JP5788765B2 - 樹脂組成物 - Google Patents
樹脂組成物 Download PDFInfo
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- JP5788765B2 JP5788765B2 JP2011241766A JP2011241766A JP5788765B2 JP 5788765 B2 JP5788765 B2 JP 5788765B2 JP 2011241766 A JP2011241766 A JP 2011241766A JP 2011241766 A JP2011241766 A JP 2011241766A JP 5788765 B2 JP5788765 B2 JP 5788765B2
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- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 239000008119 colloidal silica Substances 0.000 description 1
- 239000013065 commercial product Substances 0.000 description 1
- 229920001577 copolymer Polymers 0.000 description 1
- 229930003836 cresol Natural products 0.000 description 1
- 125000004122 cyclic group Chemical group 0.000 description 1
- 235000010389 delta-tocopherol Nutrition 0.000 description 1
- BTNBMQIHCRIGOU-UHFFFAOYSA-N delta-tocotrienol Natural products CC(=CCCC(=CCCC(=CCCOC1(C)CCc2cc(O)cc(C)c2O1)C)C)C BTNBMQIHCRIGOU-UHFFFAOYSA-N 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- XXBDWLFCJWSEKW-UHFFFAOYSA-N dimethylbenzylamine Chemical compound CN(C)CC1=CC=CC=C1 XXBDWLFCJWSEKW-UHFFFAOYSA-N 0.000 description 1
- 238000002296 dynamic light scattering Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000003487 electrochemical reaction Methods 0.000 description 1
- 125000003700 epoxy group Chemical group 0.000 description 1
- FGYKUFVNYVMTAM-MUUNZHRXSA-N epsilon-Tocopherol Natural products OC1=CC(C)=C2O[C@@](CCC=C(C)CCC=C(C)CCC=C(C)C)(C)CCC2=C1C FGYKUFVNYVMTAM-MUUNZHRXSA-N 0.000 description 1
- NKSJNEHGWDZZQF-UHFFFAOYSA-N ethenyl(trimethoxy)silane Chemical compound CO[Si](OC)(OC)C=C NKSJNEHGWDZZQF-UHFFFAOYSA-N 0.000 description 1
- 239000000284 extract Substances 0.000 description 1
- 238000000605 extraction Methods 0.000 description 1
- 238000005187 foaming Methods 0.000 description 1
- 238000009472 formulation Methods 0.000 description 1
- 229910021485 fumed silica Inorganic materials 0.000 description 1
- ANSXAPJVJOKRDJ-UHFFFAOYSA-N furo[3,4-f][2]benzofuran-1,3,5,7-tetrone Chemical compound C1=C2C(=O)OC(=O)C2=CC2=C1C(=O)OC2=O ANSXAPJVJOKRDJ-UHFFFAOYSA-N 0.000 description 1
- OTXNTMVVOOBZCV-YMCDKREISA-N gamma-Tocotrienol Natural products Oc1c(C)c(C)c2O[C@@](CC/C=C(\CC/C=C(\CC/C=C(\C)/C)/C)/C)(C)CCc2c1 OTXNTMVVOOBZCV-YMCDKREISA-N 0.000 description 1
- 235000010382 gamma-tocopherol Nutrition 0.000 description 1
- VANNPISTIUFMLH-UHFFFAOYSA-N glutaric anhydride Chemical compound O=C1CCCC(=O)O1 VANNPISTIUFMLH-UHFFFAOYSA-N 0.000 description 1
- 235000011187 glycerol Nutrition 0.000 description 1
- FLBJFXNAEMSXGL-UHFFFAOYSA-N het anhydride Chemical compound O=C1OC(=O)C2C1C1(Cl)C(Cl)=C(Cl)C2(Cl)C1(Cl)Cl FLBJFXNAEMSXGL-UHFFFAOYSA-N 0.000 description 1
- 229930195733 hydrocarbon Natural products 0.000 description 1
- 150000002430 hydrocarbons Chemical class 0.000 description 1
- 150000002460 imidazoles Chemical class 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 239000003273 ketjen black Substances 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 238000004949 mass spectrometry Methods 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 125000002496 methyl group Chemical group [H]C([H])([H])* 0.000 description 1
- VYKXQOYUCMREIS-UHFFFAOYSA-N methylhexahydrophthalic anhydride Chemical compound C1CCCC2C(=O)OC(=O)C21C VYKXQOYUCMREIS-UHFFFAOYSA-N 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 239000008188 pellet Substances 0.000 description 1
- 239000013034 phenoxy resin Substances 0.000 description 1
- 229920006287 phenoxy resin Polymers 0.000 description 1
- 239000000049 pigment Substances 0.000 description 1
- 229920000058 polyacrylate Polymers 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 229920001195 polyisoprene Polymers 0.000 description 1
- 229920001451 polypropylene glycol Polymers 0.000 description 1
- 238000004445 quantitative analysis Methods 0.000 description 1
- 229910000077 silane Inorganic materials 0.000 description 1
- 229920002379 silicone rubber Polymers 0.000 description 1
- 239000004945 silicone rubber Substances 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- 229940014800 succinic anhydride Drugs 0.000 description 1
- 238000010998 test method Methods 0.000 description 1
- 239000012085 test solution Substances 0.000 description 1
- 229940068778 tocotrienols Drugs 0.000 description 1
- TUQOTMZNTHZOKS-UHFFFAOYSA-N tributylphosphine Chemical compound CCCCP(CCCC)CCCC TUQOTMZNTHZOKS-UHFFFAOYSA-N 0.000 description 1
- FRGPKMWIYVTFIQ-UHFFFAOYSA-N triethoxy(3-isocyanatopropyl)silane Chemical compound CCO[Si](OCC)(OCC)CCCN=C=O FRGPKMWIYVTFIQ-UHFFFAOYSA-N 0.000 description 1
- VTHOKNTVYKTUPI-UHFFFAOYSA-N triethoxy-[3-(3-triethoxysilylpropyltetrasulfanyl)propyl]silane Chemical compound CCO[Si](OCC)(OCC)CCCSSSSCCC[Si](OCC)(OCC)OCC VTHOKNTVYKTUPI-UHFFFAOYSA-N 0.000 description 1
- SRPWOOOHEPICQU-UHFFFAOYSA-N trimellitic anhydride Chemical compound OC(=O)C1=CC=C2C(=O)OC(=O)C2=C1 SRPWOOOHEPICQU-UHFFFAOYSA-N 0.000 description 1
- IUURMAINMLIZMX-UHFFFAOYSA-N tris(2-nonylphenyl)phosphane Chemical compound CCCCCCCCCC1=CC=CC=C1P(C=1C(=CC=CC=1)CCCCCCCCC)C1=CC=CC=C1CCCCCCCCC IUURMAINMLIZMX-UHFFFAOYSA-N 0.000 description 1
- WXAZIUYTQHYBFW-UHFFFAOYSA-N tris(4-methylphenyl)phosphane Chemical compound C1=CC(C)=CC=C1P(C=1C=CC(C)=CC=1)C1=CC=C(C)C=C1 WXAZIUYTQHYBFW-UHFFFAOYSA-N 0.000 description 1
- DSROZUMNVRXZNO-UHFFFAOYSA-K tris[(1-naphthalen-1-yl-3-phenylnaphthalen-2-yl)oxy]alumane Chemical compound C=1C=CC=CC=1C=1C=C2C=CC=CC2=C(C=2C3=CC=CC=C3C=CC=2)C=1O[Al](OC=1C(=C2C=CC=CC2=CC=1C=1C=CC=CC=1)C=1C2=CC=CC=C2C=CC=1)OC(C(=C1C=CC=CC1=C1)C=2C3=CC=CC=C3C=CC=2)=C1C1=CC=CC=C1 DSROZUMNVRXZNO-UHFFFAOYSA-K 0.000 description 1
- 235000019151 β-tocotrienol Nutrition 0.000 description 1
- 239000011723 β-tocotrienol Substances 0.000 description 1
- FGYKUFVNYVMTAM-WAZJVIJMSA-N β-tocotrienol Chemical compound OC1=CC(C)=C2O[C@@](CC/C=C(C)/CC/C=C(C)/CCC=C(C)C)(C)CCC2=C1C FGYKUFVNYVMTAM-WAZJVIJMSA-N 0.000 description 1
- 239000002478 γ-tocopherol Substances 0.000 description 1
- 235000019150 γ-tocotrienol Nutrition 0.000 description 1
- 239000011722 γ-tocotrienol Substances 0.000 description 1
- 150000003789 δ-tocopherols Chemical class 0.000 description 1
- 235000019144 δ-tocotrienol Nutrition 0.000 description 1
- 239000011729 δ-tocotrienol Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
- H01L23/293—Organic, e.g. plastic
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
- C08G59/00—Polycondensates containing more than one epoxy group per molecule; Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups
- C08G59/18—Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups ; e.g. general methods of curing
- C08G59/40—Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups ; e.g. general methods of curing characterised by the curing agents used
- C08G59/4007—Curing agents not provided for by the groups C08G59/42 - C08G59/66
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
- C08G59/00—Polycondensates containing more than one epoxy group per molecule; Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups
- C08G59/18—Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups ; e.g. general methods of curing
- C08G59/40—Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups ; e.g. general methods of curing characterised by the curing agents used
- C08G59/42—Polycarboxylic acids; Anhydrides, halides or low molecular weight esters thereof
- C08G59/4284—Polycarboxylic acids; Anhydrides, halides or low molecular weight esters thereof together with other curing agents
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
- C08K5/00—Use of organic ingredients
- C08K5/04—Oxygen-containing compounds
- C08K5/15—Heterocyclic compounds having oxygen in the ring
- C08K5/151—Heterocyclic compounds having oxygen in the ring having one oxygen atom in the ring
- C08K5/1545—Six-membered rings
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
- H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
- H01L21/563—Encapsulation of active face of flip-chip device, e.g. underfilling or underencapsulation of flip-chip, encapsulation preform on chip or mounting substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/91—Methods for connecting semiconductor or solid state bodies including different methods provided for in two or more of groups H01L2224/80 - H01L2224/90
- H01L2224/92—Specific sequence of method steps
- H01L2224/921—Connecting a surface with connectors of different types
- H01L2224/9212—Sequential connecting processes
- H01L2224/92122—Sequential connecting processes the first connecting process involving a bump connector
- H01L2224/92125—Sequential connecting processes the first connecting process involving a bump connector the second connecting process involving a layer connector
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Medicinal Chemistry (AREA)
- Polymers & Plastics (AREA)
- Organic Chemistry (AREA)
- Health & Medical Sciences (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
- Epoxy Resins (AREA)
- Compositions Of Macromolecular Compounds (AREA)
Description
〔1〕(A)エポキシ樹脂、
(B)硬化剤、ならびに
(C)一般式(1):
を含有することを特徴とする、樹脂組成物。
〔2〕(C)成分が、5,7,8−トリメチルトコール、5,8−ジメチルトコール、7,8−ジメチルトコール、8−メチルトコール、5,7,8−トリメチルトコトリエノール、5,8−ジメチルトコトリエノール、7,8−ジメチルトコトリエノール、および8−メチルトコトリエノールからなる群より選択される少なくとも1種である、上記〔1〕記載の樹脂組成物。
〔3〕さらに、(D)カップリング剤を含有する、上記〔1〕または〔2〕記載の樹脂組成物。
〔4〕さらに、(E)フィラーを含有する、上記〔1〕〜〔3〕のいずれか記載の樹脂組成物。
〔5〕さらに、(F)ゴム成分を含有する、上記〔1〕〜〔4〕のいずれか記載の樹脂組成物。
〔6〕(C)成分が、樹脂組成物:100質量部に対して、0.01〜10質量部である、上記〔1〕〜〔5〕のいずれか記載の樹脂組成物の硬化物。
〔7〕上記〔1〕〜〔6〕のいずれか記載の樹脂組成物を含む、半導体封止剤。
〔8〕上記〔7〕記載の半導体封止剤を用いて封止されたフリップチップ型半導体素子を有する、半導体装置。
(A)エポキシ樹脂、
(B)硬化剤、ならびに
(C)一般式(1):
を含有することを特徴とする。
表1、表2に示す配合で、樹脂組成物を作製した。作製した樹脂組成物は、すべて液状であった。(C)成分には、和光純薬工業製α−トコフェロールやβ−トコフェロール、α−トコトリエノールを使用した。なお、実施例1〜20、比較例1、2において、(B)成分の酸無水当量、アミン当量またはフェノール当量は、(A)成分のエポキシ当量:1に対して、いずれも0.8であった。
作製した直後の樹脂組成物の粘度(初期粘度、単位:mPa・s)を、東機産業社製E型粘度計(型番:TVE−22H)で測定した。表3、表4に、初期粘度(表には、粘度と記載した)の測定結果を示す。また、樹脂組成物を24時間または48時間、25℃、相対湿度50%で保管した後の粘度を測定し、(24または48時間後の粘度)/(初期粘度)を粘度上昇率(単位:%)とした。表3、表4に、結果を示す。
作製した樹脂組成物を150℃、60分で硬化させた試料の初期重量をW0(g)とし、PCT試験槽(121℃±2℃/湿度100%/2atmの槽)中に20時間置いた後、室温まで冷却して得た試験片の重量をW1(g)とし、下記式で、吸水率(単位:%)を求めた。
吸水率=(W1−W0)/W0 × 100 (%)
表3、表4に、吸水率の評価結果を示す。
離型剤を塗布したガラス板とガラス板との間に、作製した樹脂組成物を挟み、150℃、60分で350μmのシート状に硬化させ、万能試験機((株)島津製作所製 AG−I)を用いて室温での曲げ弾性率を求めた。なお、n=3で測定し、平均値を用いた。また、試験片の膜厚及び幅は、5点測定し、平均値を計算値に用いた。曲げ弾性率は、好ましくは1.0〜10.0GPa、より好ましくは2.0〜8.0GPaである。表3、表4に、曲げ弾性率の評価結果を示す。
作製した樹脂組成物を150℃、60分で硬化させて得た試料を、5mm角程度に粉砕した。硬化塗膜:2.5gにイオン交換水25cm3を加え、PCT試験槽(121℃±2℃/湿度100%/2atmの槽)中に20時間置いた後、室温まで冷却して得た抽出液を試験液とした。上記の手順で得られた抽出液のClイオン濃度を、イオンクロマトグラフを用いて測定した。表3、表4に、抽出Clイオン量の評価結果を示す。
図2に、樹脂組成物の注入性の評価方法を説明する模式図を示す。まず、図2(A)に示すように、基板20上に20μmのギャップ40を設けて、半導体素子の代わりにガラス板30を固定した試験片を作製した。但し、基板20としては、フレキシブル基板の代わりにガラス基板を使用した。次に、この試験片を110℃に設定したホットプレート上に置き、図2(B)に示すように、ガラス板30の一端側に、作製した樹脂組成物10を塗布し、図2(C)に示すように、ギャップ40が樹脂組成物11で満たされるまでの時間を測定し、90秒以下で満たされた場合を「良」とした。表3、表4に、注入性の評価結果を示す。
樹脂組成物の耐イオンマイグレーション性を評価するため、高温高湿バイアス試験(THB試験)を実施した。試験方法は、以下のとおりである。スズメッキ(0.2±0.05μm)された銅配線(パターン幅10μm、線間幅15μm、パターンピッチ25μm)を持つポリイミドテープ基材上に、作製した樹脂組成物を20μm厚みで塗布し、150℃で30分間処理し、封止剤を硬化させて試験片を作製した。この試験片についてイオンマイグレーション評価システム(エスペック社製)を用いて、110℃/湿度85%の条件下で、DC60Vの電圧を印加したときの抵抗値の変化を測定し、抵抗値が1.00×107Ωを下回った時点を閾値として、銅配線のマイグレーションを評価した(単位:時間)。抵抗値が閾値を下回らなかったものについては、1000時間を越えた時点で試験終了とした。表3、表4に、耐マイグレーション性の評価結果を示す。図3、図4に、耐マイグレーション性評価後の写真を示す。写真にスケールはついていないが、上記のようにパターン幅10μm、線間幅15μmの銅配線である。図3は実施例4、図4は比較例2の写真である。
上記耐マイグレーション性の評価を行った試験片を、光学顕微鏡オリンパス製(型番:STM6)を用いて、50倍の対物レンズで観察した。配線の腐食が配線幅の1/3に満たないものを「○」、1/3以上のものを「×」とした。
2 陽極
3 陰極
10、11 樹脂組成物
20 基板
30 ガラス板
40 ギャップ
Claims (7)
- (A)エポキシ樹脂、
(B)硬化剤、ならびに
(C)一般式(1):
を含有する樹脂組成物を含む、半導体封止剤。 - (C)成分が、5,7,8−トリメチルトコール、5,8−ジメチルトコール、7,8−ジメチルトコール、8−メチルトコール、5,7,8−トリメチルトコトリエノール、5,8−ジメチルトコトリエノール、7,8−ジメチルトコトリエノール、および8−メチルトコトリエノールからなる群より選択される少なくとも1種である、請求項1記載の半導体封止剤。
- さらに、(D)カップリング剤を含有する、請求項1または2記載の半導体封止剤。
- さらに、(E)フィラーを含有する、請求項1〜3のいずれか1項記載の半導体封止剤。
- さらに、(F)ゴム成分を含有する、請求項1〜4のいずれか1項記載の半導体封止剤。
- (C)成分が、樹脂組成物:100質量部に対して、0.01〜10質量部である、請求項1〜5のいずれか1項記載の半導体封止剤の硬化物。
- 請求項1〜5のいずれか1項記載の半導体封止剤を用いて封止されたフリップチップ型半導体素子を有する、半導体装置。
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CN201280044064.0A CN103814056B (zh) | 2011-11-03 | 2012-10-01 | 树脂组合物 |
KR1020147007897A KR101927567B1 (ko) | 2011-11-03 | 2012-10-01 | 수지 조성물 |
PCT/JP2012/075303 WO2013065433A1 (ja) | 2011-11-03 | 2012-10-01 | 樹脂組成物 |
TW101139198A TWI543999B (zh) | 2011-11-03 | 2012-10-24 | 液狀半導體密封劑、其硬化物及半導體裝置 |
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