TWI555056B - 半導體裝置及其製造方法 - Google Patents

半導體裝置及其製造方法 Download PDF

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Publication number
TWI555056B
TWI555056B TW099144235A TW99144235A TWI555056B TW I555056 B TWI555056 B TW I555056B TW 099144235 A TW099144235 A TW 099144235A TW 99144235 A TW99144235 A TW 99144235A TW I555056 B TWI555056 B TW I555056B
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TW
Taiwan
Prior art keywords
oxide semiconductor
semiconductor layer
component oxide
single crystal
crystal region
Prior art date
Application number
TW099144235A
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English (en)
Chinese (zh)
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TW201137943A (en
Inventor
山崎舜平
廣橋拓也
高橋正弘
島津貴志
Original Assignee
半導體能源研究所股份有限公司
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Publication of TW201137943A publication Critical patent/TW201137943A/zh
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Publication of TWI555056B publication Critical patent/TWI555056B/zh

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/22—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using physical deposition, e.g. vacuum deposition or sputtering
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/031—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/6755—Oxide semiconductors, e.g. zinc oxide, copper aluminium oxide or cadmium stannate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/40—Crystalline structures
    • H10D62/405—Orientations of crystalline planes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00—Subject matter not provided for in other groups of this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3402—Deposited materials, e.g. layers characterised by the chemical composition
    • H10P14/3424—Deposited materials, e.g. layers characterised by the chemical composition being Group IIB-VIA materials
    • H10P14/3426—Oxides
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3402—Deposited materials, e.g. layers characterised by the chemical composition
    • H10P14/3434—Deposited materials, e.g. layers characterised by the chemical composition being oxide semiconductor materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/38—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by treatments done after the formation of the materials
    • H10P14/3802—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth

Landscapes

  • Thin Film Transistor (AREA)
  • Liquid Crystal (AREA)
  • Recrystallisation Techniques (AREA)
  • Electroluminescent Light Sources (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
  • Formation Of Insulating Films (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
TW099144235A 2009-12-18 2010-12-16 半導體裝置及其製造方法 TWI555056B (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2009288494 2009-12-18

Publications (2)

Publication Number Publication Date
TW201137943A TW201137943A (en) 2011-11-01
TWI555056B true TWI555056B (zh) 2016-10-21

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
TW099144235A TWI555056B (zh) 2009-12-18 2010-12-16 半導體裝置及其製造方法

Country Status (5)

Country Link
US (1) US9034104B2 (https=)
JP (1) JP5802009B2 (https=)
KR (1) KR101830195B1 (https=)
TW (1) TWI555056B (https=)
WO (1) WO2011074506A1 (https=)

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TWI624878B (zh) 2011-03-11 2018-05-21 半導體能源研究所股份有限公司 半導體裝置的製造方法
US8809854B2 (en) 2011-04-22 2014-08-19 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
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US8716073B2 (en) * 2011-07-22 2014-05-06 Semiconductor Energy Laboratory Co., Ltd. Method for processing oxide semiconductor film and method for manufacturing semiconductor device
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US20130320335A1 (en) * 2012-06-01 2013-12-05 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
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JP6300589B2 (ja) * 2013-04-04 2018-03-28 株式会社半導体エネルギー研究所 半導体装置の作製方法
US20140299873A1 (en) * 2013-04-05 2014-10-09 Semiconductor Energy Laboratory Co., Ltd. Single-crystal oxide semiconductor, thin film, oxide stack, and formation method thereof
JP6429540B2 (ja) 2013-09-13 2018-11-28 株式会社半導体エネルギー研究所 半導体装置の作製方法
JP2015079946A (ja) 2013-09-13 2015-04-23 株式会社半導体エネルギー研究所 半導体装置の作製方法
JP6537264B2 (ja) * 2013-12-12 2019-07-03 株式会社半導体エネルギー研究所 半導体装置
JP6587497B2 (ja) * 2014-10-31 2019-10-09 株式会社半導体エネルギー研究所 半導体装置
JP6725317B2 (ja) 2016-05-19 2020-07-15 株式会社ジャパンディスプレイ 表示装置
CN112005383A (zh) * 2018-03-12 2020-11-27 株式会社半导体能源研究所 金属氧化物以及包含金属氧化物的晶体管
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Also Published As

Publication number Publication date
JP5802009B2 (ja) 2015-10-28
TW201137943A (en) 2011-11-01
US20110147739A1 (en) 2011-06-23
US9034104B2 (en) 2015-05-19
WO2011074506A1 (en) 2011-06-23
JP2011146698A (ja) 2011-07-28
KR20120089776A (ko) 2012-08-13
KR101830195B1 (ko) 2018-02-20

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