JP5851238B2 - 超音波トランスデューサ、その製造方法、および、それを用いた超音波探触子 - Google Patents
超音波トランスデューサ、その製造方法、および、それを用いた超音波探触子 Download PDFInfo
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- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 8
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- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 7
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- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 2
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- 239000010937 tungsten Substances 0.000 description 2
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
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- 206010028980 Neoplasm Diseases 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
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- B81C2201/00—Manufacture or treatment of microstructural devices or systems
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- B81C2201/0101—Shaping material; Structuring the bulk substrate or layers on the substrate; Film patterning
- B81C2201/0102—Surface micromachining
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- C23F4/00—Processes for removing metallic material from surfaces, not provided for in group C23F1/00 or C23F3/00
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- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
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- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
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Description
102 空洞部
103 絶縁膜
104 上部電極
105 メンブレン
106 下部電極への電気接続部
107 CMUTセルの下層に配置された配線
108 絶縁膜
201 半導体基板
202 絶縁膜
301 CMUTセルの下層に配置された配線
302 CMUTセルの下層に配置された配線
303 絶縁膜
304 下部電極への電気接続部
305 上部電極への電気接続部
306 下部電極
307 絶縁膜
308 空洞部
309 絶縁膜
310 上部電極
311 絶縁膜
312 エッチング孔
313 絶縁膜
704 開口部
705 開口部
1008 犠牲層
1201 開口部
1801 導電膜
1901 配線
2001 半導体基板。
Claims (9)
- (a)基板と、
(b)前記基板上に形成された複数の配線と、
(c)前記複数の配線を覆うように形成された第1絶縁膜と、
(d)前記第1絶縁膜に形成した、前記複数の配線の一つに達する第1開口部に、導電膜を埋め込んで形成した第1の電気接続部と、
(e)前記第1絶縁膜上に形成した、前記複数の配線の他の一つに達する第2開口部に、導電膜を埋め込んで形成した第2の電気接続部と、
(f)前記第1絶縁膜上に形成した、前記第1の電気接続部に達する下部電極と、
(g)前記下部電極を覆うように形成された第2絶縁膜と、
(h)前記第2絶縁膜上に、上面から見て、前記下部電極と重なるように形成された空洞部と、
(i)前記空洞部を覆うように形成された第3絶縁膜と、
(j)前記第3絶縁膜上に、上面から見て、前記空洞部と重なるように形成され、前記第2の電気接続部と電気的に接続された上部電極とを備えた超音波トランスデューサにおいて、
(k)前記第1の電気接続部および第2の電気接続部が、上面から見て、前記空洞部と重ならない位置に配置されていることを特徴とする超音波トランスデューサ。 - 請求項1において、
前記第1絶縁膜は、前記第1の電気接続部および前記第2の電気接続部を覆うように形成され、前記下部電極は、前記第1絶縁膜と接することを特徴とする超音波トランスデューサ。 - (a)基板と、
(b)前記基板上に形成された配線と、
(c)前記配線を覆うように形成された第1絶縁膜と、
(d)前記第1絶縁膜に形成した、前記配線に達する複数の第1開口部に、導電膜を埋め込んで形成した複数の第1の電気接続部と、
(e)前記第1絶縁膜上に形成した、前記配線に達する複数の第2開口部に、導電膜を埋め込んで形成した複数の第2の電気接続部と、
(f)前記第1絶縁膜上に形成した、前記複数の第1の電気接続部に達する複数の下部電極と、
(g)前記複数の下部電極を覆うように形成された第2絶縁膜と、
(h)前記第2絶縁膜上に、上面から見て、前記複数の下部電極とそれぞれ重なるように形成された複数の空洞部と、
(i)前記複数の空洞部を覆うように形成された第3絶縁膜と、
(j)前記第3絶縁膜上に、上面から見て、前記複数の空洞部とそれぞれ重なるように形成され、前記第2の電気接続部と電気的に接続された複数の上部電極とを備えた超音波トランスデューサにおいて、
(k)前記複数の第1の電気接続部および第2の電気接続部が、上面から見て、前記複数の空洞部とそれぞれ重ならない位置に配置されていることを特徴とする超音波トランスデューサ。 - 請求項1乃至請求項3のいずれか一つに記載の超音波トランスデューサにおいて、
前記基板が、半導体基板である超音波トランスデューサ。 - 請求項1乃至請求項3のいずれか一つに記載の超音波トランスデューサにおいて、
さらに、
(l)第3の電気接続部を備え、
(m)前記第1絶縁膜の第2の開口部を通して、前記第3の電気接続部の一端が前記上部電極と接続され、前記第2の電気接続部を介して他端が前記基板上に形成された前記配線と接続されている超音波トランスデューサ。 - 請求項1乃至請求項5のいずれか一つに記載の超音波トランスデューサを用いた超音波探触子。
- (a)基板上に複数の配線を形成する工程と、
(b)前記複数の配線を覆う第1絶縁膜を形成する工程と、
(c)前記第1絶縁膜を平坦化する工程と、
(d)前記第1絶縁膜に前記複数の配線のそれぞれに達する第1開口部を形成する工程と、
(e)前記第1開口部に導電膜を埋め込み、第1の電気接続部を形成する工程と、
(f)前記第1絶縁膜上にそれぞれの前記第1の電気接続部に達する下部電極を形成する工程と、
(g)前記下部電極を覆うように第2絶縁膜を形成する工程と、
(h)前記第2絶縁膜上に、上面から見て、前記下部電極と重なるように、かつ、前記第1の電気接続部と重ならない位置に犠牲層を形成する工程と、
(i)前記犠牲層を覆うように第3絶縁膜を形成する工程と、
(j)前記第2絶縁膜および第3絶縁膜に前記第1の電気接続部に達する第2の開口部を形成する工程と、
(k)前記第3絶縁膜上に、上面からみて、前記犠牲層と重なるように上部電極を形成するとともに、前記上部電極を構成する導電膜を前記第2の開口部に埋め込んで前記第1の電気接続部と接続する第2の電気接続部を形成する工程と、
(l)前記上部電極および前記第3絶縁膜を覆う第4絶縁膜を形成する工程と、
(m)前記第3絶縁膜および前記第4絶縁膜を貫通して前記犠牲層に達する第3開口部を形成する工程と、
(n)前記第3開口部を利用して前記犠牲層を除去することにより空洞部を形成する工程と、
(o)前記第3開口部を覆うように前記第4絶縁膜上に第5絶縁膜を形成し、前記第3絶縁膜と前記犠牲層に達する位置まで前記第3開口部に前記第5絶縁膜を埋め込むことで前記空洞部を封止する工程とを備える超音波トランスデューサの製造方法。 - 請求項7記載の超音波トランスデューサの製造方法において、
前記第1開口部に導電膜を埋め込み、第1の電気接続部を形成する工程と、前記第1の電気接続部上に下部電極を形成する工程とを、一つの工程で行うことを特徴とする超音波トランスデューサの製造方法。 - 請求項7または請求項8記載の超音波トランスデューサの製造方法において、
前記配線を形成する工程が、半導体基板上に前記配線を形成するものであることを
特徴とする超音波トランスデューサの製造方法。
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JP5876500B2 (ja) * | 2010-12-03 | 2016-03-02 | リサーチ・トライアングル・インスティチュート | 超音波振動子の形成方法、ならびに関連する装置 |
JP5921079B2 (ja) | 2011-04-06 | 2016-05-24 | キヤノン株式会社 | 電気機械変換装置及びその作製方法 |
JP5875244B2 (ja) * | 2011-04-06 | 2016-03-02 | キヤノン株式会社 | 電気機械変換装置及びその作製方法 |
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JP6555869B2 (ja) * | 2014-10-17 | 2019-08-07 | キヤノン株式会社 | 静電容量型トランスデューサ |
WO2016194591A1 (ja) * | 2015-05-29 | 2016-12-08 | 株式会社日立製作所 | 超音波トランスデューサおよび超音波検査装置 |
WO2017018967A1 (en) * | 2015-07-30 | 2017-02-02 | Intel IP Corporation | Apparatus, system and method of providing wlan measurement information from a cellular node to a location server |
JP2017112187A (ja) * | 2015-12-15 | 2017-06-22 | キヤノン株式会社 | 貫通配線を有する基板に素子を設けたデバイス及びその製造方法 |
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