JP6017311B2 - マルチスペクトル感光部材およびその製作方法 - Google Patents
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- 238000004519 manufacturing process Methods 0.000 title claims description 25
- COHYTHOBJLSHDF-UHFFFAOYSA-N indigo powder Natural products N1C2=CC=CC=C2C(=O)C1=C1C(=O)C2=CC=CC=C2N1 COHYTHOBJLSHDF-UHFFFAOYSA-N 0.000 claims description 74
- 235000000177 Indigofera tinctoria Nutrition 0.000 claims description 70
- 229940097275 indigo Drugs 0.000 claims description 70
- 238000001228 spectrum Methods 0.000 claims description 56
- 238000000576 coating method Methods 0.000 claims description 54
- 239000011248 coating agent Substances 0.000 claims description 47
- 238000002329 infrared spectrum Methods 0.000 claims description 19
- 230000000295 complement effect Effects 0.000 claims description 16
- 230000003595 spectral effect Effects 0.000 claims description 14
- 230000001360 synchronised effect Effects 0.000 claims description 8
- 238000009826 distribution Methods 0.000 claims description 6
- 230000000903 blocking effect Effects 0.000 claims description 2
- 239000010410 layer Substances 0.000 description 180
- 239000003086 colorant Substances 0.000 description 85
- 238000000034 method Methods 0.000 description 48
- 230000002457 bidirectional effect Effects 0.000 description 45
- 238000005457 optimization Methods 0.000 description 38
- 235000012736 patent blue V Nutrition 0.000 description 23
- 244000144730 Amygdalus persica Species 0.000 description 18
- 235000006040 Prunus persica var persica Nutrition 0.000 description 18
- 230000035945 sensitivity Effects 0.000 description 16
- 230000006870 function Effects 0.000 description 14
- 239000002131 composite material Substances 0.000 description 13
- 239000002356 single layer Substances 0.000 description 13
- 238000012544 monitoring process Methods 0.000 description 10
- 238000012545 processing Methods 0.000 description 10
- 238000005516 engineering process Methods 0.000 description 9
- 238000010187 selection method Methods 0.000 description 9
- 238000003491 array Methods 0.000 description 8
- 230000008859 change Effects 0.000 description 7
- 238000013461 design Methods 0.000 description 7
- 238000005286 illumination Methods 0.000 description 6
- 230000008569 process Effects 0.000 description 5
- 238000013517 stratification Methods 0.000 description 5
- 206010034972 Photosensitivity reaction Diseases 0.000 description 4
- 230000010354 integration Effects 0.000 description 4
- 230000036211 photosensitivity Effects 0.000 description 4
- 230000008901 benefit Effects 0.000 description 3
- 238000006243 chemical reaction Methods 0.000 description 3
- 206010070834 Sensitisation Diseases 0.000 description 2
- 230000005540 biological transmission Effects 0.000 description 2
- 238000002955 isolation Methods 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 239000006187 pill Substances 0.000 description 2
- 230000008313 sensitization Effects 0.000 description 2
- 238000009827 uniform distribution Methods 0.000 description 2
- 238000001429 visible spectrum Methods 0.000 description 2
- AXDJCCTWPBKUKL-UHFFFAOYSA-N 4-[(4-aminophenyl)-(4-imino-3-methylcyclohexa-2,5-dien-1-ylidene)methyl]aniline;hydron;chloride Chemical compound Cl.C1=CC(=N)C(C)=CC1=C(C=1C=CC(N)=CC=1)C1=CC=C(N)C=C1 AXDJCCTWPBKUKL-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 230000000739 chaotic effect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 239000007888 film coating Substances 0.000 description 1
- 238000009501 film coating Methods 0.000 description 1
- 230000002496 gastric effect Effects 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 230000000968 intestinal effect Effects 0.000 description 1
- 210000000936 intestine Anatomy 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 230000004297 night vision Effects 0.000 description 1
- 238000003672 processing method Methods 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 210000002784 stomach Anatomy 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 230000007306 turnover Effects 0.000 description 1
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- H—ELECTRICITY
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14603—Special geometry or disposition of pixel-elements, address-lines or gate-electrodes
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14609—Pixel-elements with integrated switching, control, storage or amplification elements
- H01L27/1461—Pixel-elements with integrated switching, control, storage or amplification elements characterised by the photosensitive area
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/1462—Coatings
- H01L27/14621—Colour filter arrangements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/1462—Coatings
- H01L27/14623—Optical shielding
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14643—Photodiode arrays; MOS imagers
- H01L27/14645—Colour imagers
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/10—Circuitry of solid-state image sensors [SSIS]; Control thereof for transforming different wavelengths into image signals
- H04N25/17—Colour separation based on photon absorption depth, e.g. full colour resolution obtained simultaneously at each pixel location
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14641—Electronic components shared by two or more pixel-elements, e.g. one amplifier shared by two pixel elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14643—Photodiode arrays; MOS imagers
- H01L27/14645—Colour imagers
- H01L27/14647—Multicolour imagers having a stacked pixel-element structure, e.g. npn, npnpn or MQW elements
-
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- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
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- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14643—Photodiode arrays; MOS imagers
- H01L27/14649—Infrared imagers
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N2209/00—Details of colour television systems
- H04N2209/04—Picture signal generators
- H04N2209/041—Picture signal generators using solid-state devices
- H04N2209/042—Picture signal generators using solid-state devices having a single pick-up sensor
- H04N2209/047—Picture signal generators using solid-state devices having a single pick-up sensor using multispectral pick-up elements
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T29/00—Metal working
- Y10T29/49—Method of mechanical manufacture
- Y10T29/49002—Electrical device making
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- Electromagnetism (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Multimedia (AREA)
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- Solid State Image Pick-Up Elements (AREA)
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- Spectrometry And Color Measurement (AREA)
- Transforming Light Signals Into Electric Signals (AREA)
Description
ベース層の少なくも2つの前記面上には、いずれも感光画素組が設置されており、それぞれの感光画素組はその所在面の正面方向から照射されて来る任意に選ばれたスペクトル光の感応に使われる、
上記マルチスペクトル感光部材の製作方法。
ベース層の少なくも2つの前記面上には、いずれも感光画素組が設置されており、それぞれの感光画素組はその所在面の正面方向から照射されて来る任意に選ばれたスペクトル光の感応に使われる、
上記マルチスペクトル感光部材の製作方法。
ベース層の背面に第2組カラーを感応する感光画素を設置し、第2組カラーパターン(例えば、ベイヤパターン、ハニカムパターン、青・黄・桃・緑パターンなど)によってカラーマルチスペクトル感光部材を製作する。選択されたカラーとパターンは応用によって決められるもので、制限を受けなく、正面の情況と全く異なる設置をすることができる。
さらに、背面に設置される個々のカラーは、いずれも正面の対応する位置のカラーと可視光スペース又は赤外線スペースにて直交され、さらに好ましくて、背面に設置される個々のカラーは正面の対応する位置のカラーと可視光スペース又は可視光+赤外線スペースにて相補される。
Claims (10)
- マルチスペクトル感光部材であって、
少なくとも1つの透明なベース層からなり、それぞれのベース層には少なくとも2つの面があり、少なくとも2つの前記面上にはいずれも感光画素組が設置され、個々の感光画素組はその所在面の正面又は背面方向から照射されて来る任意に選ばれたスペクトル光に使われ、
個々の前記感光画素組により感応される光は、異なる方向における異なるシーン(different views)からのものであり、
前記マルチスペクトル感光部材において、また、方向選択装置が含まれており、前記方向選択装置は選定されたある一面上の全部又は一部の画素の感光に使われる場合、当該面の対称面上の対応する位置の画素を遮る、ことを特徴とするマルチスペクトル感光部材。 - 前記マルチスペクトル感光部材において、前記ベース層は1つであり、当該ベース層には2つの感光面があり、前記2つの感光面にそれぞれ含まれる各種スペクトルを感応する感光画素は同様又は異なる分布を有することを特徴とする請求項1に記載のマルチスペクトル感光部材。
- 前記マルチスペクトル感光部材において、前記任意に選ばれたスペクトルには、藍色や、緑色、赤色、青色、黄色、白色、赤外色、赤色+赤外スペクトル、黄色+赤外スペクトル、および可視光+赤外スペクトル中の一種又は複数種が含まれることを特徴とする請求項1又は2に記載のマルチスペクトル感光部材。
- 前記マルチスペクトル感光部材において、前記正面と背面の画素は方向性のある対称性を有することを特徴とする請求項1に記載のマルチスペクトル感光部材。
- 前記マルチスペクトル感光部材において、1つの方向から照射される場合、背面に位置する感光画素によって感応されるスペクトルは、正面の同じ位置上の感光画素によって感応されるスペクトルと直交されることを特徴とする請求項1に記載のマルチスペクトル感光部材。
- 前記マルチスペクトル感光部材において、1つの方向から照射される場合、背面に位置する感光画素によって感応されるスペクトルは、正面の同じ位置上の感光画素によって感応されるスペクトルと相補されることを特徴とする請求項5に記載のマルチスペクトル感光部材。
- 前記マルチスペクトル感光部材において、前記方向選択装置はシンクロナスマルチシャッターシステムでもあり、前記シンクロナスマルチシャッターシステム中のそれぞれのシャッターは、前記ベース層の各面の前方に設置されており、1セットの2つの正・背に相対する2つの面の前方に位置する2つのシャッターは、同一時刻において、それぞれオン・オフの状態になっていることを特徴とする請求項1に記載のマルチスペクトル感光部材。
- 前記マルチスペクトル感光部材において、前記方向選択装置は遮光コーティングでもあり、前記遮光コーティングは事前に設定された画素方向選択パターンによって、前記ベース層の各面上の一部の画素がコーティングされ、同一位置上の正・背に相対する2つの画素中、最大1つの画素のみ遮光コーティングがコーティングされることを特徴とする請求項1に記載のマルチスペクトル感光部材。
- 前記マルチスペクトル感光部材において、前記画素方向選択パターンは対角パターンや、水平2行間隔パターン、水平1行間隔パターン、垂直2行間隔パターン、垂直1行間隔パターン、およびセクションパターンから選択されることを特徴とする請求項8に記載のマルチスペクトル感光部材。
- マルチスペクトル感光部材の製作方法であって、
少なくとも1つの透明なベース層を製作し、それぞれのベース層には少なくとも2つの面を有し、
ベース層の少なくも2つの前記面上には、いずれも感光画素組が設置されており、それぞれの感光画素組はその所在面の正面方向から照射されて来る任意に選ばれたスペクトル光の感応に使われ、
それぞれの前記感光画素組により感応される光は、異なる方向における異なるシーン(different views)からのものであり、
前記マルチスペクトル感光部材において、また、方向選択装置が含まれており、前記方向選択装置は選定されたある一面上の全部又は一部の画素の感光に使われる場合、当該面の対称面上の対応する位置の画素を遮る、ことを特徴とする、マルチスペクトル感光部材の製作方法。
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US9077910B2 (en) * | 2011-04-06 | 2015-07-07 | Dolby Laboratories Licensing Corporation | Multi-field CCD capture for HDR imaging |
DE102012109987B4 (de) * | 2012-05-15 | 2017-08-24 | Taiwan Semiconductor Manufacturing Co., Ltd. | BSI-Bildsensor-Chips mit integrierten Farbfiltern und Verfahren zu deren Herstellung |
US9349769B2 (en) | 2012-08-22 | 2016-05-24 | Taiwan Semiconductor Manufacturing Company, Ltd. | Image sensor comprising reflective guide layer and method of forming the same |
JP2015060121A (ja) * | 2013-09-19 | 2015-03-30 | 株式会社東芝 | カラーフィルタアレイおよび固体撮像素子 |
US9883149B2 (en) * | 2014-08-01 | 2018-01-30 | Sri International | Imaging sensor and method for color night vision |
JP6561571B2 (ja) * | 2015-05-12 | 2019-08-21 | ソニー株式会社 | 医療用撮像装置、撮像方法及び撮像装置 |
US10644073B2 (en) * | 2016-12-19 | 2020-05-05 | Samsung Electronics Co., Ltd. | Image sensors and electronic devices including the same |
DE102019102176B4 (de) * | 2019-01-29 | 2022-11-24 | Senorics Gmbh | Hybrides multispektrales Bauelement |
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- 2010-06-01 ES ES10852351T patent/ES2763182T3/es active Active
- 2010-06-01 KR KR1020127026177A patent/KR101461405B1/ko active IP Right Grant
- 2010-06-01 WO PCT/CN2010/073441 patent/WO2011150552A1/zh active Application Filing
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Publication number | Publication date |
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RU2012143942A (ru) | 2014-04-20 |
WO2011150552A1 (zh) | 2011-12-08 |
CA2788714A1 (en) | 2011-12-08 |
CA2788714C (en) | 2016-04-19 |
EP2509108A1 (en) | 2012-10-10 |
US20130062512A1 (en) | 2013-03-14 |
KR101517798B1 (ko) | 2015-05-06 |
KR20140097386A (ko) | 2014-08-06 |
JP2013515405A (ja) | 2013-05-02 |
KR101461405B1 (ko) | 2014-11-13 |
EP2509108A4 (en) | 2017-12-27 |
KR20120125664A (ko) | 2012-11-16 |
US10008522B2 (en) | 2018-06-26 |
RU2512074C1 (ru) | 2014-04-10 |
ES2763182T3 (es) | 2020-05-27 |
EP2509108B1 (en) | 2019-10-02 |
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