JP5816617B2 - 基材用金属箔及びその製造方法 - Google Patents
基材用金属箔及びその製造方法 Download PDFInfo
- Publication number
- JP5816617B2 JP5816617B2 JP2012511856A JP2012511856A JP5816617B2 JP 5816617 B2 JP5816617 B2 JP 5816617B2 JP 2012511856 A JP2012511856 A JP 2012511856A JP 2012511856 A JP2012511856 A JP 2012511856A JP 5816617 B2 JP5816617 B2 JP 5816617B2
- Authority
- JP
- Japan
- Prior art keywords
- layer
- metal foil
- rolling
- thickness
- interface
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 229910052751 metal Inorganic materials 0.000 title claims description 203
- 239000002184 metal Substances 0.000 title claims description 203
- 239000011888 foil Substances 0.000 title claims description 133
- 238000004519 manufacturing process Methods 0.000 title claims description 48
- 239000000758 substrate Substances 0.000 title description 36
- 238000005096 rolling process Methods 0.000 claims description 104
- 229910000831 Steel Inorganic materials 0.000 claims description 68
- 239000010959 steel Substances 0.000 claims description 68
- 229910045601 alloy Inorganic materials 0.000 claims description 47
- 239000000956 alloy Substances 0.000 claims description 47
- 238000000034 method Methods 0.000 claims description 40
- 238000007747 plating Methods 0.000 claims description 37
- 239000000463 material Substances 0.000 claims description 31
- 230000008569 process Effects 0.000 claims description 20
- 230000009467 reduction Effects 0.000 claims description 20
- 229910018072 Al 2 O 3 Inorganic materials 0.000 claims description 17
- 239000000203 mixture Substances 0.000 claims description 15
- 238000005520 cutting process Methods 0.000 claims description 10
- 238000012545 processing Methods 0.000 claims description 9
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 claims description 8
- 230000003746 surface roughness Effects 0.000 claims description 8
- 238000007743 anodising Methods 0.000 claims description 7
- OAKJQQAXSVQMHS-UHFFFAOYSA-N Hydrazine Chemical compound NN OAKJQQAXSVQMHS-UHFFFAOYSA-N 0.000 claims description 6
- 238000009713 electroplating Methods 0.000 claims description 5
- QAOWNCQODCNURD-UHFFFAOYSA-L Sulfate Chemical compound [O-]S([O-])(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-L 0.000 claims description 4
- 229910021529 ammonia Inorganic materials 0.000 claims description 4
- 238000005097 cold rolling Methods 0.000 claims description 4
- 238000005401 electroluminescence Methods 0.000 claims description 4
- 239000011261 inert gas Substances 0.000 claims description 4
- MUBZPKHOEPUJKR-UHFFFAOYSA-N Oxalic acid Chemical compound OC(=O)C(O)=O MUBZPKHOEPUJKR-UHFFFAOYSA-N 0.000 claims description 3
- ZCDOYSPFYFSLEW-UHFFFAOYSA-N chromate(2-) Chemical compound [O-][Cr]([O-])(=O)=O ZCDOYSPFYFSLEW-UHFFFAOYSA-N 0.000 claims description 3
- 239000012298 atmosphere Substances 0.000 claims description 2
- 230000007797 corrosion Effects 0.000 description 25
- 238000005260 corrosion Methods 0.000 description 25
- 238000006243 chemical reaction Methods 0.000 description 21
- 230000000694 effects Effects 0.000 description 21
- 239000010408 film Substances 0.000 description 17
- 239000004033 plastic Substances 0.000 description 15
- 238000012360 testing method Methods 0.000 description 12
- 238000004458 analytical method Methods 0.000 description 10
- 238000005452 bending Methods 0.000 description 9
- 239000011521 glass Substances 0.000 description 8
- 150000001875 compounds Chemical class 0.000 description 7
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 description 6
- 230000000052 comparative effect Effects 0.000 description 6
- 229910052802 copper Inorganic materials 0.000 description 6
- 239000011669 selenium Substances 0.000 description 6
- 230000007547 defect Effects 0.000 description 5
- 238000004453 electron probe microanalysis Methods 0.000 description 5
- 238000005259 measurement Methods 0.000 description 5
- 239000004065 semiconductor Substances 0.000 description 5
- 229910052709 silver Inorganic materials 0.000 description 5
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 4
- 229910000975 Carbon steel Inorganic materials 0.000 description 4
- 229910004613 CdTe Inorganic materials 0.000 description 4
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 4
- 239000004642 Polyimide Substances 0.000 description 4
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 4
- 229910021417 amorphous silicon Inorganic materials 0.000 description 4
- 238000005336 cracking Methods 0.000 description 4
- 230000008018 melting Effects 0.000 description 4
- 238000002844 melting Methods 0.000 description 4
- 229920001721 polyimide Polymers 0.000 description 4
- 239000000523 sample Substances 0.000 description 4
- 239000004332 silver Substances 0.000 description 4
- 239000010409 thin film Substances 0.000 description 4
- 229910052782 aluminium Inorganic materials 0.000 description 3
- 125000004429 atom Chemical group 0.000 description 3
- 239000010962 carbon steel Substances 0.000 description 3
- 238000010438 heat treatment Methods 0.000 description 3
- 239000002985 plastic film Substances 0.000 description 3
- 229920006255 plastic film Polymers 0.000 description 3
- 229910052711 selenium Inorganic materials 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 238000004544 sputter deposition Methods 0.000 description 3
- 229910052717 sulfur Inorganic materials 0.000 description 3
- 230000000007 visual effect Effects 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- 229910015372 FeAl Inorganic materials 0.000 description 2
- 239000004677 Nylon Substances 0.000 description 2
- 239000004952 Polyamide Substances 0.000 description 2
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 2
- 239000000853 adhesive Substances 0.000 description 2
- 230000001070 adhesive effect Effects 0.000 description 2
- 229910000905 alloy phase Inorganic materials 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 230000015556 catabolic process Effects 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 239000006185 dispersion Substances 0.000 description 2
- 238000001035 drying Methods 0.000 description 2
- 238000002149 energy-dispersive X-ray emission spectroscopy Methods 0.000 description 2
- 230000014509 gene expression Effects 0.000 description 2
- 239000001257 hydrogen Substances 0.000 description 2
- 229910052739 hydrogen Inorganic materials 0.000 description 2
- 125000004435 hydrogen atom Chemical group [H]* 0.000 description 2
- 238000005286 illumination Methods 0.000 description 2
- 238000010191 image analysis Methods 0.000 description 2
- 230000001771 impaired effect Effects 0.000 description 2
- 239000012528 membrane Substances 0.000 description 2
- 229910052757 nitrogen Inorganic materials 0.000 description 2
- 229920001778 nylon Polymers 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 229920002647 polyamide Polymers 0.000 description 2
- 229920000728 polyester Polymers 0.000 description 2
- 229920000098 polyolefin Polymers 0.000 description 2
- 229920005989 resin Polymers 0.000 description 2
- 239000011347 resin Substances 0.000 description 2
- 238000000682 scanning probe acoustic microscopy Methods 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- QTWJRLJHJPIABL-UHFFFAOYSA-N 2-methylphenol;3-methylphenol;4-methylphenol Chemical compound CC1=CC=C(O)C=C1.CC1=CC=CC(O)=C1.CC1=CC=CC=C1O QTWJRLJHJPIABL-UHFFFAOYSA-N 0.000 description 1
- 229910000838 Al alloy Inorganic materials 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- 229910001209 Low-carbon steel Inorganic materials 0.000 description 1
- CTQNGGLPUBDAKN-UHFFFAOYSA-N O-Xylene Chemical compound CC1=CC=CC=C1C CTQNGGLPUBDAKN-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 description 1
- 230000003466 anti-cipated effect Effects 0.000 description 1
- 239000007864 aqueous solution Substances 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 239000010953 base metal Substances 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- DVRDHUBQLOKMHZ-UHFFFAOYSA-N chalcopyrite Chemical group [S-2].[S-2].[Fe+2].[Cu+2] DVRDHUBQLOKMHZ-UHFFFAOYSA-N 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- UIPVMGDJUWUZEI-UHFFFAOYSA-N copper;selanylideneindium Chemical compound [Cu].[In]=[Se] UIPVMGDJUWUZEI-UHFFFAOYSA-N 0.000 description 1
- 229930003836 cresol Natural products 0.000 description 1
- 238000004132 cross linking Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000003618 dip coating Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 238000007772 electroless plating Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 239000007888 film coating Substances 0.000 description 1
- 238000009501 film coating Methods 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 229920006015 heat resistant resin Polymers 0.000 description 1
- 238000005098 hot rolling Methods 0.000 description 1
- 230000007062 hydrolysis Effects 0.000 description 1
- 238000006460 hydrolysis reaction Methods 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- 230000001939 inductive effect Effects 0.000 description 1
- 229910000765 intermetallic Inorganic materials 0.000 description 1
- NLYAJNPCOHFWQQ-UHFFFAOYSA-N kaolin Chemical compound O.O.O=[Al]O[Si](=O)O[Si](=O)O[Al]=O NLYAJNPCOHFWQQ-UHFFFAOYSA-N 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- 239000012046 mixed solvent Substances 0.000 description 1
- 239000012299 nitrogen atmosphere Substances 0.000 description 1
- 125000000962 organic group Chemical group 0.000 description 1
- 230000003405 preventing effect Effects 0.000 description 1
- 150000003839 salts Chemical class 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- HPALAKNZSZLMCH-UHFFFAOYSA-M sodium;chloride;hydrate Chemical compound O.[Na+].[Cl-] HPALAKNZSZLMCH-UHFFFAOYSA-M 0.000 description 1
- 239000007921 spray Substances 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 239000007858 starting material Substances 0.000 description 1
- 238000003756 stirring Methods 0.000 description 1
- 229910052714 tellurium Inorganic materials 0.000 description 1
- CPUDPFPXCZDNGI-UHFFFAOYSA-N triethoxy(methyl)silane Chemical compound CCO[Si](C)(OCC)OCC CPUDPFPXCZDNGI-UHFFFAOYSA-N 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- 238000004804 winding Methods 0.000 description 1
- 239000008096 xylene Substances 0.000 description 1
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B15/00—Layered products comprising a layer of metal
- B32B15/01—Layered products comprising a layer of metal all layers being exclusively metallic
- B32B15/012—Layered products comprising a layer of metal all layers being exclusively metallic one layer being formed of an iron alloy or steel, another layer being formed of aluminium or an aluminium alloy
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B21—MECHANICAL METAL-WORKING WITHOUT ESSENTIALLY REMOVING MATERIAL; PUNCHING METAL
- B21D—WORKING OR PROCESSING OF SHEET METAL OR METAL TUBES, RODS OR PROFILES WITHOUT ESSENTIALLY REMOVING MATERIAL; PUNCHING METAL
- B21D39/00—Application of procedures in order to connect objects or parts, e.g. coating with sheet metal otherwise than by plating; Tube expanders
-
- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22C—ALLOYS
- C22C1/00—Making non-ferrous alloys
- C22C1/02—Making non-ferrous alloys by melting
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C2/00—Hot-dipping or immersion processes for applying the coating material in the molten state without affecting the shape; Apparatus therefor
- C23C2/02—Pretreatment of the material to be coated, e.g. for coating on selected surface areas
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C2/00—Hot-dipping or immersion processes for applying the coating material in the molten state without affecting the shape; Apparatus therefor
- C23C2/04—Hot-dipping or immersion processes for applying the coating material in the molten state without affecting the shape; Apparatus therefor characterised by the coating material
- C23C2/12—Aluminium or alloys based thereon
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C2/00—Hot-dipping or immersion processes for applying the coating material in the molten state without affecting the shape; Apparatus therefor
- C23C2/26—After-treatment
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C2/00—Hot-dipping or immersion processes for applying the coating material in the molten state without affecting the shape; Apparatus therefor
- C23C2/26—After-treatment
- C23C2/261—After-treatment in a gas atmosphere, e.g. inert or reducing atmosphere
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C2/00—Hot-dipping or immersion processes for applying the coating material in the molten state without affecting the shape; Apparatus therefor
- C23C2/26—After-treatment
- C23C2/28—Thermal after-treatment, e.g. treatment in oil bath
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C28/00—Coating for obtaining at least two superposed coatings either by methods not provided for in a single one of groups C23C2/00 - C23C26/00 or by combinations of methods provided for in subclasses C23C and C25C or C25D
- C23C28/02—Coating for obtaining at least two superposed coatings either by methods not provided for in a single one of groups C23C2/00 - C23C26/00 or by combinations of methods provided for in subclasses C23C and C25C or C25D only coatings only including layers of metallic material
- C23C28/023—Coating for obtaining at least two superposed coatings either by methods not provided for in a single one of groups C23C2/00 - C23C26/00 or by combinations of methods provided for in subclasses C23C and C25C or C25D only coatings only including layers of metallic material only coatings of metal elements only
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/036—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes
- H01L31/0392—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including thin films deposited on metallic or insulating substrates ; characterised by specific substrate materials or substrate features or by the presence of intermediate layers, e.g. barrier layers, on the substrate
- H01L31/03926—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including thin films deposited on metallic or insulating substrates ; characterised by specific substrate materials or substrate features or by the presence of intermediate layers, e.g. barrier layers, on the substrate comprising a flexible substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/036—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes
- H01L31/0392—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including thin films deposited on metallic or insulating substrates ; characterised by specific substrate materials or substrate features or by the presence of intermediate layers, e.g. barrier layers, on the substrate
- H01L31/03926—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including thin films deposited on metallic or insulating substrates ; characterised by specific substrate materials or substrate features or by the presence of intermediate layers, e.g. barrier layers, on the substrate comprising a flexible substrate
- H01L31/03928—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including thin films deposited on metallic or insulating substrates ; characterised by specific substrate materials or substrate features or by the presence of intermediate layers, e.g. barrier layers, on the substrate comprising a flexible substrate including AIBIIICVI compound, e.g. CIS, CIGS deposited on metal or polymer foils
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/541—CuInSe2 material PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/12—All metal or with adjacent metals
- Y10T428/12014—All metal or with adjacent metals having metal particles
- Y10T428/12028—Composite; i.e., plural, adjacent, spatially distinct metal components [e.g., layers, etc.]
- Y10T428/12049—Nonmetal component
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/12—All metal or with adjacent metals
- Y10T428/12014—All metal or with adjacent metals having metal particles
- Y10T428/12028—Composite; i.e., plural, adjacent, spatially distinct metal components [e.g., layers, etc.]
- Y10T428/12063—Nonparticulate metal component
- Y10T428/12069—Plural nonparticulate metal components
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/12—All metal or with adjacent metals
- Y10T428/12014—All metal or with adjacent metals having metal particles
- Y10T428/12028—Composite; i.e., plural, adjacent, spatially distinct metal components [e.g., layers, etc.]
- Y10T428/12063—Nonparticulate metal component
- Y10T428/12069—Plural nonparticulate metal components
- Y10T428/12076—Next to each other
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Physics & Mathematics (AREA)
- Crystallography & Structural Chemistry (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Thermal Sciences (AREA)
- Oil, Petroleum & Natural Gas (AREA)
- Metal Rolling (AREA)
- Other Surface Treatments For Metallic Materials (AREA)
- Laminated Bodies (AREA)
- Coating With Molten Metal (AREA)
- Solid-Phase Diffusion Into Metallic Material Surfaces (AREA)
Description
本願は、2010年11月17日に、日本に出願された特願2010−257327号に基づき優先権を主張し、その内容をここに援用する。
(1)本発明の一態様にかかる基材用金属箔は、厚さが10〜200μmである鋼層と、前記鋼層上のAl含有金属層と、前記鋼層と前記Al含有金属層との界面に存在する複数の粒状合金と、を備える金属箔であって:前記金属箔を圧延方向と直交する板幅方向が観察面となるように板厚方向に沿って平面切断した切断面に表れる、前記Al含有金属層の表面の切断線を輪郭曲線とし、前記輪郭曲線に位相補償型フィルタを適用して求めた、あるいは、前記輪郭曲線の各極点の座標から最小二乗法を用いて求めた直線を輪郭平均直線とするとき、前記輪郭平均直線からの距離が10μm超となる前記輪郭曲線の前記Al含有金属層の表面側に凸である極大点の個数が零であり;前記複数の粒状合金のそれぞれの球相当直径をxμm、前記Al含有金属層の厚さをTμmとしたとき、前記複数の粒状合金のうち、95%以上が下記の式1を満たす。
x≦0.5T ・・・(式1)
(2)上記(1)に記載の基材用金属箔であって、前記切断面に表れる、前記鋼層の界面の切断線を鋼層の界面曲線とし、前記界面曲線に位相補償型フィルタを適用して求めた、あるいは、前記界面曲線の各極点の座標から最小二乗法を用いて求めた直線を界面平均直線とするとき、前記界面平均直線からの距離が0.5μm超となる前記界面曲線の極点の数が、前記界面平均直線上の基準長さ100μmあたり少なくとも1つ含まれてもよい。
(3)上記(1)又は(2)に記載の基材用金属箔であって、球相当直径が1.5μm以上である前記粒状合金間の平均間隔をyμmとしたとき、前記平均間隔yが100μm以下であってもよい。
(4)上記(1)〜(3)のいずれか一項に記載の基材用金属箔であって、前記複数の粒状合金の球相当直径の平均値をxaveμmとしたとき、前記平均直径xaveと前記平均間隔yとが、下記の式2及び式3を満たしてもよい。
0.06<xave 2/y (式2)
xave<y (式3)
(5)上記(1)〜(4)のいずれか一項に記載の基材用金属箔であって、前記Al含有金属層の厚さが0.1〜30μmであってもよい。
(6)上記(1)〜(5)のいずれか一項に記載の基材用金属箔であって、前記Al含有金属層上に、さらに、厚さ0.01〜0.08μmのAlN層、又は、厚さ0.01〜50μmのAl2O3層を有してもよい。
(7)上記(1)〜(5)のいずれか一項に記載の基材用金属箔であって、前記Al含有金属層上に、さらに、厚さ0.1〜8μmのCr層、又は、厚さ0.1〜8μmのNi層を有してもよい。
(8)上記(1)〜(5)のいずれか一項に記載の基材用金属箔であって、前記Al含有金属層上に、さらに、ゾルゲル層、及び、ラミネート層から選択される少なくとも1種の皮膜を有してもよい。
(9)本発明の一態様にかかる基材用金属箔の製造方法は、上記(1)〜(5)のいずれか一項に記載の金属箔を製造する方法であって:鋼板を、200〜500μmの厚さになるまで圧延する第1圧延処理と;前記圧延処理後の前記鋼鈑を、60〜100質量%のAl、0〜15質量%のSi、及び、0〜40質量%のCuを含有させためっき浴を用いてめっきするめっき処理と;前記めっき処理後の前記鋼鈑を、複数のバックアップロールを備えた圧延機を用いて、冷間で、合計圧下率が50%以上となるように圧延する第2圧延処理とを有する。
(10)上記(9)に記載の基材用金属箔の製造方法であって、前記めっき処理の前記Al含有めっき浴が、Al:68.2質量%、Si:4.7質量%、Cu:27.1質量%、又は、Al:68質量%、Cu:32質量%、という組成から各成分について±5質量%以内の範囲の組成を有してもよい。
(11)上記(9)又は(10)に記載の基材用金属箔の製造方法であって、前記第2圧延処理が、少なくとも3パス以上の冷間での圧延であって、第1パスより第2パスの圧下率を高く、前記第2パスより第3パスの圧下率を低く、前記第3パス以降の圧下率を前記第3パスの圧下率より低くしてもよい。
(12)上記(9)〜(11)のいずれか一項に記載の基材用金属箔の製造方法であって、前記第2圧延処理の圧延で、各パス間で鋼鈑の圧延方向を入れ替えるリバース圧延を行ってもよい。
(13)上記(9)〜(12)のいずれか一項に記載の基材用金属箔の製造方法であって、前記第2圧延処理の圧延で、表面粗さがRa200μm以下の鏡面状態である圧延ロールを用いてもよい。
(14)上記(9)〜(13)のいずれか一項に記載の基材用金属箔の製造方法であって、前記第2圧延処理後の前記鋼鈑に、表面粗さがRa1μm以下の鏡面状態である圧延ロールを用いてブライト仕上げ圧延するスキンパス圧延処理をさらに有してもよい。
(15)上記(9)〜(14)のいずれか一項に記載の基材用金属箔の製造方法であって、前記第2圧延処理後の前記鋼鈑に、アンモニア又はヒドラジンを10体積%±2体積%含有する不活性ガス雰囲気内で、500〜600℃の温度範囲にて、1〜10時間の加熱を行う加熱処理をさらに有してもよい。
(16)上記(9)〜(14)のいずれか一項に記載の基材用金属箔の製造方法であって、前記第2圧延処理後の前記鋼鈑に、硫酸アルマイト、しゅう酸アルマイト、又は、クロム酸アルマイトから選択される少なくとも1種を用いて、陽極酸化を行う陽極酸化処理をさらに有してもよい。
(17)上記(9)〜(14)のいずれか一項に記載の基材用金属箔の製造方法であって、前記第2圧延処理後の前記鋼鈑に、Cr層、又は、Ni層を形成させる電解めっき処理をさらに有してもよい。
(18)上記(9)〜(14)のいずれか一項に記載の基材用金属箔の製造方法であって、前記第2圧延処理後の前記鋼鈑に、ゾルゲル層、及び、ラミネート層から選択される少なくとも1種の皮膜を形成させる成膜処理をさらに有してもよい。
x≦0.5T (式1)
を満たす必要がある。
0.06<xave 2/y (式2)
xave<y (式3)
実験例1では、第一圧延処理として、軟鋼を熱間及び冷間で圧延し、めっき処理として、この圧延鋼鈑に溶融Alめっきを行い、第二圧延処理として、この溶融Alめっき鋼板を冷間圧延して、金属箔を製造した。一部の金属箔は必要に応じて、第二圧延処理でリバース圧延を実施した。同様に、一部の金属箔は必要に応じて、第二圧延処理後にスキンパス圧延処理を実施した。表1に、第一圧延処理、めっき処理、第二圧延処理、及び、スキンパス圧延処理の製造条件を記す。表中、下線で示す数値は、本発明の範囲外であることを示す。
比較例3は、輪郭平均直線からの距離が10μm超となる極大点が存在し、そして、x≦0.5Tを満足する粒状合金が95%未満となった例である。そのため、耐食性と180°密着曲げ性とが不十分となった。
比較例4〜10は、x≦0.5Tを満足する粒状合金が95%未満となった例である。そのため、180度密着曲げ性が不十分となった。
比較例11は、第1圧延処理後の板厚が190μmのサンプルであるため、板厚が薄くて、その後のめっき処理に進める事ができなかった例である。
比較例12は、第1圧延処理後の板厚が510μmのサンプルであるため、めっき処理は実施できたものの、その後の第2圧延処理において、狙った圧下率でサンプルを作製することができなかった例である。
実験例2では、実験例1の実施例1で作製した金属箔に、AlN層、Al2O3層、Cr層、Ni層、ゾルゲル層、及び、ラミネート層を形成させ、その膜厚を変化させることでCIGS光電変換効率を調べた。CIGS光電変換効率は、8%未満をNG(NotGood)、8%以上10%未満をG(Good)、10以上12%未満をVG(Very Good)、12%以上をGG(Greatly Good)として評価した。そして、NGを不合格とした。
ゾルゲル層の形成では、ゾル調製の出発原料として10モルのメチルトリエトキシシランと10モルのテトラエトキシシランの混合物を用い、この混合物に20モルのエタノールを加えて良く撹拌した。その後、撹拌しながら、2モルの酢酸と100モルの水を混合した酢酸水溶液を滴下し加水分解を行った。この様にして得たゾルに100モルのエタノールを加えて最終的なゾルを得た。ディップコーティング法によってめっき普通鋼箔の両面にこのゾルを塗布した後、空気中で100℃、1分間の乾燥を行った。その後、窒素雰囲気中で昇温速度10℃/分として室温から400℃まで昇温し、400℃で30分間焼き付けてゾルゲル層を得た。
ラミネート層の形成では、ナイロン系接着剤をクレゾールとキシレンの質量比70:30の混合溶剤に15質量%の濃度で溶解し、その溶解物を樹脂に塗布した後、その樹脂を300℃に加熱されためっき普通鋼箔に1MPaの圧力で熱圧着することで熱ラミネートした。表3にその結果を示す。
実施例34〜36は、Al2O3層の厚さが最適に制御されているため、さらに優れた光電変換効率を示す。
実施例38〜40は、Cr層の厚さが最適に制御されているため、さらに優れた光電変換効率を示す。
実施例42〜44は、Ni層の厚さが最適に制御されているため、さらに優れた光電変換効率を示す。
実施例46〜48は、ゾルゲル層の厚さが最適に制御されているため、さらに優れた光電変換効率を示す。
実施例50〜52は、ラミネート層の厚さが最適に制御されているため、さらに優れた光電変換効率を示す。
2 粒状合金
3 Al含有金属層
Claims (18)
- 厚さが10〜200μmである鋼層と、前記鋼層上のAl含有金属層と、前記鋼層と前記Al含有金属層との界面に存在する複数の粒状合金と、を備える金属箔であって:
前記金属箔を圧延方向と直交する板幅方向が観察面となるように板厚方向に沿って平面切断した切断面に表れる、前記Al含有金属層の表面の切断線を輪郭曲線とし、前記輪郭曲線に位相補償型フィルタを適用して求めた、あるいは、前記輪郭曲線の各極点の座標から最小二乗法を用いて求めた直線を輪郭平均直線とするとき、前記輪郭平均直線からの距離が10μm超となる前記輪郭曲線の前記Al含有金属層の表面側に凸である極大点の個数が零であり;
前記複数の粒状合金のそれぞれの球相当直径をxμm、前記Al含有金属層の厚さをTμmとしたとき、前記複数の粒状合金のうち、95%以上が下記の式1を満たす;
ことを特徴とする太陽電池及び有機エレクトロルミネセンスの基材用金属箔。
x≦0.5T ・・・(式1) - 前記切断面に表れる、前記鋼層の界面の切断線を鋼層の界面曲線とし、前記界面曲線に位相補償型フィルタを適用して求めた、あるいは、前記界面曲線の各極点の座標から最小二乗法を用いて求めた直線を界面平均直線とするとき、前記界面平均直線からの距離が0.5μm超となる前記界面曲線の極点の数が、前記界面平均直線上の基準長さ100μmあたり少なくとも1つ含まれる
ことを特徴とする請求項1に記載の金属箔。 - 球相当直径が1.5μm以上である前記粒状合金間の平均間隔をyμmとしたとき、前記平均間隔yが100μm以下である
ことを特徴とする請求項1または請求項2に記載の金属箔。 - 前記複数の粒状合金の球相当直径の平均値をxaveμmとしたとき、前記平均直径xaveと前記平均間隔yとが、下記の式2及び式3を満たす
ことを特徴とする請求項1〜3のいずれか一項に記載の金属箔。
0.06<xave 2/y (式2)
xave<y (式3) - 前記Al含有金属層の厚さが0.1〜30μmである
ことを特徴とする請求項1〜4のいずれか一項に記載の金属箔。 - 前記Al含有金属層上に、さらに、厚さ0.01〜0.08μmのAlN層、又は、厚さ0.01〜50μmのAl2O3層を有する
ことを特徴とする請求項1〜5のいずれか一項に記載の金属箔。 - 前記Al含有金属層上に、さらに、厚さ0.1〜8μmのCr層、又は、厚さ0.1〜8μmのNi層を有する
ことを特徴とする請求項1〜5のいずれか一項に記載の金属箔。 - 前記Al含有金属層上に、さらに、ゾルゲル層、及び、ラミネート層から選択される少なくとも1種の皮膜を有する
ことを特徴とする請求項1〜5のいずれか一項に記載の金属箔。 - 請求項1〜5の何れか一項に記載の金属箔を製造する方法であって:
鋼板を、200〜500μmの厚さになるまで圧延する第1圧延処理と;
前記圧延処理後の前記鋼鈑を、60〜100質量%のAl、0〜15質量%のSi、及び、0〜40質量%のCuを含有させためっき浴を用いてめっきするめっき処理と;
前記めっき処理後の前記鋼鈑を、複数のバックアップロールを備えた圧延機を用いて、冷間で、合計圧下率が50%以上となるように圧延する第2圧延処理と;
を有することを特徴とする太陽電池及び有機エレクトロルミネセンスの基材用金属箔の製造方法。 - 前記めっき処理の前記Al含有めっき浴が、Al:68.2質量%、Si:4.7質量%、Cu:27.1質量%、又は、Al:68質量%、Cu:32質量%、という組成から各成分について±5質量%以内の範囲の組成を有する
ことを特徴とする請求項9に記載の金属箔の製造方法。 - 前記第2圧延処理が、少なくとも3パス以上の冷間での圧延であって、第1パスより第2パスの圧下率を高く、前記第2パスより第3パスの圧下率を低く、前記第3パス以降の圧下率を前記第3パスの圧下率より低くする
ことを特徴とする請求項9または請求項10に記載の金属箔の製造方法。 - 前記第2圧延処理の圧延で、各パス間で鋼鈑の圧延方向を入れ替えるリバース圧延を行う
ことを特徴とする請求項9〜11のいずれか一項に記載の金属箔の製造方法。 - 前記第2圧延処理の圧延で、表面粗さがRa200μm以下の鏡面状態である圧延ロールを用いる
ことを特徴とする請求項9〜12のいずれか一項に記載の金属箔の製造方法。 - 前記第2圧延処理後の前記鋼鈑に、表面粗さがRa1μm以下の鏡面状態である圧延ロールを用いてブライト仕上げ圧延するスキンパス圧延処理をさらに有する
ことを特徴とする請求項9〜13のいずれか一項に記載の金属箔の製造方法。 - 前記第2圧延処理後の前記鋼鈑に、アンモニア又はヒドラジンを10体積%±2体積%含有する不活性ガス雰囲気内で、500〜600℃の温度範囲にて、1〜10時間の加熱を行う加熱処理をさらに有する
ことを特徴とする請求項9〜14のいずれか一項に記載の金属箔の製造方法。 - 前記第2圧延処理後の前記鋼鈑に、硫酸アルマイト、しゅう酸アルマイト、又は、クロム酸アルマイトから選択される少なくとも1種を用いて、陽極酸化を行う陽極酸化処理をさらに有する
ことを特徴とする請求項9〜14のいずれか一項に記載の金属箔の製造方法。 - 前記第2圧延処理後の前記鋼鈑に、Cr層、又は、Ni層を形成させる電解めっき処理をさらに有する
ことを特徴とする請求項9〜14のいずれか一項に記載の金属箔の製造方法。 - 前記第2圧延処理後の前記鋼鈑に、ゾルゲル層、及び、ラミネート層から選択される少なくとも1種の皮膜を形成させる成膜処理をさらに有する
ことを特徴とする請求項9〜14のいずれか一項に記載の金属箔の製造方法。
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2012511856A JP5816617B2 (ja) | 2010-11-17 | 2011-11-16 | 基材用金属箔及びその製造方法 |
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2010257327 | 2010-11-17 | ||
JP2010257327 | 2010-11-17 | ||
PCT/JP2011/076390 WO2012067143A1 (ja) | 2010-11-17 | 2011-11-16 | 基材用金属箔及びその製造方法 |
JP2012511856A JP5816617B2 (ja) | 2010-11-17 | 2011-11-16 | 基材用金属箔及びその製造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JPWO2012067143A1 JPWO2012067143A1 (ja) | 2014-05-12 |
JP5816617B2 true JP5816617B2 (ja) | 2015-11-18 |
Family
ID=46084066
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2012511856A Expired - Fee Related JP5816617B2 (ja) | 2010-11-17 | 2011-11-16 | 基材用金属箔及びその製造方法 |
Country Status (5)
Country | Link |
---|---|
US (1) | US9902134B2 (ja) |
JP (1) | JP5816617B2 (ja) |
CN (1) | CN103249857B (ja) |
TW (1) | TWI561371B (ja) |
WO (1) | WO2012067143A1 (ja) |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2013159844A (ja) * | 2012-02-08 | 2013-08-19 | Nippon Steel & Sumitomo Metal Corp | アルマイト処理アルミめっき鋼板 |
WO2014133075A1 (ja) * | 2013-02-28 | 2014-09-04 | 新日鉄住金マテリアルズ株式会社 | 鋼アルミニウム複合箔 |
KR102339436B1 (ko) * | 2015-02-03 | 2021-12-14 | 도요 알루미늄 가부시키가이샤 | 알루미늄박, 전자 디바이스, 롤투롤용 알루미늄박, 및 알루미늄박의 제조 방법 |
CN112813432B (zh) * | 2020-12-30 | 2022-02-01 | 南昌大学 | 金属基体非晶涂层的制备方法 |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS61281861A (ja) * | 1985-06-04 | 1986-12-12 | ア−ムコ、インコ−ポレ−テツド | 耐酸化性鉄質母材箔とその製法 |
JPS6428349A (en) * | 1987-07-24 | 1989-01-30 | Nippon Steel Corp | Manufacture of aluminum-plated steel sheet and steel foil using stainless steel as base material |
JPH01150404A (ja) * | 1987-12-07 | 1989-06-13 | Nippon Steel Corp | アルミニウムめっき不銹鋼箔の圧延方法 |
JP2002093573A (ja) * | 2000-09-14 | 2002-03-29 | Nisshin Steel Co Ltd | 有機el素子用絶縁性封止部材 |
Family Cites Families (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE3415460A1 (de) | 1984-04-25 | 1985-10-31 | INTERATOM GmbH, 5060 Bergisch Gladbach | Hochtemperaturfester abgaskatalysator-traegerkoerper aus stahlblechen mit hohem aluminiumanteil und verfahren zu seiner herstellung |
DE3766263D1 (de) | 1986-01-30 | 1991-01-03 | Nippon Steel Corp | Rostfreies band als katalysatortraeger fuer kraftfahrzeugabgase und verfahren zu seiner herstellung. |
JP2932700B2 (ja) | 1991-01-08 | 1999-08-09 | 大同特殊鋼株式会社 | 刃物材とその製造方法 |
CA2070046A1 (en) * | 1991-06-28 | 1992-12-29 | Richard J. Sadey | Metal foil with improved bonding to substrates and method for making said foil |
KR100212596B1 (ko) | 1995-02-24 | 1999-08-02 | 하마다 야스유키(코가 노리스케) | 용융 알루미늄 도금 강판과 그 제조방법 및 합금층 제어 장치 |
DE69602226T2 (de) * | 1995-05-19 | 1999-08-19 | Matsushita Electric Works Ltd | Eisenlegierung mit Fe-Al Diffusionsschicht und Verfahren zu ihrer Herstellung |
TWI237334B (en) | 2002-04-05 | 2005-08-01 | Nippon Steel Corp | A gold bonding wire for a semiconductor device and a method for producing the same |
US7601672B2 (en) * | 2002-11-20 | 2009-10-13 | Nippon Steel Corporation | High Al stainless steel sheet and honeycomb bodies employing them |
CN1527071A (zh) | 2003-09-23 | 2004-09-08 | 甘国工 | 有增强附着力的金属保护层的高反射镜及其制造方法 |
JP2006080370A (ja) | 2004-09-10 | 2006-03-23 | Matsushita Electric Ind Co Ltd | 太陽電池 |
JP2006295035A (ja) | 2005-04-14 | 2006-10-26 | Matsushita Electric Ind Co Ltd | 絶縁層が形成された太陽電池用基板およびその製造方法、ならびにそれを用いた太陽電池およびその製造方法 |
NZ594317A (en) | 2009-01-16 | 2013-01-25 | Hot-dip Zinc-Aluminium-Magnesium-Silicon-Chromium alloy-coated steel material | |
CN101817128B (zh) | 2009-04-21 | 2012-01-11 | 兰州理工大学 | 一种低熔点铝基钎料的制备方法 |
-
2011
- 2011-11-16 WO PCT/JP2011/076390 patent/WO2012067143A1/ja active Application Filing
- 2011-11-16 US US13/885,309 patent/US9902134B2/en active Active
- 2011-11-16 JP JP2012511856A patent/JP5816617B2/ja not_active Expired - Fee Related
- 2011-11-16 CN CN201180054765.8A patent/CN103249857B/zh not_active Expired - Fee Related
- 2011-11-17 TW TW100142083A patent/TWI561371B/zh not_active IP Right Cessation
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS61281861A (ja) * | 1985-06-04 | 1986-12-12 | ア−ムコ、インコ−ポレ−テツド | 耐酸化性鉄質母材箔とその製法 |
JPS6428349A (en) * | 1987-07-24 | 1989-01-30 | Nippon Steel Corp | Manufacture of aluminum-plated steel sheet and steel foil using stainless steel as base material |
JPH01150404A (ja) * | 1987-12-07 | 1989-06-13 | Nippon Steel Corp | アルミニウムめっき不銹鋼箔の圧延方法 |
JP2002093573A (ja) * | 2000-09-14 | 2002-03-29 | Nisshin Steel Co Ltd | 有機el素子用絶縁性封止部材 |
Also Published As
Publication number | Publication date |
---|---|
JPWO2012067143A1 (ja) | 2014-05-12 |
CN103249857B (zh) | 2015-11-25 |
CN103249857A (zh) | 2013-08-14 |
TWI561371B (en) | 2016-12-11 |
TW201228817A (en) | 2012-07-16 |
US9902134B2 (en) | 2018-02-27 |
WO2012067143A1 (ja) | 2012-05-24 |
US20130236734A1 (en) | 2013-09-12 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP6529553B2 (ja) | ポリイミド層含有フレキシブル基板、ポリイミド層含有フレキシブル太陽電池用基板、フレキシブル太陽電池およびそれらの製造方法 | |
JP5816615B2 (ja) | 基材用金属箔 | |
US7989077B2 (en) | Metal strip product | |
JP5816617B2 (ja) | 基材用金属箔及びその製造方法 | |
CN105063620B (zh) | 一种光电材料用Zn/Cu‑Ag/Cu‑Au复合镀层钢带的生产方法 | |
JP5932132B2 (ja) | 鋼アルミニウム複合箔 | |
TW201114588A (en) | Copper foil for printed wiring board | |
KR101568710B1 (ko) | 구리층을 갖는 철계부스바 및 상기 철계부스바 제조방법 | |
JP2013211266A (ja) | テープ状導電材料、太陽電池用インターコネクター及び太陽電池モジュール | |
WO2015022821A1 (ja) | 全反射特性と耐食性に優れたAl被覆鋼板およびその製造法 | |
CN105908231B (zh) | 电子元件用镀Sn材料 | |
JP5916425B2 (ja) | Cis太陽電池およびその製造方法 | |
JP2019147974A (ja) | アルミニウム積層体およびその製造方法 | |
JP2011127153A (ja) | めっき材料とその製造方法 | |
CN104726664B (zh) | 光学及医学仪器零部件包装用双复合镀层捆带生产方法 | |
CN114226455A (zh) | 一种控制板带材Al基合金镀层厚度的方法 | |
JP2016113702A (ja) | 陽極酸化処理用Al被覆鋼板およびその製造法 | |
WO2012057002A1 (ja) | 太陽電池用電極線材、その基材および基材の製造方法 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20140925 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20150616 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20150730 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20150901 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20150928 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 5816617 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
S111 | Request for change of ownership or part of ownership |
Free format text: JAPANESE INTERMEDIATE CODE: R313115 |
|
R360 | Written notification for declining of transfer of rights |
Free format text: JAPANESE INTERMEDIATE CODE: R360 |
|
R360 | Written notification for declining of transfer of rights |
Free format text: JAPANESE INTERMEDIATE CODE: R360 |
|
R371 | Transfer withdrawn |
Free format text: JAPANESE INTERMEDIATE CODE: R371 |
|
S111 | Request for change of ownership or part of ownership |
Free format text: JAPANESE INTERMEDIATE CODE: R313115 |
|
R350 | Written notification of registration of transfer |
Free format text: JAPANESE INTERMEDIATE CODE: R350 |
|
S533 | Written request for registration of change of name |
Free format text: JAPANESE INTERMEDIATE CODE: R313533 |
|
S531 | Written request for registration of change of domicile |
Free format text: JAPANESE INTERMEDIATE CODE: R313531 |
|
R350 | Written notification of registration of transfer |
Free format text: JAPANESE INTERMEDIATE CODE: R350 |
|
R350 | Written notification of registration of transfer |
Free format text: JAPANESE INTERMEDIATE CODE: R350 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
LAPS | Cancellation because of no payment of annual fees |