WO2013172183A1 - Module de puissance - Google Patents

Module de puissance Download PDF

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Publication number
WO2013172183A1
WO2013172183A1 PCT/JP2013/062372 JP2013062372W WO2013172183A1 WO 2013172183 A1 WO2013172183 A1 WO 2013172183A1 JP 2013062372 W JP2013062372 W JP 2013062372W WO 2013172183 A1 WO2013172183 A1 WO 2013172183A1
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WO
WIPO (PCT)
Prior art keywords
control board
heat
power module
semiconductor element
control
Prior art date
Application number
PCT/JP2013/062372
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English (en)
Japanese (ja)
Inventor
宏之 和久
幸司 吉瀬
Original Assignee
三菱電機株式会社
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Publication date
Application filed by 三菱電機株式会社 filed Critical 三菱電機株式会社
Priority to JP2014515561A priority Critical patent/JP5851599B2/ja
Publication of WO2013172183A1 publication Critical patent/WO2013172183A1/fr

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
    • H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/07—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L29/00
    • H01L25/072—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L29/00 the devices being arranged next to each other
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48135—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
    • H01L2224/48137—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being arranged next to each other, e.g. on a common substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/13—Discrete devices, e.g. 3 terminal devices
    • H01L2924/1304—Transistor
    • H01L2924/1305—Bipolar Junction Transistor [BJT]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/13—Discrete devices, e.g. 3 terminal devices
    • H01L2924/1304—Transistor
    • H01L2924/1305—Bipolar Junction Transistor [BJT]
    • H01L2924/13055—Insulated gate bipolar transistor [IGBT]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/13—Discrete devices, e.g. 3 terminal devices
    • H01L2924/1304—Transistor
    • H01L2924/1306—Field-effect transistor [FET]
    • H01L2924/13091—Metal-Oxide-Semiconductor Field-Effect Transistor [MOSFET]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181—Encapsulation

Definitions

  • the present invention relates to a power module in which a power semiconductor element and a control board are arranged in the same package.
  • a power semiconductor element (power module 2 of Patent Document 1) is mounted on a base plate, and the power semiconductor element and a control board are arranged in a cover.
  • a semiconductor device including a first heat blocking member, a second heat blocking member, and a heat insulating layer is described.
  • the semiconductor device of Patent Document 1 corresponds to a power module in which a power semiconductor element and a control board are arranged in the same package.
  • the semiconductor device disclosed in Patent Literature 1 includes a first heat blocking member disposed so as to cover the power semiconductor element on the base plate, and a second heat blocking member disposed so as to cover the upper surface of the first heat blocking member.
  • a heat insulating layer formed between the member and the first heat blocking member and the second heat blocking member, and at least one of the first heat blocking member and the second heat blocking member has excellent thermal conductivity
  • the control board is disposed on the second heat shielding member while being fixed to the base plate at the lower end thereof by contacting with the base plate. With such a configuration, heat transfer from the power semiconductor element to the control board is blocked by the first heat blocking member, the second heat blocking member, and the heat insulating layer.
  • a power semiconductor element (power semiconductor element 1 of Patent Document 2) is mounted on a heat sink, and the power semiconductor element and a control board are disposed in a case.
  • a power module including a heat shielding sheet material in which the heat resistance in the surface direction for transmitting heat generated by the power semiconductor element to the outside of the case is lower than that in the thickness direction.
  • the end of the heat shielding sheet material is connected to the upper part of the radiator plate, the case is filled with the gel-like filler, and the heat of the power semiconductor element that has conducted the gel-like filler is heated.
  • the heat Prior to raising the temperature of the control circuit arranged in the thickness direction of the shielding sheet material, the heat is transported in the surface direction.
  • JP 2006-339352 A (0005 to 0012 stages, FIG. 1)
  • Japanese Patent Laid-Open No. 2003-298209 (0007 to 0019, FIG. 1)
  • the heat transfer from the power semiconductor element to the control board via air includes heat conduction, convection, and radiation.
  • the area of the control board facing the power semiconductor element is large, and thus the amount of heat transferred from the power semiconductor element is very large. Further, there is a problem that heat is accumulated between the control board and the power semiconductor element, the air temperature in the vicinity of the power semiconductor element is increased, and the temperature of the power semiconductor element is increased.
  • a power module with multiple control boards can be considered.
  • the conventional power module does not consider the heat insulation between a plurality of control boards and the improvement of heat dissipation. For example, when a plurality of control boards are arranged in parallel to the power semiconductor element, the temperature of the control board rises due to heat generated by a control IC or the like mounted on the control board, and heat is input from another control board. There was a problem that the heat radiation of the control board could not be sufficiently performed.
  • the present invention has been made to solve the above-described problems, and reduces heat input from the power semiconductor element and other control boards to the control board, thereby improving the heat dissipation of the control board.
  • the object is to reduce the temperature of the control board and obtain a highly reliable power module.
  • a power semiconductor element mounted on a base plate and one or a plurality of control boards for controlling the power semiconductor elements are arranged in a case, and at least one control board is a power semiconductor in the base board. It is characterized by being arranged substantially perpendicular to the mounting surface on which the element is mounted.
  • the power module of the present invention since at least one control board is disposed substantially perpendicular to the mounting surface of the base plate, the area facing the power semiconductor element on the control board can be reduced, and Heat transfer due to heat conduction and radiation can be reduced. Further, according to the power module of the present invention, since the space above the power semiconductor element can be widened, it is difficult for heat to be trapped, and an increase in the air temperature in the vicinity of the power semiconductor element is suppressed. The amount of heat input from the power semiconductor element to the control board can be further reduced, the temperature of the control board can be lowered, and the reliability of the power module can be improved.
  • FIG. 1 is a cross-sectional view of a power module according to Embodiment 1 of the present invention.
  • the power module 20 includes an insulating substrate (a ceramic substrate or the like) on which a power semiconductor element 1 based on a wide band gap semiconductor material such as silicon (Si) or silicon carbide (SiC) is disposed on a base plate 2. (Not shown) is mounted by solder.
  • the power module 20 includes a power semiconductor element 1, a base plate 2, a main terminal 3, a case 4, a control board 6 on which a control IC 9 is mounted, and a sealing material 5 that seals the power semiconductor element 1. .
  • FIG. 1 shows an example in which there are three power semiconductor elements 1, two main terminals 3, and three control ICs 9.
  • the reference numerals of the power semiconductor elements are 1 as a whole, and 1a, 1b, and 1c are used when they are distinguished from each other.
  • the reference numerals of the main terminals are generally 3 and 3a and 3b are used in the case of distinguishing and explaining.
  • the reference numeral of the control IC is 9 as a whole, and 9a, 9b, and 9c are used in the case of distinction.
  • the base plate 2 is usually made of a metal having a high thermal conductivity such as a copper plate.
  • a metal having a high thermal conductivity such as a copper plate.
  • the power semiconductor element 1 is sealed with a gel-like sealing material 5, and a control substrate 6 on which a control IC 9 for controlling the power semiconductor element 1 is mounted is disposed above the power semiconductor element 1. ing.
  • the power semiconductor element 1 and the control board 6 are accommodated in a single package by the case 4.
  • the case 4 includes, for example, a frame body 31 and a lid 32.
  • the case 4 is often made of a resin having insulation and heat resistance, such as polyphenylene sulfide (PPS).
  • the main terminals 3a and 3b fixed to the case 4 are electrically connected to the power semiconductor elements 1a, 1b and 1c via an aluminum bonding wire 10 and a relay terminal (not shown).
  • a lead frame made of a highly conductive metal such as copper or aluminum may be used.
  • the power semiconductor element 1b is electrically connected to the power semiconductor elements 1a and 1c via the aluminum bonding wires 10.
  • the power semiconductor element 1 is electrically connected to the control board 6 via the main terminal 3, the bonding wire 10, and the relay terminal, and the power semiconductor elements are respectively controlled by the control ICs 9a, 9b, and 9c on the control board 6. The switching operation of 1a, 1b, 1c is controlled.
  • a single control board 6 mounted above the power semiconductor element 1 is disposed substantially perpendicular to the surface of the base plate 2, that is, the mounting surface of the base plate 2 on which the power semiconductor element 1 is mounted. Yes.
  • the heat input from the power semiconductor element 1 to the control board 6 is reduced as much as possible, and since the wide surface of the control board 6 is not opposed to the power semiconductor element 1, heat radiation is promoted from both sides of the control board 6. The heat dissipation of 6 is not deteriorated.
  • control board 6 is attached substantially perpendicular to the mounting surface of the base plate 2, so that heat from the power semiconductor element 1 is not easily transmitted to the control board 6, and the control board 6 It is possible to dissipate heat from both sides and to improve heat dissipation by increasing the heat dissipating area, the temperature rise of the control board 6 can be greatly reduced.
  • the power semiconductor element 1 may be a general element based on a silicon wafer.
  • the power semiconductor element 1 has a band gap as compared with silicon such as silicon carbide (SiC), gallium nitride (GaN) -based material, or diamond.
  • SiC silicon carbide
  • GaN gallium nitride
  • a wide so-called wide band gap semiconductor material can be applied.
  • the device type is not particularly limited, but switching elements such as IGBTs (Insulated Gate Bipolar Transistors) and MOSFETs (Metal Oxide Semiconductor Field-Effect-Transistors) and rectifying elements such as diodes may be mounted. it can.
  • the power semiconductor element 1 functioning as a switching element or a rectifying element
  • Si silicon carbide
  • GaN gallium nitride
  • diamond diamond
  • the power semiconductor element 1 functioning as a switching element or a rectifying element
  • Si silicon
  • the efficiency of the power module 20 can be increased.
  • the withstand voltage is high and the allowable current density is high
  • the power module 20 can be downsized.
  • the wide band gap semiconductor element has high heat resistance, it can operate at a high temperature, and the heat dissipating fins can be downsized and the water cooling part can be air-cooled. Miniaturization is possible.
  • FIG. 2 is a relationship diagram between the angle of the control board and the radiation amount of the present invention.
  • the control board 6 is preferably perpendicular to the surface of the base plate 2 on which the power semiconductor element 1 is mounted. However, considering the influence of radiation, the control board 6 is ⁇ By tilting to an angle within 30 ° (60 ° to 120 ° in FIG. 2), the amount of heat transfer of radiation can be reduced to half or less. As described above, when the control board is arranged in parallel to the mounting surface of the base plate 2 if it is substantially perpendicular to the mounting surface of the base plate 2 on which the power semiconductor element 1 is mounted (0 ° in FIG. 2). Or 180 °), the effect of reducing the temperature rise of the control board can be obtained.
  • control substrate 6 faces the power semiconductor element 1 on the control substrate 6 by providing an inclination so that the control substrate 6 does not become parallel to the plane perpendicular to the power semiconductor element 1 even when it is ⁇ 30 ° or more. This is effective in reducing the temperature rise of the control board 6.
  • positioning angle of the base board 2 and a control board is the same also in other embodiment.
  • FIG. 3 is a diagram showing an example of a control board support method according to the first embodiment of the present invention.
  • the power module 20 of the first embodiment is provided with a groove 19 for supporting the control board 6 in the frame 31 of the case 4, and the control board 6 is supported by inserting the control board 6 into the groove 19. Yes.
  • FIG. 4 is a diagram showing a connector according to Embodiment 1 of the present invention.
  • the connector 14 is provided at the end of the control board that is in contact with the groove 19 provided in the frame 31 of the case 4, and similarly, the connector 15 is provided on the side of the case 4.
  • the connector 14 of the control board 6 is connected to the control IC 9 by a bonding wire 10.
  • the connector 15 on the case 4 side is connected to the power part (power semiconductor element 1) by aluminum bonding (bonding wire 10) or a frame so as to be electrically connected to the power part (power semiconductor element 1).
  • a terminal or the like may be attached inside the case 4 or outside the case 4 and electrically connected from the power semiconductor element 1 to the groove 19 of the case 4. Thereby, the control board 6 and the power semiconductor element 1 can be electrically connected.
  • FIG. 5 is a diagram showing another connector according to the first embodiment of the present invention.
  • FIG. 5 shows an example in which the connector 16 is provided in a direction substantially perpendicular to the control board 6 and the connector 16 is electrically connected to the relay terminal 17 that is electrically connected to the power semiconductor element 1.
  • the connector 16 of the control board 6 is connected to the control IC 9 by a bonding wire 10.
  • the control board 6 and the power semiconductor element 1 are electrically connected by electrically connecting the connector 16 electrically connected to the control board 6 and the relay terminal 17 electrically connected to the power semiconductor element 1. Can be connected.
  • control board 6 and the power semiconductor element 1 may be connected by a bonding wire, a frame having good conductivity, a relay terminal, or the like, in addition to the above method.
  • the connection method between the power semiconductor element 1 and the control board 6 is the same in the other embodiments, and may be used in combination as appropriate.
  • the power semiconductor element 1 mounted on the base plate 2 and one or more control boards 6 for controlling the power semiconductor element 1 are arranged in the case 4.
  • the at least one control board 6 is disposed substantially perpendicular to the mounting surface of the base plate 2 on which the power semiconductor element 1 is mounted, so that heat dissipation is improved and the temperature of the control board is increased.
  • the reliability of the power module 20 can be improved.
  • FIG. FIG. 6 is a cross-sectional view of a power module according to Embodiment 2 of the present invention.
  • the power module 20 of the second embodiment is different from that of the first embodiment in that a plurality of control boards 6 and 7 are mounted.
  • FIG. 6 shows an example in which the control IC 9 a is mounted on the control board 6 and the control IC 9 b is mounted on the control board 7.
  • the plurality of control boards 6 and 7 are all arranged substantially perpendicular to the mounting surface of the base plate 2, and the control board 6 and the control board 7 are arranged in parallel.
  • the heat input area from the power semiconductor element 1 to the control board 6 can be greatly reduced.
  • heat input from the power semiconductor element 1 can be reduced as much as possible.
  • the control board 6 is not sandwiched between the power semiconductor element 1 and the other control board 7 and both sides can dissipate heat, the heat radiation performance is not deteriorated.
  • the temperature of the control boards 6 and 7 is increased. It is possible to greatly reduce the rise.
  • FIG. 7 is a diagram illustrating an example of a control board support method according to the second embodiment of the present invention.
  • the power module 20 according to the second embodiment has a plurality of control boards mounted thereon, and grooves 19 for supporting the control boards are provided in the case 4 by the number of boards to be mounted, and the control boards are inserted into the grooves 19. By doing so, the control board is supported.
  • FIG. 6 shows an example in which two control boards 6 and 7 are arranged in parallel
  • FIG. 7 shows an example in which three control boards 6, 7, and 8 are arranged in parallel.
  • FIG. 8 is a cross-sectional view of another power module according to the second embodiment of the present invention.
  • FIG. 9 is a plan view of the power module of FIG. 8 and is a plan view of the case 4 with the lid 32 removed.
  • the control ICs 9 a and 9 b are mounted on the control board 6, and the control IC 9 c is mounted on the control board 7.
  • FIG. 9 shows an example in which there are three main terminals 3a, 3b, and 3c.
  • FIG. 8 shows an example in which the main terminal 3c overlaps behind the main terminal 3a (the back side of the paper surface in FIG. 8).
  • FIG. 10 is a diagram showing an example of a method of supporting the control board according to the second embodiment of the present invention, and shows a method of supporting the control boards 6 and 7 in the power module 20 shown in FIGS. is there.
  • a support member 18 provided with a groove 33 is fixed to the base plate 2 or the frame 31 of the case 4 below the control board 6, and the control board 6 is sandwiched between the grooves 33 to support the control board 6. 8 and 9, an example in which the support member 18 is fixed to the frame body 31 of the case 4 is shown.
  • a groove 34 for receiving the control board 6 is provided in the lid 32 of the upper case 4 to support the control board 6 at a plurality of locations. It was.
  • control board 6 you may support by only one point of the support member 18, and you may support the control board 6 in multiple places by providing the support member 18 with two or more. Note that the method shown in FIG. 7 was applied as a method of supporting the control board 7.
  • the method for supporting the control boards 6, 7, and 8 shown in FIG. 7 and the method for supporting the control boards 6, 7 shown in FIG. 10 are the same in the other embodiments, and may be used in appropriate combinations.
  • the heat input area from the power semiconductor element 1 to the control board 6 can be greatly reduced, and the heat input area from other control boards 7 is also greatly increased. Therefore, heat input from the power semiconductor element 1 and the other control board 7 can be reduced as much as possible with respect to one control board 6. Further, since the control board 6 is not sandwiched between the power semiconductor element 1 and the other control board 7 and both sides can dissipate heat, the heat radiation performance is not deteriorated. By arranging the plurality of control boards 6 and 7 substantially perpendicular to the mounting surface of the base plate 2, when the plurality of control boards 6 and 7 are mounted, the temperature rise of the control boards 6 and 7 is greatly increased. It can be reduced.
  • control boards 6 and 7 or the control boards 6, 7, and 8 are arranged substantially perpendicular to the mounting surface of the base plate 2 when a plurality of control boards are mounted.
  • at least one control board 6 may be arranged substantially perpendicular to the mounting surface of the base plate 2.
  • the control board 7, which consumes less power than the control board 6, may be disposed at a position where the heat input from the power semiconductor element 1 is low or a position where the heat input from the control board 6 is low.
  • FIG. 11 is a cross-sectional view of a power module according to Embodiment 3 of the present invention.
  • the power module 20 according to the third embodiment has a radiator 11 such as a heat sink attached to the side surface of the case 4 that is positioned substantially parallel to at least one of the control boards.
  • the radiator 11 is attached to the outer peripheral surface of the case 4, which faces the thickness direction of the control board 7, and is close to the control board 7.
  • FIG. 11 shows an example in which a plurality of control boards 6 and 7 are mounted, and the control IC 9a mounted on the control board 6 and the control IC 9b mounted on the control board 7 are arranged to face each other.
  • a plurality of radiators 11 may be disposed on the side surface of the case 4.
  • the temperature of the side surface of the case 4 located substantially parallel to the control board 7 can be lowered, and therefore, the heat of the control board 7 can be radiated to the case 4 having a low temperature. And the heat dissipation is improved.
  • the radiator 11 By mounting the radiator 11 on the case 4 positioned substantially parallel to the control board 7 in this way, the substrate temperature rise due to heat generation of elements such as the control IC 9b on the control board 7 is reduced as much as possible by improving the heat dissipation. It becomes possible to make it.
  • the angle at which the control board 7 and the side surface of the case 4 are substantially parallel is, for example, an angle within 30 °.
  • FIG. 12 is a cross-sectional view of another power module according to Embodiment 3 of the present invention. 12 shows at least one of the control boards 6 and 7 arranged substantially perpendicular to the mounting surface of the base plate 2, for example, the control board 7 on the high temperature side surface on which the control IC 9b is mounted. Is directed to the side of the case 4 opposite to the side on which the other control board 6 is located.
  • FIG. 12 the example which attached the heat radiator 11 to the side surface of case 4 facing the surface of the high temperature side in which control IC9b etc. are mounted was shown.
  • the low-temperature side surface (the surface on which the control IC 9 or the like is not mounted) of the control board 7 faces the other control board 6 side. It becomes possible to suppress movement. Furthermore, the effect can be further enhanced by directing the low temperature side of all the control boards 6 and 7 inward. If the radiator 11 is attached to the case 4, the heat dissipation from the case 4 is further improved.
  • FIG. 13 is a cross-sectional view showing a power module according to the fourth embodiment.
  • a power module 20 in which a heat blocking member 12 is provided between a plurality of control boards 6 and 7 is shown.
  • the heat shielding member 12 is attached substantially perpendicularly to the upper portion of the case 4, and the heat shielding member 12 is extended between the plurality of control boards 6 and 7.
  • the heat shield member 12 may be integrally formed with the case 4.
  • one or more heat blocking members 12 are provided.
  • the angle at which the control board 6 and the control board 7 are substantially parallel is, for example, an angle within 30 °.
  • the heat blocking member 12 is arranged so that all the control boards are substantially parallel to the control boards. It is desirable to add.
  • the plurality of control boards 6 and 7 are not limited to being arranged in parallel, but may be substantially parallel, and the heat blocking member 12 may be between the plurality of control boards 6 and 7. Further, since the heat blocking member 12 is intended to block heat between the control boards, it is desirable that the heat blocking member 12 has a size substantially equal to or larger than that of the control boards 6 and 7.
  • the high-temperature side surface on which the control IC 9 a or the like on the control board 6 is mounted and the high-temperature side surface on the control board 7 on which the control IC 9 b or the like is mounted are opposed to each other via the heat blocking member 12.
  • the heat blocking member 12 can block heat from one control board to the other control board, for example, heat from the control board 6 to the control board 7, so that heat dissipation of the control boards 6 and 7 is improved.
  • the temperature of the control boards 6 and 7 can be lowered, and the reliability of the power module 20 can be improved.
  • the arrangement of the high-temperature side surface on which the control IC 9a and the like are mounted on the control board 6 and the high-temperature side surface on which the control IC 9b and the like are mounted on the control board 7 are not limited to the example of FIG.
  • the power module 20 according to the fourth embodiment arranges the plurality of control boards 6 and 7 so as to be substantially perpendicular to the mounting surface of the base plate 2, thereby receiving heat input from the power semiconductor element 1.
  • the wide surfaces of the control boards 6 and 7 are not opposed to the power semiconductor element 1, so that heat is radiated from both sides of the control boards 6 and 7.
  • the power module 20 according to the fourth embodiment includes the heat blocking member 12 between the plurality of control boards 6 and 7, so that the heat transfer between the control boards can be blocked, compared to the case where the heat blocking member 12 is not provided. The heat dissipation of the control boards 6 and 7 can be improved, the temperature of the control boards 6 and 7 can be lowered, and the reliability of the power module 20 can be improved.
  • FIG. FIG. 14 is a cross-sectional view showing a power module according to the fifth embodiment.
  • the heat blocking member 12 is sandwiched between the heat blocking members 13 having higher thermal conductivity than the heat blocking member 12 such as metal.
  • the heat blocking member 12 is a resin having a low thermal conductivity
  • the structure is preferably sandwiched between the heat blocking members 13 having a high thermal conductivity such as metal.
  • the heat shielding member 12 having a low thermal conductivity may be made of the same material as that of the case 4, and there is no problem even if it is integrally molded, but it is desirable that the thermal conductivity be as low as possible.
  • the power module 20 of the fifth embodiment is connected to the case 4 by the heat blocking member 13 having a high thermal conductivity, heat is easily transmitted to the upper portion of the case 4, but the thermal conductivity is between the control boards. Since the small heat shielding member 12 is sandwiched, the transmission of heat is suppressed. Since most of the heat is transferred to the upper part of the case 4 by the heat blocking member 13, the substrate temperature of the control boards 6 and 7 hardly increases due to radiation between the control boards.
  • the power module 20 includes the heat blocking member 12 sandwiched between the plurality of control boards 6 and 7 with the heat blocking member 13 having high thermal conductivity.
  • the heat transfer can be cut off, the heat dissipation of the control boards 6 and 7 can be improved compared to the fourth embodiment, the temperature of the control boards 6 and 7 can be lowered, and the reliability of the power module 20 can be improved.
  • FIG. 15 is a sectional view showing a power module according to the sixth embodiment.
  • the present embodiment is an example in which a plurality of heat blocking members 12a and 12b are used in consideration of the arrangement of the plurality of control boards 6, 7, and 8. At this time, it is desirable that the plurality of heat blocking members 12a and 12b be arranged so as to suppress heat input between the control boards.
  • FIG. 15 an example in which three control boards 6, 7, 8 are arranged in parallel, and heat blocking members 12 a, 12 b are inserted between the control boards 6, 7, 8 so as to be substantially parallel to the control board Indicated.
  • symbol of a heat-insulation member uses 12 generally, and uses 12a and 12b when distinguishing and explaining.
  • the heat shielding member 12 is disposed between the control boards, so that one control board is connected to the other control board by the heat shielding member 12. Since it is thermally shut off, heat is not transmitted by radiation.
  • the heat shielding members 12a and 12b arranged in the case 4 have a low temperature, it is possible to sufficiently dissipate heat from both surfaces of the control board 7 sandwiched between the heat shielding members 12a and 12b. Further, by arranging the plurality of control boards 6, 7, and 8 in parallel, the space in the package can be used effectively.
  • the plurality of control boards 6, 7, and 8 are arranged so as to be substantially perpendicular to the mounting surface of the base plate 2.
  • the heat input from the power semiconductor element 1 is reduced as much as possible, and the wide surfaces of the control boards 6, 7, 8 are not opposed to the power semiconductor element 1, so that heat is radiated from both sides of the control boards 6, 7, 8.
  • the power module 20 of the sixth embodiment is provided with the heat blocking member 12 between the plurality of control boards 6, 7, 8, the heat transfer between the control boards can be blocked and there is no heat blocking member 12. As a result, the heat dissipation of the control boards 6, 7, and 8 can be improved, the temperature of the control boards 6, 7, and 8 can be lowered, and the reliability of the power module 20 can be improved.
  • FIG. FIG. 16 is a cross-sectional view showing a power module according to the seventh embodiment.
  • the present embodiment is an example in which the radiator 11 is attached to the outside of the upper portion of the case 4 where the heat blocking member 12 is disposed.
  • FIG. 16 the example which attached the heat radiator 11 to the upper part of the case 4 in which the heat insulation member 12 was arrange
  • the power module 20 of the seventh embodiment can further reduce the temperature rise of the control boards 6 and 7 than the fourth embodiment.

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)

Abstract

La présente invention a pour objet d'obtenir un module de puissance très fiable par réduction de la température d'une carte de commande par augmentation des propriétés d'émission de chaleur de la carte de commande et par réduction de l'entrée de chaleur provenant d'une autre carte de commande ou d'un élément semi-conducteur de puissance et transmise à la carte de commande. Le module de puissance (20) est caractérisé par un élément semi-conducteur de puissance (1) qui est monté sur une carte de base (2), et une ou plusieurs cartes de commande (6) qui commandent l'élément semi-conducteur de puissance (1), qui sont disposées dans un boîtier (4), et au moins une carte de commande (6) qui est disposée de façon à être approximativement perpendiculaire à la surface de montage de la carte de base (2) sur laquelle l'élément semi-conducteur de puissance (1) a été monté.
PCT/JP2013/062372 2012-05-18 2013-04-26 Module de puissance WO2013172183A1 (fr)

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JP2012113957 2012-05-18

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WO2016031052A1 (fr) * 2014-08-29 2016-03-03 三菱電機株式会社 Dispositif à semi-conducteur et dispositif à semi-conducteur polyphasé
WO2016063353A1 (fr) * 2014-10-21 2016-04-28 株式会社安川電機 Dispositif de commande de moteur et système de robot
JP5925328B2 (ja) * 2012-09-27 2016-05-25 富士電機株式会社 パワー半導体モジュール
JP2018101734A (ja) * 2016-12-21 2018-06-28 住友電気工業株式会社 半導体モジュール
EP3462822A1 (fr) * 2017-09-29 2019-04-03 Siemens Aktiengesellschaft Convertisseur électrique
WO2019142253A1 (fr) * 2018-01-17 2019-07-25 新電元工業株式会社 Module électronique
JPWO2022239154A1 (fr) * 2021-05-12 2022-11-17

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JP5925328B2 (ja) * 2012-09-27 2016-05-25 富士電機株式会社 パワー半導体モジュール
JPWO2016031052A1 (ja) * 2014-08-29 2017-04-27 三菱電機株式会社 半導体装置及び多相用半導体装置
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WO2016031052A1 (fr) * 2014-08-29 2016-03-03 三菱電機株式会社 Dispositif à semi-conducteur et dispositif à semi-conducteur polyphasé
WO2016063353A1 (fr) * 2014-10-21 2016-04-28 株式会社安川電機 Dispositif de commande de moteur et système de robot
JP2018101734A (ja) * 2016-12-21 2018-06-28 住友電気工業株式会社 半導体モジュール
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WO2019142253A1 (fr) * 2018-01-17 2019-07-25 新電元工業株式会社 Module électronique
JPWO2019142253A1 (ja) * 2018-01-17 2020-10-22 新電元工業株式会社 電子モジュール
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JP7018965B2 (ja) 2018-01-17 2022-02-14 新電元工業株式会社 電子モジュール
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CN111587488B (zh) * 2018-01-17 2024-03-19 新电元工业株式会社 电子模块
JPWO2022239154A1 (fr) * 2021-05-12 2022-11-17
WO2022239154A1 (fr) * 2021-05-12 2022-11-17 三菱電機株式会社 Module de puissance et dispositif de conversion de puissance

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