JP5851599B2 - Power module - Google Patents

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JP5851599B2
JP5851599B2 JP2014515561A JP2014515561A JP5851599B2 JP 5851599 B2 JP5851599 B2 JP 5851599B2 JP 2014515561 A JP2014515561 A JP 2014515561A JP 2014515561 A JP2014515561 A JP 2014515561A JP 5851599 B2 JP5851599 B2 JP 5851599B2
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control board
heat
semiconductor element
power module
power semiconductor
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JPWO2013172183A1 (en
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宏之 和久
宏之 和久
幸司 吉瀬
幸司 吉瀬
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Mitsubishi Electric Corp
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
    • H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/07—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L29/00
    • H01L25/072—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L29/00 the devices being arranged next to each other
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48135—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
    • H01L2224/48137—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being arranged next to each other, e.g. on a common substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/13—Discrete devices, e.g. 3 terminal devices
    • H01L2924/1304—Transistor
    • H01L2924/1305—Bipolar Junction Transistor [BJT]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/13—Discrete devices, e.g. 3 terminal devices
    • H01L2924/1304—Transistor
    • H01L2924/1305—Bipolar Junction Transistor [BJT]
    • H01L2924/13055—Insulated gate bipolar transistor [IGBT]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/13—Discrete devices, e.g. 3 terminal devices
    • H01L2924/1304—Transistor
    • H01L2924/1306—Field-effect transistor [FET]
    • H01L2924/13091—Metal-Oxide-Semiconductor Field-Effect Transistor [MOSFET]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181—Encapsulation

Description

本発明は、パワー半導体素子と制御基板を同一のパッケージ内に配置したパワーモジュールに関するものである。   The present invention relates to a power module in which a power semiconductor element and a control board are arranged in the same package.

従来のパワー半導体素子と制御基板を同一パッケージ内に配置したパワーモジュールは、パワー半導体素子が高温となる。制御基板は、パワー半導体素子から入熱すること及びパワー半導体素子に対向した面からは放熱できないことにより、温度が著しく上昇し、制御基板自体もしくは制御基板に搭載された制御ＩＣ（Ｉｎｔｅｇｒａｔｅｄ Ｃｉｒｃｕｉｔ）が破壊してしまう可能性がある。そのため、パワー半導体素子から制御基板内への入熱を減らすか、制御基板の放熱性の向上が必要となる。そこで、パワー半導体素子と制御基板の間に熱遮断部材を設けることで、パワー半導体素子から制御基板への熱を遮断する技術がある。（例えば特許文献１、特許文献２）。   In a power module in which a conventional power semiconductor element and a control board are arranged in the same package, the power semiconductor element becomes hot. Since the control board receives heat from the power semiconductor element and cannot radiate heat from the surface facing the power semiconductor element, the temperature rises remarkably, and the control board itself or a control IC (Integrated Circuit) mounted on the control board There is a possibility of destruction. Therefore, it is necessary to reduce heat input from the power semiconductor element into the control board or to improve the heat dissipation of the control board. Therefore, there is a technique for blocking heat from the power semiconductor element to the control board by providing a heat blocking member between the power semiconductor element and the control board. (For example, Patent Document 1 and Patent Document 2).

特許文献１には、ベース板上にパワー半導体素子（特許文献１のパワーモジュール２）が実装されると共にこのパワー半導体素子と制御基板とがカバー内に配置され、パワー半導体素子と制御基板との間に第１の熱遮断部材、第２の熱遮断部材、断熱層を備えた半導体装置が記載されている。特許文献１の半導体装置は、パワー半導体素子と制御基板を同一のパッケージ内に配置したパワーモジュールに相当する。特許文献１の半導体装置は、ベース板上のパワー半導体素子を覆うように配置される第１の熱遮断部材と、第１の熱遮断部材の上面を覆うように配置される第２の熱遮断部材と、第１の熱遮断部材と第２の熱遮断部材の間に形成された断熱層を備え、第１の熱遮断部材及び第２の熱遮断部材のうち少なくとも一方を熱伝導性の優れた材料により形成してその下端部でベース板に接触させて固定すると共に、制御基板を第２の熱遮断部材の上に配置していた。このような構成により、パワー半導体素子から制御基板への伝熱を、第１の熱遮断部材、第２の熱遮断部材、断熱層によって遮断するようにしていた。   In Patent Document 1, a power semiconductor element (power module 2 of Patent Document 1) is mounted on a base plate, and the power semiconductor element and a control board are arranged in a cover. A semiconductor device including a first heat blocking member, a second heat blocking member, and a heat insulating layer is described. The semiconductor device of Patent Document 1 corresponds to a power module in which a power semiconductor element and a control board are arranged in the same package. The semiconductor device disclosed in Patent Literature 1 includes a first heat blocking member disposed so as to cover the power semiconductor element on the base plate, and a second heat blocking member disposed so as to cover the upper surface of the first heat blocking member. A heat insulating layer formed between the member and the first heat blocking member and the second heat blocking member, and at least one of the first heat blocking member and the second heat blocking member has excellent thermal conductivity The control board is disposed on the second heat shielding member while being fixed to the base plate at the lower end thereof by contacting with the base plate. With such a configuration, heat transfer from the power semiconductor element to the control board is blocked by the first heat blocking member, the second heat blocking member, and the heat insulating layer.

特許文献２には、放熱板上にパワー半導体素子（特許文献２の電力用半導体素子１）が実装されると共にこのパワー半導体素子と制御基板とがケース内に配置され、パワー半導体素子と制御基板との間に、パワー半導体素子の発熱をケース外部に伝達する面方向の熱抵抗が厚み方向のそれより低い熱遮断シート材を備えたパワーモジュールが記載されている。特許文献２のパワーモジュールは、熱遮蔽シート材の端部が放熱板の上部に接続され、ケース内にゲル状充填物が充填され、ゲル状充填物を伝導してきたパワー半導体素子の熱が熱遮蔽シート材の厚さ方向に配置された制御回路を温度上昇させる前に、その熱を面方向へ輸送するようにしていた。   In Patent Document 2, a power semiconductor element (power semiconductor element 1 of Patent Document 2) is mounted on a heat sink, and the power semiconductor element and a control board are disposed in a case. In the meantime, there is described a power module including a heat shielding sheet material in which the heat resistance in the surface direction for transmitting heat generated by the power semiconductor element to the outside of the case is lower than that in the thickness direction. In the power module of Patent Document 2, the end of the heat shielding sheet material is connected to the upper part of the radiator plate, the case is filled with the gel-like filler, and the heat of the power semiconductor element that has conducted the gel-like filler is heated. Prior to raising the temperature of the control circuit arranged in the thickness direction of the shielding sheet material, the heat is transported in the surface direction.

特開２００６−３３９３５２号公報（０００５段〜００１２段、図１）JP 2006-339352 A (0005 to 0012 stages, FIG. 1) 特開２００３−２９８００９号公報（０００７段〜００１９段、図１）Japanese Patent Laying-Open No. 2003-298209 (0007 to 0019, FIG. 1)

パワー半導体素子から制御基板への空気を介した熱の移動には、熱伝導、対流、輻射がある。制御基板をパワー半導体素子に対して、平行に配置した従来の構造では、パワー半導体素子に対して、制御基板が対面する面積が大きいため、パワー半導体素子からの熱の移動量が非常に大きい。また、制御基板とパワー半導体素子との間に熱がこもり、パワー半導体素子近傍の空気温度が上昇し、パワー半導体素子の温度が上昇するといった課題があった。   Heat transfer via air from the power semiconductor element to the control board includes heat conduction, convection, and radiation. In the conventional structure in which the control board is arranged in parallel to the power semiconductor element, the area of the control board facing the power semiconductor element is large, and thus the amount of heat transferred from the power semiconductor element is very large. Further, there is a problem that heat is accumulated between the control board and the power semiconductor element, the air temperature in the vicinity of the power semiconductor element is increased, and the temperature of the power semiconductor element is increased.

特許文献１のパワーモジュールは、ベース板が高温となった場合に、第２の熱遮断部材はベース板から熱が伝わり、温度が上昇する。また、特許文献２のパワーモジュールも、同様に放熱板が高温となった場合に、熱遮蔽シート材は放熱板から熱が伝わり、温度が上昇する。したがって、従来のパワーモジュールは、熱遮断部材や熱遮蔽シート材から制御基板に入熱する可能性があった。さらに、熱遮断部材や熱遮蔽シート材を用いることで、構造が複雑になり、コストや工数が増えるという問題点もあった。   In the power module of Patent Document 1, when the base plate becomes high temperature, the second heat blocking member receives heat from the base plate, and the temperature rises. Similarly, in the power module of Patent Document 2, when the heat dissipation plate becomes high in temperature, the heat shielding sheet material receives heat from the heat dissipation plate and the temperature rises. Therefore, there is a possibility that the conventional power module receives heat from the heat shielding member or the heat shielding sheet material to the control board. Further, the use of the heat shielding member or the heat shielding sheet material complicates the structure and increases the cost and man-hours.

また、制御基板を複数搭載したパワーモジュールも考えられる。従来のパワーモジュールは、複数の制御基板間の熱遮断と放熱性の向上については考慮されていない。例えば、パワー半導体素子に対して複数の制御基板を平行に配置した場合、制御基板に搭載された制御ＩＣ等の発熱により制御基板の温度が上昇し、さらに他の制御基板から入熱することで、制御基板の放熱が十分にできない問題点があった。   A power module having a plurality of control boards can also be considered. The conventional power module does not consider the heat insulation between a plurality of control boards and the improvement of heat dissipation. For example, when a plurality of control boards are arranged in parallel to the power semiconductor element, the temperature of the control board rises due to heat generated by a control IC or the like mounted on the control board, and heat is input from another control board. There was a problem that the heat radiation of the control board could not be sufficiently performed.

本発明は、上記のような問題点を解決するためになされたものであり、制御基板に対してパワー半導体素子や他の制御基板からの入熱を減らし、制御基板の放熱性を向上させることで、制御基板の温度を低下させ、信頼性の高いパワーモジュールを得ることを目的としている。   The present invention has been made to solve the above-described problems, and reduces heat input from the power semiconductor element and other control boards to the control board, thereby improving the heat dissipation of the control board. Thus, the object is to reduce the temperature of the control board and obtain a highly reliable power module.

本発明のパワーモジュールは、ベース板に実装されたパワー半導体素子とパワー半導体素子を制御する複数の制御基板とがケース内に配置されたパワーモジュールであって、ベース板におけるパワー半導体素子が実装された実装面に対して略垂直に配置された複数の制御基板と、ケースの上部に設けられた熱遮断部材を備え、一の制御基板は、少なくとも一つの他の制御基板に対して略垂直に配置され、熱遮断部材は、一の制御基板と少なくとも一つの他の制御基板との間に延伸して配置されたことを特徴とする。 Power module of the present invention is a power module and the control board of the multiple is disposed within the case that controls the power semiconductor element and the power semiconductor element mounted on the base plate, the power in base over scan plate semiconductor A plurality of control boards arranged substantially perpendicular to the mounting surface on which the element is mounted, and a heat shielding member provided on the upper part of the case, one control board being at least one other control board The heat blocking member is arranged to extend between one control board and at least one other control board .

本発明のパワーモジュールによれば、複数の制御基板がベース板の実装面に対して略垂直に配置されたので、制御基板におけるパワー半導体素子に対面する面積が減少でき、パワー半導体素子からの熱伝導と輻射による熱の移動が減少することができる。また、本発明のパワーモジュールによれば、パワー半導体素子の上方の空間が広くできるため、熱がこもりにくくなり、パワー半導体素子近傍の空気温度の上昇が抑制されるので、パワー半導体素子の温度が低下でき、パワー半導体素子から制御基板への入熱量がさらに減少し、制御基板の温度を低下させることができ、パワーモジュールの信頼性を向上することができる。 According to the power module of the present invention, since the plurality of control boards are arranged substantially perpendicular to the mounting surface of the base plate, the area of the control board facing the power semiconductor element can be reduced, and the heat from the power semiconductor element can be reduced. Heat transfer due to conduction and radiation can be reduced. Further, according to the power module of the present invention, since the space above the power semiconductor element can be widened, it is difficult for heat to be trapped, and an increase in the air temperature in the vicinity of the power semiconductor element is suppressed. The amount of heat input from the power semiconductor element to the control board can be further reduced, the temperature of the control board can be lowered, and the reliability of the power module can be improved.

本発明の実施の形態１によるパワーモジュールの断面図である。It is sectional drawing of the power module by Embodiment 1 of this invention. 本発明の制御基板の角度と輻射量の関係図である。It is a relationship diagram of the angle of the control board and the radiation amount of the present invention. 本発明の実施の形態１による制御基板の支持方法を示す図である。It is a figure which shows the support method of the control board by Embodiment 1 of this invention. 本発明の実施の形態１によるコネクタを示す図である。It is a figure which shows the connector by Embodiment 1 of this invention. 本発明の実施の形態１による他のコネクタを示す図である。It is a figure which shows the other connector by Embodiment 1 of this invention. 本発明の実施の形態２によるパワーモジュールの断面図である。It is sectional drawing of the power module by Embodiment 2 of this invention. 本発明の実施の形態２による制御基板の支持方法を示す図である。It is a figure which shows the support method of the control board by Embodiment 2 of this invention. 本発明の実施の形態２による他のパワーモジュールの断面図である。It is sectional drawing of the other power module by Embodiment 2 of this invention. 図８のパワーモジュールの平面図である。It is a top view of the power module of FIG. 本発明の実施の形態２による制御基板の支持方法を示す図である。It is a figure which shows the support method of the control board by Embodiment 2 of this invention. 本発明の実施の形態３によるパワーモジュールの断面図である。It is sectional drawing of the power module by Embodiment 3 of this invention. 本発明の実施の形態３による他のパワーモジュールの断面図である。It is sectional drawing of the other power module by Embodiment 3 of this invention. 本発明の実施の形態４によるパワーモジュールの断面図である。It is sectional drawing of the power module by Embodiment 4 of this invention. 本発明の実施の形態５によるパワーモジュールの断面図である。It is sectional drawing of the power module by Embodiment 5 of this invention. 本発明の実施の形態６によるパワーモジュールの断面図である。It is sectional drawing of the power module by Embodiment 6 of this invention. 本発明の実施の形態７によるパワーモジュールの断面図である。It is sectional drawing of the power module by Embodiment 7 of this invention.

実施の形態１．
図１は、本発明の実施の形態１によるパワーモジュールの断面図である。パワーモジュール２０は、シリコン（Ｓｉ）やシリコンカーバイト（ＳｉＣ）等のワイドバンドギャップ半導体材料を基材としたパワー半導体素子１が、ベース板２の上に配置されたセラミックなどからなる絶縁基板（図示せず）の上に、半田により実装されている。パワーモジュール２０は、パワー半導体素子１と、ベース板２と、主端子３と、ケース４と、制御ＩＣ９が実装された制御基板６と、パワー半導体素子１を封止する封止材５を備える。図１では、パワー半導体素子１が３つあり、主端子３が２つあり、制御ＩＣ９が３つある例を示した。パワー半導体素子の符号は、総括的に１を用い、区別して説明する場合に１ａ、１ｂ、１ｃを用いる。主端子の符号は、総括的に３を用い、区別して説明する場合に３ａ、３ｂを用いる。制御ＩＣの符号は、総括的に９を用い、区別して説明する場合に９ａ、９ｂ、９ｃを用いる。Embodiment 1 FIG.
FIG. 1 is a cross-sectional view of a power module according to Embodiment 1 of the present invention. The power module 20 includes an insulating substrate (such as a ceramic in which a power semiconductor element 1 based on a wide band gap semiconductor material such as silicon (Si) or silicon carbide (SiC) is disposed on a base plate 2. (Not shown) is mounted by solder. The power module 20 includes a power semiconductor element 1, a base plate 2, a main terminal 3, a case 4, a control board 6 on which a control IC 9 is mounted, and a sealing material 5 that seals the power semiconductor element 1. . FIG. 1 shows an example in which there are three power semiconductor elements 1, two main terminals 3, and three control ICs 9. The reference numerals of the power semiconductor elements are 1 as a whole, and 1a, 1b, and 1c are used when they are distinguished from each other. The reference numerals of the main terminals are generally 3 and 3a and 3b are used in the case of distinguishing and explaining. The reference numeral of the control IC is 9 as a whole, and 9a, 9b, and 9c are used in the case of distinction.

ベース板２は、通常銅板等の熱伝導率の高い金属により作成されるが、絶縁基板とパワー半導体素子１との接合部である半田部がヒートサイクルにより破壊されることを抑制するため、熱膨張率が銅板に比べ小さい、アルミニウム・シリコンカーバイト（ＡｌＳｉＣ）や銅モリブデン（ＣｕＭｏ）などを用いることもできる。   The base plate 2 is usually made of a metal having a high thermal conductivity such as a copper plate. However, in order to suppress the solder portion, which is a joint portion between the insulating substrate and the power semiconductor element 1, from being destroyed by the heat cycle, Aluminum / silicon carbide (AlSiC), copper molybdenum (CuMo), or the like, which has a smaller expansion coefficient than the copper plate, can also be used.

パワー半導体素子１は、ゲル状の封止材５により封止されており、パワー半導体素子１の上方には、パワー半導体素子１を制御するための制御ＩＣ９が実装された制御基板６が配置されている。パワー半導体素子１と制御基板６は、ケース４により一つのパッケージとして収納されている。ケース４は、例えば、枠体３１とフタ３２から構成されている。ケース４は、ポリフェニレンサルファイド（ＰＰＳ）等の絶縁と耐熱性を有した樹脂で構成されることが多い。   The power semiconductor element 1 is sealed with a gel-like sealing material 5, and a control substrate 6 on which a control IC 9 for controlling the power semiconductor element 1 is mounted is disposed above the power semiconductor element 1. ing. The power semiconductor element 1 and the control board 6 are accommodated in a single package by the case 4. The case 4 includes, for example, a frame body 31 and a lid 32. The case 4 is often made of a resin having insulation and heat resistance, such as polyphenylene sulfide (PPS).

ケース４に固定された主端子３ａ、３ｂは、アルミ製のボンディングワイヤ１０と中継端子（図示せず）を介してパワー半導体素子１ａ、１ｂ、１ｃと電気的に接続されており、大電流が流れる。アルミ製のボンディングワイヤ１０の代わりに、銅やアルミなど導電性の高い金属からなるリードフレームを用いてもよい。パワー半導体素子１ｂは、パワー半導体素子１ａ、１ｃとアルミ製のボンディングワイヤ１０を介して電気的に接続されている。また、パワー半導体素子１は、主端子３とボンディングワイヤ１０と中継端子を介して制御基板６に電気的に接続されており、制御基板６上にある制御ＩＣ９ａ、９ｂ、９ｃによりそれぞれパワー半導体素子１ａ、１ｂ、１ｃのスイッチング動作を制御している。   The main terminals 3a and 3b fixed to the case 4 are electrically connected to the power semiconductor elements 1a, 1b and 1c via an aluminum bonding wire 10 and a relay terminal (not shown). Flowing. Instead of the aluminum bonding wire 10, a lead frame made of a highly conductive metal such as copper or aluminum may be used. The power semiconductor element 1b is electrically connected to the power semiconductor elements 1a and 1c via the aluminum bonding wires 10. The power semiconductor element 1 is electrically connected to the control board 6 via the main terminal 3, the bonding wire 10, and the relay terminal, and the power semiconductor elements are respectively controlled by the control ICs 9a, 9b, and 9c on the control board 6. The switching operation of 1a, 1b, 1c is controlled.

図１では、パワー半導体素子１の上方に搭載された一枚の制御基板６が、ベース板２の表面、すなわちベース板２におけるパワー半導体素子１が実装された実装面と略垂直に配置されている。このような構成とすれば、複雑な構成の熱遮断部材を用いることなく、パワー半導体素子１から制御基板６への入熱面積を大幅に減少させることが可能となる。したがって、パワー半導体素子１から制御基板６への入熱を極力減少させるとともに、制御基板６の広い面はパワー半導体素子１と対向しないことにより制御基板６の両面から放熱が促されるので、制御基板６の放熱性が悪化するということがなくなる。制御基板６をベース板２の実装面に対して略垂直になるように配置することにより、制御基板６の温度上昇を大幅に低減させることが可能となる。   In FIG. 1, a single control board 6 mounted above the power semiconductor element 1 is disposed substantially perpendicular to the surface of the base plate 2, that is, the mounting surface of the base plate 2 on which the power semiconductor element 1 is mounted. Yes. With such a configuration, it is possible to significantly reduce the heat input area from the power semiconductor element 1 to the control board 6 without using a heat blocking member having a complicated configuration. Therefore, the heat input from the power semiconductor element 1 to the control board 6 is reduced as much as possible, and since the wide surface of the control board 6 is not opposed to the power semiconductor element 1, heat radiation is promoted from both sides of the control board 6. The heat dissipation of 6 is not deteriorated. By disposing the control board 6 so as to be substantially perpendicular to the mounting surface of the base plate 2, the temperature rise of the control board 6 can be significantly reduced.

実施の形態１のパワーモジュール２０は、制御基板６をベース板２の実装面に対し略垂直に取付けたことにより、パワー半導体素子１による熱が制御基板６に伝わりにくくなることと、制御基板６の両面からの放熱が可能となり、放熱面積の増加により放熱性を向上させることで、制御基板６の温度上昇を大幅に低減できる。   In the power module 20 according to the first embodiment, the control board 6 is attached substantially perpendicular to the mounting surface of the base plate 2, so that heat from the power semiconductor element 1 is not easily transmitted to the control board 6, and the control board 6 It is possible to dissipate heat from both sides and to improve heat dissipation by increasing the heat dissipating area, the temperature rise of the control board 6 can be greatly reduced.

パワー半導体素子１は、シリコンウエハを基材とした一般的な素子でもよいが、本発明においてはシリコンカーバイト（ＳｉＣ）や窒化ガリウム（ＧａＮ）系材料、またはダイヤモンドといったシリコンと較べてバンドギャップが広い、いわゆるワイドバンドギャップ半導体材料を適用できる。デバイス種類としては、特に限定する必要はないが、ＩＧＢＴ（Insulated Gate Bipolar Transistor）やＭＯＳＦＥＴ（Metal Oxide Semiconductor Field-Effect-Transistor）のようなスイッチング素子、やダイオードのような整流素子を搭載することができる。例えば、スイッチング素子や整流素子として機能するパワー半導体素子１に、シリコンカーバイト（ＳｉＣ）や窒化ガリウム（ＧａＮ）系材料又はダイヤモンドを用いた場合、従来から用いられてきたシリコン（Ｓｉ）で形成された素子よりも電力損失が低いため、パワーモジュール２０の高効率化が可能となる。また、耐電圧性が高く、許容電流密度も高いため、パワーモジュール２０の小型化が可能となる。さらにワイドバンドギャップ半導体素子は、耐熱性が高いので、高温動作が可能であり、放熱フィンの小型化や、水冷部の空冷化も可能となるので、放熱フィンを備えたパワーモジュール２０の一層の小型化が可能になる。   The power semiconductor element 1 may be a general element based on a silicon wafer. In the present invention, the power semiconductor element 1 has a band gap as compared with silicon such as silicon carbide (SiC), gallium nitride (GaN) -based material, or diamond. A wide so-called wide band gap semiconductor material can be applied. The device type is not particularly limited, but a switching element such as an IGBT (Insulated Gate Bipolar Transistor) or MOSFET (Metal Oxide Semiconductor Field-Effect-Transistor) or a rectifying element such as a diode may be mounted. it can. For example, when silicon carbide (SiC), gallium nitride (GaN) -based material, or diamond is used for the power semiconductor element 1 functioning as a switching element or a rectifying element, it is formed of silicon (Si) that has been used conventionally. Since the power loss is lower than that of the element, the efficiency of the power module 20 can be increased. In addition, since the withstand voltage is high and the allowable current density is high, the power module 20 can be downsized. Furthermore, since the wide band gap semiconductor element has high heat resistance, it can operate at a high temperature, and the heat dissipating fins can be downsized and the water cooling part can be air-cooled. Miniaturization is possible.

図２は、本発明の制御基板の角度と輻射量の関係図である。制御基板６は、パワー半導体素子１が搭載されるベース板２の表面に対して垂直とすることが好ましいが、輻射の影響について考慮すると、ベース板２の表面に垂直な垂直面に対して±３０°（図２において６０°〜１２０°）以内の角度に傾けることで、輻射の熱の移動量が半分以下にできる。このように、パワー半導体素子１が搭載されるベース板２の実装面に対して略垂直とすれば、ベース板２の実装面に対して平行に制御基板を配置する場合（図２において０°又は１８０°）に比べて、制御基板の温度上昇を低減させる効果を得ることができる。また、制御基板６がパワー半導体素子１に垂直な面に対して、±３０°以上の場合においても、平行にならないように、傾斜を持たせることで、制御基板６におけるパワー半導体素子１に対面する面積が減少し、制御基板６の温度上昇の低減に効果がある。なお、ベース板２と制御基板との配置角度は、他の実施の形態においても同様である。   FIG. 2 is a relationship diagram between the angle of the control board and the radiation amount of the present invention. The control board 6 is preferably perpendicular to the surface of the base plate 2 on which the power semiconductor element 1 is mounted. However, considering the influence of radiation, the control board 6 is ± By tilting to an angle within 30 ° (60 ° to 120 ° in FIG. 2), the amount of movement of radiation heat can be reduced to half or less. As described above, when the control board is arranged in parallel to the mounting surface of the base plate 2 if it is substantially perpendicular to the mounting surface of the base plate 2 on which the power semiconductor element 1 is mounted (0 ° in FIG. 2). Or 180 °), the effect of reducing the temperature rise of the control board can be obtained. Further, the control substrate 6 faces the power semiconductor element 1 on the control substrate 6 by providing an inclination so that the control substrate 6 does not become parallel to the plane perpendicular to the power semiconductor element 1 even when it is ± 30 ° or more. This is effective in reducing the temperature rise of the control board 6. In addition, the arrangement | positioning angle of the base board 2 and a control board is the same also in other embodiment.

図３は、本発明の実施の形態１による制御基板の支持方法の一例を示す図である。実施の形態１のパワーモジュール２０は、ケース４の枠体３１に制御基板６を支持するための溝１９を設けており、制御基板６を溝１９に挿入することで制御基板６を支持している。   FIG. 3 is a diagram showing an example of a control board support method according to the first embodiment of the present invention. The power module 20 of the first embodiment is provided with a groove 19 for supporting the control board 6 in the frame 31 of the case 4, and the control board 6 is supported by inserting the control board 6 into the groove 19. Yes.

制御基板６とパワー半導体素子１とを電気的に接続する方法を説明する。図４は、本発明の実施の形態１によるコネクタを示す図である。図４では、ケース４の枠体３１に設けられた溝１９と接する部分の制御基板端部にコネクタ１４を設け、同様にケース４の側にもコネクタ１５を設けることで、制御基板６と外部機器との導通をとる。制御基板６のコネクタ１４は、制御ＩＣ９とボンディングワイヤ１０で接続されている。ケース４の側のコネクタ１５は、パワー部（パワー半導体素子１）と導通するように、アルミボンディング（ボンディングワイヤ１０）もしくは、フレームなどで、パワー部（パワー半導体素子１）と接続する。また、端子等をケース４の中もしくは、ケース４の外部に取り付け、パワー半導体素子１からケース４の溝１９まで電気的に接続しても良い。それにより、制御基板６とパワー半導体素子１とを電気的に接続することが可能となる。   A method for electrically connecting the control substrate 6 and the power semiconductor element 1 will be described. FIG. 4 is a diagram showing a connector according to Embodiment 1 of the present invention. In FIG. 4, the connector 14 is provided at the end of the control board that is in contact with the groove 19 provided in the frame 31 of the case 4, and similarly, the connector 15 is provided on the side of the case 4. Conduct continuity with equipment. The connector 14 of the control board 6 is connected to the control IC 9 by a bonding wire 10. The connector 15 on the case 4 side is connected to the power part (power semiconductor element 1) by aluminum bonding (bonding wire 10) or a frame so as to be electrically connected to the power part (power semiconductor element 1). Further, a terminal or the like may be attached inside the case 4 or outside the case 4 and electrically connected from the power semiconductor element 1 to the groove 19 of the case 4. Thereby, the control board 6 and the power semiconductor element 1 can be electrically connected.

制御基板６とパワー半導体素子１とを電気的に接続する方法は、他の方法も考えられる。図５は、本発明の実施の形態１による他のコネクタを示す図である。図５は、制御基板６に対して略垂直となる向きにコネクタ１６を設け、パワー半導体素子１と電気的に接続している中継端子１７にコネクタ１６を電気的に接続する例である。制御基板６のコネクタ１６は、制御ＩＣ９とボンディングワイヤ１０で接続されている。制御基板６と電気的に接続されているコネクタ１６と、パワー半導体素子１と電気的に接続している中継端子１７を電気的に接続することで、制御基板６とパワー半導体素子１を電気的に接続させることが可能となる。   Other methods are conceivable for electrically connecting the control substrate 6 and the power semiconductor element 1. FIG. 5 is a diagram showing another connector according to the first embodiment of the present invention. FIG. 5 shows an example in which the connector 16 is provided in a direction substantially perpendicular to the control board 6 and the connector 16 is electrically connected to the relay terminal 17 that is electrically connected to the power semiconductor element 1. The connector 16 of the control board 6 is connected to the control IC 9 by a bonding wire 10. The control board 6 and the power semiconductor element 1 are electrically connected by electrically connecting the connector 16 electrically connected to the control board 6 and the relay terminal 17 electrically connected to the power semiconductor element 1. Can be connected.

なお、図４、図５では、制御ＩＣ９とコネクタ１４、１６との接続をボンディングワイヤ１０で行った例を示したが、制御基板６に形成されたパターンによる接続などでも良い。また、制御基板６とパワー半導体素子１との接続方法は、上記の方法以外にも、制御基板６とパワー半導体素子１とを、ボンディングワイヤ、導電性のよいフレーム、中継端子などによる接続でも良い。パワー半導体素子１と制御基板６との接続方法は、他の実施の形態においても同様であり、適宜、組み合わせて用いて良い。   4 and 5 show an example in which the control IC 9 and the connectors 14 and 16 are connected by the bonding wire 10, but connection by a pattern formed on the control board 6 may be used. In addition to the above method, the control board 6 and the power semiconductor element 1 may be connected by a bonding wire, a frame having good conductivity, a relay terminal, or the like, in addition to the above method. . The connection method between the power semiconductor element 1 and the control board 6 is the same in the other embodiments, and may be used in combination as appropriate.

以上のように実施の形態１のパワーモジュール２０によれば、ベース板２に実装されたパワー半導体素子１とパワー半導体素子１を制御する一つもしくは複数の制御基板６とがケース４内に配置され、少なくとも一つの制御基板６は、ベース板２におけるパワー半導体素子１が実装された実装面に対して略垂直に配置されたことを特徴とするので、放熱性が向上し、制御基板の温度を低下させることができ、パワーモジュール２０の信頼性を向上することができる。   As described above, according to the power module 20 of the first embodiment, the power semiconductor element 1 mounted on the base plate 2 and one or more control boards 6 for controlling the power semiconductor element 1 are arranged in the case 4. The at least one control board 6 is disposed substantially perpendicular to the mounting surface of the base plate 2 on which the power semiconductor element 1 is mounted, so that heat dissipation is improved and the temperature of the control board is increased. The reliability of the power module 20 can be improved.

実施の形態２．
図６は、本発明の実施の形態２によるパワーモジュールの断面図である。実施の形態２のパワーモジュール２０は、複数の制御基板６、７を搭載する点で、実施の形態１と異なる。図６では、制御基板６に制御ＩＣ９ａが搭載され、制御基板７に制御ＩＣ９ｂが搭載された例を示した。Embodiment 2. FIG.
FIG. 6 is a cross-sectional view of a power module according to Embodiment 2 of the present invention. The power module 20 of the second embodiment is different from that of the first embodiment in that a plurality of control boards 6 and 7 are mounted. FIG. 6 shows an example in which the control IC 9 a is mounted on the control board 6 and the control IC 9 b is mounted on the control board 7.

実施の形態２では、複数ある制御基板６、７を全てベース板２の実装面に対して略垂直に配置しており、さらに制御基板６と、制御基板７とを平行に配置している。このような構成とすれば、実施の形態１で説明したように、パワー半導体素子１から制御基板６への入熱面積を大幅に減少させることが可能となるので、制御基板６、７に対して、パワー半導体素子１からの入熱を極力減少させることができる。また、制御基板６は、パワー半導体素子１や他の制御基板７に隣接した状態で挟まれることがなく、両面放熱が可能となるため、放熱性が悪化するということがなくなる。複数の制御基板６、７を全てベース板２の実装面に対して略垂直に配置することにより、複数の制御基板６、７をパワーモジュール２０に搭載した場合に、制御基板６、７の温度上昇を大幅に低減させることが可能となる。   In the second embodiment, the plurality of control boards 6 and 7 are all arranged substantially perpendicular to the mounting surface of the base plate 2, and the control board 6 and the control board 7 are arranged in parallel. With this configuration, as described in the first embodiment, the heat input area from the power semiconductor element 1 to the control board 6 can be greatly reduced. Thus, heat input from the power semiconductor element 1 can be reduced as much as possible. Further, since the control board 6 is not sandwiched between the power semiconductor element 1 and the other control board 7 and both sides can dissipate heat, the heat radiation performance is not deteriorated. When the plurality of control boards 6 and 7 are mounted on the power module 20 by arranging the plurality of control boards 6 and 7 substantially perpendicular to the mounting surface of the base plate 2, the temperature of the control boards 6 and 7 is increased. It is possible to greatly reduce the rise.

図７は、本発明の実施の形態２による制御基板の支持方法の一例を示す図である。実施の形態２のパワーモジュール２０は、複数の制御基板を搭載しており、搭載する基板枚数分だけ、ケース４に制御基板を支持するための溝１９を設けて、制御基板を溝１９に挿入することで制御基板を支持している。図６では２枚の制御基板６、７を平行に配置する例を示したが、図７では３枚の制御基板６、７、８を平行に配置する例を示している。   FIG. 7 is a diagram illustrating an example of a control board support method according to the second embodiment of the present invention. The power module 20 according to the second embodiment has a plurality of control boards mounted thereon, and grooves 19 for supporting the control boards are provided in the case 4 by the number of boards to be mounted, and the control boards are inserted into the grooves 19. By doing so, the control board is supported. Although FIG. 6 shows an example in which two control boards 6 and 7 are arranged in parallel, FIG. 7 shows an example in which three control boards 6, 7, and 8 are arranged in parallel.

図８は、本発明の実施の形態２による他のパワーモジュールの断面図である。図９は、図８のパワーモジュールの平面図であり、ケース４のフタ３２を外した平面図である。図８、図９では、複数の制御基板６、７を全てベース板２の実装面に対して略垂直に配置した状態に加え、少なくとも一枚の制御基板６を他の制御基板７に対して略垂直に配置している。図８、図９では、制御基板６に制御ＩＣ９ａ、９ｂが搭載され、制御基板７に制御ＩＣ９ｃが搭載された例を示した。図９には、３つの主端子３ａ、３ｂ、３ｃがある例を示した。図８では、主端子３ｃが主端子３ａの背後（図８において紙面の奥側）に重なっている例を示した。   FIG. 8 is a cross-sectional view of another power module according to Embodiment 2 of the present invention. FIG. 9 is a plan view of the power module of FIG. 8 and is a plan view of the case 4 with the lid 32 removed. In FIG. 8 and FIG. 9, in addition to the state in which the plurality of control boards 6 and 7 are all arranged substantially perpendicular to the mounting surface of the base plate 2, at least one control board 6 is in relation to the other control boards 7. They are arranged almost vertically. 8 and 9, the control ICs 9 a and 9 b are mounted on the control board 6, and the control IC 9 c is mounted on the control board 7. FIG. 9 shows an example in which there are three main terminals 3a, 3b, and 3c. FIG. 8 shows an example in which the main terminal 3c overlaps behind the main terminal 3a (the back side of the paper surface in FIG. 8).

図１０は、本発明の実施の形態２による制御基板の支持方法の一例を示す図であり、図８、図９に示したパワーモジュール２０における制御基板６、７の支持方法を示したものである。制御基板６の下部に、溝３３を設けた支持部材１８をベース板２もしくはケース４の枠体３１などに固定し、溝３３に制御基板６を挟むことで、制御基板６を支持する。図８、図９では、支持部材１８をケース４の枠体３１に固定した例を示した。制御基板６の支持方法として、支持部材１８の一点のみだけでなく、上部のケース４のフタ３２に制御基板６が入る溝３４を設けて、制御基板６を複数個箇所で支持する例を示した。なお、制御基板６の支持方法として、支持部材１８の一点のみだけで支持してもよいし、支持部材１８を複数設けることで、制御基板６を複数個箇所で支持してもよい。なお、制御基板７の支持方法は、図７に示した方法を適用した。図７で示した制御基板６、７、８の支持方法や、図１０で示した制御基板６、７の支持方法は他の実施の形態においても同様であり、適宜、組み合わせて用いて良い。   FIG. 10 is a diagram showing an example of a method of supporting the control board according to the second embodiment of the present invention, and shows a method of supporting the control boards 6 and 7 in the power module 20 shown in FIGS. is there. A support member 18 provided with a groove 33 is fixed to the base plate 2 or the frame 31 of the case 4 below the control board 6, and the control board 6 is sandwiched between the grooves 33 to support the control board 6. 8 and 9, an example in which the support member 18 is fixed to the frame body 31 of the case 4 is shown. As an example of a method for supporting the control board 6, not only one point of the support member 18 but also a groove 34 for receiving the control board 6 is provided in the lid 32 of the upper case 4 to support the control board 6 at a plurality of locations. It was. In addition, as a support method of the control board 6, you may support by only one point of the support member 18, and you may support the control board 6 in multiple places by providing the support member 18 with two or more. Note that the method shown in FIG. 7 was applied as a method of supporting the control board 7. The method for supporting the control boards 6, 7, and 8 shown in FIG. 7 and the method for supporting the control boards 6, 7 shown in FIG. 10 are the same in the other embodiments, and may be used in appropriate combinations.

図８、図９のような構成とすれば、パワー半導体素子１から制御基板６への入熱面積を大幅に減少させることが可能となり、また、他の制御基板７からの入熱面積も大幅に減少させることが可能となるので、一方の制御基板６に対して、パワー半導体素子１や他方の制御基板７からの入熱を極力減少させることができる。また、制御基板６は、パワー半導体素子１や他の制御基板７に隣接した状態で挟まれることがなく、両面放熱が可能となるため、放熱性が悪化するということがなくなる。複数の制御基板６、７を全てベース板２の実装面に対して略垂直に配置することにより、複数の制御基板６、７を搭載した場合に、制御基板６、７の温度上昇を大幅に低減させることが可能となる。   8 and 9, the heat input area from the power semiconductor element 1 to the control board 6 can be greatly reduced, and the heat input area from other control boards 7 is also greatly increased. Therefore, heat input from the power semiconductor element 1 and the other control board 7 can be reduced as much as possible with respect to one control board 6. Further, since the control board 6 is not sandwiched between the power semiconductor element 1 and the other control board 7 and both sides can dissipate heat, the heat radiation performance is not deteriorated. By arranging the plurality of control boards 6 and 7 substantially perpendicular to the mounting surface of the base plate 2, when the plurality of control boards 6 and 7 are mounted, the temperature rise of the control boards 6 and 7 is greatly increased. It can be reduced.

なお、図６〜図１０では、制御基板を複数搭載する場合に、制御基板６、７又は制御基板６、７、８の全てがベース板２の実装面に対して略垂直に配置した例を示したが、少なくとも一枚の制御基板６をベース板２の実装面に対して略垂直に配置することでもよい。例えば、複数の制御基板のうち、最も消費電力の大きい制御基板６をベース板２の実装面に対して略垂直に配置することで、制御基板６の温度上昇を大幅に低減させることが可能となる。また、制御基板６よりも消費電力の小さい制御基板７は、パワー半導体素子１からの入熱の少ない位置や、制御基板６からの入熱の少ない位置に配置すればよい。   6 to 10, when a plurality of control boards are mounted, an example in which all of the control boards 6 and 7 or the control boards 6, 7, and 8 are arranged substantially perpendicular to the mounting surface of the base plate 2. Although shown, at least one control board 6 may be arranged substantially perpendicular to the mounting surface of the base plate 2. For example, by arranging the control board 6 having the largest power consumption among the plurality of control boards substantially perpendicular to the mounting surface of the base plate 2, it is possible to significantly reduce the temperature rise of the control board 6. Become. Further, the control board 7, which consumes less power than the control board 6, may be disposed at a position where the heat input from the power semiconductor element 1 is low or a position where the heat input from the control board 6 is low.

実施の形態３．
図１１は、本発明の実施の形態３によるパワーモジュールの断面図である。実施の形態３のパワーモジュール２０は、制御基板のうち少なくとも一枚と略平行に位置するケース４の側面にヒートシンクなどの放熱器１１を取付けたものである。放熱器１１は、制御基板７における厚さ方向の面が対向するケース４の外周面であって、制御基板７に近い側の外周面に取付けられている。図１１では、複数の制御基板６、７を搭載し、制御基板６に実装された制御ＩＣ９ａと制御基板７に実装された制御ＩＣ９ｂが対向するように配置された例である。なお、放熱器１１はケース４の側面に複数配置していても良い。Embodiment 3 FIG.
FIG. 11 is a cross-sectional view of a power module according to Embodiment 3 of the present invention. The power module 20 according to the third embodiment has a radiator 11 such as a heat sink attached to the side surface of the case 4 that is positioned substantially parallel to at least one of the control boards. The radiator 11 is attached to the outer peripheral surface of the case 4, which faces the thickness direction of the control board 7, and is close to the control board 7. FIG. 11 shows an example in which a plurality of control boards 6 and 7 are mounted, and the control IC 9a mounted on the control board 6 and the control IC 9b mounted on the control board 7 are arranged to face each other. A plurality of radiators 11 may be disposed on the side surface of the case 4.

このような構成とすれば、制御基板７と略平行に位置するケース４の側面の温度を低下させることが可能となるので、制御基板７の熱を低温となっているケース４に放熱させることが可能となり、放熱性が向上する。このように制御基板７と略平行に位置するケース４に放熱器１１を搭載することで、制御基板７上の制御ＩＣ９ｂ等の素子の発熱による基板温度上昇を、放熱性の向上により、極力減少させることが可能となる。制御基板７とケース４の側面とが略平行となる角度は、例えば３０°以内の角度である。   With such a configuration, the temperature of the side surface of the case 4 located substantially parallel to the control board 7 can be lowered, and therefore, the heat of the control board 7 can be radiated to the case 4 having a low temperature. And the heat dissipation is improved. By mounting the radiator 11 on the case 4 positioned substantially parallel to the control board 7 in this way, the substrate temperature rise due to heat generation of elements such as the control IC 9b on the control board 7 is reduced as much as possible by improving the heat dissipation. It becomes possible to make it. The angle at which the control board 7 and the side surface of the case 4 are substantially parallel is, for example, an angle within 30 °.

図１２は、本発明の実施の形態３による他のパワーモジュールの断面図である。図１２は、ベース板２の実装面に対して略垂直に配置した制御基板６、７の内少なくとも一枚、例えば制御基板７を、基板上で制御ＩＣ９ｂ等が搭載されている高温側の面を他の制御基板６のある側と反対方向であるケース４の側に向けたものである。図１２では、制御ＩＣ９ｂ等が搭載されている高温側の面と対向するケース４の側面に放熱器１１を取付けた例を示した。   FIG. 12 is a cross-sectional view of another power module according to Embodiment 3 of the present invention. 12 shows at least one of the control boards 6 and 7 arranged substantially perpendicular to the mounting surface of the base plate 2, for example, the control board 7 on the high temperature side surface on which the control IC 9b is mounted. Is directed to the side of the case 4 opposite to the side on which the other control board 6 is located. In FIG. 12, the example which attached the heat radiator 11 to the side surface of case 4 facing the surface of the high temperature side in which control IC9b etc. are mounted was shown.

このような構成とすれば、制御基板７の低温側の面（制御ＩＣ９等が搭載されていない面）が他の制御基板６のある側に向いているため、他の制御基板６へ熱が移動することを抑えることが可能となる。さらに、全ての制御基板６、７の低温側を内側に向けることで、効果をより高めることが可能となる。ケース４に放熱器１１が取付けてあれば、ケース４からの放熱性もさらに向上するため、尚良い。   With such a configuration, the low-temperature side surface (the surface on which the control IC 9 or the like is not mounted) of the control board 7 faces the other control board 6 side. It becomes possible to suppress movement. Furthermore, the effect can be further enhanced by directing the low temperature side of all the control boards 6 and 7 inward. If the radiator 11 is attached to the case 4, the heat dissipation from the case 4 is further improved.

実施の形態４．
図１３は、実施の形態４によるパワーモジュールを示す断面図である。本実施の形態では、複数の制御基板６、７の間に熱遮断部材１２を設けたパワーモジュール２０を示す。図１３の例は、熱遮断部材１２をケース４の上部に対して略垂直に取付けたものであり、熱遮断部材１２が複数の制御基板６、７の間に延伸して配置されている。熱遮断部材１２は、ケース４と一体成型してもよい。熱遮断部材１２は、パワーモジュール２０に搭載される制御基板の数や配置により、一枚もしくは複数とする。図１３では、２枚の制御基板６、７を平行に配置し、制御基板６、７の間に制御基板と略平行となるように熱遮断部材１２を入れた例を示した。制御基板６と制御基板７とが略平行となる角度は、例えば３０°以内の角度である。Embodiment 4 FIG.
FIG. 13 is a cross-sectional view showing a power module according to the fourth embodiment. In the present embodiment, a power module 20 in which a heat blocking member 12 is provided between a plurality of control boards 6 and 7 is shown. In the example of FIG. 13, the heat blocking member 12 is attached substantially perpendicularly to the upper portion of the case 4, and the heat blocking member 12 is disposed extending between the plurality of control boards 6 and 7. The heat shield member 12 may be integrally formed with the case 4. Depending on the number and arrangement of control boards mounted on the power module 20, one or more heat blocking members 12 are provided. FIG. 13 shows an example in which two control boards 6 and 7 are arranged in parallel, and the heat blocking member 12 is inserted between the control boards 6 and 7 so as to be substantially parallel to the control board. The angle at which the control board 6 and the control board 7 are substantially parallel is, for example, an angle within 30 °.

図１３に示したように、複数の制御基板６、７を平行に配置した場合、制御基板が３枚以上であれば、制御基板間全てに制御基板と略平行となるように熱遮断部材１２を入れるのが望ましい。なお、複数の制御基板６、７は完全な平行で配置した場合に限らず、略平行であってもよく、熱遮断部材１２も複数の制御基板６、７の間にあればよい。また、熱遮断部材１２は、制御基板間の熱遮断を目的とするため、制御基板６、７とほぼ同じかそれ以上の大きさを有していることが望ましい。   As shown in FIG. 13, when a plurality of control boards 6 and 7 are arranged in parallel, if there are three or more control boards, the heat blocking member 12 is arranged so that all the control boards are substantially parallel to the control boards. It is desirable to add. The plurality of control boards 6 and 7 are not limited to being arranged in parallel, but may be substantially parallel, and the heat blocking member 12 may be between the plurality of control boards 6 and 7. Further, since the heat blocking member 12 is intended to block heat between the control boards, it is desirable that the heat blocking member 12 has a size substantially equal to or larger than that of the control boards 6 and 7.

図１３では、制御基板６における制御ＩＣ９ａ等が搭載されている高温側の面と、制御基板７における制御ＩＣ９ｂ等が搭載されている高温側の面とを、熱遮断部材１２を介して対向させた例を示した。この場合は、熱遮断部材１２により、一方の制御基板から他方の制御基板への熱、例えば制御基板６から制御基板７への熱を遮断できるので、制御基板６、７の放熱性が向上し、制御基板６、７の温度を低下させることができ、パワーモジュール２０の信頼性を向上することができる。なお、制御基板６における制御ＩＣ９ａ等が搭載されている高温側の面と、制御基板７における制御ＩＣ９ｂ等が搭載されている高温側の面との配置は、図１３の例に限らず、図６の配置例や図１２の配置例でも構わない。   In FIG. 13, the high-temperature side surface on which the control IC 9 a or the like on the control board 6 is mounted and the high-temperature side surface on the control board 7 on which the control IC 9 b or the like is mounted are opposed to each other via the heat blocking member 12. An example was given. In this case, the heat blocking member 12 can block heat from one control board to the other control board, for example, heat from the control board 6 to the control board 7, so that heat dissipation of the control boards 6 and 7 is improved. The temperature of the control boards 6 and 7 can be lowered, and the reliability of the power module 20 can be improved. The arrangement of the high-temperature side surface on which the control IC 9a and the like are mounted on the control board 6 and the high-temperature side surface on which the control IC 9b and the like are mounted on the control board 7 are not limited to the example of FIG. The arrangement example shown in FIG. 6 or the arrangement example shown in FIG.

以上のように、実施の形態４のパワーモジュール２０は、複数の制御基板６、７をベース板２の実装面と略垂直になるように配置することにより、パワー半導体素子１からの入熱を極力減少させるとともに、制御基板６、７の広い面はパワー半導体素子１と対向しないことにより制御基板６、７の両面から放熱が促される。さらに、実施の形態４のパワーモジュール２０は、複数の制御基板６、７の間に熱遮断部材１２を設けたので、制御基板間の熱移動を遮断でき、熱遮断部材１２がない場合よりも制御基板６、７の放熱性が向上し、制御基板６、７の温度を低下させることができ、パワーモジュール２０の信頼性を向上させることができる。   As described above, the power module 20 according to the fourth embodiment arranges the plurality of control boards 6 and 7 so as to be substantially perpendicular to the mounting surface of the base plate 2, thereby receiving heat input from the power semiconductor element 1. As much as possible, the wide surfaces of the control boards 6 and 7 are not opposed to the power semiconductor element 1, so that heat is radiated from both sides of the control boards 6 and 7. Furthermore, the power module 20 according to the fourth embodiment includes the heat blocking member 12 between the plurality of control boards 6 and 7, so that the heat transfer between the control boards can be blocked, compared to the case where the heat blocking member 12 is not provided. The heat dissipation of the control boards 6 and 7 can be improved, the temperature of the control boards 6 and 7 can be lowered, and the reliability of the power module 20 can be improved.

実施の形態５．
図１４は、実施の形態５によるパワーモジュールを示す断面図である。本実施の形態は、実施の形態４のパワーモジュール２０において、熱遮断部材１２を、金属等の熱遮断部材１２よりも熱伝導率が高い熱遮断部材１３で挟んだ構造にしたものである。熱遮断部材１２が熱伝導率の低い樹脂などの場合には、金属等の熱伝導率が高い熱遮断部材１３で挟んだ構造であると良い。そのとき、熱伝導率の低い熱遮断部材１２はケース４と同じ材質でもよく、一体成型しても問題はないが、できるだけ熱伝導率が低いものが望ましい。Embodiment 5 FIG.
FIG. 14 is a cross-sectional view showing a power module according to the fifth embodiment. In the power module 20 according to the fourth embodiment, the present embodiment has a structure in which the heat blocking member 12 is sandwiched between heat blocking members 13 having higher heat conductivity than the heat blocking member 12 such as metal. When the heat blocking member 12 is a resin having a low thermal conductivity, the structure is preferably sandwiched between the heat blocking members 13 having a high thermal conductivity such as metal. At that time, the heat shielding member 12 having a low thermal conductivity may be made of the same material as that of the case 4, and there is no problem even if it is integrally molded, but it is desirable that the thermal conductivity be as low as possible.

実施の形態５のパワーモジュール２０は、熱伝導率が高い熱遮断部材１３でケース４とつながっているため、ケース４の上部には熱が伝わりやすくなるものの、制御基板間には熱伝導率が小さい熱遮断部材１２を挟んでいるため、熱の伝わりが抑制される。熱遮断部材１３により、大半の熱はケース４の上部に伝わっていくため、制御基板間の輻射等により、制御基板６、７の基板温度が上昇することはほとんどない。   Since the power module 20 of the fifth embodiment is connected to the case 4 by the heat blocking member 13 having a high thermal conductivity, heat is easily transmitted to the upper portion of the case 4, but the thermal conductivity is between the control boards. Since the small heat shielding member 12 is sandwiched, the transmission of heat is suppressed. Since most of the heat is transferred to the upper part of the case 4 by the heat blocking member 13, the substrate temperature of the control boards 6 and 7 hardly increases due to radiation between the control boards.

以上のように、実施の形態５のパワーモジュール２０は、複数の制御基板６、７の間に熱伝導率が高い熱遮断部材１３で挟んだ熱遮断部材１２を設けたので、制御基板間の熱移動を遮断でき、実施の形態４よりも制御基板６、７の放熱性が向上し、制御基板６、７の温度を低下させることができ、パワーモジュール２０の信頼性を向上させることができる。   As described above, the power module 20 according to the fifth embodiment includes the heat blocking member 12 sandwiched between the plurality of control boards 6 and 7 with the heat blocking member 13 having high thermal conductivity. The heat transfer can be cut off, the heat dissipation of the control boards 6 and 7 can be improved compared to the fourth embodiment, the temperature of the control boards 6 and 7 can be lowered, and the reliability of the power module 20 can be improved. .

実施の形態６．
図１５は、実施の形態６によるパワーモジュールを示す断面図である。本実施の形態は、複数の制御基板６、７、８の配置を考慮して、複数の熱遮断部材１２ａ、１２ｂを用いた例である。その際、複数の熱遮断部材１２ａ、１２ｂは、制御基板間の入熱を抑制するように配置することが望ましい。図１５では、３枚の制御基板６、７、８を平行に配置し、制御基板６、７、８の間に制御基板と略平行となるように熱遮断部材１２ａ、１２ｂを入れた例を示した。熱遮断部材の符号は、総括的に１２を用い、区別して説明する場合に１２ａ、１２ｂを用いる。Embodiment 6 FIG.
FIG. 15 is a sectional view showing a power module according to the sixth embodiment. The present embodiment is an example in which a plurality of heat blocking members 12a and 12b are used in consideration of the arrangement of the plurality of control boards 6, 7, and 8. At this time, it is desirable that the plurality of heat blocking members 12a and 12b be arranged so as to suppress heat input between the control boards. In FIG. 15, an example in which three control boards 6, 7, 8 are arranged in parallel, and heat blocking members 12 a, 12 b are inserted between the control boards 6, 7, 8 so as to be substantially parallel to the control board. Indicated. The code | symbol of a heat-insulation member uses 12 generally, and uses 12a and 12b when distinguishing and explaining.

この構成によれば、制御基板が３枚以上搭載された場合においても、制御基板間に熱遮断部材１２が配置されているので、熱遮断部材１２により、一方の制御基板は他方の制御基板と熱的に遮断されるため輻射により熱が伝わることがない。また、ケース４に配置された熱遮断部材１２ａ、１２ｂが低温となることで、熱遮断部材１２ａ、１２ｂに挟まれた制御基板７の両面から十分な放熱が可能となる。また、複数の制御基板６、７、８を平行に配置することで、パッケージ内のスペースを有効に活用することが可能となる。   According to this configuration, even when three or more control boards are mounted, the heat shielding member 12 is disposed between the control boards, so that one control board is connected to the other control board by the heat shielding member 12. Since it is thermally shut off, heat is not transmitted by radiation. In addition, since the heat shielding members 12a and 12b arranged in the case 4 have a low temperature, it is possible to sufficiently dissipate heat from both surfaces of the control board 7 sandwiched between the heat shielding members 12a and 12b. Further, by arranging the plurality of control boards 6, 7, and 8 in parallel, the space in the package can be used effectively.

実施の形態６のパワーモジュール２０は、制御基板が３枚以上搭載された場合においても、複数の制御基板６、７、８をベース板２の実装面と略垂直になるように配置することにより、パワー半導体素子１からの入熱を極力減少させるとともに、制御基板６、７、８の広い面はパワー半導体素子１と対向しないことにより制御基板６、７、８の両面から放熱が促される。さらに、実施の形態６のパワーモジュール２０は、複数の制御基板６、７、８の間に熱遮断部材１２を設けたので、制御基板間の熱移動を遮断でき、熱遮断部材１２がない場合よりも制御基板６、７、８の放熱性が向上し、制御基板６、７、８の温度を低下させることができ、パワーモジュール２０の信頼性を向上させることができる。   In the power module 20 of the sixth embodiment, even when three or more control boards are mounted, the plurality of control boards 6, 7, and 8 are arranged so as to be substantially perpendicular to the mounting surface of the base plate 2. The heat input from the power semiconductor element 1 is reduced as much as possible, and the wide surfaces of the control boards 6, 7, 8 are not opposed to the power semiconductor element 1, so that heat is radiated from both sides of the control boards 6, 7, 8. Further, since the power module 20 of the sixth embodiment is provided with the heat blocking member 12 between the plurality of control boards 6, 7, 8, the heat transfer between the control boards can be blocked and there is no heat blocking member 12. As a result, the heat dissipation of the control boards 6, 7, and 8 can be improved, the temperature of the control boards 6, 7, and 8 can be lowered, and the reliability of the power module 20 can be improved.

実施の形態７．
図１６は、実施の形態７によるパワーモジュールを示す断面図である。本実施の形態は、熱遮断部材１２が配置されたケース４の上部の外側に放熱器１１を取付けた例である。図１６では、実施の形態４のパワーモジュール２０において、熱遮断部材１２が配置されたケース４の上部に放熱器１１を取付けた例を示した。このような構成とすることで、実施の形態７のパワーモジュール２０は、実施の形態４よりも、さらに制御基板６、７の温度上昇を低減させることが可能となる。Embodiment 7 FIG.
FIG. 16 is a cross-sectional view showing a power module according to the seventh embodiment. The present embodiment is an example in which the radiator 11 is attached to the outside of the upper portion of the case 4 where the heat blocking member 12 is disposed. In FIG. 16, the example which attached the heat radiator 11 to the upper part of the case 4 in which the heat insulation member 12 was arrange | positioned in the power module 20 of Embodiment 4 was shown. With such a configuration, the power module 20 of the seventh embodiment can further reduce the temperature rise of the control boards 6 and 7 than the fourth embodiment.

なお、本発明は、その発明の範囲内において、各実施の形態を組み合わせたり、各実施の形態を適宜、変形、省略することが可能である。   It should be noted that the present invention can be combined with each other within the scope of the invention, and each embodiment can be modified or omitted as appropriate.

１、１ａ、１ｂ、１ｃ…パワー半導体素子、２…ベース板、
４…ケース、６…制御基板、７…制御基板、
８…制御基板、１１…放熱器、１２…熱遮断部材、
１３…熱遮断部材、２０…パワーモジュール。1, 1a, 1b, 1c ... power semiconductor element, 2 ... base plate,
4 ... Case, 6 ... Control board, 7 ... Control board,
8 ... Control board, 11 ... Radiator, 12 ... Heat insulation member,
13 ... heat shielding member, 20 ... power module.

Claims (8)

ベース板に実装されたパワー半導体素子と前記パワー半導体素子を制御する複数の制御基板とがケース内に配置されたパワーモジュールであって、
前記ベース板における前記パワー半導体素子が実装された実装面に対して略垂直に配置された複数の前記制御基板と、前記ケースの上部に設けられた熱遮断部材を備え、
一の前記制御基板は、少なくとも一つの他の前記制御基板に対して略垂直に配置され、
前記熱遮断部材は、一の前記制御基板と少なくとも一つの他の前記制御基板との間に延伸して配置されたことを特徴とするパワーモジュール。 A power module and the control board of the multiple that controls the power semiconductor element mounted on the base plate the power semiconductor elements are arranged in the case,
Comprising a plurality of said control board disposed substantially perpendicular to the power mounting surface on which a semiconductor element is mounted in front Symbol base plate, the heat block member provided in an upper portion of the case,
One control board is disposed substantially perpendicular to at least one other control board;
The power module , wherein the heat blocking member is extended between one control board and at least one other control board . ベース板に実装されたパワー半導体素子と前記パワー半導体素子を制御する複数の制御基板とがケース内に配置されたパワーモジュールであって、
前記ベース板における前記パワー半導体素子が実装された実装面に対して略垂直に配置された複数の前記制御基板と、前記ケースの上部に設けられた熱遮断部材を備え、
前記熱遮断部材は、一の前記制御基板と少なくとも一つの他の前記制御基板との間に延伸して配置され、
前記制御基板の少なくとも一つは、当該制御基板の高温側の面を前記ケースに向けたことを特徴とするパワーモジュール。 A power module in which a power semiconductor element mounted on a base plate and a plurality of control boards for controlling the power semiconductor element are arranged in a case,
A plurality of the control boards disposed substantially perpendicular to the mounting surface on which the power semiconductor element is mounted on the base plate, and a heat blocking member provided on the upper part of the case,
The heat blocking member is arranged to extend between one control board and at least one other control board,
At least one, features and to Rupa word module that with its hot side surface of the control board in the case of the control board. 前記熱遮断部材は、前記ケースと一体形成されたことを特徴とする請求項１または２に記載のパワーモジュール。 Power module according to claim 1 or 2, wherein the heat blocking member, characterized in that the is case and integrally formed. 前記熱遮断部材の両面に、前記熱遮断部材よりも熱伝導率の高い熱遮断部材を設けたことを特徴とする請求項１乃至３のいずれか１項に記載のパワーモジュール。 On both surfaces of the heat shield member, a power module according to any one of claims 1 to 3, characterized in that a heat shielding member having high thermal conductivity than said heat shield member. 放熱器を備え、
前記放熱器は、前記熱遮断部材が設けられた前記ケースの上部の外側に設けられたことを特徴とする請求項１乃至４のいずれか１項に記載のパワーモジュール。 With a radiator,
The radiator includes a power module according to any one of claims 1 to 4, characterized in that said heat shield member is provided on the outside of the top of the case provided. 前記実装面に対して略垂直に配置された少なくとも一つの前記制御基板における厚さ方向の面が対向する前記ケースの外周面であって、当該制御基板に近い側の外周面に、
放熱器が設けられたことを特徴とする請求項１乃至５のいずれか１項に記載のパワーモジュール。 The outer peripheral surface of the case facing the surface in the thickness direction of at least one of the control boards arranged substantially perpendicular to the mounting surface, on the outer peripheral surface near the control board,
The power module according to any one of claims 1 to 5 , wherein a radiator is provided. 前記パワー半導体素子は、ワイドバンドギャップ半導体材料により形成されていることを特徴とする請求項１乃至６のいずれか１項に記載のパワーモジュール。 The power module according to any one of claims 1 to 6 , wherein the power semiconductor element is formed of a wide band gap semiconductor material. 前記ワイドバンドギャップ半導体材料は、シリコンカーバイト、窒化ガリウム系材料、またはダイヤモンドのうちのいずれかであることを特徴とする請求項７記載のパワーモジュール。 8. The power module according to claim 7, wherein the wide band gap semiconductor material is one of silicon carbide, gallium nitride-based material, and diamond.
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