JP5802009B2 - 半導体装置の作製方法 - Google Patents

半導体装置の作製方法 Download PDF

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Publication number
JP5802009B2
JP5802009B2 JP2010280703A JP2010280703A JP5802009B2 JP 5802009 B2 JP5802009 B2 JP 5802009B2 JP 2010280703 A JP2010280703 A JP 2010280703A JP 2010280703 A JP2010280703 A JP 2010280703A JP 5802009 B2 JP5802009 B2 JP 5802009B2
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Japan
Prior art keywords
oxide semiconductor
semiconductor layer
single crystal
crystal region
component
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Expired - Fee Related
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JP2010280703A
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English (en)
Japanese (ja)
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JP2011146698A5 (https=
JP2011146698A (ja
Inventor
山崎　舜平
舜平 山崎
拓也 廣橋
拓也 廣橋
高橋　正弘
正弘 高橋
貴志 島津
貴志 島津
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Semiconductor Energy Laboratory Co Ltd
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Semiconductor Energy Laboratory Co Ltd
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Priority to JP2010280703A priority Critical patent/JP5802009B2/ja
Publication of JP2011146698A publication Critical patent/JP2011146698A/ja
Publication of JP2011146698A5 publication Critical patent/JP2011146698A5/ja
Application granted granted Critical
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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/22—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using physical deposition, e.g. vacuum deposition or sputtering
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/031—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/6755—Oxide semiconductors, e.g. zinc oxide, copper aluminium oxide or cadmium stannate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/40—Crystalline structures
    • H10D62/405—Orientations of crystalline planes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00—Subject matter not provided for in other groups of this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3402—Deposited materials, e.g. layers characterised by the chemical composition
    • H10P14/3424—Deposited materials, e.g. layers characterised by the chemical composition being Group IIB-VIA materials
    • H10P14/3426—Oxides
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3402—Deposited materials, e.g. layers characterised by the chemical composition
    • H10P14/3434—Deposited materials, e.g. layers characterised by the chemical composition being oxide semiconductor materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/38—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by treatments done after the formation of the materials
    • H10P14/3802—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth

Landscapes

  • Thin Film Transistor (AREA)
  • Liquid Crystal (AREA)
  • Recrystallisation Techniques (AREA)
  • Electroluminescent Light Sources (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
  • Formation Of Insulating Films (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
JP2010280703A 2009-12-18 2010-12-16 半導体装置の作製方法 Expired - Fee Related JP5802009B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2010280703A JP5802009B2 (ja) 2009-12-18 2010-12-16 半導体装置の作製方法

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2009288494 2009-12-18
JP2009288494 2009-12-18
JP2010280703A JP5802009B2 (ja) 2009-12-18 2010-12-16 半導体装置の作製方法

Publications (3)

Publication Number Publication Date
JP2011146698A JP2011146698A (ja) 2011-07-28
JP2011146698A5 JP2011146698A5 (https=) 2014-01-16
JP5802009B2 true JP5802009B2 (ja) 2015-10-28

Family

ID=44149803

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2010280703A Expired - Fee Related JP5802009B2 (ja) 2009-12-18 2010-12-16 半導体装置の作製方法

Country Status (5)

Country Link
US (1) US9034104B2 (https=)
JP (1) JP5802009B2 (https=)
KR (1) KR101830195B1 (https=)
TW (1) TWI555056B (https=)
WO (1) WO2011074506A1 (https=)

Families Citing this family (32)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11101266B2 (en) * 2009-10-12 2021-08-24 Monolithic 3D Inc. 3D device and devices with bonding
SG188112A1 (en) 2009-10-30 2013-03-28 Semiconductor Energy Lab Logic circuit and semiconductor device
CN103400857B (zh) 2009-11-27 2016-12-28 株式会社半导体能源研究所 半导体装置和及其制造方法
CN102668098B (zh) 2009-12-28 2015-07-22 株式会社半导体能源研究所 制造半导体装置的方法
KR102008754B1 (ko) * 2010-01-24 2019-08-09 가부시키가이샤 한도오따이 에네루기 켄큐쇼 표시 장치와 이의 제조 방법
WO2011101918A1 (ja) * 2010-02-22 2011-08-25 パナソニック株式会社 発光装置とその製造方法
KR101932576B1 (ko) 2010-09-13 2018-12-26 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 그 제작 방법
TWI562379B (en) 2010-11-30 2016-12-11 Semiconductor Energy Lab Co Ltd Semiconductor device and method for manufacturing semiconductor device
DE112012000601T5 (de) * 2011-01-28 2014-01-30 Semiconductor Energy Laboratory Co., Ltd. Verfahren zum Herstellen einer Halbleitervorrichtung sowie Halbleitervorrichtung
TWI624878B (zh) 2011-03-11 2018-05-21 半導體能源研究所股份有限公司 半導體裝置的製造方法
US8809854B2 (en) 2011-04-22 2014-08-19 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US8916868B2 (en) 2011-04-22 2014-12-23 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing semiconductor device
US8932913B2 (en) 2011-04-22 2015-01-13 Semiconductor Energy Laboratory Co., Ltd. Manufacturing method of semiconductor device
US8878288B2 (en) 2011-04-22 2014-11-04 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US8847233B2 (en) 2011-05-12 2014-09-30 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device having a trenched insulating layer coated with an oxide semiconductor film
US8716073B2 (en) * 2011-07-22 2014-05-06 Semiconductor Energy Laboratory Co., Ltd. Method for processing oxide semiconductor film and method for manufacturing semiconductor device
US9660092B2 (en) * 2011-08-31 2017-05-23 Semiconductor Energy Laboratory Co., Ltd. Oxide semiconductor thin film transistor including oxygen release layer
KR102108572B1 (ko) * 2011-09-26 2020-05-07 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 반도체 장치의 제작 방법
KR101976212B1 (ko) 2011-10-24 2019-05-07 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 반도체 장치의 제작 방법
US8796683B2 (en) * 2011-12-23 2014-08-05 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US8860022B2 (en) 2012-04-27 2014-10-14 Semiconductor Energy Laboratory Co., Ltd. Oxide semiconductor film and semiconductor device
US20130320335A1 (en) * 2012-06-01 2013-12-05 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
US9577446B2 (en) * 2012-12-13 2017-02-21 Semiconductor Energy Laboratory Co., Ltd. Power storage system and power storage device storing data for the identifying power storage device
JP6300589B2 (ja) * 2013-04-04 2018-03-28 株式会社半導体エネルギー研究所 半導体装置の作製方法
US20140299873A1 (en) * 2013-04-05 2014-10-09 Semiconductor Energy Laboratory Co., Ltd. Single-crystal oxide semiconductor, thin film, oxide stack, and formation method thereof
JP6429540B2 (ja) 2013-09-13 2018-11-28 株式会社半導体エネルギー研究所 半導体装置の作製方法
JP2015079946A (ja) 2013-09-13 2015-04-23 株式会社半導体エネルギー研究所 半導体装置の作製方法
JP6537264B2 (ja) * 2013-12-12 2019-07-03 株式会社半導体エネルギー研究所 半導体装置
JP6587497B2 (ja) * 2014-10-31 2019-10-09 株式会社半導体エネルギー研究所 半導体装置
JP6725317B2 (ja) 2016-05-19 2020-07-15 株式会社ジャパンディスプレイ 表示装置
CN112005383A (zh) * 2018-03-12 2020-11-27 株式会社半导体能源研究所 金属氧化物以及包含金属氧化物的晶体管
JP2020181985A (ja) * 2020-06-25 2020-11-05 株式会社ジャパンディスプレイ 表示装置

Family Cites Families (26)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000026119A (ja) 1998-07-09 2000-01-25 Hoya Corp 透明導電性酸化物薄膜を有する物品及びその製造方法
JP2000150861A (ja) * 1998-11-16 2000-05-30 Tdk Corp 酸化物薄膜
JP3276930B2 (ja) * 1998-11-17 2002-04-22 科学技術振興事業団 トランジスタ及び半導体装置
JP4540201B2 (ja) * 2000-09-13 2010-09-08 独立行政法人産業技術総合研究所 ＺｎＯ系酸化物半導体層を有する半導体装置の製法
JP4298194B2 (ja) 2001-11-05 2009-07-15 独立行政法人科学技術振興機構 自然超格子ホモロガス単結晶薄膜の製造方法。
JP4164562B2 (ja) * 2002-09-11 2008-10-15 独立行政法人科学技術振興機構 ホモロガス薄膜を活性層として用いる透明薄膜電界効果型トランジスタ
US7061014B2 (en) * 2001-11-05 2006-06-13 Japan Science And Technology Agency Natural-superlattice homologous single crystal thin film, method for preparation thereof, and device using said single crystal thin film
US7049190B2 (en) * 2002-03-15 2006-05-23 Sanyo Electric Co., Ltd. Method for forming ZnO film, method for forming ZnO semiconductor layer, method for fabricating semiconductor device, and semiconductor device
JP2003298062A (ja) * 2002-03-29 2003-10-17 Sharp Corp 薄膜トランジスタ及びその製造方法
JP2004273732A (ja) 2003-03-07 2004-09-30 Sharp Corp アクティブマトリクス基板およびその製造方法
KR20070116888A (ko) * 2004-03-12 2007-12-11 도꾸리쯔교세이호징 가가꾸 기쥬쯔 신꼬 기꼬 아몰퍼스 산화물 및 박막 트랜지스터
EP2453481B1 (en) * 2004-11-10 2017-01-11 Canon Kabushiki Kaisha Field effect transistor with amorphous oxide
JP5138163B2 (ja) 2004-11-10 2013-02-06 キヤノン株式会社 電界効果型トランジスタ
JP5116225B2 (ja) * 2005-09-06 2013-01-09 キヤノン株式会社 酸化物半導体デバイスの製造方法
JP5078246B2 (ja) 2005-09-29 2012-11-21 株式会社半導体エネルギー研究所 半導体装置、及び半導体装置の作製方法
JP5064747B2 (ja) 2005-09-29 2012-10-31 株式会社半導体エネルギー研究所 半導体装置、電気泳動表示装置、表示モジュール、電子機器、及び半導体装置の作製方法
EP3614442A3 (en) * 2005-09-29 2020-03-25 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device having oxide semiconductor layer and manufactoring method thereof
JP4977478B2 (ja) * 2006-01-21 2012-07-18 三星電子株式会社 ＺｎＯフィルム及びこれを用いたＴＦＴの製造方法
US7977169B2 (en) * 2006-02-15 2011-07-12 Kochi Industrial Promotion Center Semiconductor device including active layer made of zinc oxide with controlled orientations and manufacturing method thereof
US20070287221A1 (en) * 2006-06-12 2007-12-13 Xerox Corporation Fabrication process for crystalline zinc oxide semiconductor layer
JP4609797B2 (ja) * 2006-08-09 2011-01-12 Ｎｅｃ液晶テクノロジー株式会社 薄膜デバイス及びその製造方法
US8129714B2 (en) * 2007-02-16 2012-03-06 Idemitsu Kosan Co., Ltd. Semiconductor, semiconductor device, complementary transistor circuit device
TWI453915B (zh) * 2007-09-10 2014-09-21 Idemitsu Kosan Co Thin film transistor
JP5291928B2 (ja) * 2007-12-26 2013-09-18 株式会社日立製作所 酸化物半導体装置およびその製造方法
KR101496148B1 (ko) 2008-05-15 2015-02-27 삼성전자주식회사 반도체소자 및 그 제조방법
KR101810699B1 (ko) 2009-06-30 2018-01-25 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 제작 방법

Also Published As

Publication number Publication date
TW201137943A (en) 2011-11-01
US20110147739A1 (en) 2011-06-23
US9034104B2 (en) 2015-05-19
WO2011074506A1 (en) 2011-06-23
JP2011146698A (ja) 2011-07-28
TWI555056B (zh) 2016-10-21
KR20120089776A (ko) 2012-08-13
KR101830195B1 (ko) 2018-02-20

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