KR101758958B1 - 마이크로리소그래피 투영 노광 장치의 조명 시스템 - Google Patents
마이크로리소그래피 투영 노광 장치의 조명 시스템 Download PDFInfo
- Publication number
- KR101758958B1 KR101758958B1 KR1020137022790A KR20137022790A KR101758958B1 KR 101758958 B1 KR101758958 B1 KR 101758958B1 KR 1020137022790 A KR1020137022790 A KR 1020137022790A KR 20137022790 A KR20137022790 A KR 20137022790A KR 101758958 B1 KR101758958 B1 KR 101758958B1
- Authority
- KR
- South Korea
- Prior art keywords
- imaging system
- light
- optical element
- optical imaging
- diffractive optical
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 238000005286 illumination Methods 0.000 title claims abstract description 58
- 230000003287 optical effect Effects 0.000 claims abstract description 135
- 238000012634 optical imaging Methods 0.000 claims abstract description 68
- 210000001747 pupil Anatomy 0.000 claims abstract description 36
- 238000006073 displacement reaction Methods 0.000 claims description 10
- 238000000034 method Methods 0.000 claims description 10
- 230000007246 mechanism Effects 0.000 claims description 6
- 230000008859 change Effects 0.000 abstract description 18
- 230000000694 effects Effects 0.000 abstract description 16
- 230000001419 dependent effect Effects 0.000 abstract description 5
- 229920002120 photoresistant polymer Polymers 0.000 description 9
- 239000000758 substrate Substances 0.000 description 8
- 238000003384 imaging method Methods 0.000 description 6
- 230000004907 flux Effects 0.000 description 5
- 238000004519 manufacturing process Methods 0.000 description 5
- 230000008569 process Effects 0.000 description 4
- 230000005540 biological transmission Effects 0.000 description 3
- 238000001393 microlithography Methods 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 239000010409 thin film Substances 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 238000003491 array Methods 0.000 description 2
- 238000013461 design Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000005224 laser annealing Methods 0.000 description 2
- 230000033001 locomotion Effects 0.000 description 2
- 230000005855 radiation Effects 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 238000012546 transfer Methods 0.000 description 2
- 230000003679 aging effect Effects 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 230000000295 complement effect Effects 0.000 description 1
- 230000021615 conjugation Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 230000018109 developmental process Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000005670 electromagnetic radiation Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 239000010408 film Substances 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 238000001459 lithography Methods 0.000 description 1
- 230000007774 longterm Effects 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000005297 material degradation process Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- 230000006641 stabilisation Effects 0.000 description 1
- 238000011105 stabilization Methods 0.000 description 1
Images
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70058—Mask illumination systems
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70058—Mask illumination systems
- G03F7/7015—Details of optical elements
- G03F7/70158—Diffractive optical elements
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Microscoopes, Condenser (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Lenses (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| PCT/EP2011/000960 WO2012116710A1 (en) | 2011-02-28 | 2011-02-28 | Illumination system of a microlithographic projection exposure apparatus |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| KR20140021549A KR20140021549A (ko) | 2014-02-20 |
| KR101758958B1 true KR101758958B1 (ko) | 2017-07-17 |
Family
ID=44625330
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1020137022790A Active KR101758958B1 (ko) | 2011-02-28 | 2011-02-28 | 마이크로리소그래피 투영 노광 장치의 조명 시스템 |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US9280055B2 (enExample) |
| JP (1) | JP5787382B2 (enExample) |
| KR (1) | KR101758958B1 (enExample) |
| TW (1) | TWI502285B (enExample) |
| WO (1) | WO2012116710A1 (enExample) |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20080259450A1 (en) * | 2007-04-20 | 2008-10-23 | Canon Kabushiki Kaisha | Illumination optical apparatus, relay optical system, exposure apparatus, and device manufacturing method |
| WO2011012148A1 (en) * | 2009-07-31 | 2011-02-03 | Carl Zeiss Smt Gmbh | Optical beam deflecting element and method of adjustment |
Family Cites Families (22)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2540744B2 (ja) * | 1987-10-08 | 1996-10-09 | 株式会社ニコン | レ―ザを用いた露光用照明装置 |
| US5724122A (en) * | 1995-05-24 | 1998-03-03 | Svg Lithography Systems, Inc. | Illumination system having spatially separate vertical and horizontal image planes for use in photolithography |
| JP3532742B2 (ja) * | 1997-08-29 | 2004-05-31 | 株式会社東芝 | X線リソグラフィ装置およびx線露光方法 |
| US7009140B2 (en) | 2001-04-18 | 2006-03-07 | Cymer, Inc. | Laser thin film poly-silicon annealing optical system |
| TW544758B (en) * | 2001-05-23 | 2003-08-01 | Nikon Corp | Lighting optical device, exposure system, and production method of micro device |
| JP4401060B2 (ja) | 2001-06-01 | 2010-01-20 | エーエスエムエル ネザーランズ ビー.ブイ. | リトグラフ装置、およびデバイス製造方法 |
| KR100480620B1 (ko) | 2002-09-19 | 2005-03-31 | 삼성전자주식회사 | 마이크로 미러 어레이를 구비한 노광 장치 및 이를 이용한노광 방법 |
| EP1469347A1 (en) * | 2003-04-17 | 2004-10-20 | ASML Netherlands B.V. | Lithographic apparatus and device manufacturing method |
| JP4717813B2 (ja) | 2003-09-12 | 2011-07-06 | カール・ツァイス・エスエムティー・ゲーエムベーハー | マイクロリソグラフィ投影露光設備のための照明系 |
| JP2005150541A (ja) * | 2003-11-18 | 2005-06-09 | Nikon Corp | 照明光学装置、露光装置および露光方法 |
| JP2005183736A (ja) * | 2003-12-19 | 2005-07-07 | Nikon Corp | 露光方法及び装置、並びにデバイス製造方法 |
| WO2005076083A1 (en) * | 2004-02-07 | 2005-08-18 | Carl Zeiss Smt Ag | Illumination system for a microlithographic projection exposure apparatus |
| JP4497949B2 (ja) * | 2004-02-12 | 2010-07-07 | キヤノン株式会社 | 露光装置 |
| US20060087634A1 (en) | 2004-10-25 | 2006-04-27 | Brown Jay M | Dynamic illumination uniformity and shape control for lithography |
| US7851725B2 (en) | 2004-11-17 | 2010-12-14 | Metal Improvement Company Llc | Active beam delivery system with image relay |
| JP5030944B2 (ja) * | 2005-04-26 | 2012-09-19 | カール・ツァイス・エスエムティー・ゲーエムベーハー | マイクロリソグラフィ露光装置のための照明システム |
| JP4701030B2 (ja) * | 2005-07-22 | 2011-06-15 | キヤノン株式会社 | 露光装置、露光パラメータを設定する設定方法、露光方法、デバイス製造方法及びプログラム |
| US7352789B2 (en) | 2006-01-12 | 2008-04-01 | Semiconductor Energy Laboratory Co., Ltd. | Laser light irradiation apparatus and laser light irradiation method |
| TWI444779B (zh) * | 2007-01-30 | 2014-07-11 | Zeiss Carl Smt Gmbh | 微影蝕刻的投影曝光儀器之照明系統 |
| JP4950795B2 (ja) * | 2007-07-30 | 2012-06-13 | キヤノン株式会社 | 露光装置、デバイス製造方法及び補正方法 |
| EP2146248B1 (en) | 2008-07-16 | 2012-08-29 | Carl Zeiss SMT GmbH | Illumination system of a microlithographic projection exposure apparatus |
| KR101528397B1 (ko) * | 2010-12-28 | 2015-06-11 | 칼 짜이스 에스엠티 게엠베하 | 마이크로리소그래피 투영 노광 장치의 조명 시스템 |
-
2011
- 2011-02-28 JP JP2013555762A patent/JP5787382B2/ja active Active
- 2011-02-28 KR KR1020137022790A patent/KR101758958B1/ko active Active
- 2011-02-28 WO PCT/EP2011/000960 patent/WO2012116710A1/en not_active Ceased
-
2012
- 2012-02-24 TW TW101106160A patent/TWI502285B/zh active
-
2013
- 2013-07-26 US US13/952,179 patent/US9280055B2/en active Active
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20080259450A1 (en) * | 2007-04-20 | 2008-10-23 | Canon Kabushiki Kaisha | Illumination optical apparatus, relay optical system, exposure apparatus, and device manufacturing method |
| WO2011012148A1 (en) * | 2009-07-31 | 2011-02-03 | Carl Zeiss Smt Gmbh | Optical beam deflecting element and method of adjustment |
Also Published As
| Publication number | Publication date |
|---|---|
| WO2012116710A1 (en) | 2012-09-07 |
| US20130308115A1 (en) | 2013-11-21 |
| JP5787382B2 (ja) | 2015-09-30 |
| US9280055B2 (en) | 2016-03-08 |
| TW201248335A (en) | 2012-12-01 |
| JP2014511574A (ja) | 2014-05-15 |
| TWI502285B (zh) | 2015-10-01 |
| KR20140021549A (ko) | 2014-02-20 |
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| PA0105 | International application |
Patent event date: 20130828 Patent event code: PA01051R01D Comment text: International Patent Application |
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| PG1501 | Laying open of application | ||
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| PA0201 | Request for examination |
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Comment text: Notification of reason for refusal Patent event date: 20160917 Patent event code: PE09021S01D |
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Patent event code: PE07011S01D Comment text: Decision to Grant Registration Patent event date: 20170523 |
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| GRNT | Written decision to grant | ||
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