JP5850931B2 - オプトエレクトロニクス部品 - Google Patents

オプトエレクトロニクス部品 Download PDF

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Publication number
JP5850931B2
JP5850931B2 JP2013520021A JP2013520021A JP5850931B2 JP 5850931 B2 JP5850931 B2 JP 5850931B2 JP 2013520021 A JP2013520021 A JP 2013520021A JP 2013520021 A JP2013520021 A JP 2013520021A JP 5850931 B2 JP5850931 B2 JP 5850931B2
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JP
Japan
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conductivity type
region
type region
carrier substrate
optoelectronic component
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Expired - Fee Related
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JP2013520021A
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English (en)
Japanese (ja)
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JP2013532900A (ja
JP2013532900A5 (https=
Inventor
ルッツ ヘッペル
ルッツ ヘッペル
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Ams Osram International GmbH
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Osram Opto Semiconductors GmbH
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Publication of JP2013532900A5 publication Critical patent/JP2013532900A5/ja
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H10H20/831—Electrodes characterised by their shape
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/857—Interconnections, e.g. lead-frames, bond wires or solder balls
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/858—Means for heat extraction or cooling
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/819—Bodies characterised by their shape, e.g. curved or truncated substrates
    • H10H20/82—Roughened surfaces, e.g. at the interface between epitaxial layers

Landscapes

  • Led Device Packages (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Photovoltaic Devices (AREA)
JP2013520021A 2010-07-20 2011-05-25 オプトエレクトロニクス部品 Expired - Fee Related JP5850931B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
DE102010027679A DE102010027679A1 (de) 2010-07-20 2010-07-20 Optoelektronisches Bauelement
DE102010027679.0 2010-07-20
PCT/EP2011/058573 WO2012010352A1 (de) 2010-07-20 2011-05-25 Optoelektronisches bauelement

Publications (3)

Publication Number Publication Date
JP2013532900A JP2013532900A (ja) 2013-08-19
JP2013532900A5 JP2013532900A5 (https=) 2014-07-10
JP5850931B2 true JP5850931B2 (ja) 2016-02-03

Family

ID=44454661

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2013520021A Expired - Fee Related JP5850931B2 (ja) 2010-07-20 2011-05-25 オプトエレクトロニクス部品

Country Status (7)

Country Link
US (1) US9000476B2 (https=)
EP (1) EP2596532B1 (https=)
JP (1) JP5850931B2 (https=)
KR (1) KR101792678B1 (https=)
CN (1) CN103003941B (https=)
DE (1) DE102010027679A1 (https=)
WO (1) WO2012010352A1 (https=)

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DE102010027679A1 (de) 2010-07-20 2012-01-26 Osram Opto Semiconductors Gmbh Optoelektronisches Bauelement
DE102010056056A1 (de) * 2010-12-23 2012-06-28 Osram Opto Semiconductors Gmbh Verfahren zur Herstellung eines elektrischen Anschlussträgers
DE102011015821B4 (de) * 2011-04-01 2023-04-20 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Optoelektronischer Halbleiterchip
US8816383B2 (en) * 2012-07-06 2014-08-26 Invensas Corporation High performance light emitting diode with vias
DE102013105631A1 (de) * 2013-05-31 2014-12-04 Osram Opto Semiconductors Gmbh Träger für einen optoelektronischen Halbleiterchip und optoelektronisches Bauteil
DE102013112881A1 (de) * 2013-11-21 2015-05-21 Osram Opto Semiconductors Gmbh Optoelektronischer Halbleiterchip
DE102014103828A1 (de) * 2014-03-20 2015-09-24 Osram Opto Semiconductors Gmbh Optoelektronisches Bauelement und Verfahren zur Herstellung von optoelektronischen Halbleiterbauelementen
DE102014116935A1 (de) 2014-11-19 2016-05-19 Osram Opto Semiconductors Gmbh Bauelement und Verfahren zur Herstellung eines Bauelements
DE102015100578A1 (de) * 2015-01-15 2016-07-21 Osram Opto Semiconductors Gmbh Bauelement und Verfahren zur Herstellung eines Bauelements
DE102015108545A1 (de) * 2015-05-29 2016-12-01 Osram Opto Semiconductors Gmbh Optoelektronisches Bauelement und Verfahren zur Herstellung eines optoelektronischen Bauelements
DE102015111487A1 (de) 2015-07-15 2017-01-19 Osram Opto Semiconductors Gmbh Verfahren zur Herstellung eines optoelektronischen Halbleiterchips und optoelektronischer Halbleiterchip
DE102015111485A1 (de) * 2015-07-15 2017-01-19 Osram Opto Semiconductors Gmbh Optoelektronisches Halbleiterbauelement
DE102017102545B4 (de) * 2017-02-09 2018-12-20 Infineon Technologies Ag Halbleitervorrichtung, Drucksensor, Mikrofon, Beschleunigungssensor und Verfahren zum Bilden einer Halbleitervorrichtung

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US5477078A (en) * 1994-02-18 1995-12-19 Analog Devices, Incorporated Integrated circuit (IC) with a two-terminal diode device to protect metal-oxide-metal capacitors from ESD damage
JPH08227941A (ja) * 1995-02-17 1996-09-03 Sanken Electric Co Ltd 複合半導体素子
WO1997021250A1 (en) 1995-12-04 1997-06-12 Lockheed-Martin Ir Imaging Systems, Inc. Infrared radiation detector having a reduced active area
JP3787202B2 (ja) * 1997-01-10 2006-06-21 ローム株式会社 半導体発光素子
US6784463B2 (en) 1997-06-03 2004-08-31 Lumileds Lighting U.S., Llc III-Phospide and III-Arsenide flip chip light-emitting devices
JP2000208822A (ja) 1999-01-11 2000-07-28 Matsushita Electronics Industry Corp 半導体発光装置
JP4296644B2 (ja) * 1999-01-29 2009-07-15 豊田合成株式会社 発光ダイオード
DE10006738C2 (de) 2000-02-15 2002-01-17 Osram Opto Semiconductors Gmbh Lichtemittierendes Bauelement mit verbesserter Lichtauskopplung und Verfahren zu seiner Herstellung
DE60141459D1 (de) 2000-03-30 2010-04-15 Nxp Bv Halbleiterbauelement und dessen herstellungsverfahren
US20020017652A1 (en) 2000-08-08 2002-02-14 Stefan Illek Semiconductor chip for optoelectronics
DE10148227B4 (de) 2001-09-28 2015-03-05 Osram Opto Semiconductors Gmbh Strahlungsemittierender Halbleiterchip, Verfahren zu dessen Herstellung und strahlungsemittierendes Bauelement
US6531328B1 (en) 2001-10-11 2003-03-11 Solidlite Corporation Packaging of light-emitting diode
JP3776824B2 (ja) 2002-04-05 2006-05-17 株式会社東芝 半導体発光素子およびその製造方法
NL1023680C2 (nl) 2003-06-17 2004-12-20 Tno Sensor met polymeren componenten.
US7291529B2 (en) 2003-11-12 2007-11-06 Cree, Inc. Methods of processing semiconductor wafer backsides having light emitting devices (LEDs) thereon
US7518158B2 (en) * 2003-12-09 2009-04-14 Cree, Inc. Semiconductor light emitting devices and submounts
TWI256676B (en) * 2004-03-26 2006-06-11 Siliconix Inc Termination for trench MIS device having implanted drain-drift region
US7208768B2 (en) 2004-04-30 2007-04-24 Sharp Laboratories Of America, Inc. Electroluminescent device
JP4250576B2 (ja) 2004-08-24 2009-04-08 株式会社東芝 半導体発光素子
JP2006086300A (ja) 2004-09-15 2006-03-30 Sanken Electric Co Ltd 保護素子を有する半導体発光装置及びその製造方法
TW200637033A (en) * 2004-11-22 2006-10-16 Matsushita Electric Industrial Co Ltd Light-emitting device, light-emitting module, display unit, lighting unit and method for manufacturing light-emitting device
JP4613709B2 (ja) 2005-06-24 2011-01-19 セイコーエプソン株式会社 半導体装置の製造方法
TWI422044B (zh) 2005-06-30 2014-01-01 克立公司 封裝發光裝置之晶片尺度方法及經晶片尺度封裝之發光裝置
US8044412B2 (en) 2006-01-20 2011-10-25 Taiwan Semiconductor Manufacturing Company, Ltd Package for a light emitting element
DE102006015788A1 (de) 2006-01-27 2007-09-13 Osram Opto Semiconductors Gmbh Optoelektronischer Halbleiterchip
JP4978014B2 (ja) * 2006-01-30 2012-07-18 サンケン電気株式会社 半導体発光装置及びその製造方法
KR100746783B1 (ko) 2006-02-28 2007-08-06 엘지전자 주식회사 발광소자 패키지 및 그 제조방법
KR100854328B1 (ko) 2006-07-07 2008-08-28 엘지전자 주식회사 발광 소자 패키지 및 그 제조방법
FR2909984B1 (fr) * 2006-12-18 2010-12-10 Degremont Silo pour le stockage de produits en vrac, notamment des boues sechees de stations d'epuration.
DE102007022947B4 (de) 2007-04-26 2022-05-05 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Optoelektronischer Halbleiterkörper und Verfahren zur Herstellung eines solchen
US8436371B2 (en) 2007-05-24 2013-05-07 Cree, Inc. Microscale optoelectronic device packages
TWI372478B (en) 2008-01-08 2012-09-11 Epistar Corp Light-emitting device
US8643034B2 (en) 2008-02-29 2014-02-04 Osram Opto Semiconductors Gmbh Monolithic, optoelectronic semiconductor body and method for the production thereof
DE102008022793B4 (de) 2008-05-08 2010-12-16 Universität Ulm Vollständig selbstjustierter oberflächenemittierender Halbleiterlaser für die Oberflächenmontage mit optimierten Eigenschaften
DE102008034560B4 (de) * 2008-07-24 2022-10-27 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Strahlungsemittierender Halbleiterchip und Verfahren zur Herstellung eines strahlungsemittierenden Halbleiterchips
KR101332794B1 (ko) 2008-08-05 2013-11-25 삼성전자주식회사 발광 장치, 이를 포함하는 발광 시스템, 상기 발광 장치 및발광 시스템의 제조 방법
CN101345235B (zh) * 2008-08-25 2011-08-17 广州南科集成电子有限公司 带静电保护功能的led芯片的制造方法
JP2010135488A (ja) * 2008-12-03 2010-06-17 Toshiba Corp 発光装置及びその製造方法
DE102009013085A1 (de) * 2009-03-13 2010-09-16 Siemens Aktiengesellschaft Metallisierte Durchführungen eines Wafers mit integrierten Dioden
DE102009032486A1 (de) * 2009-07-09 2011-01-13 Osram Opto Semiconductors Gmbh Optoelektronisches Bauelement
DE102010027679A1 (de) 2010-07-20 2012-01-26 Osram Opto Semiconductors Gmbh Optoelektronisches Bauelement

Also Published As

Publication number Publication date
US9000476B2 (en) 2015-04-07
KR101792678B1 (ko) 2017-11-02
CN103003941B (zh) 2015-09-30
US20130207154A1 (en) 2013-08-15
KR20130058728A (ko) 2013-06-04
WO2012010352A1 (de) 2012-01-26
DE102010027679A1 (de) 2012-01-26
CN103003941A (zh) 2013-03-27
JP2013532900A (ja) 2013-08-19
EP2596532B1 (de) 2016-10-05
EP2596532A1 (de) 2013-05-29

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