JP5851599B2 - パワーモジュール - Google Patents
パワーモジュール Download PDFInfo
- Publication number
- JP5851599B2 JP5851599B2 JP2014515561A JP2014515561A JP5851599B2 JP 5851599 B2 JP5851599 B2 JP 5851599B2 JP 2014515561 A JP2014515561 A JP 2014515561A JP 2014515561 A JP2014515561 A JP 2014515561A JP 5851599 B2 JP5851599 B2 JP 5851599B2
- Authority
- JP
- Japan
- Prior art keywords
- control board
- heat
- semiconductor element
- power module
- power semiconductor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 239000004065 semiconductor Substances 0.000 claims description 105
- 230000000903 blocking effect Effects 0.000 claims description 48
- 239000000463 material Substances 0.000 claims description 14
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims description 5
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 claims description 3
- 239000010432 diamond Substances 0.000 claims description 3
- 229910003460 diamond Inorganic materials 0.000 claims description 3
- 230000002093 peripheral effect Effects 0.000 claims description 3
- 229910010271 silicon carbide Inorganic materials 0.000 claims description 2
- 229910002601 GaN Inorganic materials 0.000 claims 1
- 238000000034 method Methods 0.000 description 19
- 230000017525 heat dissipation Effects 0.000 description 15
- 230000005855 radiation Effects 0.000 description 12
- 239000000758 substrate Substances 0.000 description 10
- 238000010586 diagram Methods 0.000 description 7
- 229910052782 aluminium Inorganic materials 0.000 description 6
- 238000009413 insulation Methods 0.000 description 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 4
- 229910052751 metal Inorganic materials 0.000 description 4
- 239000002184 metal Substances 0.000 description 4
- 229910052710 silicon Inorganic materials 0.000 description 4
- 239000010703 silicon Substances 0.000 description 4
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 3
- 229910052802 copper Inorganic materials 0.000 description 3
- 239000010949 copper Substances 0.000 description 3
- 239000004734 Polyphenylene sulfide Substances 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000000945 filler Substances 0.000 description 2
- 229920000069 polyphenylene sulfide Polymers 0.000 description 2
- 239000011347 resin Substances 0.000 description 2
- 229920005989 resin Polymers 0.000 description 2
- 239000003566 sealing material Substances 0.000 description 2
- 229910000679 solder Inorganic materials 0.000 description 2
- 229910016525 CuMo Inorganic materials 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- WUUZKBJEUBFVMV-UHFFFAOYSA-N copper molybdenum Chemical compound [Cu].[Mo] WUUZKBJEUBFVMV-UHFFFAOYSA-N 0.000 description 1
- 230000006378 damage Effects 0.000 description 1
- 230000020169 heat generation Effects 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Images
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/07—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L29/00
- H01L25/072—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L29/00 the devices being arranged next to each other
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48135—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
- H01L2224/48137—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being arranged next to each other, e.g. on a common substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/13—Discrete devices, e.g. 3 terminal devices
- H01L2924/1304—Transistor
- H01L2924/1305—Bipolar Junction Transistor [BJT]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/13—Discrete devices, e.g. 3 terminal devices
- H01L2924/1304—Transistor
- H01L2924/1305—Bipolar Junction Transistor [BJT]
- H01L2924/13055—Insulated gate bipolar transistor [IGBT]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/13—Discrete devices, e.g. 3 terminal devices
- H01L2924/1304—Transistor
- H01L2924/1306—Field-effect transistor [FET]
- H01L2924/13091—Metal-Oxide-Semiconductor Field-Effect Transistor [MOSFET]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2014515561A JP5851599B2 (ja) | 2012-05-18 | 2013-04-26 | パワーモジュール |
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2012113957 | 2012-05-18 | ||
JP2012113957 | 2012-05-18 | ||
PCT/JP2013/062372 WO2013172183A1 (fr) | 2012-05-18 | 2013-04-26 | Module de puissance |
JP2014515561A JP5851599B2 (ja) | 2012-05-18 | 2013-04-26 | パワーモジュール |
Publications (2)
Publication Number | Publication Date |
---|---|
JPWO2013172183A1 JPWO2013172183A1 (ja) | 2016-01-12 |
JP5851599B2 true JP5851599B2 (ja) | 2016-02-03 |
Family
ID=49583592
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2014515561A Active JP5851599B2 (ja) | 2012-05-18 | 2013-04-26 | パワーモジュール |
Country Status (2)
Country | Link |
---|---|
JP (1) | JP5851599B2 (fr) |
WO (1) | WO2013172183A1 (fr) |
Families Citing this family (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2014050389A1 (fr) * | 2012-09-27 | 2014-04-03 | 富士電機株式会社 | Module à semi-conducteurs de puissance |
WO2016031052A1 (fr) * | 2014-08-29 | 2016-03-03 | 三菱電機株式会社 | Dispositif à semi-conducteur et dispositif à semi-conducteur polyphasé |
WO2016063353A1 (fr) * | 2014-10-21 | 2016-04-28 | 株式会社安川電機 | Dispositif de commande de moteur et système de robot |
JP6737166B2 (ja) * | 2016-12-21 | 2020-08-05 | 住友電気工業株式会社 | 半導体モジュール |
EP3462822A1 (fr) * | 2017-09-29 | 2019-04-03 | Siemens Aktiengesellschaft | Convertisseur électrique |
WO2019142253A1 (fr) * | 2018-01-17 | 2019-07-25 | 新電元工業株式会社 | Module électronique |
WO2022239154A1 (fr) * | 2021-05-12 | 2022-11-17 | 三菱電機株式会社 | Module de puissance et dispositif de conversion de puissance |
Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3466329B2 (ja) * | 1995-06-16 | 2003-11-10 | 三菱電機株式会社 | 半導体パワーモジュール |
JP3521785B2 (ja) * | 1999-02-05 | 2004-04-19 | 株式会社日立製作所 | 樹脂封止した半導体装置 |
JP4163360B2 (ja) * | 2000-02-21 | 2008-10-08 | 三菱電機株式会社 | パワーモジュール |
JP5230213B2 (ja) * | 2007-09-26 | 2013-07-10 | ローム株式会社 | 半導体装置 |
-
2013
- 2013-04-26 JP JP2014515561A patent/JP5851599B2/ja active Active
- 2013-04-26 WO PCT/JP2013/062372 patent/WO2013172183A1/fr active Application Filing
Also Published As
Publication number | Publication date |
---|---|
WO2013172183A1 (fr) | 2013-11-21 |
JPWO2013172183A1 (ja) | 2016-01-12 |
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