JP5861337B2 - 駆動回路、及び、光送信装置 - Google Patents
駆動回路、及び、光送信装置 Download PDFInfo
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- JP5861337B2 JP5861337B2 JP2011194924A JP2011194924A JP5861337B2 JP 5861337 B2 JP5861337 B2 JP 5861337B2 JP 2011194924 A JP2011194924 A JP 2011194924A JP 2011194924 A JP2011194924 A JP 2011194924A JP 5861337 B2 JP5861337 B2 JP 5861337B2
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- 238000010586 diagram Methods 0.000 description 24
- 230000000694 effects Effects 0.000 description 11
- 238000000034 method Methods 0.000 description 11
- 238000012986 modification Methods 0.000 description 8
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
- H01S5/042—Electrical excitation ; Circuits therefor
- H01S5/0428—Electrical excitation ; Circuits therefor for applying pulses to the laser
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
- H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
- H03K17/60—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being bipolar transistors
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
- H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
- H03K17/687—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors
- H03K17/6871—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors the output circuit comprising more than one controlled field-effect transistor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
- H01S5/062—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes
- H01S5/06209—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes in single-section lasers
- H01S5/06216—Pulse modulation or generation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
- H01S5/062—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes
- H01S5/06226—Modulation at ultra-high frequencies
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
- H01S5/068—Stabilisation of laser output parameters
- H01S5/0683—Stabilisation of laser output parameters by monitoring the optical output parameters
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- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Amplifiers (AREA)
- Semiconductor Lasers (AREA)
Description
なお、駆動回路3aにおいて、端子T1a及び端子T2aは、差動終端ではなくそれぞれが独立に終端されていてもよい。
以上のように、光送信装置1は、入力信号に対して電流Ipを出力する(LD駆動電流を吐き出す)ハイサイドドライバと、電流Inを引き込む(LD駆動電流を引き込む)ローサイドドライバとが併用されたプッシュプル構成を有する。光送信装置1のハイサイドドライバは、N型トランジスタであるトランジスタM1(NMOS)のソース接地増幅回路にカスコード接続されているP型トランジスタであるトランジスタM2(PMOS)とからなる。光送信装置1のローサイドドライバは、N型トランジスタであるNMOSのトランジスタM3(又はNPNのトランジスタQ3)からなる。これにより、低消費電力で高速高利得な光送信が実現できる。しかし、上記した光送信装置1の回路構成では、ハイサイドドライバの相互コンダクタンスgmsがトランジスタM1(NMOS)の大きさから見積もられる値よりも減ぜられるので、利得を高める効果が限定的になる場合がある。そこで、次に、ハイサイドドライバの相互コンダクタンスgmsを改善できるような光送信装置1の駆動回路3の構成について説明する。
Claims (6)
- 差動信号の入力に応じて発光素子の駆動電流を増減する駆動回路であって、
前記差動信号の正相成分が入力される第1の信号端子と、
前記差動信号の逆相成分が入力される第2の信号端子と、
前記発光素子が備える前記駆動電流の入力端子に接続されている接続端子と、
前記第1の信号端子及び前記接続端子に接続されており、第1の電圧にバイアスされた前記正相成分に応じて前記駆動電流を増加させるように前記接続端子を介して前記駆動電流を制御する第1の回路と、
前記第2の信号端子及び前記接続端子に接続されており、前記第1の電圧よりも低い第2の電圧にバイアスされた前記逆相成分に応じて前記駆動電流を減少させるように前記接続端子を介して前記駆動電流を制御する第2の回路と、
を備える、駆動回路。 - 前記第1の回路は、前記第1の電圧にバイアスされた前記正相成分で駆動される第1のN型トランジスタと、該第1のN型トランジスタに直列に接続されたP型トランジスタとを有し、
前記第2の回路は、前記第2の電圧にバイアスされた前記逆相成分で駆動される第2のN型トランジスタを有し、
前記P型トランジスタの一方の電流端子と前記第2のN型トランジスタの一方の電流端子とが前記接続端子に接続されている、請求項1に記載の駆動回路。 - 前記P型トランジスタは、第3の電圧にバイアスされた前記逆相成分により駆動される、請求項2に記載の駆動回路。
- 前記第1のN型トランジスタを駆動する前記正相成分は、当該駆動回路の内部にて前記第1の電圧にバイアスされ、
前記第2のN型トランジスタを駆動する前記逆相成分は、当該駆動回路の内部にて前記第2の電圧にバイアスされる、請求項2又は3に記載の駆動回路。 - 前記入力端子を有し、前記駆動電流に応じて光信号を出力する発光素子と、
前記接続端子が前記入力端子に接続されている請求項1〜請求項4の何れか一項に記載の駆動回路と、
を備える、光送信装置。 - 前記入力端子にインダクタを介して接続されているバイアス電流源を更に備える、請求項5に記載の光送信装置。
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2011194924A JP5861337B2 (ja) | 2010-10-28 | 2011-09-07 | 駆動回路、及び、光送信装置 |
US13/282,131 US8571078B2 (en) | 2010-10-28 | 2011-10-26 | Laser driver and optical transmitter implementing the same |
US13/689,292 US8649406B2 (en) | 2010-10-28 | 2012-11-29 | Shunt driver circuit for laser diode with push pull architecture |
US13/830,085 US8737442B2 (en) | 2010-10-28 | 2013-03-14 | Driver circuit for laser diode outputting pre-emphasized signal |
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2010242342 | 2010-10-28 | ||
JP2010242342 | 2010-10-28 | ||
JP2011194924A JP5861337B2 (ja) | 2010-10-28 | 2011-09-07 | 駆動回路、及び、光送信装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2012109940A JP2012109940A (ja) | 2012-06-07 |
JP5861337B2 true JP5861337B2 (ja) | 2016-02-16 |
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Application Number | Title | Priority Date | Filing Date |
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JP2011194924A Active JP5861337B2 (ja) | 2010-10-28 | 2011-09-07 | 駆動回路、及び、光送信装置 |
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US (1) | US8571078B2 (ja) |
JP (1) | JP5861337B2 (ja) |
Families Citing this family (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2015117217A1 (en) * | 2014-02-06 | 2015-08-13 | Ghannouchi Fadhel M | High efficiency ultra-wideband amplifier |
CN103928842B (zh) * | 2014-04-23 | 2016-06-08 | 福建一丁芯半导体股份有限公司 | 采用负电容中和技术的高速激光二极管驱动器集成电路 |
US11070026B2 (en) | 2019-07-19 | 2021-07-20 | Analog Devices International Unlimited Company | High current nanosecond laser driver circuit with wide pulse-width adjustment range |
US11075502B2 (en) | 2019-08-29 | 2021-07-27 | Analog Devices, Inc. | Laser diode driver circuit techniques |
US11601202B2 (en) * | 2020-07-01 | 2023-03-07 | Macom Technology Solutions Holdings, Inc. | Active bias circuit |
JPWO2023032143A1 (ja) * | 2021-09-03 | 2023-03-09 | ||
JPWO2023032144A1 (ja) * | 2021-09-03 | 2023-03-09 |
Family Cites Families (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS57168319A (en) * | 1981-04-09 | 1982-10-16 | Fujitsu Ltd | Parallel output buffer circuit |
JPH0645547A (ja) * | 1992-07-23 | 1994-02-18 | Nec Corp | 入出力インターフェース回路 |
JPH06197001A (ja) * | 1992-12-24 | 1994-07-15 | Toshiba Corp | レベル変換回路 |
US5546218A (en) * | 1994-03-18 | 1996-08-13 | Fujitsu Limited | Drive circuit of a simiconductor optical modulator |
US5808956A (en) * | 1995-12-20 | 1998-09-15 | Seiko Epson Corporation | Bus-line drive circuit and semiconductor storage device comprising the same |
JP3580062B2 (ja) * | 1995-12-20 | 2004-10-20 | セイコーエプソン株式会社 | バスライン駆動回路およびこれを具備する半導体記憶装置 |
JP2005033019A (ja) * | 2003-07-04 | 2005-02-03 | Sumitomo Electric Ind Ltd | 発光モジュール |
JP2011023474A (ja) | 2009-07-14 | 2011-02-03 | Sumitomo Electric Ind Ltd | 半導体レーザ駆動回路 |
JP2011142173A (ja) * | 2010-01-06 | 2011-07-21 | Sumitomo Electric Ind Ltd | 制御回路及びレーザダイオード駆動回路 |
-
2011
- 2011-09-07 JP JP2011194924A patent/JP5861337B2/ja active Active
- 2011-10-26 US US13/282,131 patent/US8571078B2/en active Active
Also Published As
Publication number | Publication date |
---|---|
US20120106981A1 (en) | 2012-05-03 |
US8571078B2 (en) | 2013-10-29 |
JP2012109940A (ja) | 2012-06-07 |
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