JP5855410B2 - 窒化アルミニウム膜の形成方法 - Google Patents
窒化アルミニウム膜の形成方法 Download PDFInfo
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- JP5855410B2 JP5855410B2 JP2011214602A JP2011214602A JP5855410B2 JP 5855410 B2 JP5855410 B2 JP 5855410B2 JP 2011214602 A JP2011214602 A JP 2011214602A JP 2011214602 A JP2011214602 A JP 2011214602A JP 5855410 B2 JP5855410 B2 JP 5855410B2
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- flow rate
- film
- aluminum nitride
- nitrogen gas
- gas
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- 238000000034 method Methods 0.000 title claims description 67
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 title claims description 41
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 67
- 229910001873 dinitrogen Inorganic materials 0.000 claims description 52
- 230000007704 transition Effects 0.000 claims description 40
- 230000008569 process Effects 0.000 claims description 34
- 239000007789 gas Substances 0.000 claims description 30
- 239000011261 inert gas Substances 0.000 claims description 24
- 238000004544 sputter deposition Methods 0.000 claims description 23
- 239000000758 substrate Substances 0.000 claims description 9
- 230000015572 biosynthetic process Effects 0.000 claims description 8
- 230000003247 decreasing effect Effects 0.000 claims description 7
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 3
- 229910052782 aluminium Inorganic materials 0.000 claims description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 14
- 238000001878 scanning electron micrograph Methods 0.000 description 10
- 229910052757 nitrogen Inorganic materials 0.000 description 8
- 229910052786 argon Inorganic materials 0.000 description 7
- 238000004519 manufacturing process Methods 0.000 description 7
- 238000000089 atomic force micrograph Methods 0.000 description 6
- 239000012528 membrane Substances 0.000 description 6
- 238000005240 physical vapour deposition Methods 0.000 description 5
- 238000005530 etching Methods 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- 230000007547 defect Effects 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 238000001459 lithography Methods 0.000 description 2
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- AZDRQVAHHNSJOQ-UHFFFAOYSA-N alumane Chemical group [AlH3] AZDRQVAHHNSJOQ-UHFFFAOYSA-N 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- -1 nitrogen ions Chemical class 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
Landscapes
- Physical Vapour Deposition (AREA)
Description
図1は、第一実施形態に係るデバイスの製造装置100の断面図である。製造装置100は、スパッタリング処理用のチャンバ101と、チャンバ101内に配された、被処理基板(被処理体)103の支持台104と、支持台104の温度を制御する手段Tと、チャンバ101内に配されたアルミニウム(Al)からなるターゲット102と、支持台104とターゲット102との間に電圧を印加する手段(電圧印加手段)Eとを備えている。
Claims (1)
- 基体の一面にスパッタリング法により窒化アルミニウム膜を形成する方法であって、
前記窒化アルミニウム膜を形成する際に、アルミニウムからなるターゲットと、不活性ガスに窒素ガスを混合させてなるプロセスガスとを、少なくとも用い、
前記不活性ガスの流量に対する前記窒素ガスの流量の比率が増えるにつれて、成膜時真空度が安定傾向から増加傾向へ移行する点A、および、成膜時電圧が減少傾向から安定傾向へ移行する点Bを決定する工程を行い、次いで、前記点Aと前記点Bとの間を遷移モード、と定義したとき、(1)前記遷移モードで成膜する、(2)前記遷移モードより低い、前記不活性ガスの流量に対する前記窒素ガスの流量の比率において成膜する、(3)前記遷移モードより高い、前記不活性ガスの流量に対する前記窒素ガスの流量の比率において成膜する、のうちの何れかを選択して成膜することを特徴とする窒化アルミニウム膜の形成方法。
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JP2011214602A JP5855410B2 (ja) | 2011-09-29 | 2011-09-29 | 窒化アルミニウム膜の形成方法 |
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JP2011214602A JP5855410B2 (ja) | 2011-09-29 | 2011-09-29 | 窒化アルミニウム膜の形成方法 |
Publications (2)
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JP2013072134A JP2013072134A (ja) | 2013-04-22 |
JP5855410B2 true JP5855410B2 (ja) | 2016-02-09 |
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JP2011214602A Active JP5855410B2 (ja) | 2011-09-29 | 2011-09-29 | 窒化アルミニウム膜の形成方法 |
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JP (1) | JP5855410B2 (ja) |
Family Cites Families (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6342134B1 (en) * | 2000-02-11 | 2002-01-29 | Agere Systems Guardian Corp. | Method for producing piezoelectric films with rotating magnetron sputtering system |
JP3866615B2 (ja) * | 2002-05-29 | 2007-01-10 | 株式会社神戸製鋼所 | 反応性スパッタリング方法及び装置 |
JP2006130375A (ja) * | 2004-11-02 | 2006-05-25 | Bridgestone Corp | 水素貯蔵及び発生用触媒構造体並びにそれを用いた水素の貯蔵及び発生方法 |
JP2008047762A (ja) * | 2006-08-18 | 2008-02-28 | Showa Denko Kk | Iii族窒化物化合物半導体発光素子の製造方法、及びiii族窒化物化合物半導体発光素子、並びにランプ |
JP2010018864A (ja) * | 2008-07-11 | 2010-01-28 | Kobe Steel Ltd | 導電性薄膜 |
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