JP5881417B2 - マスクブランク用合成石英ガラス基板の複屈折仕様決定方法、マスクブランク用合成石英ガラス基板の製造方法、マスクブランクの製造方法、及び転写用マスクの製造方法 - Google Patents
マスクブランク用合成石英ガラス基板の複屈折仕様決定方法、マスクブランク用合成石英ガラス基板の製造方法、マスクブランクの製造方法、及び転写用マスクの製造方法 Download PDFInfo
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- JP5881417B2 JP5881417B2 JP2011290281A JP2011290281A JP5881417B2 JP 5881417 B2 JP5881417 B2 JP 5881417B2 JP 2011290281 A JP2011290281 A JP 2011290281A JP 2011290281 A JP2011290281 A JP 2011290281A JP 5881417 B2 JP5881417 B2 JP 5881417B2
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- glass substrate
- quartz glass
- synthetic quartz
- birefringence
- mask blank
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- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 title claims description 151
- 238000012546 transfer Methods 0.000 title claims description 77
- 238000004519 manufacturing process Methods 0.000 title claims description 51
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- 230000007547 defect Effects 0.000 claims description 130
- 238000002834 transmittance Methods 0.000 claims description 100
- 238000005259 measurement Methods 0.000 claims description 40
- 239000010409 thin film Substances 0.000 claims description 20
- 238000000059 patterning Methods 0.000 claims description 6
- 239000011521 glass Substances 0.000 description 64
- 239000010408 film Substances 0.000 description 38
- 230000010287 polarization Effects 0.000 description 25
- 239000000463 material Substances 0.000 description 22
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- 239000010410 layer Substances 0.000 description 9
- 239000004065 semiconductor Substances 0.000 description 8
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 7
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 7
- 239000011651 chromium Substances 0.000 description 7
- 229910052710 silicon Inorganic materials 0.000 description 7
- 239000010703 silicon Substances 0.000 description 7
- 229910052715 tantalum Inorganic materials 0.000 description 7
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 7
- 229910052723 transition metal Inorganic materials 0.000 description 6
- 150000003624 transition metals Chemical class 0.000 description 6
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 5
- 229910052804 chromium Inorganic materials 0.000 description 5
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 4
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- 229910052760 oxygen Inorganic materials 0.000 description 4
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 3
- 229910052799 carbon Inorganic materials 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 229910052757 nitrogen Inorganic materials 0.000 description 3
- 238000012360 testing method Methods 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- BVKZGUZCCUSVTD-UHFFFAOYSA-L Carbonate Chemical compound [O-]C([O-])=O BVKZGUZCCUSVTD-UHFFFAOYSA-L 0.000 description 2
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 2
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 2
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- 230000015572 biosynthetic process Effects 0.000 description 2
- 239000000460 chlorine Substances 0.000 description 2
- 238000010894 electron beam technology Methods 0.000 description 2
- 229910052735 hafnium Inorganic materials 0.000 description 2
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- 229910052750 molybdenum Inorganic materials 0.000 description 2
- 239000011733 molybdenum Substances 0.000 description 2
- 230000035699 permeability Effects 0.000 description 2
- 239000010453 quartz Substances 0.000 description 2
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- 229910052726 zirconium Inorganic materials 0.000 description 2
- ITWBWJFEJCHKSN-UHFFFAOYSA-N 1,4,7-triazonane Chemical compound C1CNCCNCCN1 ITWBWJFEJCHKSN-UHFFFAOYSA-N 0.000 description 1
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 1
- YZCKVEUIGOORGS-OUBTZVSYSA-N Deuterium Chemical compound [2H] YZCKVEUIGOORGS-OUBTZVSYSA-N 0.000 description 1
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 1
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 229910004535 TaBN Inorganic materials 0.000 description 1
- 229910003071 TaON Inorganic materials 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- QCWXUUIWCKQGHC-UHFFFAOYSA-N Zirconium Chemical compound [Zr] QCWXUUIWCKQGHC-UHFFFAOYSA-N 0.000 description 1
- 230000005856 abnormality Effects 0.000 description 1
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- 238000004458 analytical method Methods 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 229910052801 chlorine Inorganic materials 0.000 description 1
- 230000000052 comparative effect Effects 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
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- 229910052805 deuterium Inorganic materials 0.000 description 1
- 238000007687 exposure technique Methods 0.000 description 1
- 229910052731 fluorine Inorganic materials 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- VBJZVLUMGGDVMO-UHFFFAOYSA-N hafnium atom Chemical compound [Hf] VBJZVLUMGGDVMO-UHFFFAOYSA-N 0.000 description 1
- 238000003384 imaging method Methods 0.000 description 1
- 238000010884 ion-beam technique Methods 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
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- 229910052759 nickel Inorganic materials 0.000 description 1
- 229910052758 niobium Inorganic materials 0.000 description 1
- 239000010955 niobium Substances 0.000 description 1
- GUCVJGMIXFAOAE-UHFFFAOYSA-N niobium atom Chemical compound [Nb] GUCVJGMIXFAOAE-UHFFFAOYSA-N 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 238000005546 reactive sputtering Methods 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 229910052703 rhodium Inorganic materials 0.000 description 1
- 239000010948 rhodium Substances 0.000 description 1
- MHOVAHRLVXNVSD-UHFFFAOYSA-N rhodium atom Chemical compound [Rh] MHOVAHRLVXNVSD-UHFFFAOYSA-N 0.000 description 1
- 229910052707 ruthenium Inorganic materials 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 230000003595 spectral effect Effects 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- 229910052720 vanadium Inorganic materials 0.000 description 1
- GPPXJZIENCGNKB-UHFFFAOYSA-N vanadium Chemical compound [V]#[V] GPPXJZIENCGNKB-UHFFFAOYSA-N 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
- 229910052724 xenon Inorganic materials 0.000 description 1
- FHNFHKCVQCLJFQ-UHFFFAOYSA-N xenon atom Chemical compound [Xe] FHNFHKCVQCLJFQ-UHFFFAOYSA-N 0.000 description 1
Images
Landscapes
- Preparing Plates And Mask In Photomechanical Process (AREA)
- Investigating Or Analysing Materials By Optical Means (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2011290281A JP5881417B2 (ja) | 2011-12-29 | 2011-12-29 | マスクブランク用合成石英ガラス基板の複屈折仕様決定方法、マスクブランク用合成石英ガラス基板の製造方法、マスクブランクの製造方法、及び転写用マスクの製造方法 |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2011290281A JP5881417B2 (ja) | 2011-12-29 | 2011-12-29 | マスクブランク用合成石英ガラス基板の複屈折仕様決定方法、マスクブランク用合成石英ガラス基板の製造方法、マスクブランクの製造方法、及び転写用マスクの製造方法 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2013140237A JP2013140237A (ja) | 2013-07-18 |
| JP2013140237A5 JP2013140237A5 (enrdf_load_stackoverflow) | 2015-01-15 |
| JP5881417B2 true JP5881417B2 (ja) | 2016-03-09 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2011290281A Active JP5881417B2 (ja) | 2011-12-29 | 2011-12-29 | マスクブランク用合成石英ガラス基板の複屈折仕様決定方法、マスクブランク用合成石英ガラス基板の製造方法、マスクブランクの製造方法、及び転写用マスクの製造方法 |
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| Country | Link |
|---|---|
| JP (1) | JP5881417B2 (enrdf_load_stackoverflow) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP6084507B2 (ja) * | 2012-04-16 | 2017-02-22 | Hoya株式会社 | マスクブランク用基板の製造方法、マスクブランクの製造方法、転写用マスクの製造方法、及び半導体デバイスの製造方法 |
| JP6195777B2 (ja) * | 2013-10-22 | 2017-09-13 | Hoya株式会社 | 複屈折の測定方法、マスクブランク用基板の製造方法、マスクブランクの製造方法、転写用マスクの製造方法および半導体デバイスの製造方法 |
| JP6536185B2 (ja) | 2014-06-13 | 2019-07-03 | 信越化学工業株式会社 | 合成石英ガラス基板の製造方法 |
| JP6536192B2 (ja) * | 2015-06-10 | 2019-07-03 | 信越化学工業株式会社 | 合成石英ガラス基板の製造方法 |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2005255423A (ja) * | 2004-03-09 | 2005-09-22 | Asahi Glass Co Ltd | 合成石英ガラス製フォトマスク基板およびフォトマスク |
| JP2006251781A (ja) * | 2005-02-09 | 2006-09-21 | Asahi Glass Co Ltd | マスクブランクス |
| JP4692745B2 (ja) * | 2005-02-25 | 2011-06-01 | 株式会社ニコン | マスク基板、フォトマスク、露光方法、露光装置の管理方法、及びデバイス製造方法 |
| JP4675745B2 (ja) * | 2005-10-25 | 2011-04-27 | 株式会社東芝 | フォトマスク用基板の選別方法、フォトマスク作製方法及び半導体装置製造方法 |
| JP2008070730A (ja) * | 2006-09-15 | 2008-03-27 | Sony Corp | マスクブランクス選定方法、複屈折性指標の算出方法、リソグラフィ方法、マスクブランクス選定装置、複屈折性指標算出装置およびそのプログラム |
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- 2011-12-29 JP JP2011290281A patent/JP5881417B2/ja active Active
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| JP2013140237A (ja) | 2013-07-18 |
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