受動感光画素を形成することを特徴とする請求項1−3のいずれかに記載のマルチスペクトル感光部材。 - 前記マルチスペクトル感光部材において、前記複合感光画素中の基本感光画素は感光ダイオード又は感光ゲートからなることを特徴とする請求項1−4のいずれかに記載のマルチスペクトル感光部材。
- 前記マルチスペクトル感光部材において、前記マルチスペクトル感光部材の感光方式は、正面感光方式、背面感光方式、及び両方向感光方式のいずれかであり、前記両方向感光方式は、タイムシェア方向選択方式、セクション方向選択方式、及び画素方向選択方式のいずれかであることを特徴とする請求項1−5のいずれかに記載のマルチスペクトル感光部材。
- 前記マルチスペクトル感光部材において、前記事前設置のパターンは、前記複合感光画素の重複配列、マトリックス配列、及びハニカムパターン配列のいずれかであることを特徴とする請求項1−6のいずれかに記載のマルチスペクトル感光部材。
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PCT/CN2010/073440 WO2011150551A1 (zh) | 2010-06-01 | 2010-06-01 | 多光谱感光器件 |
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US (1) | US9184204B2 (ja) |
EP (1) | EP2509107A4 (ja) |
JP (1) | JP5889798B2 (ja) |
KR (1) | KR101432016B1 (ja) |
CA (1) | CA2786760C (ja) |
RU (1) | RU2525654C1 (ja) |
WO (1) | WO2011150551A1 (ja) |
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US7057256B2 (en) | 2001-05-25 | 2006-06-06 | President & Fellows Of Harvard College | Silicon-based visible and near-infrared optoelectric devices |
US7442629B2 (en) | 2004-09-24 | 2008-10-28 | President & Fellows Of Harvard College | Femtosecond laser-induced formation of submicrometer spikes on a semiconductor substrate |
US9911781B2 (en) | 2009-09-17 | 2018-03-06 | Sionyx, Llc | Photosensitive imaging devices and associated methods |
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WO2011150551A1 (zh) | 2011-12-08 |
RU2012157799A (ru) | 2014-07-27 |
RU2525654C1 (ru) | 2014-08-20 |
KR101432016B1 (ko) | 2014-08-20 |
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