JP5823490B2 - 脆性材料のレーザシンギュレーションのための改良された方法及び装置 - Google Patents

脆性材料のレーザシンギュレーションのための改良された方法及び装置 Download PDF

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JP5823490B2
JP5823490B2 JP2013502858A JP2013502858A JP5823490B2 JP 5823490 B2 JP5823490 B2 JP 5823490B2 JP 2013502858 A JP2013502858 A JP 2013502858A JP 2013502858 A JP2013502858 A JP 2013502858A JP 5823490 B2 JP5823490 B2 JP 5823490B2
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laser
parameter
laser parameter
parameters
microns
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JP2013524521A (ja
JP2013524521A5 (enExample
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康 大迫
康 大迫
フィン，ダラ
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エレクトロ サイエンティフィック インダストリーズ インコーポレーテッド
エレクトロ サイエンティフィック インダストリーズ インコーポレーテッド
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/0006—Working by laser beam, e.g. welding, cutting or boring taking account of the properties of the material involved
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
    • B23K26/06—Shaping the laser beam, e.g. by masks or multi-focusing
    • B23K26/062—Shaping the laser beam, e.g. by masks or multi-focusing by direct control of the laser beam
    • B23K26/0626—Energy control of the laser beam
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/36—Removing material
    • B23K26/38—Removing material by boring or cutting
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/36—Removing material
    • B23K26/40—Removing material taking account of the properties of the material involved
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/268—Bombardment with radiation with high-energy radiation using electromagnetic radiation, e.g. laser radiation
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K2103/00—Materials to be soldered, welded or cut
    • B23K2103/50—Inorganic material, e.g. metals, not provided for in B23K2103/02 – B23K2103/26
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K2103/00—Materials to be soldered, welded or cut
    • B23K2103/50—Inorganic material, e.g. metals, not provided for in B23K2103/02 – B23K2103/26
    • B23K2103/56—Inorganic material, e.g. metals, not provided for in B23K2103/02 – B23K2103/26 semiconducting

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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Optics & Photonics (AREA)
  • Plasma & Fusion (AREA)
  • Mechanical Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Electromagnetism (AREA)
  • Laser Beam Processing (AREA)
  • Dicing (AREA)
  • Processing Of Stones Or Stones Resemblance Materials (AREA)
JP2013502858A 2010-04-02 2011-03-31 脆性材料のレーザシンギュレーションのための改良された方法及び装置 Active JP5823490B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US12/753,367 US8383984B2 (en) 2010-04-02 2010-04-02 Method and apparatus for laser singulation of brittle materials
US12/753,367 2010-04-02
PCT/US2011/030768 WO2011123673A2 (en) 2010-04-02 2011-03-31 Improved method and apparatus for laser singulation of brittle materials

Publications (3)

Publication Number Publication Date
JP2013524521A JP2013524521A (ja) 2013-06-17
JP2013524521A5 JP2013524521A5 (enExample) 2014-05-08
JP5823490B2 true JP5823490B2 (ja) 2015-11-25

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US (2) US8383984B2 (enExample)
EP (1) EP2553717B1 (enExample)
JP (1) JP5823490B2 (enExample)
KR (1) KR101754186B1 (enExample)
CN (1) CN102844844B (enExample)
TW (1) TWI532559B (enExample)
WO (1) WO2011123673A2 (enExample)

Families Citing this family (36)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9346130B2 (en) 2008-12-17 2016-05-24 Electro Scientific Industries, Inc. Method for laser processing glass with a chamfered edge
US9669613B2 (en) * 2010-12-07 2017-06-06 Ipg Photonics Corporation Laser lift off systems and methods that overlap irradiation zones to provide multiple pulses of laser irradiation per location at an interface between layers to be separated
US20110287607A1 (en) * 2010-04-02 2011-11-24 Electro Scientific Industries, Inc. Method and apparatus for improved wafer singulation
ES2398787B1 (es) * 2010-12-16 2014-02-18 BSH Electrodomésticos España S.A. Procedimiento para fabricar una placa de campo de cocción para un campo de cocción
US8976340B2 (en) 2011-04-15 2015-03-10 Advanced Scientific Concepts, Inc. Ladar sensor for landing, docking and approach
US9062505B2 (en) 2011-06-22 2015-06-23 Us Synthetic Corporation Method for laser cutting polycrystalline diamond structures
US8950519B2 (en) 2011-05-26 2015-02-10 Us Synthetic Corporation Polycrystalline diamond compacts with partitioned substrate, polycrystalline diamond table, or both
US9297411B2 (en) 2011-05-26 2016-03-29 Us Synthetic Corporation Bearing assemblies, apparatuses, and motor assemblies using the same
US8863864B1 (en) 2011-05-26 2014-10-21 Us Synthetic Corporation Liquid-metal-embrittlement resistant superabrasive compact, and related drill bits and methods
DE102011054891B4 (de) * 2011-10-28 2017-10-19 Osram Opto Semiconductors Gmbh Verfahren zum Durchtrennen eines Halbleiterbauelementverbunds
US10357850B2 (en) 2012-09-24 2019-07-23 Electro Scientific Industries, Inc. Method and apparatus for machining a workpiece
CN104136967B (zh) * 2012-02-28 2018-02-16 伊雷克托科学工业股份有限公司 用于分离增强玻璃的方法及装置及由该增强玻璃生产的物品
US9828278B2 (en) 2012-02-28 2017-11-28 Electro Scientific Industries, Inc. Method and apparatus for separation of strengthened glass and articles produced thereby
CN104114506B (zh) 2012-02-29 2017-05-24 伊雷克托科学工业股份有限公司 加工强化玻璃的方法和装置及藉此制造的物品
TWI483802B (zh) * 2012-12-14 2015-05-11 Ind Tech Res Inst 雷射加工裝置及其方法
US9919380B2 (en) 2013-02-23 2018-03-20 Coherent, Inc. Shaping of brittle materials with controlled surface and bulk properties
DE102013005136A1 (de) * 2013-03-26 2014-10-02 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Verfahren zurn Abtragen von sprödhartem Material mittels Laserstrahlung
JP6162018B2 (ja) * 2013-10-15 2017-07-12 株式会社ディスコ ウエーハの加工方法
US9773941B2 (en) * 2013-10-29 2017-09-26 Koninklijke Philips N.V. Separating a wafer of light emitting devices
US9653638B2 (en) 2013-12-20 2017-05-16 Sunpower Corporation Contacts for solar cells formed by directing a laser beam with a particular shape on a metal foil over a dielectric region
US9649727B2 (en) 2014-04-29 2017-05-16 Ipg Photonics Corporation High speed laser cutting of amorphous metals
US20160184926A1 (en) * 2014-12-30 2016-06-30 Suss Microtec Photonic Systems Inc. Laser ablation system including variable energy beam to minimize etch-stop material damage
JP6649705B2 (ja) * 2015-06-22 2020-02-19 株式会社ディスコ レーザー加工方法
KR102698971B1 (ko) 2015-08-26 2024-08-27 일렉트로 싸이언티픽 인더스트리이즈 인코포레이티드 기체 흐름에 대한 레이저 스캔 시퀀싱 및 방향
KR102636469B1 (ko) * 2015-12-18 2024-02-15 킴벌리-클라크 월드와이드, 인크. 웹 구조의 레이저 절단 방법
TWI724282B (zh) * 2018-03-02 2021-04-11 寬輔科技股份有限公司 測試晶粒的雷射切割方法
JP7072993B2 (ja) * 2018-07-31 2022-05-23 株式会社ディスコ チップ製造方法
TWI678342B (zh) 2018-11-09 2019-12-01 財團法人工業技術研究院 形成導角的切割方法
KR102158832B1 (ko) * 2018-11-20 2020-09-22 한화정밀기계 주식회사 웨이퍼 절단 방법 및 절단 장치
EP4035823B1 (de) * 2019-02-25 2024-02-21 WSoptics technologies GmbH Prozess zur strahlbearbeitung eines platten- oder rohrförmigen werkstücks
CN114424323B (zh) 2020-02-21 2022-08-09 新唐科技日本株式会社 单片化方法
US11854888B2 (en) * 2020-06-22 2023-12-26 Applied Materials, Inc. Laser scribing trench opening control in wafer dicing using hybrid laser scribing and plasma etch approach
US20220305588A1 (en) * 2021-03-24 2022-09-29 Applied Materials, Inc. Methods to dice optical devices with optimization of laser pulse spatial distribution
CN113799277B (zh) * 2021-08-10 2024-04-19 威科赛乐微电子股份有限公司 一种晶体多线切割方法
US20240120284A1 (en) * 2022-10-06 2024-04-11 Thinsic Inc Carbon Assisted Semiconductor Dicing And Method
DE102023002414A1 (de) * 2023-06-14 2024-12-19 Azur Space Solar Power Gmbh Verfahren zur Herstellung eines Grabens bei einer III-V Mehrfachsolarzelle

Family Cites Families (34)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2720669B2 (ja) 1991-11-11 1998-03-04 株式会社大林組 レーザービームによる厚板の溶断方法
DE4316012C2 (de) 1993-05-13 1998-09-24 Gehring Gmbh & Co Maschf Verfahren zur Feinbearbeitung von Werkstück-Oberflächen
JP3534807B2 (ja) 1994-02-28 2004-06-07 三菱電機株式会社 レーザ切断方法
US5747769A (en) * 1995-11-13 1998-05-05 General Electric Company Method of laser forming a slot
US6271102B1 (en) 1998-02-27 2001-08-07 International Business Machines Corporation Method and system for dicing wafers, and semiconductor structures incorporating the products thereof
US6987786B2 (en) 1998-07-02 2006-01-17 Gsi Group Corporation Controlling laser polarization
JP3518405B2 (ja) 1999-04-02 2004-04-12 三菱電機株式会社 レーザ加工方法及びレーザ加工装置
US6255621B1 (en) 2000-01-31 2001-07-03 International Business Machines Corporation Laser cutting method for forming magnetic recording head sliders
JP4659300B2 (ja) 2000-09-13 2011-03-30 浜松ホトニクス株式会社 レーザ加工方法及び半導体チップの製造方法
KR20020047479A (ko) 2000-12-13 2002-06-22 김경섭 비금속재료의 레이저 절단 방법
CN1257038C (zh) 2000-12-15 2006-05-24 埃克赛尔技术有限公司 半导体材料的激光加工
EP1262315B8 (de) 2001-05-25 2005-01-05 Stork Prints Austria GmbH Verfahren und Vorrichtung zur Herstellung einer Druckform
SG108262A1 (en) 2001-07-06 2005-01-28 Inst Data Storage Method and apparatus for cutting a multi-layer substrate by dual laser irradiation
GB2399311B (en) 2003-03-04 2005-06-15 Xsil Technology Ltd Laser machining using an active assist gas
JP4926707B2 (ja) * 2003-08-22 2012-05-09 ダニスコ エイ／エス 封入化抗菌材料
US7173212B1 (en) 2004-02-13 2007-02-06 Semak Vladimir V Method and apparatus for laser cutting and drilling of semiconductor materials and glass
US7129114B2 (en) 2004-03-10 2006-10-31 Micron Technology, Inc. Methods relating to singulating semiconductor wafers and wafer scale assemblies
US8148211B2 (en) * 2004-06-18 2012-04-03 Electro Scientific Industries, Inc. Semiconductor structure processing using multiple laser beam spots spaced on-axis delivered simultaneously
US7633034B2 (en) * 2004-06-18 2009-12-15 Electro Scientific Industries, Inc. Semiconductor structure processing using multiple laser beam spots overlapping lengthwise on a structure
US7169687B2 (en) * 2004-11-03 2007-01-30 Intel Corporation Laser micromachining method
JP4684697B2 (ja) * 2005-03-22 2011-05-18 株式会社ディスコ ウエーハ破断方法
JP4751634B2 (ja) 2005-03-31 2011-08-17 富士通セミコンダクター株式会社 半導体装置の製造方法
US7611966B2 (en) 2005-05-05 2009-11-03 Intel Corporation Dual pulsed beam laser micromachining method
JP2006315017A (ja) 2005-05-11 2006-11-24 Canon Inc レーザ切断方法および被切断部材
US7244906B2 (en) * 2005-08-30 2007-07-17 Electro Scientific Industries, Inc. Energy monitoring or control of individual vias formed during laser micromachining
JP2007277636A (ja) 2006-04-06 2007-10-25 Yamazaki Mazak Corp レーザ焼入れ方法
US8624157B2 (en) * 2006-05-25 2014-01-07 Electro Scientific Industries, Inc. Ultrashort laser pulse wafer scribing
GB2444037A (en) 2006-11-27 2008-05-28 Xsil Technology Ltd Laser Machining
JP2008166445A (ja) 2006-12-27 2008-07-17 Enzan Seisakusho Co Ltd 半導体基板の切断方法
US9029731B2 (en) 2007-01-26 2015-05-12 Electro Scientific Industries, Inc. Methods and systems for laser processing continuously moving sheet material
US7817685B2 (en) 2007-01-26 2010-10-19 Electro Scientific Industries, Inc. Methods and systems for generating pulse trains for material processing
JP2009049390A (ja) 2007-07-25 2009-03-05 Rohm Co Ltd 窒化物半導体素子およびその製造方法
US8729427B2 (en) 2009-03-27 2014-05-20 Electro Scientific Industries, Inc. Minimizing thermal effect during material removal using a laser
JP5573192B2 (ja) * 2010-01-22 2014-08-20 三菱電機株式会社 半導体装置の製造方法

Also Published As

Publication number Publication date
WO2011123673A2 (en) 2011-10-06
WO2011123673A3 (en) 2012-01-19
TWI532559B (zh) 2016-05-11
KR20130051435A (ko) 2013-05-20
US8383984B2 (en) 2013-02-26
EP2553717B1 (en) 2020-05-06
CN102844844A (zh) 2012-12-26
CN102844844B (zh) 2015-11-25
EP2553717A2 (en) 2013-02-06
JP2013524521A (ja) 2013-06-17
TW201201945A (en) 2012-01-16
KR101754186B1 (ko) 2017-07-19
US8679948B2 (en) 2014-03-25
US20110240616A1 (en) 2011-10-06
EP2553717A4 (en) 2017-08-16
US20130237035A1 (en) 2013-09-12

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