DE102010027679A1 - Optoelektronisches Bauelement - Google Patents

Optoelektronisches Bauelement Download PDF

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Publication number
DE102010027679A1
DE102010027679A1 DE102010027679A DE102010027679A DE102010027679A1 DE 102010027679 A1 DE102010027679 A1 DE 102010027679A1 DE 102010027679 A DE102010027679 A DE 102010027679A DE 102010027679 A DE102010027679 A DE 102010027679A DE 102010027679 A1 DE102010027679 A1 DE 102010027679A1
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DE
Germany
Prior art keywords
carrier substrate
type region
optoelectronic component
region
component according
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
DE102010027679A
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German (de)
English (en)
Inventor
Dr. Höppel Lutz
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Ams Osram International GmbH
Original Assignee
Osram Opto Semiconductors GmbH
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Osram Opto Semiconductors GmbH filed Critical Osram Opto Semiconductors GmbH
Priority to DE102010027679A priority Critical patent/DE102010027679A1/de
Priority to PCT/EP2011/058573 priority patent/WO2012010352A1/de
Priority to CN201180035714.0A priority patent/CN103003941B/zh
Priority to EP11726077.8A priority patent/EP2596532B1/de
Priority to JP2013520021A priority patent/JP5850931B2/ja
Priority to KR1020137004119A priority patent/KR101792678B1/ko
Priority to US13/810,335 priority patent/US9000476B2/en
Publication of DE102010027679A1 publication Critical patent/DE102010027679A1/de
Withdrawn legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H10H20/831—Electrodes characterised by their shape
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/857—Interconnections, e.g. lead-frames, bond wires or solder balls
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/858—Means for heat extraction or cooling
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/819—Bodies characterised by their shape, e.g. curved or truncated substrates
    • H10H20/82—Roughened surfaces, e.g. at the interface between epitaxial layers

Landscapes

  • Led Device Packages (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Photovoltaic Devices (AREA)
DE102010027679A 2010-07-20 2010-07-20 Optoelektronisches Bauelement Withdrawn DE102010027679A1 (de)

Priority Applications (7)

Application Number Priority Date Filing Date Title
DE102010027679A DE102010027679A1 (de) 2010-07-20 2010-07-20 Optoelektronisches Bauelement
PCT/EP2011/058573 WO2012010352A1 (de) 2010-07-20 2011-05-25 Optoelektronisches bauelement
CN201180035714.0A CN103003941B (zh) 2010-07-20 2011-05-25 光电子器件
EP11726077.8A EP2596532B1 (de) 2010-07-20 2011-05-25 Optoelektronisches bauelement
JP2013520021A JP5850931B2 (ja) 2010-07-20 2011-05-25 オプトエレクトロニクス部品
KR1020137004119A KR101792678B1 (ko) 2010-07-20 2011-05-25 광전자 소자
US13/810,335 US9000476B2 (en) 2010-07-20 2011-05-25 Optoelectronic component

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE102010027679A DE102010027679A1 (de) 2010-07-20 2010-07-20 Optoelektronisches Bauelement

Publications (1)

Publication Number Publication Date
DE102010027679A1 true DE102010027679A1 (de) 2012-01-26

Family

ID=44454661

Family Applications (1)

Application Number Title Priority Date Filing Date
DE102010027679A Withdrawn DE102010027679A1 (de) 2010-07-20 2010-07-20 Optoelektronisches Bauelement

Country Status (7)

Country Link
US (1) US9000476B2 (https=)
EP (1) EP2596532B1 (https=)
JP (1) JP5850931B2 (https=)
KR (1) KR101792678B1 (https=)
CN (1) CN103003941B (https=)
DE (1) DE102010027679A1 (https=)
WO (1) WO2012010352A1 (https=)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2012010352A1 (de) 2010-07-20 2012-01-26 Osram Opto Semiconductors Gmbh Optoelektronisches bauelement
WO2014191280A1 (de) * 2013-05-31 2014-12-04 Osram Opto Semiconductors Gmbh Träger für einen optoelektronischen halbleiterchip und optoelektronisches bauteil
WO2016078837A1 (de) * 2014-11-19 2016-05-26 Osram Opto Semiconductors Gmbh Bauelement und verfahren zur herstellung eines bauelements
WO2017009085A1 (de) * 2015-07-15 2017-01-19 Osram Opto Semiconductors Gmbh Optoelektronisches halbleiterbauelement
US20180190711A1 (en) 2015-07-15 2018-07-05 Osram Opto Semiconductors Gmbh Method for producing an optoelectronic semiconductor chip and optoelectronic semiconductor chip

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102010056056A1 (de) * 2010-12-23 2012-06-28 Osram Opto Semiconductors Gmbh Verfahren zur Herstellung eines elektrischen Anschlussträgers
DE102011015821B4 (de) * 2011-04-01 2023-04-20 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Optoelektronischer Halbleiterchip
US8816383B2 (en) * 2012-07-06 2014-08-26 Invensas Corporation High performance light emitting diode with vias
DE102013112881A1 (de) * 2013-11-21 2015-05-21 Osram Opto Semiconductors Gmbh Optoelektronischer Halbleiterchip
DE102014103828A1 (de) * 2014-03-20 2015-09-24 Osram Opto Semiconductors Gmbh Optoelektronisches Bauelement und Verfahren zur Herstellung von optoelektronischen Halbleiterbauelementen
DE102015100578A1 (de) * 2015-01-15 2016-07-21 Osram Opto Semiconductors Gmbh Bauelement und Verfahren zur Herstellung eines Bauelements
DE102015108545A1 (de) * 2015-05-29 2016-12-01 Osram Opto Semiconductors Gmbh Optoelektronisches Bauelement und Verfahren zur Herstellung eines optoelektronischen Bauelements
DE102017102545B4 (de) * 2017-02-09 2018-12-20 Infineon Technologies Ag Halbleitervorrichtung, Drucksensor, Mikrofon, Beschleunigungssensor und Verfahren zum Bilden einer Halbleitervorrichtung

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US6445011B1 (en) * 1999-01-29 2002-09-03 Toyoda Gosei Co., Ltd. Light-emitting diode
DE102008034560A1 (de) * 2008-07-24 2010-02-04 Osram Opto Semiconductors Gmbh Strahlungsemittierender Halbleiterchip und Verfahren zur Herstellung eines strahlungsemittierenden Halbleiterchips
DE102009013085A1 (de) * 2009-03-13 2010-09-16 Siemens Aktiengesellschaft Metallisierte Durchführungen eines Wafers mit integrierten Dioden

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DE10006738C2 (de) 2000-02-15 2002-01-17 Osram Opto Semiconductors Gmbh Lichtemittierendes Bauelement mit verbesserter Lichtauskopplung und Verfahren zu seiner Herstellung
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US20020017652A1 (en) 2000-08-08 2002-02-14 Stefan Illek Semiconductor chip for optoelectronics
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US8643034B2 (en) 2008-02-29 2014-02-04 Osram Opto Semiconductors Gmbh Monolithic, optoelectronic semiconductor body and method for the production thereof
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US6445011B1 (en) * 1999-01-29 2002-09-03 Toyoda Gosei Co., Ltd. Light-emitting diode
DE102008034560A1 (de) * 2008-07-24 2010-02-04 Osram Opto Semiconductors Gmbh Strahlungsemittierender Halbleiterchip und Verfahren zur Herstellung eines strahlungsemittierenden Halbleiterchips
DE102009013085A1 (de) * 2009-03-13 2010-09-16 Siemens Aktiengesellschaft Metallisierte Durchführungen eines Wafers mit integrierten Dioden

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2012010352A1 (de) 2010-07-20 2012-01-26 Osram Opto Semiconductors Gmbh Optoelektronisches bauelement
WO2014191280A1 (de) * 2013-05-31 2014-12-04 Osram Opto Semiconductors Gmbh Träger für einen optoelektronischen halbleiterchip und optoelektronisches bauteil
WO2016078837A1 (de) * 2014-11-19 2016-05-26 Osram Opto Semiconductors Gmbh Bauelement und verfahren zur herstellung eines bauelements
US9985151B2 (en) 2014-11-19 2018-05-29 Osram Opto Semiconductors Gmbh Component and method for producing a component
WO2017009085A1 (de) * 2015-07-15 2017-01-19 Osram Opto Semiconductors Gmbh Optoelektronisches halbleiterbauelement
US20180190711A1 (en) 2015-07-15 2018-07-05 Osram Opto Semiconductors Gmbh Method for producing an optoelectronic semiconductor chip and optoelectronic semiconductor chip
US10217792B2 (en) 2015-07-15 2019-02-26 Osram Opto Semiconductors Gmbh Method for producing an optoelectronic semiconductor chip and optoelectronic semiconductor chip
US10559556B2 (en) 2015-07-15 2020-02-11 Osram Opto Semiconductors Gmbh Optoelectronic semiconductor component

Also Published As

Publication number Publication date
US9000476B2 (en) 2015-04-07
KR101792678B1 (ko) 2017-11-02
CN103003941B (zh) 2015-09-30
US20130207154A1 (en) 2013-08-15
KR20130058728A (ko) 2013-06-04
WO2012010352A1 (de) 2012-01-26
CN103003941A (zh) 2013-03-27
JP5850931B2 (ja) 2016-02-03
JP2013532900A (ja) 2013-08-19
EP2596532B1 (de) 2016-10-05
EP2596532A1 (de) 2013-05-29

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R119 Application deemed withdrawn, or ip right lapsed, due to non-payment of renewal fee
R119 Application deemed withdrawn, or ip right lapsed, due to non-payment of renewal fee

Effective date: 20150203