JP5843527B2 - 光電変換装置 - Google Patents

光電変換装置 Download PDF

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Publication number
JP5843527B2
JP5843527B2 JP2011193057A JP2011193057A JP5843527B2 JP 5843527 B2 JP5843527 B2 JP 5843527B2 JP 2011193057 A JP2011193057 A JP 2011193057A JP 2011193057 A JP2011193057 A JP 2011193057A JP 5843527 B2 JP5843527 B2 JP 5843527B2
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JP
Japan
Prior art keywords
semiconductor layer
conductivity type
potential
type semiconductor
photoelectric conversion
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP2011193057A
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English (en)
Japanese (ja)
Other versions
JP2013055245A (ja
JP2013055245A5 (enExample
Inventor
秀央 小林
秀央 小林
光地　哲伸
哲伸 光地
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Canon Inc
Original Assignee
Canon Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Canon Inc filed Critical Canon Inc
Priority to JP2011193057A priority Critical patent/JP5843527B2/ja
Priority to US13/595,520 priority patent/US9608150B2/en
Publication of JP2013055245A publication Critical patent/JP2013055245A/ja
Publication of JP2013055245A5 publication Critical patent/JP2013055245A5/ja
Application granted granted Critical
Publication of JP5843527B2 publication Critical patent/JP5843527B2/ja
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/14—Shape of semiconductor bodies; Shapes, relative sizes or dispositions of semiconductor regions within semiconductor bodies
    • H10F77/148—Shapes of potential barriers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
    • H10F30/21—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation
    • H10F30/22—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes
    • H10F30/221—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes the potential barrier being a PN homojunction
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/18—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors
    • H10F39/182—Colour image sensors
    • H10F39/1825—Multicolour image sensors having stacked structure, e.g. NPN, NPNPN or multiple quantum well [MQW] structures
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy

Landscapes

  • Light Receiving Elements (AREA)
  • Solid State Image Pick-Up Elements (AREA)
JP2011193057A 2011-09-05 2011-09-05 光電変換装置 Expired - Fee Related JP5843527B2 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2011193057A JP5843527B2 (ja) 2011-09-05 2011-09-05 光電変換装置
US13/595,520 US9608150B2 (en) 2011-09-05 2012-08-27 Photoelectric converting apparatus

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2011193057A JP5843527B2 (ja) 2011-09-05 2011-09-05 光電変換装置

Publications (3)

Publication Number Publication Date
JP2013055245A JP2013055245A (ja) 2013-03-21
JP2013055245A5 JP2013055245A5 (enExample) 2014-08-14
JP5843527B2 true JP5843527B2 (ja) 2016-01-13

Family

ID=47752449

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2011193057A Expired - Fee Related JP5843527B2 (ja) 2011-09-05 2011-09-05 光電変換装置

Country Status (2)

Country Link
US (1) US9608150B2 (enExample)
JP (1) JP5843527B2 (enExample)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9021198B1 (en) 2011-01-20 2015-04-28 Commvault Systems, Inc. System and method for sharing SAN storage
JP6107267B2 (ja) 2013-03-18 2017-04-05 株式会社日本自動車部品総合研究所 車両システム、車載装置、及び携帯機
US9859318B2 (en) * 2014-10-22 2018-01-02 Omnivision Technologies, Inc. Color and infrared image sensor with depletion adjustment layer
JP6933543B2 (ja) * 2017-09-29 2021-09-08 エイブリック株式会社 半導体光検出装置および特定波長の光検出方法
CN114520268B (zh) * 2020-11-19 2024-01-30 无锡华润微电子有限公司 光电二极管单元及光电二极管阵列

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61187282A (ja) * 1985-02-14 1986-08-20 Mitsubishi Electric Corp 光検出素子
EP0510667B1 (en) 1991-04-26 1996-09-11 Canon Kabushiki Kaisha Semiconductor device having an improved insulated gate transistor
JPH0738136A (ja) * 1993-07-23 1995-02-07 Sony Corp 受光素子
JPH08125935A (ja) 1994-10-28 1996-05-17 Canon Inc 半導体装置、及びそれを用いた半導体回路、相関演算装置、ａ／ｄ変換器、ｄ／ａ変換器、信号処理システム
JPH08125502A (ja) 1994-10-28 1996-05-17 Canon Inc 半導体装置とこれを用いた半導体回路、相関演算装置、ａ／ｄ変換器、ｄ／ａ変換器、及び信号処理システム
US5835045A (en) 1994-10-28 1998-11-10 Canon Kabushiki Kaisha Semiconductor device, and operating device, signal converter, and signal processing system using the semiconductor device.
JPH0964743A (ja) 1995-08-23 1997-03-07 Canon Inc 半導体装置と相関演算装置、ａ／ｄ変換器、ｄ／ａ変換器、及び信号処理システム
US6727521B2 (en) 2000-09-25 2004-04-27 Foveon, Inc. Vertical color filter detector group and array
JP2001326378A (ja) 2000-05-17 2001-11-22 Canon Inc 受光センサ、それを備えた光電変換装置及び撮像装置
US20040178463A1 (en) * 2002-03-20 2004-09-16 Foveon, Inc. Vertical color filter sensor group with carrier-collection elements of different size and method for fabricating such a sensor group
JP4154165B2 (ja) * 2002-04-05 2008-09-24 キヤノン株式会社 光電変換素子及びそれを用いた固体撮像装置、カメラ及び画像読み取り装置
JP2005277063A (ja) * 2004-03-24 2005-10-06 Matsushita Electric Ind Co Ltd 受光素子
US7470946B2 (en) * 2006-03-17 2008-12-30 Sharp Laboratories Of America, Inc. Triple-junction filterless CMOS color imager cell
JP2007082244A (ja) * 2006-10-17 2007-03-29 Canon Inc 固体撮像装置及び撮影システム

Also Published As

Publication number Publication date
JP2013055245A (ja) 2013-03-21
US20130056807A1 (en) 2013-03-07
US9608150B2 (en) 2017-03-28

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