CN100548033C - 图像传感器和数字照相机 - Google Patents
图像传感器和数字照相机 Download PDFInfo
- Publication number
- CN100548033C CN100548033C CNB2007101463477A CN200710146347A CN100548033C CN 100548033 C CN100548033 C CN 100548033C CN B2007101463477 A CNB2007101463477 A CN B2007101463477A CN 200710146347 A CN200710146347 A CN 200710146347A CN 100548033 C CN100548033 C CN 100548033C
- Authority
- CN
- China
- Prior art keywords
- light
- imageing sensor
- wavelength
- light receiving
- incident
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 230000003287 optical effect Effects 0.000 claims abstract description 73
- 230000005540 biological transmission Effects 0.000 claims description 53
- 238000006243 chemical reaction Methods 0.000 claims description 36
- 239000000758 substrate Substances 0.000 claims description 26
- 239000004065 semiconductor Substances 0.000 claims description 16
- 239000011521 glass Substances 0.000 claims description 15
- 238000009825 accumulation Methods 0.000 claims description 7
- 238000003384 imaging method Methods 0.000 description 43
- 239000010410 layer Substances 0.000 description 34
- 230000000875 corresponding effect Effects 0.000 description 23
- 239000004973 liquid crystal related substance Substances 0.000 description 15
- 230000035945 sensitivity Effects 0.000 description 14
- 238000000034 method Methods 0.000 description 11
- 238000005516 engineering process Methods 0.000 description 10
- 230000006870 function Effects 0.000 description 7
- 239000011159 matrix material Substances 0.000 description 7
- 230000008569 process Effects 0.000 description 7
- 239000007787 solid Substances 0.000 description 7
- 230000000903 blocking effect Effects 0.000 description 6
- 230000007850 degeneration Effects 0.000 description 6
- 230000000694 effects Effects 0.000 description 6
- 230000009467 reduction Effects 0.000 description 6
- 230000015572 biosynthetic process Effects 0.000 description 5
- 230000002596 correlated effect Effects 0.000 description 5
- 238000005755 formation reaction Methods 0.000 description 5
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 5
- 229920005591 polysilicon Polymers 0.000 description 5
- 230000004888 barrier function Effects 0.000 description 4
- 238000001914 filtration Methods 0.000 description 4
- 230000004048 modification Effects 0.000 description 4
- 238000012986 modification Methods 0.000 description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- 210000005252 bulbus oculi Anatomy 0.000 description 3
- 230000007423 decrease Effects 0.000 description 3
- 239000011229 interlayer Substances 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 230000000007 visual effect Effects 0.000 description 3
- 238000010521 absorption reaction Methods 0.000 description 2
- 239000003086 colorant Substances 0.000 description 2
- 230000005611 electricity Effects 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 238000005728 strengthening Methods 0.000 description 2
- 230000001360 synchronised effect Effects 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 230000000295 complement effect Effects 0.000 description 1
- 230000004448 convergence reflex Effects 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 210000000887 face Anatomy 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 238000004020 luminiscence type Methods 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 239000005360 phosphosilicate glass Substances 0.000 description 1
- 238000005070 sampling Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 230000002463 transducing effect Effects 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- 238000011144 upstream manufacturing Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/1462—Coatings
- H01L27/14621—Colour filter arrangements
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14643—Photodiode arrays; MOS imagers
- H01L27/14645—Colour imagers
- H01L27/14647—Multicolour imagers having a stacked pixel-element structure, e.g. npn, npnpn or MQW elements
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N23/00—Cameras or camera modules comprising electronic image sensors; Control thereof
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N23/00—Cameras or camera modules comprising electronic image sensors; Control thereof
- H04N23/10—Cameras or camera modules comprising electronic image sensors; Control thereof for generating image signals from different wavelengths
- H04N23/11—Cameras or camera modules comprising electronic image sensors; Control thereof for generating image signals from different wavelengths for generating image signals from visible and infrared light wavelengths
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N23/00—Cameras or camera modules comprising electronic image sensors; Control thereof
- H04N23/10—Cameras or camera modules comprising electronic image sensors; Control thereof for generating image signals from different wavelengths
- H04N23/12—Cameras or camera modules comprising electronic image sensors; Control thereof for generating image signals from different wavelengths with one sensor only
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/10—Circuitry of solid-state image sensors [SSIS]; Control thereof for transforming different wavelengths into image signals
- H04N25/11—Arrangement of colour filter arrays [CFA]; Filter mosaics
- H04N25/13—Arrangement of colour filter arrays [CFA]; Filter mosaics characterised by the spectral characteristics of the filter elements
- H04N25/134—Arrangement of colour filter arrays [CFA]; Filter mosaics characterised by the spectral characteristics of the filter elements based on three different wavelength filter elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14618—Containers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Abstract
Description
Claims (14)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP248980/2006 | 2006-09-14 | ||
JP2006248980A JP4855192B2 (ja) | 2006-09-14 | 2006-09-14 | イメージセンサ及びデジタルカメラ |
Publications (2)
Publication Number | Publication Date |
---|---|
CN101146182A CN101146182A (zh) | 2008-03-19 |
CN100548033C true CN100548033C (zh) | 2009-10-07 |
Family
ID=39188150
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CNB2007101463477A Expired - Fee Related CN100548033C (zh) | 2006-09-14 | 2007-09-06 | 图像传感器和数字照相机 |
Country Status (5)
Country | Link |
---|---|
US (1) | US7538311B2 (zh) |
JP (1) | JP4855192B2 (zh) |
KR (1) | KR100927360B1 (zh) |
CN (1) | CN100548033C (zh) |
TW (1) | TWI356632B (zh) |
Families Citing this family (46)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20100075481A1 (en) | 2008-07-08 | 2010-03-25 | Xiao (Charles) Yang | Method and structure of monolithically integrated ic-mems oscillator using ic foundry-compatible processes |
US9595479B2 (en) | 2008-07-08 | 2017-03-14 | MCube Inc. | Method and structure of three dimensional CMOS transistors with hybrid crystal orientations |
US8134589B2 (en) * | 2008-07-17 | 2012-03-13 | Eastman Kodak Company | Zoom by multiple image capture |
US8148781B2 (en) | 2008-07-28 | 2012-04-03 | MCube Inc. | Method and structures of monolithically integrated ESD suppression device |
US8120076B2 (en) * | 2008-07-28 | 2012-02-21 | Yang Xiao Charles | Method and structure of monolithically integrated infrared sensing device |
JPWO2010100896A1 (ja) * | 2009-03-05 | 2012-09-06 | パナソニック株式会社 | 撮像装置および両面照射型固体撮像素子 |
JPWO2011010455A1 (ja) * | 2009-07-24 | 2012-12-27 | パナソニック株式会社 | 撮像装置および固体撮像素子 |
KR101648353B1 (ko) * | 2009-09-25 | 2016-08-17 | 삼성전자 주식회사 | 거리 센서를 포함하는 이미지 센서 |
JP5584679B2 (ja) * | 2009-10-07 | 2014-09-03 | パナソニック インテレクチュアル プロパティ コーポレーション オブ アメリカ | 固体撮像素子および撮像装置 |
TWI482961B (zh) * | 2009-11-16 | 2015-05-01 | Rudolph Technologies Inc | 接合基板的紅外線檢查 |
JP5485004B2 (ja) * | 2010-04-23 | 2014-05-07 | パナソニック株式会社 | 撮像装置 |
WO2011150554A1 (zh) * | 2010-06-01 | 2011-12-08 | 博立码杰通讯(深圳)有限公司 | 一种多光谱感光器件及其采样方法 |
WO2011150552A1 (zh) | 2010-06-01 | 2011-12-08 | 博立码杰通讯(深圳)有限公司 | 多光谱感光器件及其制作方法 |
KR20110140010A (ko) * | 2010-06-24 | 2011-12-30 | 삼성전자주식회사 | 근적외광 신호를 이용한 이미지 센서 |
JP5834386B2 (ja) * | 2010-08-20 | 2015-12-24 | ソニー株式会社 | 光学センサ、レンズモジュール、およびカメラモジュール |
JP5863094B2 (ja) * | 2011-07-12 | 2016-02-16 | 国立大学法人 東京大学 | 撮像素子およびこれを用いた撮像装置 |
TWI526706B (zh) | 2011-10-05 | 2016-03-21 | 原相科技股份有限公司 | 影像系統 |
CN106663179B (zh) * | 2014-08-06 | 2019-09-10 | 罗兰Dg有限公司 | 光学符号的读取装置和读取方法 |
JPWO2017057278A1 (ja) * | 2015-09-30 | 2018-07-26 | 株式会社ニコン | 撮像素子および撮像装置 |
KR102465995B1 (ko) * | 2015-09-30 | 2022-11-25 | 삼성전자주식회사 | 색분할기 구조와 그 제조방법, 색분할기 구조를 포함하는 이미지센서 및 이미지센서를 포함하는 광학장치 |
US10917625B1 (en) * | 2016-10-20 | 2021-02-09 | Facebook Technologies, Llc | Time multiplexed dual-band sensor |
US10474009B2 (en) | 2017-06-05 | 2019-11-12 | Ford Global Technologies, Llc | Filter adjustment of vehicle cameras |
US10686996B2 (en) | 2017-06-26 | 2020-06-16 | Facebook Technologies, Llc | Digital pixel with extended dynamic range |
US10419701B2 (en) | 2017-06-26 | 2019-09-17 | Facebook Technologies, Llc | Digital pixel image sensor |
US10334187B2 (en) | 2017-08-07 | 2019-06-25 | Ford Global Technologies, Llc | Adjustable stacked filter arrays for vehicle cameras |
US10598546B2 (en) | 2017-08-17 | 2020-03-24 | Facebook Technologies, Llc | Detecting high intensity light in photo sensor |
US11393867B2 (en) | 2017-12-06 | 2022-07-19 | Facebook Technologies, Llc | Multi-photodiode pixel cell |
US10969273B2 (en) | 2018-03-19 | 2021-04-06 | Facebook Technologies, Llc | Analog-to-digital converter having programmable quantization resolution |
US11004881B2 (en) | 2018-04-03 | 2021-05-11 | Facebook Technologies, Llc | Global shutter image sensor |
US11233085B2 (en) | 2018-05-09 | 2022-01-25 | Facebook Technologies, Llc | Multi-photo pixel cell having vertical gate structure |
US11089210B2 (en) | 2018-06-11 | 2021-08-10 | Facebook Technologies, Llc | Configurable image sensor |
US11906353B2 (en) | 2018-06-11 | 2024-02-20 | Meta Platforms Technologies, Llc | Digital pixel with extended dynamic range |
US11089241B2 (en) | 2018-06-11 | 2021-08-10 | Facebook Technologies, Llc | Pixel cell with multiple photodiodes |
US11463636B2 (en) | 2018-06-27 | 2022-10-04 | Facebook Technologies, Llc | Pixel sensor having multiple photodiodes |
US10897586B2 (en) | 2018-06-28 | 2021-01-19 | Facebook Technologies, Llc | Global shutter image sensor |
US10931884B2 (en) | 2018-08-20 | 2021-02-23 | Facebook Technologies, Llc | Pixel sensor having adaptive exposure time |
US11956413B2 (en) | 2018-08-27 | 2024-04-09 | Meta Platforms Technologies, Llc | Pixel sensor having multiple photodiodes and shared comparator |
US11595602B2 (en) | 2018-11-05 | 2023-02-28 | Meta Platforms Technologies, Llc | Image sensor post processing |
US11102430B2 (en) | 2018-12-10 | 2021-08-24 | Facebook Technologies, Llc | Pixel sensor having multiple photodiodes |
US11218660B1 (en) | 2019-03-26 | 2022-01-04 | Facebook Technologies, Llc | Pixel sensor having shared readout structure |
US11943561B2 (en) | 2019-06-13 | 2024-03-26 | Meta Platforms Technologies, Llc | Non-linear quantization at pixel sensor |
US11936998B1 (en) | 2019-10-17 | 2024-03-19 | Meta Platforms Technologies, Llc | Digital pixel sensor having extended dynamic range |
US11902685B1 (en) | 2020-04-28 | 2024-02-13 | Meta Platforms Technologies, Llc | Pixel sensor having hierarchical memory |
US11910114B2 (en) | 2020-07-17 | 2024-02-20 | Meta Platforms Technologies, Llc | Multi-mode image sensor |
US11956560B2 (en) | 2020-10-09 | 2024-04-09 | Meta Platforms Technologies, Llc | Digital pixel sensor having reduced quantization operation |
CN113055621B (zh) * | 2021-03-11 | 2024-04-09 | 维沃移动通信有限公司 | 摄像头模组和电子设备 |
Family Cites Families (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4507674A (en) * | 1982-06-07 | 1985-03-26 | Hughes Aircraft Company | Backside illuminated blocked impurity band infrared detector |
US5134274A (en) * | 1991-03-18 | 1992-07-28 | Hughes Aircraft Company | Two-sided solid-state imaging device |
JPH06177416A (ja) | 1992-12-07 | 1994-06-24 | Nippondenso Co Ltd | 光センサー |
JP3297504B2 (ja) | 1993-07-30 | 2002-07-02 | キヤノン株式会社 | 光学装置 |
JPH0783614A (ja) | 1993-09-14 | 1995-03-28 | Fujitsu Ltd | 距離画像処理方式 |
US5808350A (en) * | 1997-01-03 | 1998-09-15 | Raytheon Company | Integrated IR, visible and NIR sensor and methods of fabricating same |
JP4012995B2 (ja) | 1997-01-21 | 2007-11-28 | ソニー株式会社 | 画像撮像装置および方法 |
JP4000449B2 (ja) * | 2002-02-26 | 2007-10-31 | ソニー株式会社 | イメージセンサ、撮像装置および携帯電話機 |
AU2003219437A1 (en) * | 2002-05-16 | 2003-12-02 | Koninklijke Philips Electronics N.V. | Image sensor device |
US20070102622A1 (en) * | 2005-07-01 | 2007-05-10 | Olsen Richard I | Apparatus for multiple camera devices and method of operating same |
-
2006
- 2006-09-14 JP JP2006248980A patent/JP4855192B2/ja not_active Expired - Fee Related
-
2007
- 2007-08-23 US US11/892,432 patent/US7538311B2/en not_active Expired - Fee Related
- 2007-08-23 TW TW096131162A patent/TWI356632B/zh not_active IP Right Cessation
- 2007-09-06 CN CNB2007101463477A patent/CN100548033C/zh not_active Expired - Fee Related
- 2007-09-14 KR KR1020070093660A patent/KR100927360B1/ko not_active IP Right Cessation
Also Published As
Publication number | Publication date |
---|---|
KR20080025022A (ko) | 2008-03-19 |
US20080068478A1 (en) | 2008-03-20 |
US7538311B2 (en) | 2009-05-26 |
JP2008072423A (ja) | 2008-03-27 |
CN101146182A (zh) | 2008-03-19 |
KR100927360B1 (ko) | 2009-11-19 |
JP4855192B2 (ja) | 2012-01-18 |
TWI356632B (en) | 2012-01-11 |
TW200818897A (en) | 2008-04-16 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
CN100548033C (zh) | 图像传感器和数字照相机 | |
KR100875938B1 (ko) | 광학기기 및 빔 스플리터 | |
JP5098405B2 (ja) | 撮像素子、焦点検出装置および撮像装置 | |
US8310590B2 (en) | Image sensor and image-capturing device with image-capturing and focus detection pixels | |
US8134191B2 (en) | Solid-state imaging device, signal processing method, and camera | |
CN101821657B (zh) | 摄像设备 | |
TWI475260B (zh) | 用於數位相機之具有紅色吸收層之紅外線截止濾波器 | |
CN102484723B (zh) | 固体摄像元件、摄像装置以及信号处理方法 | |
CN101794797A (zh) | 图像拾取元件和图像拾取设备 | |
JP4867448B2 (ja) | 物理情報取得方法および物理情報取得装置 | |
JP5034936B2 (ja) | 固体撮像素子及びこれを用いた撮像装置 | |
CN102739943A (zh) | 图像拾取器件和图像拾取单元 | |
JP2008072470A (ja) | 光電変換素子および撮像装置 | |
JP2009054806A (ja) | 撮像素子及び撮像装置 | |
US7355154B2 (en) | Image sensing apparatus with movable light flux splitter and control method thereof | |
JP2006126652A (ja) | 撮像装置 | |
CN102023458A (zh) | 摄像装置 | |
JP2006032713A (ja) | 固体撮像素子 | |
US6305853B1 (en) | Camera utilizing film and reflective imager | |
JP5663573B2 (ja) | 撮像装置及び撮像方法 | |
JP2007187854A (ja) | 撮像装置 | |
JP7398284B2 (ja) | カラー画像撮像装置 | |
JP2007094073A (ja) | 合焦装置および撮像装置 | |
JP2006317918A (ja) | 撮像装置 | |
JP2007101965A (ja) | 撮像装置 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
EE01 | Entry into force of recordation of patent licensing contract |
Application publication date: 20080319 Assignee: FUJIFILM Imaging Systems (Suzhou) Co., Ltd. Assignor: Fuji Film Corp. Contract record no.: 2010990000098 Denomination of invention: Image sensor and digital camera Granted publication date: 20091007 License type: Exclusive License Record date: 20100226 |
|
CF01 | Termination of patent right due to non-payment of annual fee | ||
CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20091007 Termination date: 20170906 |