JP5773735B2 - 露光装置、および、デバイス製造方法 - Google Patents

露光装置、および、デバイス製造方法 Download PDF

Info

Publication number
JP5773735B2
JP5773735B2 JP2011104488A JP2011104488A JP5773735B2 JP 5773735 B2 JP5773735 B2 JP 5773735B2 JP 2011104488 A JP2011104488 A JP 2011104488A JP 2011104488 A JP2011104488 A JP 2011104488A JP 5773735 B2 JP5773735 B2 JP 5773735B2
Authority
JP
Japan
Prior art keywords
mark
substrate
original
light
stage
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
JP2011104488A
Other languages
English (en)
Japanese (ja)
Other versions
JP2012235065A (ja
JP2012235065A5 (cg-RX-API-DMAC7.html
Inventor
友則 塚原
友則 塚原
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Canon Inc
Original Assignee
Canon Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Canon Inc filed Critical Canon Inc
Priority to JP2011104488A priority Critical patent/JP5773735B2/ja
Publication of JP2012235065A publication Critical patent/JP2012235065A/ja
Publication of JP2012235065A5 publication Critical patent/JP2012235065A5/ja
Application granted granted Critical
Publication of JP5773735B2 publication Critical patent/JP5773735B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Landscapes

  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
JP2011104488A 2011-05-09 2011-05-09 露光装置、および、デバイス製造方法 Active JP5773735B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2011104488A JP5773735B2 (ja) 2011-05-09 2011-05-09 露光装置、および、デバイス製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2011104488A JP5773735B2 (ja) 2011-05-09 2011-05-09 露光装置、および、デバイス製造方法

Publications (3)

Publication Number Publication Date
JP2012235065A JP2012235065A (ja) 2012-11-29
JP2012235065A5 JP2012235065A5 (cg-RX-API-DMAC7.html) 2014-07-03
JP5773735B2 true JP5773735B2 (ja) 2015-09-02

Family

ID=47435086

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2011104488A Active JP5773735B2 (ja) 2011-05-09 2011-05-09 露光装置、および、デバイス製造方法

Country Status (1)

Country Link
JP (1) JP5773735B2 (cg-RX-API-DMAC7.html)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6685821B2 (ja) * 2016-04-25 2020-04-22 キヤノン株式会社 計測装置、インプリント装置、物品の製造方法、光量決定方法、及び、光量調整方法
JP7361599B2 (ja) * 2019-12-26 2023-10-16 キヤノン株式会社 露光装置および物品製造方法

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3450343B2 (ja) * 1992-01-06 2003-09-22 キヤノン株式会社 投影露光装置及びそれを用いた半導体素子の製造方法
JP3252526B2 (ja) * 1993-04-09 2002-02-04 キヤノン株式会社 位置検出装置及びそれを用いた半導体素子の製造方法
JP2000338683A (ja) * 1999-05-28 2000-12-08 Nikon Corp 露光装置及び露光方法
JP2001044098A (ja) * 1999-07-26 2001-02-16 Nikon Corp 露光装置、その露光装置における位置検出方法
JP2009065061A (ja) * 2007-09-07 2009-03-26 Canon Inc 露光装置及び露光方法、デバイス製造方法
JP5457767B2 (ja) * 2009-09-08 2014-04-02 キヤノン株式会社 露光装置およびデバイス製造方法

Also Published As

Publication number Publication date
JP2012235065A (ja) 2012-11-29

Similar Documents

Publication Publication Date Title
US8472009B2 (en) Exposure apparatus and device manufacturing method
KR101642552B1 (ko) 계측 방법, 노광 방법 및 장치
TWI534558B (zh) 偵測裝置、曝光設備及使用其之裝置製造方法
JP7147738B2 (ja) 計測装置及び計測方法、並びに露光装置
TWI575568B (zh) 曝光方法、曝光裝置和物品製造方法
JP6261207B2 (ja) 露光装置、露光方法、それらを用いたデバイスの製造方法
JP6463935B2 (ja) 露光装置、露光方法、およびデバイス製造方法
JP2009071103A (ja) 露光システムおよび半導体装置の製造方法
US10488764B2 (en) Lithography apparatus, lithography method, and method of manufacturing article
KR20140016821A (ko) 노광 방법, 노광 장치, 및 디바이스의 제조 방법
JP5773735B2 (ja) 露光装置、および、デバイス製造方法
JP6139870B2 (ja) 露光方法、露光装置および物品の製造方法
JP6727554B2 (ja) 露光装置、フラットパネルディスプレイの製造方法、デバイス製造方法、及び露光方法
KR101879263B1 (ko) 노광장치, 노광방법 및 디바이스 제조방법
JP6415235B2 (ja) 計測装置、計測方法、リソグラフィ装置、および物品の製造方法
JP6202993B2 (ja) 露光装置、露光方法、およびデバイスの製造方法
KR100576518B1 (ko) 노광장치 및 그를 이용한 반도체 소자의 노광 방법
JP7336343B2 (ja) 露光装置、露光方法、および物品の製造方法
JP6053316B2 (ja) リソグラフィー装置、および、物品製造方法
JPH10116781A (ja) 面位置検出装置及びそれを用いたデバイスの製造方法
JP2010251409A (ja) 露光方法、露光装置及びデバイス製造方法
JP2016062921A (ja) 露光装置およびデバイス製造方法
JP2008235457A (ja) 露光装置
JP2002141262A (ja) 表面状態の検出方法及びマイクロデバイスの製造方法
JP2016149405A (ja) 計測装置、露光装置、デバイス製造方法、及び計測方法

Legal Events

Date Code Title Description
A521 Written amendment

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20140507

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20140507

A521 Written amendment

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20140508

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20150223

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20150303

A521 Written amendment

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20150501

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20150602

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20150630

R151 Written notification of patent or utility model registration

Ref document number: 5773735

Country of ref document: JP

Free format text: JAPANESE INTERMEDIATE CODE: R151