JP5858770B2 - 基板処理システム - Google Patents

基板処理システム Download PDF

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Publication number
JP5858770B2
JP5858770B2 JP2011277349A JP2011277349A JP5858770B2 JP 5858770 B2 JP5858770 B2 JP 5858770B2 JP 2011277349 A JP2011277349 A JP 2011277349A JP 2011277349 A JP2011277349 A JP 2011277349A JP 5858770 B2 JP5858770 B2 JP 5858770B2
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JP
Japan
Prior art keywords
processing
liquid
active species
substrate
etching
Prior art date
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Active
Application number
JP2011277349A
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English (en)
Japanese (ja)
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JP2013128063A5 (zh
JP2013128063A (ja
Inventor
林　航之介
航之介 林
絵美 松井
絵美 松井
晴香 中野
晴香 中野
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Shibaura Mechatronics Corp
Original Assignee
Shibaura Mechatronics Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Shibaura Mechatronics Corp filed Critical Shibaura Mechatronics Corp
Priority to JP2011277349A priority Critical patent/JP5858770B2/ja
Priority to TW101143242A priority patent/TWI502673B/zh
Priority to KR1020120142832A priority patent/KR101399801B1/ko
Priority to CN201210544384.4A priority patent/CN103165411B/zh
Publication of JP2013128063A publication Critical patent/JP2013128063A/ja
Publication of JP2013128063A5 publication Critical patent/JP2013128063A5/ja
Application granted granted Critical
Publication of JP5858770B2 publication Critical patent/JP5858770B2/ja
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/30604—Chemical etching
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K13/00—Etching, surface-brightening or pickling compositions
    • C09K13/04—Etching, surface-brightening or pickling compositions containing an inorganic acid
    • C09K13/08—Etching, surface-brightening or pickling compositions containing an inorganic acid containing a fluorine compound
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67242—Apparatus for monitoring, sorting or marking
    • H01L21/67253—Process monitoring, e.g. flow or thickness monitoring

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  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Inorganic Chemistry (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Weting (AREA)
JP2011277349A 2011-12-19 2011-12-19 基板処理システム Active JP5858770B2 (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP2011277349A JP5858770B2 (ja) 2011-12-19 2011-12-19 基板処理システム
TW101143242A TWI502673B (zh) 2011-12-19 2012-11-20 Substrate processing method and substrate processing system
KR1020120142832A KR101399801B1 (ko) 2011-12-19 2012-12-10 기판 처리 방법 및 기판 처리 시스템
CN201210544384.4A CN103165411B (zh) 2011-12-19 2012-12-14 基板处理方法以及基板处理系统

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2011277349A JP5858770B2 (ja) 2011-12-19 2011-12-19 基板処理システム

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2015216054A Division JP6139634B2 (ja) 2015-11-02 2015-11-02 基板処理方法及び基板処理システム

Publications (3)

Publication Number Publication Date
JP2013128063A JP2013128063A (ja) 2013-06-27
JP2013128063A5 JP2013128063A5 (zh) 2015-07-09
JP5858770B2 true JP5858770B2 (ja) 2016-02-10

Family

ID=48588398

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2011277349A Active JP5858770B2 (ja) 2011-12-19 2011-12-19 基板処理システム

Country Status (4)

Country Link
JP (1) JP5858770B2 (zh)
KR (1) KR101399801B1 (zh)
CN (1) CN103165411B (zh)
TW (1) TWI502673B (zh)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104347385A (zh) * 2013-07-23 2015-02-11 中芯国际集成电路制造(上海)有限公司 一种半导体器件的选择性刻蚀方法及bsi图像传感器制作方法
JP6352143B2 (ja) * 2013-11-13 2018-07-04 東京エレクトロン株式会社 基板液処理装置及び基板液処理方法
JP6324775B2 (ja) * 2014-03-17 2018-05-16 株式会社Ｓｃｒｅｅｎホールディングス 基板処理装置および基板処理装置を用いた基板処理方法
TWI630652B (zh) * 2014-03-17 2018-07-21 斯克林集團公司 基板處理裝置及使用基板處理裝置之基板處理方法
JP6499414B2 (ja) 2014-09-30 2019-04-10 株式会社Ｓｃｒｅｅｎホールディングス 基板処理装置
JP6903446B2 (ja) * 2016-03-07 2021-07-14 芝浦メカトロニクス株式会社 基板処理装置及び基板処理方法
CN106449688A (zh) * 2016-10-28 2017-02-22 中国电子科技集团公司第四十四研究所 制作光敏区布线层的方法
JP7471182B2 (ja) 2020-09-11 2024-04-19 株式会社Ｓｃｒｅｅｎホールディングス 基板処理装置および基板処理方法

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH1126425A (ja) * 1997-06-30 1999-01-29 Sumitomo Metal Ind Ltd 半導体基板のエッチング方法及びその装置
JP3653416B2 (ja) * 1999-05-19 2005-05-25 沖電気工業株式会社 エッチング方法およびエッチング装置
JP2000338684A (ja) 1999-05-26 2000-12-08 Nagase & Co Ltd 基板表面処理装置
TW543080B (en) * 1999-10-26 2003-07-21 Fab Solutions Inc Semiconductor device
DE10248481B4 (de) * 2002-10-17 2006-04-27 Siltronic Ag Verfahren und Vorrichtung zur nasschemischen Behandlung von Silicium
KR100693252B1 (ko) * 2005-04-13 2007-03-13 삼성전자주식회사 기판 처리 장치, 기판 세정 장치 및 방법
JP2007251081A (ja) * 2006-03-20 2007-09-27 Dainippon Screen Mfg Co Ltd 基板処理方法
JP2008066351A (ja) * 2006-09-05 2008-03-21 Dainippon Screen Mfg Co Ltd 基板処理装置
JP4901650B2 (ja) * 2007-08-31 2012-03-21 東京エレクトロン株式会社 液処理装置、液処理方法および記憶媒体

Also Published As

Publication number Publication date
TWI502673B (zh) 2015-10-01
CN103165411A (zh) 2013-06-19
KR101399801B1 (ko) 2014-05-27
TW201330153A (zh) 2013-07-16
KR20130070528A (ko) 2013-06-27
CN103165411B (zh) 2016-08-03
JP2013128063A (ja) 2013-06-27

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