JP5770905B1 - 窒化ガリウム自立基板、発光素子及びそれらの製造方法 - Google Patents

窒化ガリウム自立基板、発光素子及びそれらの製造方法 Download PDF

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JP5770905B1
JP5770905B1 JP2014199217A JP2014199217A JP5770905B1 JP 5770905 B1 JP5770905 B1 JP 5770905B1 JP 2014199217 A JP2014199217 A JP 2014199217A JP 2014199217 A JP2014199217 A JP 2014199217A JP 5770905 B1 JP5770905 B1 JP 5770905B1
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gallium nitride
standing substrate
substrate
single crystal
free
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JP2014199217A
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JP2015199635A (ja
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守道 渡邊
守道 渡邊
吉川　潤
潤 吉川
七瀧　努
七瀧　　努
克宏 今井
克宏 今井
智彦 杉山
智彦 杉山
隆史 吉野
隆史 吉野
武内　幸久
幸久 武内
佐藤　圭
圭 佐藤
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NGK Insulators Ltd
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NGK Insulators Ltd
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Priority claimed from PCT/JP2014/064388 external-priority patent/WO2014192911A1/ja
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Priority to JP2014199217A priority Critical patent/JP5770905B1/ja
Priority to TW104120459A priority patent/TW201627544A/zh
Priority to TW105136228A priority patent/TWI662163B/zh
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  • Crystals, And After-Treatments Of Crystals (AREA)
  • Led Devices (AREA)
  • Chemical Vapour Deposition (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
JP2014199217A 2013-12-18 2014-09-29 窒化ガリウム自立基板、発光素子及びそれらの製造方法 Expired - Fee Related JP5770905B1 (ja)

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JP2014199217A JP5770905B1 (ja) 2013-12-18 2014-09-29 窒化ガリウム自立基板、発光素子及びそれらの製造方法
TW104120459A TW201627544A (zh) 2013-12-18 2015-06-25 獨立式氮化鎵基板、發光元件及此等之製造方法
TW105136228A TWI662163B (zh) 2013-12-18 2015-06-25 獨立式氮化鎵基板、發光元件及此等之製造方法

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JP2013260868 2013-12-18
JP2013260868 2013-12-18
JP2014071342 2014-03-31
JP2014071342 2014-03-31
PCT/JP2014/064388 WO2014192911A1 (ja) 2013-05-31 2014-05-30 窒化ガリウム自立基板、発光素子及びそれらの製造方法
WOPCT/JP2014/064388 2014-05-30
JP2014199217A JP5770905B1 (ja) 2013-12-18 2014-09-29 窒化ガリウム自立基板、発光素子及びそれらの製造方法

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JP2015199635A JP2015199635A (ja) 2015-11-12

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JP2015126714A Pending JP2016001738A (ja) 2013-12-18 2015-06-24 窒化ガリウム自立基板、発光素子及びそれらの製造方法

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Cited By (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPWO2015093335A1 (ja) * 2013-12-18 2017-03-16 日本碍子株式会社 発光素子用複合基板及びその製造方法
WO2017057272A1 (ja) * 2015-09-30 2017-04-06 日本碍子株式会社 エピタキシャル成長用配向アルミナ基板
WO2017057271A1 (ja) * 2015-09-30 2017-04-06 日本碍子株式会社 エピタキシャル成長用配向アルミナ基板
JPWO2017086026A1 (ja) * 2015-11-16 2018-08-30 日本碍子株式会社 配向焼結体の製法
US10249494B2 (en) 2015-01-29 2019-04-02 Ngk Insulators, Ltd. Free-standing substrate, function element and method for producing same
DE112017007792T5 (de) 2017-08-24 2020-05-14 Ngk Insulators, Ltd. Schicht aus einem Nitrid eines Elements der Gruppe 13, selbsttragendes Substrat und funtionelles Element
US10707373B2 (en) 2016-02-25 2020-07-07 Ngk Insulators, Ltd. Polycrystalline gallium nitride self-supported substrate and light emitting element using same
US10734548B2 (en) 2016-02-25 2020-08-04 Ngk Insulators, Ltd. Free-standing substrate comprising polycrystalline group 13 element nitride and light-emitting element using same
US11011678B2 (en) 2017-08-24 2021-05-18 Ngk Insulators, Ltd. Group 13 element nitride layer, free-standing substrate and functional element
US11309455B2 (en) 2017-08-24 2022-04-19 Ngk Insulators, Ltd. Group 13 element nitride layer, free-standing substrate and functional element
CN114651092A (zh) * 2019-11-21 2022-06-21 日本碍子株式会社 13族元素氮化物结晶层、自立基板及功能元件
US11555257B2 (en) 2017-08-24 2023-01-17 Ngk Insulators, Ltd. Group 13 element nitride layer, free-standing substrate and functional element
US11611017B2 (en) 2017-08-24 2023-03-21 Ngk Insulators, Ltd. Group 13 element nitride layer, free-standing substrate and functional element

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2017169622A1 (ja) * 2016-03-29 2017-10-05 日本碍子株式会社 自立基板および積層体
JP6639317B2 (ja) * 2016-04-21 2020-02-05 日本碍子株式会社 １３族元素窒化物結晶の製造方法および種結晶基板
JP6846913B2 (ja) * 2016-11-11 2021-03-24 日本碍子株式会社 広波長域発光素子および広波長域発光素子の作製方法
TWI621249B (zh) 2017-03-27 2018-04-11 英屬開曼群島商錼創科技股份有限公司 微型發光二極體及顯示面板
TWI632673B (zh) * 2017-07-11 2018-08-11 錼創科技股份有限公司 微型發光元件與顯示裝置
JP7185123B2 (ja) * 2017-12-26 2022-12-07 日亜化学工業株式会社 光学部材及び発光装置
JP7147644B2 (ja) * 2019-03-18 2022-10-05 豊田合成株式会社 Ｉｉｉ族窒化物半導体の製造方法
CN111607825A (zh) * 2020-06-02 2020-09-01 无锡吴越半导体有限公司 衬底、基于所述衬底的自支撑GaN单晶及其制备方法
CN116364819B (zh) * 2023-05-31 2023-12-15 江西兆驰半导体有限公司 发光二极管外延片及其制备方法、led

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3410863B2 (ja) * 1995-07-12 2003-05-26 株式会社東芝 化合物半導体装置及び化合物半導体発光装置
JP3864870B2 (ja) * 2001-09-19 2007-01-10 住友電気工業株式会社 単結晶窒化ガリウム基板およびその成長方法並びにその製造方法
US7221037B2 (en) * 2003-01-20 2007-05-22 Matsushita Electric Industrial Co., Ltd. Method of manufacturing group III nitride substrate and semiconductor device
JP2004359495A (ja) * 2003-06-04 2004-12-24 Ngk Insulators Ltd エピタキシャル膜用アルミナ基板
JP4341702B2 (ja) * 2007-06-21 2009-10-07 住友電気工業株式会社 Ｉｉｉ族窒化物系半導体発光素子
JP4981602B2 (ja) * 2007-09-25 2012-07-25 パナソニック株式会社 窒化ガリウム基板の製造方法
JP2009091175A (ja) * 2007-10-04 2009-04-30 Sumitomo Electric Ind Ltd ＧａＮエピタキシャル基板、半導体デバイス、ＧａＮエピタキシャル基板及び半導体デバイスの製造方法
US9012253B2 (en) * 2009-12-16 2015-04-21 Micron Technology, Inc. Gallium nitride wafer substrate for solid state lighting devices, and associated systems and methods

Cited By (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPWO2015093335A1 (ja) * 2013-12-18 2017-03-16 日本碍子株式会社 発光素子用複合基板及びその製造方法
US10249494B2 (en) 2015-01-29 2019-04-02 Ngk Insulators, Ltd. Free-standing substrate, function element and method for producing same
JPWO2017057271A1 (ja) * 2015-09-30 2018-07-19 日本碍子株式会社 エピタキシャル成長用配向アルミナ基板
JPWO2017057272A1 (ja) * 2015-09-30 2018-07-26 日本碍子株式会社 エピタキシャル成長用配向アルミナ基板
WO2017057271A1 (ja) * 2015-09-30 2017-04-06 日本碍子株式会社 エピタキシャル成長用配向アルミナ基板
US10435815B2 (en) 2015-09-30 2019-10-08 Ngk Insulators, Ltd. Oriented alumina substrate for epitaxial growth
US10435816B2 (en) 2015-09-30 2019-10-08 Ngk Insulators, Ltd. Oriented alumina substrate for epitaxial growth
WO2017057272A1 (ja) * 2015-09-30 2017-04-06 日本碍子株式会社 エピタキシャル成長用配向アルミナ基板
US10774002B2 (en) 2015-11-16 2020-09-15 Ngk Insulators, Ltd. Method for producing oriented sintered body
JPWO2017086026A1 (ja) * 2015-11-16 2018-08-30 日本碍子株式会社 配向焼結体の製法
US10804432B2 (en) 2016-02-25 2020-10-13 Ngk Insulators, Ltd. Free-standing substrate comprising polycrystalline group 13 element nitride and light-emitting element using same
US10707373B2 (en) 2016-02-25 2020-07-07 Ngk Insulators, Ltd. Polycrystalline gallium nitride self-supported substrate and light emitting element using same
US10734548B2 (en) 2016-02-25 2020-08-04 Ngk Insulators, Ltd. Free-standing substrate comprising polycrystalline group 13 element nitride and light-emitting element using same
DE112017007796T5 (de) 2017-08-24 2020-06-10 Ngk Insulators, Ltd. Schicht aus einem nitrid eines elements der gruppe 13, selbsttragendes substrat und fuktionelles element
DE112017007792T5 (de) 2017-08-24 2020-05-14 Ngk Insulators, Ltd. Schicht aus einem Nitrid eines Elements der Gruppe 13, selbsttragendes Substrat und funtionelles Element
US11011678B2 (en) 2017-08-24 2021-05-18 Ngk Insulators, Ltd. Group 13 element nitride layer, free-standing substrate and functional element
US11088299B2 (en) 2017-08-24 2021-08-10 Ngk Insulators, Ltd. Group 13 element nitride layer, free-standing substrate and functional element
US11309455B2 (en) 2017-08-24 2022-04-19 Ngk Insulators, Ltd. Group 13 element nitride layer, free-standing substrate and functional element
US11555257B2 (en) 2017-08-24 2023-01-17 Ngk Insulators, Ltd. Group 13 element nitride layer, free-standing substrate and functional element
US11611017B2 (en) 2017-08-24 2023-03-21 Ngk Insulators, Ltd. Group 13 element nitride layer, free-standing substrate and functional element
CN114651092A (zh) * 2019-11-21 2022-06-21 日本碍子株式会社 13族元素氮化物结晶层、自立基板及功能元件

Also Published As

Publication number Publication date
TWI662163B (zh) 2019-06-11
JP2015199635A (ja) 2015-11-12
TW201627544A (zh) 2016-08-01
JP2016001738A (ja) 2016-01-07
TWI563133B (enExample) 2016-12-21
TW201708635A (zh) 2017-03-01

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