JP5787382B2 - マイクロリソグラフィ投影露光装置の照明系 - Google Patents

マイクロリソグラフィ投影露光装置の照明系 Download PDF

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JP5787382B2
JP5787382B2 JP2013555762A JP2013555762A JP5787382B2 JP 5787382 B2 JP5787382 B2 JP 5787382B2 JP 2013555762 A JP2013555762 A JP 2013555762A JP 2013555762 A JP2013555762 A JP 2013555762A JP 5787382 B2 JP5787382 B2 JP 5787382B2
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imaging system
optical element
plane
light
optical imaging
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Japanese (ja)
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JP2014511574A5 (enExample
JP2014511574A (ja
Inventor
ミハエル パトラ
ミハエル パトラ
マルクス デギュンター
マルクス デギュンター
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カール・ツァイス・エスエムティー・ゲーエムベーハー
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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058—Mask illumination systems
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058—Mask illumination systems
    • G03F7/70091—Illumination settings, i.e. intensity distribution in the pupil plane or angular distribution in the field plane; On-axis or off-axis settings, e.g. annular, dipole or quadrupole settings; Partial coherence control, i.e. sigma or numerical aperture [NA]
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058—Mask illumination systems
    • G03F7/7015—Details of optical elements
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058—Mask illumination systems
    • G03F7/7015—Details of optical elements
    • G03F7/70158—Diffractive optical elements

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Microscoopes, Condenser (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Lenses (AREA)
JP2013555762A 2011-02-28 2011-02-28 マイクロリソグラフィ投影露光装置の照明系 Active JP5787382B2 (ja)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/EP2011/000960 WO2012116710A1 (en) 2011-02-28 2011-02-28 Illumination system of a microlithographic projection exposure apparatus

Publications (3)

Publication Number Publication Date
JP2014511574A JP2014511574A (ja) 2014-05-15
JP2014511574A5 JP2014511574A5 (enExample) 2014-06-26
JP5787382B2 true JP5787382B2 (ja) 2015-09-30

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ID=44625330

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JP2013555762A Active JP5787382B2 (ja) 2011-02-28 2011-02-28 マイクロリソグラフィ投影露光装置の照明系

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Country Link
US (1) US9280055B2 (enExample)
JP (1) JP5787382B2 (enExample)
KR (1) KR101758958B1 (enExample)
TW (1) TWI502285B (enExample)
WO (1) WO2012116710A1 (enExample)

Family Cites Families (24)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2540744B2 (ja) * 1987-10-08 1996-10-09 株式会社ニコン レ―ザを用いた露光用照明装置
US5724122A (en) * 1995-05-24 1998-03-03 Svg Lithography Systems, Inc. Illumination system having spatially separate vertical and horizontal image planes for use in photolithography
JP3532742B2 (ja) * 1997-08-29 2004-05-31 株式会社東芝 Ｘ線リソグラフィ装置およびｘ線露光方法
US7009140B2 (en) 2001-04-18 2006-03-07 Cymer, Inc. Laser thin film poly-silicon annealing optical system
TW544758B (en) * 2001-05-23 2003-08-01 Nikon Corp Lighting optical device, exposure system, and production method of micro device
JP4401060B2 (ja) 2001-06-01 2010-01-20 エーエスエムエル ネザーランズ ビー．ブイ． リトグラフ装置、およびデバイス製造方法
KR100480620B1 (ko) 2002-09-19 2005-03-31 삼성전자주식회사 마이크로 미러 어레이를 구비한 노광 장치 및 이를 이용한노광 방법
EP1469347A1 (en) * 2003-04-17 2004-10-20 ASML Netherlands B.V. Lithographic apparatus and device manufacturing method
JP4717813B2 (ja) 2003-09-12 2011-07-06 カール・ツァイス・エスエムティー・ゲーエムベーハー マイクロリソグラフィ投影露光設備のための照明系
JP2005150541A (ja) * 2003-11-18 2005-06-09 Nikon Corp 照明光学装置、露光装置および露光方法
JP2005183736A (ja) * 2003-12-19 2005-07-07 Nikon Corp 露光方法及び装置、並びにデバイス製造方法
WO2005076083A1 (en) * 2004-02-07 2005-08-18 Carl Zeiss Smt Ag Illumination system for a microlithographic projection exposure apparatus
JP4497949B2 (ja) * 2004-02-12 2010-07-07 キヤノン株式会社 露光装置
US20060087634A1 (en) 2004-10-25 2006-04-27 Brown Jay M Dynamic illumination uniformity and shape control for lithography
US7851725B2 (en) 2004-11-17 2010-12-14 Metal Improvement Company Llc Active beam delivery system with image relay
JP5030944B2 (ja) * 2005-04-26 2012-09-19 カール・ツァイス・エスエムティー・ゲーエムベーハー マイクロリソグラフィ露光装置のための照明システム
JP4701030B2 (ja) * 2005-07-22 2011-06-15 キヤノン株式会社 露光装置、露光パラメータを設定する設定方法、露光方法、デバイス製造方法及びプログラム
US7352789B2 (en) 2006-01-12 2008-04-01 Semiconductor Energy Laboratory Co., Ltd. Laser light irradiation apparatus and laser light irradiation method
TWI444779B (zh) * 2007-01-30 2014-07-11 Zeiss Carl Smt Gmbh 微影蝕刻的投影曝光儀器之照明系統
JP2008270571A (ja) * 2007-04-20 2008-11-06 Canon Inc 照明光学装置、引き回し光学系、露光装置及びデバイス製造方法
JP4950795B2 (ja) * 2007-07-30 2012-06-13 キヤノン株式会社 露光装置、デバイス製造方法及び補正方法
EP2146248B1 (en) 2008-07-16 2012-08-29 Carl Zeiss SMT GmbH Illumination system of a microlithographic projection exposure apparatus
JP5608233B2 (ja) * 2009-07-31 2014-10-15 カール・ツァイス・エスエムティー・ゲーエムベーハー 光学ビーム偏向要素及び調節方法
KR101528397B1 (ko) * 2010-12-28 2015-06-11 칼 짜이스 에스엠티 게엠베하 마이크로리소그래피 투영 노광 장치의 조명 시스템

Also Published As

Publication number Publication date
KR101758958B1 (ko) 2017-07-17
WO2012116710A1 (en) 2012-09-07
US20130308115A1 (en) 2013-11-21
US9280055B2 (en) 2016-03-08
TW201248335A (en) 2012-12-01
JP2014511574A (ja) 2014-05-15
TWI502285B (zh) 2015-10-01
KR20140021549A (ko) 2014-02-20

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