JP2016019333A - Cooling structure of power conversion system - Google Patents
Cooling structure of power conversion system Download PDFInfo
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- JP2016019333A JP2016019333A JP2014139832A JP2014139832A JP2016019333A JP 2016019333 A JP2016019333 A JP 2016019333A JP 2014139832 A JP2014139832 A JP 2014139832A JP 2014139832 A JP2014139832 A JP 2014139832A JP 2016019333 A JP2016019333 A JP 2016019333A
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- power conversion
- heat dissipation
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- 238000001816 cooling Methods 0.000 title claims abstract description 19
- 238000006243 chemical reaction Methods 0.000 title claims abstract description 15
- 239000004065 semiconductor Substances 0.000 claims abstract description 32
- 239000000758 substrate Substances 0.000 claims abstract description 9
- 230000017525 heat dissipation Effects 0.000 claims description 15
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims description 8
- 229910010271 silicon carbide Inorganic materials 0.000 claims description 8
- 229910002601 GaN Inorganic materials 0.000 claims description 3
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 claims description 3
- 229910003460 diamond Inorganic materials 0.000 claims description 3
- 239000010432 diamond Substances 0.000 claims description 3
- 230000005855 radiation Effects 0.000 abstract description 6
- 230000001788 irregular Effects 0.000 abstract 1
- 230000000630 rising effect Effects 0.000 abstract 1
- 238000000034 method Methods 0.000 description 8
- 230000020169 heat generation Effects 0.000 description 6
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 5
- 238000010586 diagram Methods 0.000 description 4
- 239000011889 copper foil Substances 0.000 description 3
- 229910052802 copper Inorganic materials 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 239000004020 conductor Substances 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000005476 soldering Methods 0.000 description 1
Classifications
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02B—CLIMATE CHANGE MITIGATION TECHNOLOGIES RELATED TO BUILDINGS, e.g. HOUSING, HOUSE APPLIANCES OR RELATED END-USER APPLICATIONS
- Y02B70/00—Technologies for an efficient end-user side electric power management and consumption
- Y02B70/10—Technologies improving the efficiency by using switched-mode power supplies [SMPS], i.e. efficient power electronics conversion e.g. power factor correction or reduction of losses in power supplies or efficient standby modes
Landscapes
- Cooling Or The Like Of Electrical Apparatus (AREA)
- Inverter Devices (AREA)
Abstract
Description
本発明は、電力変換装置の冷却構造に関し、特に、プリント基板にＳＩＣ（シリコンカーバイト）などの高いジャンクション温度を持つパワー半導体モジュールを実装した電力変換装置の冷却構造に関する。 The present invention relates to a cooling structure for a power conversion device, and more particularly to a cooling structure for a power conversion device in which a power semiconductor module having a high junction temperature such as SIC (silicon carbide) is mounted on a printed board.
従来、プリント基板に実装された電力変換装置において、高いジャンクション温度を持つパワー半導体素子に大電流を流す場合、通電パターンの発熱を低減させるために種々の工夫が施されている。通電パターンの発熱を低減させる場合、例えば通電パターン幅を広げて電気抵抗を下げることで発熱量を下げ、且つ、放熱面積を広げるという手法がとられている。 Conventionally, in a power conversion device mounted on a printed circuit board, when a large current is passed through a power semiconductor element having a high junction temperature, various devices have been devised in order to reduce the heat generation of the energization pattern. In order to reduce the heat generation of the energization pattern, for example, a technique is adopted in which the heat generation amount is reduced by widening the energization pattern width to lower the electrical resistance and the heat dissipation area is increased.
また通電パターンと並行に、銅バーやケーブルを接続することで通流部の抵抗値を下げつつ電流を分流させることで、発熱自体を低減させ、かつ放熱面積を増加させる手法も採用されている。 In parallel with the energization pattern, a method of reducing the heat generation and increasing the heat radiation area by diverting the current while lowering the resistance value of the conduction part by connecting a copper bar or cable is also adopted. .
下記の特許文献１に示された従来例には、通電パターンの発熱を放熱端子を介して、パワー半導体用のヒートシンクに放熱する技術が示されている。 The conventional example shown in the following Patent Document 1 discloses a technique for dissipating heat generated by the energization pattern to a heat sink for a power semiconductor through a heat dissipation terminal.
上記のような、通電パターン幅を広げて電気抵抗を下げることで発熱量を下げ、且つ、放熱面積を広げるといった手法では、基板面積を増加させることになるため、装置を小型化することが難しくなるという課題がある。 In the above-described method of widening the energization pattern width and reducing the electrical resistance to reduce the amount of heat generation and widen the heat dissipation area, the substrate area is increased, so it is difficult to reduce the size of the apparatus. There is a problem of becoming.
また通電パターンと並行に、銅バーやケーブルを接続することで通流部の抵抗値を下げつつ電流を分流させることで、発熱自体を低減させ、かつ放熱面積を増加させる手法も採用されている。しかし特に高圧回路の場合にこの手法を採用すると他部品との絶縁距離を確保することが困難になるという課題がある。 In parallel with the energization pattern, a method of reducing the heat generation and increasing the heat radiation area by diverting the current while lowering the resistance value of the conduction part by connecting a copper bar or cable is also adopted. . However, when this method is employed particularly in the case of a high-voltage circuit, there is a problem that it is difficult to secure an insulation distance from other parts.
その他の手法として、銅箔厚を標準のものより厚くした所謂大電流基板を用いる手法もあるが、ＳＭＴ（表面実装技術）の部品実装に制約が生じてしまい且つコストが高くなるといった問題もあった。 As another method, there is a method using a so-called large current substrate in which the thickness of the copper foil is thicker than a standard one, but there is a problem that the component mounting of SMT (surface mounting technology) is restricted and the cost is increased. It was.
また上記特許文献１に示された従来技術では、伝熱させる対象の温度がヒートシンク温度より高い場合にしか適用できない（効果がない）という問題がある。特に、高いジャンクション温度を持つパワー半導体がＳＩＣ（シリコンカーバイト）などである場合に、プリント基板の許容温度よりパワー半導体の許容温度の方が高くなるため、上記したいずれかの方法を用いたとしてもパターン温度を下げることが困難であるという課題があった。 Further, the conventional technique disclosed in Patent Document 1 has a problem that it can be applied only when the temperature of the target of heat transfer is higher than the heat sink temperature (no effect). In particular, when the power semiconductor having a high junction temperature is SIC (silicon carbide) or the like, the allowable temperature of the power semiconductor is higher than the allowable temperature of the printed circuit board. However, there is a problem that it is difficult to lower the pattern temperature.
そこで本発明は、プリント基板の通電パターンの温度上昇を効率的にかつ容易に低減し、低コストで信頼性の高い電力変換装置の冷却構造を提供することにある。 SUMMARY OF THE INVENTION Accordingly, it is an object of the present invention to provide a cooling structure for a power conversion device that can efficiently and easily reduce the temperature rise of a current-carrying pattern on a printed circuit board and that is low in cost and high in reliability.
上記課題を解決するために本発明の請求項１記載の発明は、電力変換を行うパワー半導体モジュールの主回路電流を通電するパターンを設けたプリント基板において、前記通電パターン上に基板実装タイプの端子台を熱的に装着し、前記端子台に放熱部材を取り付けることで、前記通電パターンに生じる発熱を基板外部に放出することを特徴とする。 In order to solve the above-mentioned problems, the invention according to claim 1 of the present invention is a printed circuit board provided with a pattern for energizing a main circuit current of a power semiconductor module that performs power conversion. The base plate is thermally mounted, and a heat radiating member is attached to the terminal block to release heat generated in the energization pattern to the outside of the substrate.
本発明の請求項２記載の発明は、上記請求項１記載の放熱部材が、底面部とこの底面部から上方に伸びるフィン部とを備えていることを特徴とする。
また本発明の請求項３記載の発明は、上記請求項１記載の放熱部材が、前記基板実装タイプの端子台と同形状であり、前記通電パターンに取り付けられた端子台に逆向きに取り付けられることを特徴とする。
According to a second aspect of the present invention, the heat dissipating member according to the first aspect includes a bottom surface portion and a fin portion extending upward from the bottom surface portion.
According to a third aspect of the present invention, the heat dissipating member according to the first aspect has the same shape as the terminal board of the board mounting type, and is attached in the opposite direction to the terminal base attached to the energization pattern. It is characterized by that.
また本発明の請求項４記載の発明は、請求項１記載の放熱部材が、前記基板実装タイプの端子台よりも放熱面積が大きいことを特徴とする。
本発明の請求項５記載の発明は、上記請求項１記載の端子台および放熱部材が、前記通電パターンに生じる発熱量に応じて複数個取り付けられるようにしたことを特徴とする。
The invention according to claim 4 of the present invention is characterized in that the heat dissipating member according to claim 1 has a heat dissipating area larger than that of the board mount type terminal block.
A fifth aspect of the present invention is characterized in that a plurality of the terminal blocks and the heat radiating member according to the first aspect are attached in accordance with the amount of heat generated in the energization pattern.
本発明の請求項６記載の発明は、上記請求項２記載の放熱部材が、側面視Ｕ字形状であることを特徴とする。
本発明の請求項７記載の発明は、上記請求項６記載の放熱部材が、前記フィン部の頂部が外向きに開かれた放熱板であることを特徴とする。
The invention described in claim 6 of the present invention is characterized in that the heat dissipating member described in claim 2 is U-shaped in a side view.
The invention according to claim 7 of the present invention is characterized in that the heat dissipating member according to claim 6 is a heat dissipating plate in which the top of the fin portion is opened outward.
本発明の請求項８記載の発明は、上記請求項１記載のパワー半導体モジュールが、ワイドバンドギャップ半導体によって形成された素子を含んで成ることを特徴とする。
本発明の請求項９記載の発明は、上記請求項８記載のワイドバンドギャップ半導体によって形成された素子が、炭化ケイ素、窒化ガリウム、またはダイアモンドにより形成されたものであることを特徴とする。
According to an eighth aspect of the present invention, the power semiconductor module according to the first aspect includes an element formed of a wide band gap semiconductor.
The invention described in claim 9 of the present invention is characterized in that the element formed of the wide band gap semiconductor according to claim 8 is formed of silicon carbide, gallium nitride, or diamond.
本発明によれば、プリント基板主回路パターンの放熱を効果的に行うことができ、特に、直接プリント基板に放熱器を実装する場合に比べると、プリント基板への取り付けを考慮する必要がなくなるため、放熱器の形状に自由度を持たせること可能となる一方、プリント基板実装型の端子台は実装が容易であり、実装不良になることがないという利点を有する。 According to the present invention, it is possible to effectively dissipate heat from the printed circuit board main circuit pattern. In particular, it is not necessary to consider mounting on the printed circuit board as compared with the case where a heat sink is directly mounted on the printed circuit board. While it is possible to give flexibility to the shape of the radiator, the printed circuit board mounting type terminal block has an advantage that it is easy to mount and does not cause mounting failure.
その結果、プリント基板の通電パターンの温度上昇を効率的にかつ容易に低減し、低コストで信頼性の高い電力変換装置の冷却構造を提供することが可能となる。 As a result, it is possible to efficiently and easily reduce the temperature rise of the energization pattern of the printed circuit board, and to provide a low-cost and highly reliable cooling structure for a power conversion device.
以下、本発明の実施の形態について、詳細に説明する。
図１は、本発明の実施形態に用いるプリント基板の部品配置例を示す図であり、図２は、当該プリント基板の裏面に配置された通電パターンの例を示す図である。
Hereinafter, embodiments of the present invention will be described in detail.
FIG. 1 is a diagram illustrating an example of component placement of a printed circuit board used in the embodiment of the present invention, and FIG. 2 is a diagram illustrating an example of an energization pattern disposed on the back surface of the printed circuit board.
図１および図２に示されるプリント基板に実装される電力変換装置は、高いジャンクション温度を持つパワー半導体モジュールで構成され、例えば、ＳｉＣ（炭化ケイ素）で構成されたＭＯＳＦＥＴ（電界効果トランジスタ）から成るモジュール例について説明する。ここで説明するＳｉＣ-ＭＯＳＦＥＴから成るパワー半導体モジュールの例に限らず、他のパワー半導体モジュールであっても良い。例えば半導体モジュールが、窒化ガリウム、ダイアモンド等で構成されたものであってもよい。 The power converter mounted on the printed circuit board shown in FIGS. 1 and 2 is composed of a power semiconductor module having a high junction temperature, and is composed of, for example, a MOSFET (field effect transistor) composed of SiC (silicon carbide). An example of a module will be described. The power semiconductor module is not limited to the power semiconductor module made of SiC-MOSFET described here, but may be another power semiconductor module. For example, the semiconductor module may be composed of gallium nitride, diamond, or the like.
図１に示されたプリント基板には、電力変換動作を行うパワー半導体モジュール１が主回路パターンとしてプリント基板上に矩形破線で囲まれた位置に配置・装着され、パワー半導体モジュール１の通電パターンに接続される基板実装型端子台２が放熱機能を備える部品として円形実線で囲まれた位置に一例として配置・装着される。図１に示されたプリント基板には、パワー半導体モジュール１や基板実装型端子台２以外の部品もレイアウトされているが本発明の実施形態に直接は関係しないのでその説明を省略する。 In the printed circuit board shown in FIG. 1, a power semiconductor module 1 that performs a power conversion operation is disposed and mounted as a main circuit pattern at a position surrounded by a rectangular broken line on the printed circuit board. The board-mounted terminal block 2 to be connected is arranged and mounted as an example at a position surrounded by a circular solid line as a component having a heat radiation function. Although components other than the power semiconductor module 1 and the board mounting type terminal block 2 are also laid out on the printed board shown in FIG. 1, the description thereof is omitted because it is not directly related to the embodiment of the present invention.
図２は、図１に示されたプリント基板の裏面に設けられた、例えば銅箔で形成された通電パターンを示す図であり、適所に位置決めや半田付けのためのスルーホールが設けられている。なおこのようなプリント基板の裏面に銅箔からなるパターンを設けること自体は、その具体的な配置（レイアウト）例を除いて当業者によく知られているのでその説明を省略するものとする。 FIG. 2 is a diagram showing a current-carrying pattern formed of, for example, copper foil provided on the back surface of the printed board shown in FIG. 1, and through holes for positioning and soldering are provided at appropriate positions. . It is to be noted that providing a pattern made of copper foil on the back surface of such a printed circuit board is well known to those skilled in the art except for a specific arrangement (layout) example thereof, and therefore the description thereof will be omitted.
図３は、本発明の実施形態に係る電力変換装置の冷却構造の具体例を示す斜視図であり、図１に示した放熱用の基板実装型端子台２と同一の端子台を逆向きにして装着した端子台３の例、および、異形状（例．頂部が外向きに開かれた端子板）の放熱用の基板実装台４をネジ止めして放熱器として使用する例、をそれぞれ斜視図により示している。図３には、本発明に直接関係しない部品もプリント基板に装着されているが、それらの部品についての説明については割愛することにする。 FIG. 3 is a perspective view showing a specific example of the cooling structure of the power conversion device according to the embodiment of the present invention, in which the same terminal block as the substrate mounting type terminal block 2 for heat dissipation shown in FIG. The example of the terminal block 3 mounted in this way and the example of using the board mounting base 4 for heat dissipation having a different shape (eg, the terminal plate with the top portion opened outward) as a heat sink by screwing are respectively perspective. This is shown in the figure. In FIG. 3, components not directly related to the present invention are also mounted on the printed circuit board, but the description of these components will be omitted.
図３に示した端子台３の具体例は、普通では基板実装型端子台として使用されているものであるがそれを逆向きにしてプリント基板に装着しその端子を放熱フィンとして使用する端子台３、およびまたは、端子台の形状を異形（例．頂部が外向きに開かれた放熱板）にして放熱用の基板実装台４とするためにネジ止めして使用する。 The specific example of the terminal block 3 shown in FIG. 3 is normally used as a board mounting type terminal block. However, the terminal block 3 is mounted on a printed circuit board in the reverse direction and the terminal is used as a radiation fin. 3 and / or a terminal block having a different shape (e.g., a heat radiating plate whose top is opened outward) to be used as a board mounting base 4 for heat dissipation.
図４は、図３に示した端子台３を拡大して示した斜視図である。さらに図５は、ネジを外し図４と異なるアングルから観た図３に示した端子台３を拡大して示した斜視図である。また図６は、図５に示した端子台３の様子を示す平面図（ａ）、正面図（ｂ）および側面図（ｃ）である。これらの図５及び図６に示された構造によって図３に示された端子台３が有する冷却構造が明らかとなろう。 4 is an enlarged perspective view of the terminal block 3 shown in FIG. FIG. 5 is an enlarged perspective view of the terminal block 3 shown in FIG. 3 as viewed from an angle different from that of FIG. 6 is a plan view (a), a front view (b), and a side view (c) showing the state of the terminal block 3 shown in FIG. The cooling structure of the terminal block 3 shown in FIG. 3 will be clarified by the structure shown in FIGS.
図７は、図３に示した放熱用の基板実装台４を拡大して示した斜視図であり、端子台の頂部が外向きに開かれた端子板を有してネジ止めされる構成となっていることが明らかであろう。 FIG. 7 is an enlarged perspective view of the substrate mounting table 4 for heat dissipation shown in FIG. 3, and the top of the terminal block has a terminal plate opened outward and is screwed. It will be clear that
上記したように図４及び図７に示した端子台では、端子台の頂部に差し込まれたネジを含んで放熱器が形成されている例を示したが、これをさらに発展させて、例えば図示省略しているが、同一ネジ径を持ち更に形状を異ならせた端子台にしても良いし、また端子台に代えてプリント基板に同一ネジ径でネジ止めされる放熱性に優れた金属導体を設ける形状にしても良い。 As described above, in the terminal block shown in FIG. 4 and FIG. 7, the example in which the radiator is formed including the screw inserted into the top of the terminal block is shown. Although omitted, a terminal block having the same screw diameter and a different shape may be used, or a metal conductor excellent in heat dissipation that is screwed to the printed circuit board with the same screw diameter instead of the terminal block. The shape may be provided.
図８は、図１に示したパワー半導体モジュールの具体例としてのＳｉＣ-ＭＯＳＦＥＴモジュールの構成例を示す図であり、ＳｉＣ-ＭＯＳＦＥＴモジュールがパワー半導体モジュールパッケージ１０内に納められ、ＳｉＣ-ＭＯＳＦＥＴモジュールに設けられているピン２１〜２５をモジュールパッケージ１０外に突出させている。 FIG. 8 is a diagram illustrating a configuration example of an SiC-MOSFET module as a specific example of the power semiconductor module illustrated in FIG. 1. The SiC-MOSFET module is housed in the power semiconductor module package 10, and the SiC-MOSFET module is included in the SiC-MOSFET module. The provided pins 21 to 25 are protruded outside the module package 10.
このパワー半導体モジュールは図２に示すプリント基板の裏面側に装着される。具体的には、パワー半導体モジュールのピン２１〜２５は、プリント基板の裏面側から、プリント基板の部品配置面側と裏面側との電気的接続を行うためのスルーホールに挿入された後、半田付される。したがって、図１に示すプリント基板の部品配置面側には、図３に示すようにパワー半導体モジュールのピン２１〜２５の頂部のみが現れている。 This power semiconductor module is mounted on the back side of the printed board shown in FIG. Specifically, the pins 21 to 25 of the power semiconductor module are inserted from the back surface side of the printed circuit board into through holes for electrical connection between the component placement surface side and the back surface side of the printed circuit board, and then soldered. Attached. Therefore, only the tops of the pins 21 to 25 of the power semiconductor module appear on the component placement surface side of the printed board shown in FIG. 1 as shown in FIG.
また、このパワー半導体モジュールの底面は放熱用の冷却面であり、この面に冷却体（不図示）が熱的に装着される。この冷却体には放熱フィンが取り付けられており、半導体素子で発生する熱の大部分は、この放熱フィンを介して外気に放熱される。 Further, the bottom surface of the power semiconductor module is a cooling surface for heat dissipation, and a cooling body (not shown) is thermally attached to this surface. A radiating fin is attached to the cooling body, and most of the heat generated in the semiconductor element is radiated to the outside air through the radiating fin.
１ パワー半導体モジュール
２ 基板実装型端子台
３ 逆向き装着の基板実装型端子台
４ 異形状の基板実装型端子台
１０ パワー半導体モジュールパッケージ
DESCRIPTION OF SYMBOLS 1 Power semiconductor module 2 Board mounting type terminal block 3 Reverse mounting board mounting type terminal block 4 Different shape board mounting type terminal block 10 Power semiconductor module package
Claims (9)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2014139832A JP6503650B2 (en) | 2014-07-07 | 2014-07-07 | Power converter cooling structure |
Applications Claiming Priority (1)
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109342499A (en) * | 2018-10-08 | 2019-02-15 | 郑州云海信息技术有限公司 | The resistance to through-flow method for testing performance of CCL, system, device and readable storage medium storing program for executing |
| JP2021065029A (en) * | 2019-10-15 | 2021-04-22 | 住友重機械工業株式会社 | Power conversion device |
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|---|---|---|---|---|
| JP2009017624A (en) * | 2007-07-02 | 2009-01-22 | Yaskawa Electric Corp | Motor controller |
| JP2009289734A (en) * | 2008-04-30 | 2009-12-10 | Daikin Ind Ltd | Electric circuit connection member |
| WO2013179403A1 (en) * | 2012-05-30 | 2013-12-05 | 三洋電機株式会社 | Wiring substrate |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| JP2009017624A (en) * | 2007-07-02 | 2009-01-22 | Yaskawa Electric Corp | Motor controller |
| JP2009289734A (en) * | 2008-04-30 | 2009-12-10 | Daikin Ind Ltd | Electric circuit connection member |
| WO2013179403A1 (en) * | 2012-05-30 | 2013-12-05 | 三洋電機株式会社 | Wiring substrate |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109342499A (en) * | 2018-10-08 | 2019-02-15 | 郑州云海信息技术有限公司 | The resistance to through-flow method for testing performance of CCL, system, device and readable storage medium storing program for executing |
| CN109342499B (en) * | 2018-10-08 | 2021-03-26 | 苏州浪潮智能科技有限公司 | CCL (continuous liquid chromatography) through-flow resistance detection method, system and device and readable storage medium |
| JP2021065029A (en) * | 2019-10-15 | 2021-04-22 | 住友重機械工業株式会社 | Power conversion device |
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