FR2849273B1 - Matrice de detecteurs multispectraux - Google Patents

Matrice de detecteurs multispectraux

Info

Publication number
FR2849273B1
FR2849273B1 FR0216178A FR0216178A FR2849273B1 FR 2849273 B1 FR2849273 B1 FR 2849273B1 FR 0216178 A FR0216178 A FR 0216178A FR 0216178 A FR0216178 A FR 0216178A FR 2849273 B1 FR2849273 B1 FR 2849273B1
Authority
FR
France
Prior art keywords
matrix
multispectral detectors
multispectral
detectors
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
FR0216178A
Other languages
English (en)
Other versions
FR2849273A1 (fr
Inventor
Pierre Gidon
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Commissariat a lEnergie Atomique et aux Energies Alternatives CEA
Original Assignee
Commissariat a lEnergie Atomique CEA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Commissariat a lEnergie Atomique CEA filed Critical Commissariat a lEnergie Atomique CEA
Priority to FR0216178A priority Critical patent/FR2849273B1/fr
Priority to US10/540,334 priority patent/US7352043B2/en
Priority to PCT/FR2003/050186 priority patent/WO2004057675A1/fr
Priority to EP03809998A priority patent/EP1573821A1/fr
Publication of FR2849273A1 publication Critical patent/FR2849273A1/fr
Application granted granted Critical
Publication of FR2849273B1 publication Critical patent/FR2849273B1/fr
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14665—Imagers using a photoconductor layer
    • H01L27/14669—Infrared imagers
    • H01L27/1467—Infrared imagers of the hybrid type
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14643—Photodiode arrays; MOS imagers
    • H01L27/14645—Colour imagers
    • H01L27/14647—Multicolour imagers having a stacked pixel-element structure, e.g. npn, npnpn or MQW elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14643—Photodiode arrays; MOS imagers
    • H01L27/14649—Infrared imagers
    • H01L27/1465—Infrared imagers of the hybrid type
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14643—Photodiode arrays; MOS imagers
    • H01L27/14649—Infrared imagers
    • H01L27/14652—Multispectral infrared imagers, having a stacked pixel-element structure, e.g. npn, npnpn or MQW structures
FR0216178A 2002-12-19 2002-12-19 Matrice de detecteurs multispectraux Expired - Fee Related FR2849273B1 (fr)

Priority Applications (4)

Application Number Priority Date Filing Date Title
FR0216178A FR2849273B1 (fr) 2002-12-19 2002-12-19 Matrice de detecteurs multispectraux
US10/540,334 US7352043B2 (en) 2002-12-19 2003-12-17 Multispectral detector matrix
PCT/FR2003/050186 WO2004057675A1 (fr) 2002-12-19 2003-12-17 Matrice de detecteurs multispectraux
EP03809998A EP1573821A1 (fr) 2002-12-19 2003-12-17 Matrice de detecteurs multispectraux

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR0216178A FR2849273B1 (fr) 2002-12-19 2002-12-19 Matrice de detecteurs multispectraux

Publications (2)

Publication Number Publication Date
FR2849273A1 FR2849273A1 (fr) 2004-06-25
FR2849273B1 true FR2849273B1 (fr) 2005-10-14

Family

ID=32406204

Family Applications (1)

Application Number Title Priority Date Filing Date
FR0216178A Expired - Fee Related FR2849273B1 (fr) 2002-12-19 2002-12-19 Matrice de detecteurs multispectraux

Country Status (4)

Country Link
US (1) US7352043B2 (fr)
EP (1) EP1573821A1 (fr)
FR (1) FR2849273B1 (fr)
WO (1) WO2004057675A1 (fr)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2005098956A1 (fr) * 2004-04-12 2005-10-20 Nanyang Technological University Procede et dispositif de photodetection sensibles a la longueur d'onde, utilisant plusieurs jonctions pn
DE102004060365B4 (de) 2004-12-15 2009-03-19 Austriamicrosystems Ag Bauelement mit Halbleiterübergang und Verfahren zur Herstellung
KR100850859B1 (ko) * 2006-12-21 2008-08-06 동부일렉트로닉스 주식회사 이미지 센서 및 그 제조 방법
US7791159B2 (en) * 2007-10-30 2010-09-07 Panasonic Corporation Solid-state imaging device and method for fabricating the same
FR2924803A1 (fr) * 2007-12-11 2009-06-12 Commissariat Energie Atomique Dispositif d'analyse spectroscopique interferentielle
US8399820B2 (en) 2009-06-23 2013-03-19 Sensors Unlimited, Inc. Multicolor detectors and applications thereof
US10008522B2 (en) * 2010-06-01 2018-06-26 Boly Media Communications (Shenzen) Co., Ltd. Multi-spectrum photosensitive device and manufacturing method thereof
FR2965104B1 (fr) 2010-09-16 2013-06-07 Commissariat Energie Atomique Detecteur bispectral multicouche a photodiodes et procede de fabrication d'un tel detecteur
FR2982706A1 (fr) * 2011-11-15 2013-05-17 Soc Fr Detecteurs Infrarouges Sofradir Dispositif de detection de deux couleurs differentes a conditions de fonctionnement ameliorees
JP6291895B2 (ja) * 2014-02-20 2018-03-14 富士通株式会社 赤外線検出器及びその製造方法
US9881966B2 (en) * 2015-07-17 2018-01-30 International Business Machines Corporation Three-dimensional integrated multispectral imaging sensor
US10763092B2 (en) * 2017-11-29 2020-09-01 L-3 Communications Corporation-Insight Technology Division Dual-spectrum photocathode for image intensification

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4206470A (en) * 1977-09-01 1980-06-03 Honeywell Inc. Thin film interconnect for multicolor IR/CCD
US4514755A (en) * 1983-07-08 1985-04-30 Fuji Photo Film Co., Ltd. Solid-state color imager with two layer three story structure
US5373182A (en) * 1993-01-12 1994-12-13 Santa Barbara Research Center Integrated IR and visible detector
US5552603A (en) * 1994-09-15 1996-09-03 Martin Marietta Corporation Bias and readout for multicolor quantum well detectors
FR2756667B1 (fr) * 1996-12-04 1999-02-19 Thomson Csf Detecteur d'ondes electromagnetiques bispectral
JP2002502120A (ja) * 1998-02-02 2002-01-22 ユニアックス コーポレイション 有機半導体製画像センサ
US6465860B2 (en) * 1998-09-01 2002-10-15 Kabushiki Kaisha Toshiba Multi-wavelength semiconductor image sensor and method of manufacturing the same
US6373117B1 (en) * 1999-05-03 2002-04-16 Agilent Technologies, Inc. Stacked multiple photosensor structure including independent electrical connections to each photosensor
JP4330210B2 (ja) * 1999-07-30 2009-09-16 富士通株式会社 光半導体装置及びその製造方法

Also Published As

Publication number Publication date
WO2004057675A1 (fr) 2004-07-08
EP1573821A1 (fr) 2005-09-14
US7352043B2 (en) 2008-04-01
FR2849273A1 (fr) 2004-06-25
US20060038251A1 (en) 2006-02-23

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Legal Events

Date Code Title Description
ST Notification of lapse

Effective date: 20150831