JP5757541B2 - オン抵抗値が改善された半導体デバイス - Google Patents
オン抵抗値が改善された半導体デバイス Download PDFInfo
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- JP5757541B2 JP5757541B2 JP2013259245A JP2013259245A JP5757541B2 JP 5757541 B2 JP5757541 B2 JP 5757541B2 JP 2013259245 A JP2013259245 A JP 2013259245A JP 2013259245 A JP2013259245 A JP 2013259245A JP 5757541 B2 JP5757541 B2 JP 5757541B2
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- 239000004065 semiconductor Substances 0.000 title claims description 21
- 239000000758 substrate Substances 0.000 claims description 60
- 210000000746 body region Anatomy 0.000 claims description 6
- 238000010894 electron beam technology Methods 0.000 claims description 3
- 229910052792 caesium Inorganic materials 0.000 claims 1
- TVFDJXOCXUVLDH-UHFFFAOYSA-N caesium atom Chemical compound [Cs] TVFDJXOCXUVLDH-UHFFFAOYSA-N 0.000 claims 1
- 239000003989 dielectric material Substances 0.000 description 189
- 239000000463 material Substances 0.000 description 63
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 20
- 229910052710 silicon Inorganic materials 0.000 description 20
- 239000010703 silicon Substances 0.000 description 20
- 229910004298 SiO 2 Inorganic materials 0.000 description 13
- 238000005229 chemical vapour deposition Methods 0.000 description 13
- 238000000231 atomic layer deposition Methods 0.000 description 12
- 238000000151 deposition Methods 0.000 description 12
- 239000004020 conductor Substances 0.000 description 11
- 238000001912 gas jet deposition Methods 0.000 description 11
- 238000009825 accumulation Methods 0.000 description 10
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 description 10
- 238000005530 etching Methods 0.000 description 8
- 238000000034 method Methods 0.000 description 8
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 8
- 229920005591 polysilicon Polymers 0.000 description 8
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 7
- 230000015556 catabolic process Effects 0.000 description 6
- 229910052802 copper Inorganic materials 0.000 description 5
- 238000000137 annealing Methods 0.000 description 3
- 230000000903 blocking effect Effects 0.000 description 3
- 230000005669 field effect Effects 0.000 description 3
- 229910044991 metal oxide Inorganic materials 0.000 description 3
- 150000004706 metal oxides Chemical class 0.000 description 3
- 230000003647 oxidation Effects 0.000 description 3
- 238000007254 oxidation reaction Methods 0.000 description 3
- 238000003860 storage Methods 0.000 description 3
- 230000008878 coupling Effects 0.000 description 2
- 238000010168 coupling process Methods 0.000 description 2
- 238000005859 coupling reaction Methods 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 230000003247 decreasing effect Effects 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 229910021417 amorphous silicon Inorganic materials 0.000 description 1
- 239000013590 bulk material Substances 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 230000014509 gene expression Effects 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
- H01L29/7802—Vertical DMOS transistors, i.e. VDMOS transistors
- H01L29/7813—Vertical DMOS transistors, i.e. VDMOS transistors with trench gate electrode, e.g. UMOS transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/402—Field plates
- H01L29/407—Recessed field plates, e.g. trench field plates, buried field plates
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/408—Electrodes ; Multistep manufacturing processes therefor with an insulating layer with a particular dielectric or electrostatic property, e.g. with static charges or for controlling trapped charges or moving ions, or with a plate acting on the insulator potential or the insulator charges, e.g. for controlling charges effect or potential distribution in the insulating layer, or with a semi-insulating layer contacting directly the semiconductor surface
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66674—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
- H01L29/66712—Vertical DMOS transistors, i.e. VDMOS transistors
- H01L29/66719—With a step of forming an insulating sidewall spacer
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66674—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
- H01L29/66712—Vertical DMOS transistors, i.e. VDMOS transistors
- H01L29/66734—Vertical DMOS transistors, i.e. VDMOS transistors with a step of recessing the gate electrode, e.g. to form a trench gate electrode
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/0843—Source or drain regions of field-effect devices
- H01L29/0847—Source or drain regions of field-effect devices of field-effect transistors with insulated gate
- H01L29/0852—Source or drain regions of field-effect devices of field-effect transistors with insulated gate of DMOS transistors
- H01L29/0873—Drain regions
- H01L29/0878—Impurity concentration or distribution
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- H—ELECTRICITY
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- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
- H01L29/42312—Gate electrodes for field effect devices
- H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
- H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
- H01L29/42364—Gate electrodes for field effect devices for field-effect transistors with insulated gate characterised by the insulating layer, e.g. thickness or uniformity
- H01L29/42368—Gate electrodes for field effect devices for field-effect transistors with insulated gate characterised by the insulating layer, e.g. thickness or uniformity the thickness being non-uniform
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
- H01L29/51—Insulating materials associated therewith
- H01L29/511—Insulating materials associated therewith with a compositional variation, e.g. multilayer structures
- H01L29/513—Insulating materials associated therewith with a compositional variation, e.g. multilayer structures the variation being perpendicular to the channel plane
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
- Electrodes Of Semiconductors (AREA)
Description
式中、
e0は素電荷であり、
Cは誘電材料112の容量であり、
εOxideはSiO2の誘電率であり、
ε0は真空の誘電率である。
102 ドレイン
104 ドープされた基板
106 フィールドストップ領域
108 ドリフトゾーン
110 正電荷
112 誘電材料
114 フィールドプレート
116 チャネルまたは本体領域
118 ゲート
120 本体コンタクト領域
122 ソース領域
124 オプショナル
126 誘電材料
128 ソースコンタクト
130 ゲートコンタクト
132 ソース信号経路
140 トレンチ
142 ハードマスク材料層
150 エッチストップ材料層
152a シリコン層
154a 第2の誘電材料層
Claims (7)
- ソースと、
ドレインと、
前記ソースと前記ドレインとの間に電流を選択的に流せるように構成されたゲートと、
前記ソースと前記ドレインとの間のドリフトゾーンと、
前記ドリフトゾーンと前記ソースの間の本体領域と、
前記ゲートを前記本体領域から電気的に分離している第1の誘電層と、
前記ドリフトゾーンと前記ドレインの間のドープされた半導体基板と、
前記ドリフトゾーンに隣接する第1のフィールドプレートであって、前記第1のフィールドプレートと前記ゲートとが前記ドレインに垂直な一直線に配置されるように、前記ゲートと垂直に揃えられている前記第1のフィールドプレートと、
前記第1のフィールドプレートを前記ドリフトゾーンから電気的に分離している第2の誘電層であって、前記ドープされた半導体基板内へと延びている第2の誘電層と、
前記ドリフトゾーンと前記ドープされた半導体基板に隣接する前記第2の誘電層の界面付近の前記第2の誘電層内の電荷と、を含む、トランジスタを備え、
前記トランジスタは、電荷が正電荷であるnチャネルトランジスタと、電荷が負電荷であるpチャネルトランジスタのうちの1つであり、電荷は前記第1の誘電層には存在しない、半導体デバイス。 - 前記第2の誘電層が前記ソース付近で狭くなり、前記ドレイン付近で広くなる、請求項1に記載の半導体デバイス。
- 前記第1のフィールドプレートの下に少なくとも第2のフィールドプレートをさらに含む、請求項1または2に記載の半導体デバイス。
- 前記第2のフィールドプレートの幅が前記第1のフィールドプレートの幅より狭い、請求項3に記載の半導体デバイス。
- 前記正電荷が前記第2の誘電層の電子線照射によって得られるものである、請求項1〜4のいずれか1つに記載の半導体デバイス。
- 前記正電荷がセシウムによって得られるものである、請求項1〜5のいずれか1つに記載の半導体デバイス。
- 前記正電荷が面積電荷密度を少なくとも1012/cm2にする、請求項1〜6のいずれか1つに記載の半導体デバイス。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US12/633,956 US8198678B2 (en) | 2009-12-09 | 2009-12-09 | Semiconductor device with improved on-resistance |
US12/633,956 | 2009-12-09 |
Related Parent Applications (1)
Application Number | Title | Priority Date | Filing Date |
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JP2010274176A Division JP5480791B2 (ja) | 2009-12-09 | 2010-12-09 | オン抵抗値が改善された半導体デバイス |
Publications (2)
Publication Number | Publication Date |
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JP2014078741A JP2014078741A (ja) | 2014-05-01 |
JP5757541B2 true JP5757541B2 (ja) | 2015-07-29 |
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JP2010274176A Expired - Fee Related JP5480791B2 (ja) | 2009-12-09 | 2010-12-09 | オン抵抗値が改善された半導体デバイス |
JP2013259245A Expired - Fee Related JP5757541B2 (ja) | 2009-12-09 | 2013-12-16 | オン抵抗値が改善された半導体デバイス |
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JP2010274176A Expired - Fee Related JP5480791B2 (ja) | 2009-12-09 | 2010-12-09 | オン抵抗値が改善された半導体デバイス |
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US (3) | US8198678B2 (ja) |
JP (2) | JP5480791B2 (ja) |
DE (1) | DE102010062721B4 (ja) |
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-
2009
- 2009-12-09 US US12/633,956 patent/US8198678B2/en not_active Expired - Fee Related
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2010
- 2010-12-09 DE DE102010062721.6A patent/DE102010062721B4/de not_active Expired - Fee Related
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DE102010062721A1 (de) | 2011-06-16 |
US8502315B2 (en) | 2013-08-06 |
JP2014078741A (ja) | 2014-05-01 |
JP5480791B2 (ja) | 2014-04-23 |
US20130323897A1 (en) | 2013-12-05 |
US20110133272A1 (en) | 2011-06-09 |
JP2011124576A (ja) | 2011-06-23 |
DE102010062721B4 (de) | 2018-02-22 |
US8198678B2 (en) | 2012-06-12 |
US20120217580A1 (en) | 2012-08-30 |
US8741736B2 (en) | 2014-06-03 |
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