JP5812959B2 - 撮像装置 - Google Patents

撮像装置 Download PDF

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Publication number
JP5812959B2
JP5812959B2 JP2012205581A JP2012205581A JP5812959B2 JP 5812959 B2 JP5812959 B2 JP 5812959B2 JP 2012205581 A JP2012205581 A JP 2012205581A JP 2012205581 A JP2012205581 A JP 2012205581A JP 5812959 B2 JP5812959 B2 JP 5812959B2
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JP
Japan
Prior art keywords
output
transistor
current signal
current
signal
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP2012205581A
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English (en)
Japanese (ja)
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JP2013146045A (ja
JP2013146045A5 (enExample
Inventor
櫻井　克仁
克仁 櫻井
一拓 佐野
一拓 佐野
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Canon Inc
Original Assignee
Canon Inc
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Filing date
Publication date
Application filed by Canon Inc filed Critical Canon Inc
Priority to JP2012205581A priority Critical patent/JP5812959B2/ja
Priority to US13/711,414 priority patent/US9356585B2/en
Publication of JP2013146045A publication Critical patent/JP2013146045A/ja
Publication of JP2013146045A5 publication Critical patent/JP2013146045A5/ja
Application granted granted Critical
Publication of JP5812959B2 publication Critical patent/JP5812959B2/ja
Expired - Fee Related legal-status Critical Current
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    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K3/00—Circuits for generating electric pulses; Monostable, bistable or multistable circuits
    • H03K3/86—Generating pulses by means of delay lines and not covered by the preceding subgroups
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K4/00—Generating pulses having essentially a finite slope or stepped portions
    • H03K4/02—Generating pulses having essentially a finite slope or stepped portions having stepped portions, e.g. staircase waveform
    • H03K4/026—Generating pulses having essentially a finite slope or stepped portions having stepped portions, e.g. staircase waveform using digital techniques
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K5/00—Manipulating of pulses not covered by one of the other main groups of this subclass
    • H03K5/22—Circuits having more than one input and one output for comparing pulses or pulse trains with each other according to input signal characteristics, e.g. slope, integral
    • H03K5/24—Circuits having more than one input and one output for comparing pulses or pulse trains with each other according to input signal characteristics, e.g. slope, integral the characteristic being amplitude
    • H03K5/2472—Circuits having more than one input and one output for comparing pulses or pulse trains with each other according to input signal characteristics, e.g. slope, integral the characteristic being amplitude using field effect transistors
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
    • H04N25/77—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
    • H04N25/78—Readout circuits for addressed sensors, e.g. output amplifiers or A/D converters
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/199—Back-illuminated image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/802—Geometry or disposition of elements in pixels, e.g. address-lines or gate electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/803—Pixels having integrated switching, control, storage or amplification elements

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  • Engineering & Computer Science (AREA)
  • Multimedia (AREA)
  • Signal Processing (AREA)
  • Physics & Mathematics (AREA)
  • Nonlinear Science (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
  • Solid State Image Pick-Up Elements (AREA)
JP2012205581A 2011-12-15 2012-09-19 撮像装置 Expired - Fee Related JP5812959B2 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2012205581A JP5812959B2 (ja) 2011-12-15 2012-09-19 撮像装置
US13/711,414 US9356585B2 (en) 2011-12-15 2012-12-11 Image pickup device

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2011274890 2011-12-15
JP2011274890 2011-12-15
JP2012205581A JP5812959B2 (ja) 2011-12-15 2012-09-19 撮像装置

Publications (3)

Publication Number Publication Date
JP2013146045A JP2013146045A (ja) 2013-07-25
JP2013146045A5 JP2013146045A5 (enExample) 2014-12-11
JP5812959B2 true JP5812959B2 (ja) 2015-11-17

Family

ID=48609516

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2012205581A Expired - Fee Related JP5812959B2 (ja) 2011-12-15 2012-09-19 撮像装置

Country Status (2)

Country Link
US (1) US9356585B2 (enExample)
JP (1) JP5812959B2 (enExample)

Families Citing this family (16)

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Publication number Priority date Publication date Assignee Title
JP6108878B2 (ja) * 2013-03-01 2017-04-05 キヤノン株式会社 撮像装置、撮像装置の駆動方法、撮像システム、撮像システムの駆動方法
KR102007386B1 (ko) * 2013-05-30 2019-08-05 에스케이하이닉스 주식회사 디지털 아날로그 변환기, 그를 포함하는 이미지 센싱 장치 및 이미지 센싱 장치의 구동방법
WO2015111398A1 (ja) * 2014-01-21 2015-07-30 パナソニックＩｐマネジメント株式会社 固体撮像装置
JP6548391B2 (ja) 2014-03-31 2019-07-24 キヤノン株式会社 光電変換装置および撮像システム
JP6249881B2 (ja) * 2014-05-22 2017-12-20 オリンパス株式会社 固体撮像装置および撮像装置
JP6494335B2 (ja) 2015-03-05 2019-04-03 キヤノン株式会社 光電変換装置、光電変換装置の駆動方法、および、光電変換システム
CN104867431B (zh) * 2015-06-12 2019-06-21 京东方科技集团股份有限公司 一种像素电路及其驱动方法、探测器
KR20170038981A (ko) 2015-09-30 2017-04-10 에스케이하이닉스 주식회사 이미지 센싱 장치
CN110265416B (zh) * 2015-12-22 2020-10-27 索尼公司 成像器件和电子设备
US10536657B2 (en) * 2016-03-18 2020-01-14 Semiconductor Energy Laboratory Co., Ltd. Imaging device and electronic device
US10084468B1 (en) * 2017-03-22 2018-09-25 Raytheon Company Low power analog-to-digital converter
US10475784B2 (en) * 2017-05-30 2019-11-12 Vanguard International Semiconductor Corporation Semiconductor structure with a resistor and a transistor and method for forming the same
JP7003126B2 (ja) 2017-06-14 2022-01-20 株式会社半導体エネルギー研究所 撮像装置、及び電子機器
JP7607644B2 (ja) 2020-04-17 2024-12-27 株式会社半導体エネルギー研究所 撮像装置および電子機器
US12041367B2 (en) * 2020-10-26 2024-07-16 Alphacore, Inc. Column-parallel ADC architectures for high-speed CMOS image sensors
CN114625207A (zh) * 2022-03-21 2022-06-14 四川创安微电子有限公司 一种dac电路及其增益调整方法

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JP2001069404A (ja) 1999-08-27 2001-03-16 Canon Inc 光電変換装置
JP2001157114A (ja) 1999-11-24 2001-06-08 Matsushita Electric Ind Co Ltd イメージセンサおよびイメージセンサユニット
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Also Published As

Publication number Publication date
JP2013146045A (ja) 2013-07-25
US20130154705A1 (en) 2013-06-20
US9356585B2 (en) 2016-05-31

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