JP5808026B2 - 電荷計測システム - Google Patents
電荷計測システム Download PDFInfo
- Publication number
- JP5808026B2 JP5808026B2 JP2013554056A JP2013554056A JP5808026B2 JP 5808026 B2 JP5808026 B2 JP 5808026B2 JP 2013554056 A JP2013554056 A JP 2013554056A JP 2013554056 A JP2013554056 A JP 2013554056A JP 5808026 B2 JP5808026 B2 JP 5808026B2
- Authority
- JP
- Japan
- Prior art keywords
- charge
- transistor
- voltage
- switch
- transistors
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
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Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R27/00—Arrangements for measuring resistance, reactance, impedance, or electric characteristics derived therefrom
- G01R27/02—Measuring real or complex resistance, reactance, impedance, or other two-pole characteristics derived therefrom, e.g. time constant
- G01R27/26—Measuring inductance or capacitance; Measuring quality factor, e.g. by using the resonance method; Measuring loss factor; Measuring dielectric constants ; Measuring impedance or related variables
- G01R27/2605—Measuring capacitance
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
- H03F1/52—Circuit arrangements for protecting such amplifiers
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R29/00—Arrangements for measuring or indicating electric quantities not covered by groups G01R19/00 - G01R27/00
- G01R29/24—Arrangements for measuring quantities of charge
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
- H03F1/52—Circuit arrangements for protecting such amplifiers
- H03F1/523—Circuit arrangements for protecting such amplifiers for amplifiers using field-effect devices
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- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Amplifiers (AREA)
Description
Claims (3)
- 電荷測定システムであって、
入力段およびフィードバックキャパシタンスを有する演算増幅器である電荷積分器に接続されたキャパシタンス検出器を備え、
前記フィードバックキャパシタンスは、前記電荷積分器の出力と前記電荷積分器の入力との間に接続され、
前記電荷積分器の前記入力段は、対称接続された一対のJFET型トランジスタを備え、
前記一対のJFET型トランジスタの両方のゲートは、前記電荷積分器の入力に接続され、
前記一対のJFET型トランジスタのうちの第1のトランジスタのソースは、並列接続の第1スイッチおよび第1電流源に直列に接続された並列接続の第1抵抗および第1キャパシタを介してグランドに接続され、
前記一対のJFET型トランジスタのうちの第2のトランジスタのソースは、並列接続の第2スイッチおよび第2電流源に直列に接続された並列接続の第2抵抗および第2キャパシタを介してグランドに接続され、
前記第1のトランジスタのドレインは、対称接続された一対のトランジスタのうちの第3のトランジスタのエミッタに接続され、
前記第2のトランジスタのドレインは、前記対称接続された一対のトランジスタのうちの第4のトランジスタのエミッタに接続され、
前記第3のトランジスタおよび前記第4のトランジスタのベースはそれぞれグランドに接続され、
前記電荷測定システムは、前記電荷積分器の出力電圧が上限電圧限界を超えた後に前記第1スイッチおよび前記第2スイッチの一方を開放し、前記電荷積分器の前記出力電圧が下限電圧限界を下回った時に前記第1スイッチおよび前記第2スイッチの他方を開放することにより、前記電荷積分器の前記フィードバックキャパシタンスをディスチャージする評価システムをさらに備える、電荷測定システム。 - 前記電荷積分器の前記入力段は、少なくとも2対の平行な対称接続されたJFETタイプトランジスタを備えている、請求項1に記載の電荷測定システム。
- 前記評価システムは、前記フィードバックキャパシタンスの電圧が基準電圧に達した後、前記第1スイッチ及び前記第2スイッチを閉じる、請求項1または請求項2に記載の電荷測定システム。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
PL393985A PL220994B1 (pl) | 2011-02-22 | 2011-02-22 | Układ do pomiaru ładunku elektrycznego |
PLPL393985 | 2011-02-22 | ||
PCT/IB2012/050816 WO2012114291A1 (en) | 2011-02-22 | 2012-02-22 | A system for measuring electrical charge |
Publications (3)
Publication Number | Publication Date |
---|---|
JP2014506094A JP2014506094A (ja) | 2014-03-06 |
JP2014506094A5 JP2014506094A5 (ja) | 2015-04-02 |
JP5808026B2 true JP5808026B2 (ja) | 2015-11-10 |
Family
ID=46045036
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2013554056A Expired - Fee Related JP5808026B2 (ja) | 2011-02-22 | 2012-02-22 | 電荷計測システム |
Country Status (7)
Country | Link |
---|---|
US (1) | US9103860B2 (ja) |
EP (1) | EP2678697B1 (ja) |
JP (1) | JP5808026B2 (ja) |
KR (1) | KR101606964B1 (ja) |
CN (1) | CN103518140B (ja) |
PL (1) | PL220994B1 (ja) |
WO (1) | WO2012114291A1 (ja) |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8810262B2 (en) * | 2012-11-13 | 2014-08-19 | National Tsing Hua University | Integrated low-noise sensing circuit with efficient bias stabilization |
PL227598B1 (pl) * | 2013-12-14 | 2018-01-31 | Uniwersytet Jagiellonski | Sposób pomiaru wolnozmiennego ładunku elektrycznego i układ do pomiaru wolnozmiennego ładunku elektrycznego |
CN111751632B (zh) * | 2020-07-22 | 2023-03-14 | 北京卫星环境工程研究所 | 一种空间环境微弱电荷测量系统 |
Family Cites Families (16)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4047113A (en) * | 1976-05-13 | 1977-09-06 | Sheller-Globe Corporation | Feedback circuitry for charge digitizer |
JPS58201410A (ja) * | 1982-05-20 | 1983-11-24 | Matsushita Electric Ind Co Ltd | 増幅器 |
JPS60117639A (ja) * | 1983-11-30 | 1985-06-25 | Fujitsu Ltd | 電荷積分回路 |
JPH01183905A (ja) * | 1988-01-18 | 1989-07-21 | Nec Corp | 差動増幅回路 |
US5374897A (en) * | 1993-10-21 | 1994-12-20 | National Semiconductor Corporation | Balanced, high-speed differential input stage for Op-amps |
JPH0837284A (ja) * | 1994-07-21 | 1996-02-06 | Nippondenso Co Ltd | 半導体集積回路装置 |
US5537078A (en) | 1995-03-31 | 1996-07-16 | Linear Technology Corporation | Operational amplifier with JFET inputs having low input bias current and methods for using same |
DE19841308A1 (de) * | 1998-09-10 | 2000-04-06 | Schwerionenforsch Gmbh | Vorrichtung und Verfahren zum Umwandeln von Ladungsfluß in ein Frequenzsignal |
US6307223B1 (en) * | 1998-12-11 | 2001-10-23 | Lovoltech, Inc. | Complementary junction field effect transistors |
US6680837B1 (en) * | 2001-06-14 | 2004-01-20 | Analog Devices, Inc. | Hiccup-mode short circuit protection circuit and method for linear voltage regulators |
DE102005038875A1 (de) * | 2005-05-25 | 2006-11-30 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. | Kapazitätsmessschaltung |
US7339402B2 (en) * | 2006-02-13 | 2008-03-04 | Texas Instruments Incorporated | Differential amplifier with over-voltage protection and method |
TWI385616B (zh) * | 2006-12-29 | 2013-02-11 | Novatek Microelectronics Corp | 驅動裝置及其驅動方法 |
US8354847B2 (en) | 2007-08-15 | 2013-01-15 | Electrostatic Answers Llc | Electrometer with in-measurement range adjustment and methods thereof for measuring electrostatic charge |
JP4366540B2 (ja) * | 2007-09-10 | 2009-11-18 | オンキヨー株式会社 | パルス幅変調回路及びそれを用いたスイッチングアンプ |
US8260565B2 (en) * | 2008-08-22 | 2012-09-04 | Brookhaven Science Associates, Llc | High dynamic range charge measurements |
-
2011
- 2011-02-22 PL PL393985A patent/PL220994B1/pl unknown
-
2012
- 2012-02-22 EP EP12719450.4A patent/EP2678697B1/en not_active Not-in-force
- 2012-02-22 WO PCT/IB2012/050816 patent/WO2012114291A1/en active Application Filing
- 2012-02-22 KR KR1020137022192A patent/KR101606964B1/ko active IP Right Grant
- 2012-02-22 JP JP2013554056A patent/JP5808026B2/ja not_active Expired - Fee Related
- 2012-02-22 CN CN201280009795.1A patent/CN103518140B/zh not_active Expired - Fee Related
- 2012-02-22 US US13/985,594 patent/US9103860B2/en not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
US9103860B2 (en) | 2015-08-11 |
EP2678697A1 (en) | 2014-01-01 |
PL393985A1 (pl) | 2012-08-27 |
CN103518140B (zh) | 2016-06-01 |
EP2678697B1 (en) | 2016-02-17 |
KR101606964B1 (ko) | 2016-04-11 |
JP2014506094A (ja) | 2014-03-06 |
CN103518140A (zh) | 2014-01-15 |
WO2012114291A1 (en) | 2012-08-30 |
KR20140004735A (ko) | 2014-01-13 |
PL220994B1 (pl) | 2016-02-29 |
US20140049269A1 (en) | 2014-02-20 |
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