JP5842324B2 - Ｉｉｉ族窒化物半導体素子、ｉｉｉ族窒化物半導体素子を作製する方法、及びエピタキシャル基板 - Google Patents

Ｉｉｉ族窒化物半導体素子、ｉｉｉ族窒化物半導体素子を作製する方法、及びエピタキシャル基板 Download PDF

Info

Publication number
JP5842324B2
JP5842324B2 JP2010248932A JP2010248932A JP5842324B2 JP 5842324 B2 JP5842324 B2 JP 5842324B2 JP 2010248932 A JP2010248932 A JP 2010248932A JP 2010248932 A JP2010248932 A JP 2010248932A JP 5842324 B2 JP5842324 B2 JP 5842324B2
Authority
JP
Japan
Prior art keywords
group iii
gallium nitride
type
nitride semiconductor
layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP2010248932A
Other languages
English (en)
Japanese (ja)
Other versions
JP2012104515A5 (enExample
JP2012104515A (ja
Inventor
陽平 塩谷
陽平 塩谷
孝史 京野
孝史 京野
隆道 住友
隆道 住友
祐介 善積
祐介 善積
幸司 西塚
幸司 西塚
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sumitomo Electric Industries Ltd
Original Assignee
Sumitomo Electric Industries Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sumitomo Electric Industries Ltd filed Critical Sumitomo Electric Industries Ltd
Priority to JP2010248932A priority Critical patent/JP5842324B2/ja
Priority to CN2011800534287A priority patent/CN103190042A/zh
Priority to PCT/JP2011/074973 priority patent/WO2012060299A1/ja
Priority to EP11837949.4A priority patent/EP2637267A1/en
Priority to TW100140401A priority patent/TW201234415A/zh
Priority to US13/289,813 priority patent/US8809868B2/en
Publication of JP2012104515A publication Critical patent/JP2012104515A/ja
Publication of JP2012104515A5 publication Critical patent/JP2012104515A5/ja
Application granted granted Critical
Publication of JP5842324B2 publication Critical patent/JP5842324B2/ja
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H01S5/343—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
    • H01S5/34333—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser with a well layer based on Ga(In)N or Ga(In)P, e.g. blue laser
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/02387—Group 13/15 materials
    • H01L21/02389—Nitrides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02436—Intermediate layers between substrates and deposited layers
    • H01L21/02439—Materials
    • H01L21/02455—Group 13/15 materials
    • H01L21/02458—Nitrides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02436—Intermediate layers between substrates and deposited layers
    • H01L21/02494—Structure
    • H01L21/02496—Layer structure
    • H01L21/02505—Layer structure consisting of more than two layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02538—Group 13/15 materials
    • H01L21/0254—Nitrides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/0257—Doping during depositing
    • H01L21/02573—Conductivity type
    • H01L21/02579—P-type
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/028—Coatings ; Treatment of the laser facets, e.g. etching, passivation layers or reflecting layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/822—Materials of the light-emitting regions
    • H10H20/824—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP
    • H10H20/825—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP containing nitrogen, e.g. GaN
    • H10H20/8252—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP containing nitrogen, e.g. GaN characterised by the dopants
    • H10P14/24—
    • H10P14/2908—
    • H10P14/3216—
    • H10P14/3251—
    • H10P14/3416—
    • H10P14/3444—
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S2302/00—Amplification / lasing wavelength
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S2304/00—Special growth methods for semiconductor lasers
    • H01S2304/04—MOCVD or MOVPE
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/2004—Confining in the direction perpendicular to the layer structure
    • H01S5/2009—Confining in the direction perpendicular to the layer structure by using electron barrier layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/2004—Confining in the direction perpendicular to the layer structure
    • H01S5/2018—Optical confinement, e.g. absorbing-, reflecting- or waveguide-layers
    • H01S5/2031—Optical confinement, e.g. absorbing-, reflecting- or waveguide-layers characterized by special waveguide layers, e.g. asymmetric waveguide layers or defined bandgap discontinuities
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/305—Structure or shape of the active region; Materials used for the active region characterised by the doping materials used in the laser structure
    • H01S5/3054—Structure or shape of the active region; Materials used for the active region characterised by the doping materials used in the laser structure p-doping
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/305—Structure or shape of the active region; Materials used for the active region characterised by the doping materials used in the laser structure
    • H01S5/3054—Structure or shape of the active region; Materials used for the active region characterised by the doping materials used in the laser structure p-doping
    • H01S5/3063—Structure or shape of the active region; Materials used for the active region characterised by the doping materials used in the laser structure p-doping using Mg
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
    • H01S5/3202—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures grown on specifically orientated substrates, or using orientation dependent growth
    • H01S5/320275—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures grown on specifically orientated substrates, or using orientation dependent growth semi-polar orientation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
    • H01S5/3211—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures characterised by special cladding layers, e.g. details on band-discontinuities
    • H01S5/3213—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures characterised by special cladding layers, e.g. details on band-discontinuities asymmetric clading layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/811—Bodies having quantum effect structures or superlattices, e.g. tunnel junctions
    • H10H20/812—Bodies having quantum effect structures or superlattices, e.g. tunnel junctions within the light-emitting regions, e.g. having quantum confinement structures

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • Electromagnetism (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Biophysics (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Materials Engineering (AREA)
  • Led Devices (AREA)
  • Semiconductor Lasers (AREA)
JP2010248932A 2010-11-05 2010-11-05 Ｉｉｉ族窒化物半導体素子、ｉｉｉ族窒化物半導体素子を作製する方法、及びエピタキシャル基板 Expired - Fee Related JP5842324B2 (ja)

Priority Applications (6)

Application Number Priority Date Filing Date Title
JP2010248932A JP5842324B2 (ja) 2010-11-05 2010-11-05 Ｉｉｉ族窒化物半導体素子、ｉｉｉ族窒化物半導体素子を作製する方法、及びエピタキシャル基板
PCT/JP2011/074973 WO2012060299A1 (ja) 2010-11-05 2011-10-28 Iii族窒化物半導体素子、iii族窒化物半導体素子を作製する方法、及びエピタキシャル基板
EP11837949.4A EP2637267A1 (en) 2010-11-05 2011-10-28 Group iii nitride semiconductor device, method of manufacturing group iii nitride semiconductor devices, and epitaxial substrate
CN2011800534287A CN103190042A (zh) 2010-11-05 2011-10-28 Iii族氮化物半导体元件、制造iii族氮化物半导体元件的方法及外延基板
TW100140401A TW201234415A (en) 2010-11-05 2011-11-04 Group-iii nitride semiconductor device, method for fabricating group-iii nitride semiconductor device, and epitaxial substrate
US13/289,813 US8809868B2 (en) 2010-11-05 2011-11-04 Group-III nitride semiconductor device, method for fabricating Group-III nitride semiconductor device, and epitaxial substrate

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2010248932A JP5842324B2 (ja) 2010-11-05 2010-11-05 Ｉｉｉ族窒化物半導体素子、ｉｉｉ族窒化物半導体素子を作製する方法、及びエピタキシャル基板

Publications (3)

Publication Number Publication Date
JP2012104515A JP2012104515A (ja) 2012-05-31
JP2012104515A5 JP2012104515A5 (enExample) 2013-12-12
JP5842324B2 true JP5842324B2 (ja) 2016-01-13

Family

ID=46018759

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2010248932A Expired - Fee Related JP5842324B2 (ja) 2010-11-05 2010-11-05 Ｉｉｉ族窒化物半導体素子、ｉｉｉ族窒化物半導体素子を作製する方法、及びエピタキシャル基板

Country Status (6)

Country Link
US (1) US8809868B2 (enExample)
EP (1) EP2637267A1 (enExample)
JP (1) JP5842324B2 (enExample)
CN (1) CN103190042A (enExample)
TW (1) TW201234415A (enExample)
WO (1) WO2012060299A1 (enExample)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2821900B2 (ja) 1989-04-05 1998-11-05 日本鉄道建設公団 音波制御装置を配置した輸送用高架構造物
JP2820770B2 (ja) 1990-04-19 1998-11-05 株式会社ブリヂストン 干渉型防音装置

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5387302B2 (ja) * 2009-09-30 2014-01-15 住友電気工業株式会社 Ｉｉｉ族窒化物半導体レーザ素子、及びｉｉｉ族窒化物半導体レーザ素子を作製する方法
KR101659738B1 (ko) * 2010-07-08 2016-09-26 엘지이노텍 주식회사 발광 소자 제조방법
JP5361925B2 (ja) * 2011-03-08 2013-12-04 株式会社東芝 半導体発光素子およびその製造方法
JP6176141B2 (ja) * 2014-02-19 2017-08-09 豊田合成株式会社 Ｉｉｉ 族窒化物半導体発光素子の製造方法
TWI577046B (zh) * 2014-12-23 2017-04-01 錼創科技股份有限公司 半導體發光元件及其製作方法
WO2019039189A1 (ja) * 2017-08-24 2019-02-28 日本碍子株式会社 １３族元素窒化物層、自立基板および機能素子
US10665750B2 (en) 2017-11-22 2020-05-26 Epistar Corporation Semiconductor device
CN110838514B (zh) * 2018-08-17 2022-07-22 苏州能讯高能半导体有限公司 一种半导体器件的外延结构及其制备方法、半导体器件
JP6744521B1 (ja) * 2018-12-11 2020-08-19 パナソニックセミコンダクターソリューションズ株式会社 窒化物系半導体発光素子及びその製造方法、並びに、窒化物系半導体結晶の製造方法
JP7422496B2 (ja) * 2019-06-21 2024-01-26 古河機械金属株式会社 構造体、光デバイス、光デバイスの製造方法、構造体の製造方法
US11527701B2 (en) * 2019-10-28 2022-12-13 Taiwan Semiconductor Manufacturing Company, Ltd. Piezoelectric device and method of forming the same
JP7269190B2 (ja) * 2020-02-27 2023-05-08 株式会社東芝 窒化物結晶、光学装置、半導体装置、窒化物結晶の製造方法
US12482653B2 (en) * 2020-09-30 2025-11-25 Dynax Semiconductor, Inc. Epitaxial structure of semiconductor device and method of manufacturing the same

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2751987B2 (ja) 1992-11-20 1998-05-18 日亜化学工業株式会社 窒化インジウムガリウム半導体の成長方法
JP2005191530A (ja) * 2003-12-03 2005-07-14 Sumitomo Electric Ind Ltd 発光装置
JP4121985B2 (ja) * 2004-07-16 2008-07-23 昭和電工株式会社 ＧａＮ系化合物半導体の製造方法
WO2008117750A1 (ja) * 2007-03-23 2008-10-02 Tokuyama Corporation Ｐ型iii族窒化物半導体およびiii族窒化物半導体素子
JPWO2008153130A1 (ja) * 2007-06-15 2010-08-26 ローム株式会社 窒化物半導体発光素子及び窒化物半導体の製造方法
JP5077303B2 (ja) * 2008-10-07 2012-11-21 住友電気工業株式会社 窒化ガリウム系半導体発光素子、窒化ガリウム系半導体発光素子を作製する方法、窒化ガリウム系発光ダイオード、エピタキシャルウエハ、及び窒化ガリウム系発光ダイオードを作製する方法
JP5316276B2 (ja) * 2009-01-23 2013-10-16 住友電気工業株式会社 窒化物半導体発光素子、エピタキシャル基板、及び窒化物半導体発光素子を作製する方法
JP5529420B2 (ja) * 2009-02-09 2014-06-25 住友電気工業株式会社 エピタキシャルウエハ、窒化ガリウム系半導体デバイスを作製する方法、窒化ガリウム系半導体デバイス、及び酸化ガリウムウエハ
JP5316359B2 (ja) * 2009-02-20 2013-10-16 住友電気工業株式会社 窒化ガリウム系半導体電子デバイスを作製する方法、エピタキシャル基板、及び窒化ガリウム系半導体電子デバイス
JP2010212651A (ja) * 2009-09-08 2010-09-24 Sumitomo Electric Ind Ltd Ｉｉｉ族窒化物半導体素子、エピタキシャル基板、及びｉｉｉ族窒化物半導体素子を作製する方法

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2821900B2 (ja) 1989-04-05 1998-11-05 日本鉄道建設公団 音波制御装置を配置した輸送用高架構造物
JP2820770B2 (ja) 1990-04-19 1998-11-05 株式会社ブリヂストン 干渉型防音装置

Also Published As

Publication number Publication date
TW201234415A (en) 2012-08-16
US8809868B2 (en) 2014-08-19
CN103190042A (zh) 2013-07-03
US20120112203A1 (en) 2012-05-10
JP2012104515A (ja) 2012-05-31
WO2012060299A1 (ja) 2012-05-10
EP2637267A1 (en) 2013-09-11

Similar Documents

Publication Publication Date Title
JP5842324B2 (ja) Ｉｉｉ族窒化物半導体素子、ｉｉｉ族窒化物半導体素子を作製する方法、及びエピタキシャル基板
CN101919076B (zh) Ⅲ族氮化物半导体器件、外延衬底及ⅲ族氮化物半导体器件的制作方法
JP5003527B2 (ja) Ｉｉｉ族窒化物発光素子、及びｉｉｉ族窒化物系半導体発光素子を作製する方法
JP5381439B2 (ja) Ｉｉｉ族窒化物半導体光素子
US20100008393A1 (en) Group iii nitride semiconductor light-emitting device and epitaxial wafer
JP2013033930A (ja) Ｉｉｉ族窒化物半導体素子、及び、ｉｉｉ族窒化物半導体素子の製造方法
US20110042646A1 (en) Nitride semiconductor wafer, nitride semiconductor chip, method of manufacture thereof, and semiconductor device
JP5699983B2 (ja) 窒化ガリウム系半導体を作製する方法、ｉｉｉ族窒化物半導体デバイスを作製する方法、及びｉｉｉ族窒化物半導体デバイス
JP2010205835A (ja) 窒化ガリウム系半導体光素子、窒化ガリウム系半導体光素子を製造する方法、及びエピタキシャルウエハ
JP5326787B2 (ja) Ｉｉｉ族窒化物半導体レーザダイオード、及びｉｉｉ族窒化物半導体レーザダイオードを作製する方法
JP3446660B2 (ja) 窒化物半導体発光素子
JP5651077B2 (ja) 窒化ガリウム系半導体レーザ素子、及び、窒化ガリウム系半導体レーザ素子の製造方法
JP5310382B2 (ja) Ｉｉｉ族窒化物半導体光素子、及びｉｉｉ族窒化物半導体光素子を作製する方法
WO2013065381A1 (ja) 窒化物半導体発光素子、及び、窒化物半導体発光素子の作製方法
JP2010212651A (ja) Ｉｉｉ族窒化物半導体素子、エピタキシャル基板、及びｉｉｉ族窒化物半導体素子を作製する方法
JP4628651B2 (ja) 窒化物半導体発光素子の製造方法
JP5012629B2 (ja) 窒化物半導体素子の製造方法
JP2012109624A (ja) Ｉｉｉ族窒化物発光素子、及びｉｉｉ族窒化物系半導体発光素子を作製する方法

Legal Events

Date Code Title Description
A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20131025

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20131029

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20140916

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20141117

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20150331

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20150522

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20151020

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20151102

R150 Certificate of patent or registration of utility model

Ref document number: 5842324

Country of ref document: JP

Free format text: JAPANESE INTERMEDIATE CODE: R150

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

LAPS Cancellation because of no payment of annual fees