JP4855192B2 - イメージセンサ及びデジタルカメラ - Google Patents
イメージセンサ及びデジタルカメラ Download PDFInfo
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- JP4855192B2 JP4855192B2 JP2006248980A JP2006248980A JP4855192B2 JP 4855192 B2 JP4855192 B2 JP 4855192B2 JP 2006248980 A JP2006248980 A JP 2006248980A JP 2006248980 A JP2006248980 A JP 2006248980A JP 4855192 B2 JP4855192 B2 JP 4855192B2
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/1462—Coatings
- H01L27/14621—Colour filter arrangements
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- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14643—Photodiode arrays; MOS imagers
- H01L27/14645—Colour imagers
- H01L27/14647—Multicolour imagers having a stacked pixel-element structure, e.g. npn, npnpn or MQW elements
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N23/00—Cameras or camera modules comprising electronic image sensors; Control thereof
- H04N23/10—Cameras or camera modules comprising electronic image sensors; Control thereof for generating image signals from different wavelengths
- H04N23/11—Cameras or camera modules comprising electronic image sensors; Control thereof for generating image signals from different wavelengths for generating image signals from visible and infrared light wavelengths
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N23/00—Cameras or camera modules comprising electronic image sensors; Control thereof
- H04N23/10—Cameras or camera modules comprising electronic image sensors; Control thereof for generating image signals from different wavelengths
- H04N23/12—Cameras or camera modules comprising electronic image sensors; Control thereof for generating image signals from different wavelengths with one sensor only
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/10—Circuitry of solid-state image sensors [SSIS]; Control thereof for transforming different wavelengths into image signals
- H04N25/11—Arrangement of colour filter arrays [CFA]; Filter mosaics
- H04N25/13—Arrangement of colour filter arrays [CFA]; Filter mosaics characterised by the spectral characteristics of the filter elements
- H04N25/134—Arrangement of colour filter arrays [CFA]; Filter mosaics characterised by the spectral characteristics of the filter elements based on three different wavelength filter elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14618—Containers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Multimedia (AREA)
- Signal Processing (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Transforming Light Signals Into Electric Signals (AREA)
- Solid State Image Pick-Up Elements (AREA)
- Studio Devices (AREA)
- Color Television Image Signal Generators (AREA)
Description
また、これにより、前記複数の受光素子の表面の受光面及び裏面の受光面に対して、互いに異なる所望の波長の光を正確に入射させることができる。さらに、これにより、前記n型半導体基板の層厚のみが異なる、従来の固体撮像素子と略同様の製造プロセスによって当該イメージセンサを製造することができる。
まず、図1の断面側面図を参照して、本実施の形態に係る撮像素子50の全体的な構成を説明する。
本第2の実施の形態では、イメージセンサに設けられているカラーフィルタ層及び非可視光フィルタ層の他の形態例について説明する。なお、本第2の実施の形態に係るイメージセンサ70の構成は、カラーフィルタ層及び非可視光フィルタ層の構成を除いて上記第1の実施の形態に係るものと同様であるので、ここでは、まず、本第2の実施の形態に係るカラーフィルタ層91’及び非可視光フィルタ層95’の構成を、図6を参照しつつ説明する。
12 レンズ
14 プリズム(表面入射手段)
14A コールドフィルタ(裏面入射手段)
16 プリズム(表面入射手段)
18A,18B 液晶シャッタ
20A,20B 反射鏡(裏面入射手段)
20C,20D 反射鏡(表面入射手段)
22A,22B 反射鏡(裏面入射手段)
40 制御部(制御手段)
42 赤外光源
44 集光レンズ
46 シャッタ駆動部
50 撮像素子
58 電極
70 イメージセンサ
72 ガラス基板(硝子板)
74 センサ部
80 受光素子
82 垂直電荷転送路(電荷出力手段)
87 n型半導体基板
88 p型ウエル
91,91’ カラーフィルタ層(第1のフィルタ)
95,95’ 非可視光フィルタ層(第2のフィルタ)
Claims (7)
- 各々画素に対応してマトリクス状に内部に設けられ、表面に受光面を有すると共に、裏面に対して光が入射可能に構成されており、当該受光面及び当該裏面で受光された光の光量に応じて電荷を蓄積し、層厚が所定波長とは異なる波長の光を透過することができる厚さとされたn型半導体基板にp型ウエルが積層され、当該p型ウエルにn型領域が形成されることにより得られた複数の受光素子と、
前記複数の受光素子の表面側に設けられ、前記所定波長の光を透過して前記複数の受光素子の少なくとも一部に入射させる第1のフィルタと、
前記複数の受光素子の裏面側に設けられ、前記所定波長とは異なる波長の光を透過して前記複数の受光素子の少なくとも一部に入射させる第2のフィルタと、
前記複数の受光素子に蓄積された電荷を外部に出力する電荷出力手段と、
を備えたことを特徴とするイメージセンサ。 - 裏面に補強用の硝子板が設けられた
請求項1記載のイメージセンサ。 - 前記所定波長が可視光の波長で、かつ前記所定波長とは異なる波長が非可視光の波長であるか、又は前記所定波長が非可視光の波長で、かつ前記所定波長とは異なる波長が可視光の波長である
請求項1または請求項2記載のイメージセンサ。 - 前記第1のフィルタ及び前記第2のフィルタは、前記所定波長の光の入射対象とする受光素子の配置位置と、前記所定波長とは異なる波長の光の入射対象とする受光素子の配置位置とが互いに交互となるように構成されている
請求項1乃至請求項3の何れか1項記載のイメージセンサ。 - 前記第1のフィルタ及び前記第2のフィルタは、各々の透過対象とする波長の光を前記複数の受光素子の全てに入射させるように構成されている
請求項1乃至請求項3の何れか1項記載のイメージセンサ。 - 請求項1乃至請求項5の何れか1項記載のイメージセンサと、
前記イメージセンサの表面に対して前記所定波長の光を入射させる表面入射手段と、
前記イメージセンサの裏面に対して前記所定波長とは異なる波長の光を入射させる裏面入射手段と、
前記イメージセンサから出力された電荷に基づいて撮影を行うように制御する制御手段と、
を備えたデジタルカメラ。 - 前記制御手段は、前記イメージセンサが請求項5に記載のイメージセンサである場合、前記表面入射手段による光の入射と、前記裏面入射手段による光の入射が連続的に交互となるように切り替えると共に、これに応じて前記イメージセンサに蓄積される電荷を前記切り替えのタイミングに同期させて読み出すように制御する
請求項6記載のデジタルカメラ。
Priority Applications (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2006248980A JP4855192B2 (ja) | 2006-09-14 | 2006-09-14 | イメージセンサ及びデジタルカメラ |
TW096131162A TWI356632B (en) | 2006-09-14 | 2007-08-23 | Image sensor and digital camera |
US11/892,432 US7538311B2 (en) | 2006-09-14 | 2007-08-23 | Image sensor and digital camera |
CNB2007101463477A CN100548033C (zh) | 2006-09-14 | 2007-09-06 | 图像传感器和数字照相机 |
KR1020070093660A KR100927360B1 (ko) | 2006-09-14 | 2007-09-14 | 이미지 센서 및 디지털 카메라 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
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JP2006248980A JP4855192B2 (ja) | 2006-09-14 | 2006-09-14 | イメージセンサ及びデジタルカメラ |
Publications (2)
Publication Number | Publication Date |
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JP2008072423A JP2008072423A (ja) | 2008-03-27 |
JP4855192B2 true JP4855192B2 (ja) | 2012-01-18 |
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Application Number | Title | Priority Date | Filing Date |
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JP2006248980A Expired - Fee Related JP4855192B2 (ja) | 2006-09-14 | 2006-09-14 | イメージセンサ及びデジタルカメラ |
Country Status (5)
Country | Link |
---|---|
US (1) | US7538311B2 (ja) |
JP (1) | JP4855192B2 (ja) |
KR (1) | KR100927360B1 (ja) |
CN (1) | CN100548033C (ja) |
TW (1) | TWI356632B (ja) |
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JP4000449B2 (ja) * | 2002-02-26 | 2007-10-31 | ソニー株式会社 | イメージセンサ、撮像装置および携帯電話機 |
WO2003098920A1 (en) * | 2002-05-16 | 2003-11-27 | Koninklijke Philips Electronics N.V. | Image sensor device |
US20070102622A1 (en) * | 2005-07-01 | 2007-05-10 | Olsen Richard I | Apparatus for multiple camera devices and method of operating same |
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2006
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2007
- 2007-08-23 US US11/892,432 patent/US7538311B2/en not_active Expired - Fee Related
- 2007-08-23 TW TW096131162A patent/TWI356632B/zh not_active IP Right Cessation
- 2007-09-06 CN CNB2007101463477A patent/CN100548033C/zh not_active Expired - Fee Related
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US7538311B2 (en) | 2009-05-26 |
KR20080025022A (ko) | 2008-03-19 |
CN101146182A (zh) | 2008-03-19 |
TW200818897A (en) | 2008-04-16 |
US20080068478A1 (en) | 2008-03-20 |
JP2008072423A (ja) | 2008-03-27 |
KR100927360B1 (ko) | 2009-11-19 |
TWI356632B (en) | 2012-01-11 |
CN100548033C (zh) | 2009-10-07 |
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