CN102844844B - 用于易碎材料的镭射单一化的改善的方法及装置 - Google Patents

用于易碎材料的镭射单一化的改善的方法及装置 Download PDF

Info

Publication number
CN102844844B
CN102844844B CN201180017460.XA CN201180017460A CN102844844B CN 102844844 B CN102844844 B CN 102844844B CN 201180017460 A CN201180017460 A CN 201180017460A CN 102844844 B CN102844844 B CN 102844844B
Authority
CN
China
Prior art keywords
radium
shine
parameter comprises
laser
devices
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
CN201180017460.XA
Other languages
English (en)
Chinese (zh)
Other versions
CN102844844A (zh
Inventor
大迫康
达瑞·芬恩
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Electro Scientific Industries Inc
Original Assignee
Electro Scientific Industries Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Electro Scientific Industries Inc filed Critical Electro Scientific Industries Inc
Publication of CN102844844A publication Critical patent/CN102844844A/zh
Application granted granted Critical
Publication of CN102844844B publication Critical patent/CN102844844B/zh
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/0006—Working by laser beam, e.g. welding, cutting or boring taking account of the properties of the material involved
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
    • B23K26/06—Shaping the laser beam, e.g. by masks or multi-focusing
    • B23K26/062—Shaping the laser beam, e.g. by masks or multi-focusing by direct control of the laser beam
    • B23K26/0626—Energy control of the laser beam
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/36—Removing material
    • B23K26/38—Removing material by boring or cutting
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/36—Removing material
    • B23K26/40—Removing material taking account of the properties of the material involved
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/268—Bombardment with radiation with high-energy radiation using electromagnetic radiation, e.g. laser radiation
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K2103/00—Materials to be soldered, welded or cut
    • B23K2103/50—Inorganic material, e.g. metals, not provided for in B23K2103/02 – B23K2103/26
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K2103/00—Materials to be soldered, welded or cut
    • B23K2103/50—Inorganic material, e.g. metals, not provided for in B23K2103/02 – B23K2103/26
    • B23K2103/56—Inorganic material, e.g. metals, not provided for in B23K2103/02 – B23K2103/26 semiconducting

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Optics & Photonics (AREA)
  • Plasma & Fusion (AREA)
  • Mechanical Engineering (AREA)
  • Computer Hardware Design (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Electromagnetism (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Laser Beam Processing (AREA)
  • Dicing (AREA)
  • Processing Of Stones Or Stones Resemblance Materials (AREA)
CN201180017460.XA 2010-04-02 2011-03-31 用于易碎材料的镭射单一化的改善的方法及装置 Active CN102844844B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US12/753,367 2010-04-02
US12/753,367 US8383984B2 (en) 2010-04-02 2010-04-02 Method and apparatus for laser singulation of brittle materials
PCT/US2011/030768 WO2011123673A2 (en) 2010-04-02 2011-03-31 Improved method and apparatus for laser singulation of brittle materials

Publications (2)

Publication Number Publication Date
CN102844844A CN102844844A (zh) 2012-12-26
CN102844844B true CN102844844B (zh) 2015-11-25

Family

ID=44708399

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201180017460.XA Active CN102844844B (zh) 2010-04-02 2011-03-31 用于易碎材料的镭射单一化的改善的方法及装置

Country Status (7)

Country Link
US (2) US8383984B2 (enExample)
EP (1) EP2553717B1 (enExample)
JP (1) JP5823490B2 (enExample)
KR (1) KR101754186B1 (enExample)
CN (1) CN102844844B (enExample)
TW (1) TWI532559B (enExample)
WO (1) WO2011123673A2 (enExample)

Families Citing this family (36)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9346130B2 (en) 2008-12-17 2016-05-24 Electro Scientific Industries, Inc. Method for laser processing glass with a chamfered edge
US9669613B2 (en) * 2010-12-07 2017-06-06 Ipg Photonics Corporation Laser lift off systems and methods that overlap irradiation zones to provide multiple pulses of laser irradiation per location at an interface between layers to be separated
US20110287607A1 (en) * 2010-04-02 2011-11-24 Electro Scientific Industries, Inc. Method and apparatus for improved wafer singulation
ES2398787B1 (es) * 2010-12-16 2014-02-18 BSH Electrodomésticos España S.A. Procedimiento para fabricar una placa de campo de cocción para un campo de cocción
US8976340B2 (en) * 2011-04-15 2015-03-10 Advanced Scientific Concepts, Inc. Ladar sensor for landing, docking and approach
US8863864B1 (en) 2011-05-26 2014-10-21 Us Synthetic Corporation Liquid-metal-embrittlement resistant superabrasive compact, and related drill bits and methods
US8950519B2 (en) 2011-05-26 2015-02-10 Us Synthetic Corporation Polycrystalline diamond compacts with partitioned substrate, polycrystalline diamond table, or both
US9062505B2 (en) 2011-06-22 2015-06-23 Us Synthetic Corporation Method for laser cutting polycrystalline diamond structures
US9297411B2 (en) 2011-05-26 2016-03-29 Us Synthetic Corporation Bearing assemblies, apparatuses, and motor assemblies using the same
DE102011054891B4 (de) * 2011-10-28 2017-10-19 Osram Opto Semiconductors Gmbh Verfahren zum Durchtrennen eines Halbleiterbauelementverbunds
KR20140138134A (ko) * 2012-02-28 2014-12-03 일렉트로 싸이언티픽 인더스트리이즈 인코포레이티드 강화 유리를 분리하는 방법과 장치 및 이에 의해 제조된 물품
US10357850B2 (en) 2012-09-24 2019-07-23 Electro Scientific Industries, Inc. Method and apparatus for machining a workpiece
US9828278B2 (en) 2012-02-28 2017-11-28 Electro Scientific Industries, Inc. Method and apparatus for separation of strengthened glass and articles produced thereby
US9227868B2 (en) 2012-02-29 2016-01-05 Electro Scientific Industries, Inc. Method and apparatus for machining strengthened glass and articles produced thereby
TWI483802B (zh) * 2012-12-14 2015-05-11 Ind Tech Res Inst 雷射加工裝置及其方法
US9919380B2 (en) 2013-02-23 2018-03-20 Coherent, Inc. Shaping of brittle materials with controlled surface and bulk properties
DE102013005136A1 (de) 2013-03-26 2014-10-02 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Verfahren zurn Abtragen von sprödhartem Material mittels Laserstrahlung
JP6162018B2 (ja) * 2013-10-15 2017-07-12 株式会社ディスコ ウエーハの加工方法
JP6696897B2 (ja) * 2013-10-29 2020-05-20 ルミレッズ ホールディング ベーフェー 発光デバイスのウエハを分離する方法
US9653638B2 (en) 2013-12-20 2017-05-16 Sunpower Corporation Contacts for solar cells formed by directing a laser beam with a particular shape on a metal foil over a dielectric region
WO2015168276A1 (en) * 2014-04-29 2015-11-05 Ipg Photonics Corporation High speed laser cutting of amorphous metals
US20160184926A1 (en) * 2014-12-30 2016-06-30 Suss Microtec Photonic Systems Inc. Laser ablation system including variable energy beam to minimize etch-stop material damage
JP6649705B2 (ja) * 2015-06-22 2020-02-19 株式会社ディスコ レーザー加工方法
KR102698971B1 (ko) 2015-08-26 2024-08-27 일렉트로 싸이언티픽 인더스트리이즈 인코포레이티드 기체 흐름에 대한 레이저 스캔 시퀀싱 및 방향
US10994373B2 (en) 2015-12-18 2021-05-04 Kimberly-Clark Worldwide, Inc. Method of laser cutting a web structure
TWI724282B (zh) * 2018-03-02 2021-04-11 寬輔科技股份有限公司 測試晶粒的雷射切割方法
JP7072993B2 (ja) * 2018-07-31 2022-05-23 株式会社ディスコ チップ製造方法
TWI678342B (zh) 2018-11-09 2019-12-01 財團法人工業技術研究院 形成導角的切割方法
KR102158832B1 (ko) * 2018-11-20 2020-09-22 한화정밀기계 주식회사 웨이퍼 절단 방법 및 절단 장치
PL4035823T3 (pl) * 2019-02-25 2024-06-24 Wsoptics Technologies Gmbh Proces obróbki wiązką przedmiotu obrabianego w kształcie płyty lub rury
JP7062147B2 (ja) * 2020-02-21 2022-05-02 ヌヴォトンテクノロジージャパン株式会社 個片化方法
US11854888B2 (en) * 2020-06-22 2023-12-26 Applied Materials, Inc. Laser scribing trench opening control in wafer dicing using hybrid laser scribing and plasma etch approach
US20220305588A1 (en) * 2021-03-24 2022-09-29 Applied Materials, Inc. Methods to dice optical devices with optimization of laser pulse spatial distribution
CN113799277B (zh) * 2021-08-10 2024-04-19 威科赛乐微电子股份有限公司 一种晶体多线切割方法
US20240120284A1 (en) * 2022-10-06 2024-04-11 Thinsic Inc Carbon Assisted Semiconductor Dicing And Method
DE102023002414A1 (de) * 2023-06-14 2024-12-19 Azur Space Solar Power Gmbh Verfahren zur Herstellung eines Grabens bei einer III-V Mehrfachsolarzelle

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20020086544A1 (en) * 2000-12-15 2002-07-04 Adrian Boyle Laser machining of semiconductor materials
US20060258047A1 (en) * 2005-05-11 2006-11-16 Canon Kabushiki Kaisha Method for laser cutting and method of producing function elements
US7173212B1 (en) * 2004-02-13 2007-02-06 Semak Vladimir V Method and apparatus for laser cutting and drilling of semiconductor materials and glass
CN101253019A (zh) * 2005-08-30 2008-08-27 伊雷克托科学工业股份有限公司 激光微加工时所形成的个别通孔的能量监视与控制
US20090046754A1 (en) * 2007-07-25 2009-02-19 Rohm Co., Ltd. Nitride semiconductor device and method of manufacturing the same

Family Cites Families (29)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2720669B2 (ja) 1991-11-11 1998-03-04 株式会社大林組 レーザービームによる厚板の溶断方法
DE4316012C2 (de) 1993-05-13 1998-09-24 Gehring Gmbh & Co Maschf Verfahren zur Feinbearbeitung von Werkstück-Oberflächen
JP3534807B2 (ja) 1994-02-28 2004-06-07 三菱電機株式会社 レーザ切断方法
US5747769A (en) * 1995-11-13 1998-05-05 General Electric Company Method of laser forming a slot
US6271102B1 (en) 1998-02-27 2001-08-07 International Business Machines Corporation Method and system for dicing wafers, and semiconductor structures incorporating the products thereof
US6987786B2 (en) 1998-07-02 2006-01-17 Gsi Group Corporation Controlling laser polarization
JP3518405B2 (ja) 1999-04-02 2004-04-12 三菱電機株式会社 レーザ加工方法及びレーザ加工装置
US6255621B1 (en) * 2000-01-31 2001-07-03 International Business Machines Corporation Laser cutting method for forming magnetic recording head sliders
JP4659300B2 (ja) 2000-09-13 2011-03-30 浜松ホトニクス株式会社 レーザ加工方法及び半導体チップの製造方法
KR20020047479A (ko) 2000-12-13 2002-06-22 김경섭 비금속재료의 레이저 절단 방법
EP1262315B8 (de) 2001-05-25 2005-01-05 Stork Prints Austria GmbH Verfahren und Vorrichtung zur Herstellung einer Druckform
SG108262A1 (en) 2001-07-06 2005-01-28 Inst Data Storage Method and apparatus for cutting a multi-layer substrate by dual laser irradiation
GB2399311B (en) 2003-03-04 2005-06-15 Xsil Technology Ltd Laser machining using an active assist gas
US20070104809A1 (en) * 2003-08-22 2007-05-10 Danisco A/S Composition comprising a bacteriocin and an extract from a plant of the labiatae family
US7129114B2 (en) 2004-03-10 2006-10-31 Micron Technology, Inc. Methods relating to singulating semiconductor wafers and wafer scale assemblies
US7633034B2 (en) * 2004-06-18 2009-12-15 Electro Scientific Industries, Inc. Semiconductor structure processing using multiple laser beam spots overlapping lengthwise on a structure
US8148211B2 (en) * 2004-06-18 2012-04-03 Electro Scientific Industries, Inc. Semiconductor structure processing using multiple laser beam spots spaced on-axis delivered simultaneously
US7169687B2 (en) * 2004-11-03 2007-01-30 Intel Corporation Laser micromachining method
JP4684697B2 (ja) * 2005-03-22 2011-05-18 株式会社ディスコ ウエーハ破断方法
JP4751634B2 (ja) 2005-03-31 2011-08-17 富士通セミコンダクター株式会社 半導体装置の製造方法
US7611966B2 (en) * 2005-05-05 2009-11-03 Intel Corporation Dual pulsed beam laser micromachining method
JP2007277636A (ja) 2006-04-06 2007-10-25 Yamazaki Mazak Corp レーザ焼入れ方法
US8624157B2 (en) * 2006-05-25 2014-01-07 Electro Scientific Industries, Inc. Ultrashort laser pulse wafer scribing
GB2444037A (en) 2006-11-27 2008-05-28 Xsil Technology Ltd Laser Machining
JP2008166445A (ja) 2006-12-27 2008-07-17 Enzan Seisakusho Co Ltd 半導体基板の切断方法
US7817685B2 (en) 2007-01-26 2010-10-19 Electro Scientific Industries, Inc. Methods and systems for generating pulse trains for material processing
US9029731B2 (en) 2007-01-26 2015-05-12 Electro Scientific Industries, Inc. Methods and systems for laser processing continuously moving sheet material
US8729427B2 (en) 2009-03-27 2014-05-20 Electro Scientific Industries, Inc. Minimizing thermal effect during material removal using a laser
JP5573192B2 (ja) * 2010-01-22 2014-08-20 三菱電機株式会社 半導体装置の製造方法

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20020086544A1 (en) * 2000-12-15 2002-07-04 Adrian Boyle Laser machining of semiconductor materials
US7173212B1 (en) * 2004-02-13 2007-02-06 Semak Vladimir V Method and apparatus for laser cutting and drilling of semiconductor materials and glass
US20060258047A1 (en) * 2005-05-11 2006-11-16 Canon Kabushiki Kaisha Method for laser cutting and method of producing function elements
CN101253019A (zh) * 2005-08-30 2008-08-27 伊雷克托科学工业股份有限公司 激光微加工时所形成的个别通孔的能量监视与控制
US20090046754A1 (en) * 2007-07-25 2009-02-19 Rohm Co., Ltd. Nitride semiconductor device and method of manufacturing the same

Also Published As

Publication number Publication date
EP2553717A4 (en) 2017-08-16
WO2011123673A3 (en) 2012-01-19
US20110240616A1 (en) 2011-10-06
KR101754186B1 (ko) 2017-07-19
TW201201945A (en) 2012-01-16
JP2013524521A (ja) 2013-06-17
EP2553717B1 (en) 2020-05-06
WO2011123673A2 (en) 2011-10-06
CN102844844A (zh) 2012-12-26
EP2553717A2 (en) 2013-02-06
US8383984B2 (en) 2013-02-26
US8679948B2 (en) 2014-03-25
TWI532559B (zh) 2016-05-11
JP5823490B2 (ja) 2015-11-25
US20130237035A1 (en) 2013-09-12
KR20130051435A (ko) 2013-05-20

Similar Documents

Publication Publication Date Title
CN102844844B (zh) 用于易碎材料的镭射单一化的改善的方法及装置
US8609512B2 (en) Method for laser singulation of chip scale packages on glass substrates
US20100252959A1 (en) Method for improved brittle materials processing
US8735772B2 (en) Method and apparatus for improved laser scribing of opto-electric devices
US20120175652A1 (en) Method and apparatus for improved singulation of light emitting devices
CN111085786B (zh) 使用激光脉冲进行的材料切割
JP2013524520A (ja) 改良されたウェハシンギュレーション方法及び装置
CN1301178C (zh) 半导体中微结构的紫外线激光烧蚀的图案化
CN104334312A (zh) 使一工件中具有延伸深度虚饰的激光切割
JP2002192369A (ja) レーザ加工方法及びレーザ加工装置
JP2018523291A (ja) 半導体加工対象物のスクライブ方法
TWI726656B (zh) 優化的鐳射切割
JP2020021968A (ja) 半導体加工対象物のスクライブ方法
HK40017511A (en) Material cutting using laser pulses
HK40017511B (zh) 使用激光脉冲进行的材料切割
KR20130142165A (ko) 발광 소자의 개선된 싱귤레이션 방법 및 장치
HK40029347A (en) Optimised laser cutting
HK40029347B (en) Optimised laser cutting

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
C14 Grant of patent or utility model
GR01 Patent grant