JP5752639B2 - 接合システム、接合方法、プログラム及びコンピュータ記憶媒体 - Google Patents

接合システム、接合方法、プログラム及びコンピュータ記憶媒体 Download PDF

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JP5752639B2
JP5752639B2 JP2012121188A JP2012121188A JP5752639B2 JP 5752639 B2 JP5752639 B2 JP 5752639B2 JP 2012121188 A JP2012121188 A JP 2012121188A JP 2012121188 A JP2012121188 A JP 2012121188A JP 5752639 B2 JP5752639 B2 JP 5752639B2
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substrate
processed
wafer
adhesive
heat treatment
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Japanese (ja)
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JP2013247292A5 (https=
JP2013247292A (ja
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雅敏 出口
雅敏 出口
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Tokyo Electron Ltd
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Tokyo Electron Ltd
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Priority to JP2012121188A priority Critical patent/JP5752639B2/ja
Priority to US13/893,630 priority patent/US8846495B2/en
Priority to KR1020130055785A priority patent/KR20130133129A/ko
Publication of JP2013247292A publication Critical patent/JP2013247292A/ja
Publication of JP2013247292A5 publication Critical patent/JP2013247292A5/ja
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0438—Apparatus for making assemblies not otherwise provided for, e.g. package constructions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P10/00—Bonding of wafers, substrates or parts of devices
    • H10P10/12—Bonding of semiconductor wafers or semiconductor substrates to semiconductor wafers or semiconductor substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0402—Apparatus for fluid treatment
    • H10P72/0406—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H10P72/0411—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
    • H10P72/0414—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing using mainly spraying means, e.g. nozzles
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0428—Apparatus for mechanical treatment or grinding or cutting
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0431—Apparatus for thermal treatment
    • H10P72/0434—Apparatus for thermal treatment mainly by convection
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0448—Apparatus for applying a liquid, a resin, an ink or the like
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0451—Apparatus for manufacturing or treating in a plurality of work-stations
    • H10P72/0452—Apparatus for manufacturing or treating in a plurality of work-stations characterised by the layout of the process chambers
    • H10P72/0458—Apparatus for manufacturing or treating in a plurality of work-stations characterised by the layout of the process chambers vertical arrangement
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/30—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for conveying, e.g. between different workstations
    • H10P72/33—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for conveying, e.g. between different workstations into and out of processing chamber
    • H10P72/3302—Mechanical parts of transfer devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/74—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/74—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support
    • H10P72/7448—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support the bond interface between the auxiliary support and the wafer comprising two or more, e.g. multilayer adhesive or adhesive and release layer
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/74—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support
    • H10P72/7412—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support the auxiliary support including means facilitating the separation of a device or wafer from the auxiliary support
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/74—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support
    • H10P72/7416—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support used during dicing or grinding
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/74—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support
    • H10P72/7422—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support used to protect an active side of a device or wafer

Landscapes

  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Engineering & Computer Science (AREA)
  • Robotics (AREA)
JP2012121188A 2012-05-28 2012-05-28 接合システム、接合方法、プログラム及びコンピュータ記憶媒体 Active JP5752639B2 (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2012121188A JP5752639B2 (ja) 2012-05-28 2012-05-28 接合システム、接合方法、プログラム及びコンピュータ記憶媒体
US13/893,630 US8846495B2 (en) 2012-05-28 2013-05-14 Bonding system and bonding method
KR1020130055785A KR20130133129A (ko) 2012-05-28 2013-05-16 접합 시스템, 접합 방법 및 컴퓨터 기억 매체

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2012121188A JP5752639B2 (ja) 2012-05-28 2012-05-28 接合システム、接合方法、プログラム及びコンピュータ記憶媒体

Publications (3)

Publication Number Publication Date
JP2013247292A JP2013247292A (ja) 2013-12-09
JP2013247292A5 JP2013247292A5 (https=) 2014-06-26
JP5752639B2 true JP5752639B2 (ja) 2015-07-22

Family

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JP2012121188A Active JP5752639B2 (ja) 2012-05-28 2012-05-28 接合システム、接合方法、プログラム及びコンピュータ記憶媒体

Country Status (3)

Country Link
US (1) US8846495B2 (https=)
JP (1) JP5752639B2 (https=)
KR (1) KR20130133129A (https=)

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KR101708143B1 (ko) * 2013-06-17 2017-02-17 에베 그룹 에. 탈너 게엠베하 기판 정렬 장치 및 방법
JP5538613B1 (ja) * 2013-11-13 2014-07-02 東京エレクトロン株式会社 接合装置及び接合システム
JP6145061B2 (ja) 2014-03-04 2017-06-07 東京エレクトロン株式会社 接合システムおよび接合方法
JP6228508B2 (ja) 2014-05-01 2017-11-08 東京エレクトロン株式会社 洗浄装置、剥離システム、洗浄方法、プログラム及びコンピュータ記憶媒体
JP6153886B2 (ja) * 2014-05-09 2017-06-28 東京エレクトロン株式会社 洗浄装置、剥離システム、洗浄方法、プログラム及びコンピュータ記憶媒体
JP6254054B2 (ja) * 2014-08-21 2017-12-27 東京エレクトロン株式会社 塗布装置、接合システム、塗布方法、接合方法、プログラム、および情報記憶媒体
DE102015108901A1 (de) * 2015-06-05 2016-12-08 Ev Group E. Thallner Gmbh Verfahren zum Ausrichten von Substraten vor dem Bonden
JP2017034108A (ja) * 2015-08-03 2017-02-09 東京エレクトロン株式会社 基板保持部材
JP6512986B2 (ja) 2015-08-03 2019-05-15 東京エレクトロン株式会社 接合装置及び接合システム
US10418264B2 (en) * 2016-06-08 2019-09-17 Hermes-Epitek Corporation Assembling device used for semiconductor equipment
US20180068843A1 (en) * 2016-09-07 2018-03-08 Raytheon Company Wafer stacking to form a multi-wafer-bonded structure
US10903066B2 (en) 2017-05-08 2021-01-26 Applied Materials, Inc. Heater support kit for bevel etch chamber
US10300649B2 (en) 2017-08-29 2019-05-28 Raytheon Company Enhancing die flatness
CN110838462B (zh) * 2018-08-15 2022-12-13 北科天绘(合肥)激光技术有限公司 一种器件阵列的巨量转移方法及系统
US10847569B2 (en) 2019-02-26 2020-11-24 Raytheon Company Wafer level shim processing
TWI899196B (zh) * 2020-04-13 2025-10-01 日商東京威力科創股份有限公司 接合系統
JP7008110B2 (ja) * 2020-08-04 2022-01-25 エーファウ・グループ・エー・タルナー・ゲーエムベーハー 基板をボンディングするための方法および装置
CN112403838A (zh) * 2020-11-19 2021-02-26 合肥高地创意科技有限公司 一种集成电路保护带表面抗静电液涂覆装置

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JP3464005B2 (ja) * 1991-08-16 2003-11-05 東京エレクトロン株式会社 熱処理方法
JP3218164B2 (ja) * 1995-05-31 2001-10-15 東京エレクトロン株式会社 被処理体の支持ボート、熱処理装置及び熱処理方法
DE10320375B3 (de) * 2003-05-07 2004-12-16 Süss Micro Tec Laboratory Equipment GmbH Verfahren zum temporären Fixieren zweier flächiger Werksücke
US7226812B2 (en) * 2004-03-31 2007-06-05 Intel Corporation Wafer support and release in wafer processing
JP5027460B2 (ja) * 2006-07-28 2012-09-19 東京応化工業株式会社 ウエハの接着方法、薄板化方法、及び剥離方法
JP2008182016A (ja) 2007-01-24 2008-08-07 Tokyo Electron Ltd 貼り合わせ装置、貼り合わせ方法
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Publication number Publication date
US8846495B2 (en) 2014-09-30
US20130316516A1 (en) 2013-11-28
KR20130133129A (ko) 2013-12-06
JP2013247292A (ja) 2013-12-09

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