JP5743848B2 - 非平面フタロシアニンの弱エピタキシー成長用の固溶体誘起層 - Google Patents
非平面フタロシアニンの弱エピタキシー成長用の固溶体誘起層 Download PDFInfo
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- JP5743848B2 JP5743848B2 JP2011235585A JP2011235585A JP5743848B2 JP 5743848 B2 JP5743848 B2 JP 5743848B2 JP 2011235585 A JP2011235585 A JP 2011235585A JP 2011235585 A JP2011235585 A JP 2011235585A JP 5743848 B2 JP5743848 B2 JP 5743848B2
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- 239000006104 solid solution Substances 0.000 title claims description 67
- IEQIEDJGQAUEQZ-UHFFFAOYSA-N phthalocyanine Chemical compound N1C(N=C2C3=CC=CC=C3C(N=C3C4=CC=CC=C4C(=N4)N3)=N2)=C(C=CC=C2)C2=C1N=C1C2=CC=CC=C2C4=N1 IEQIEDJGQAUEQZ-UHFFFAOYSA-N 0.000 title claims description 26
- 238000000407 epitaxy Methods 0.000 title description 10
- 230000001939 inductive effect Effects 0.000 claims description 70
- 239000010409 thin film Substances 0.000 claims description 47
- 239000010408 film Substances 0.000 claims description 35
- 230000006698 induction Effects 0.000 claims description 20
- 239000004065 semiconductor Substances 0.000 claims description 18
- 239000000758 substrate Substances 0.000 claims description 15
- 125000003118 aryl group Chemical group 0.000 claims description 9
- 125000001997 phenyl group Chemical group [H]C1=C([H])C([H])=C(*)C([H])=C1[H] 0.000 claims description 8
- 125000001153 fluoro group Chemical group F* 0.000 claims description 6
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 4
- 229910052731 fluorine Inorganic materials 0.000 claims description 4
- 125000004435 hydrogen atom Chemical group [H]* 0.000 claims description 4
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 4
- 238000007740 vapor deposition Methods 0.000 claims description 4
- 238000004630 atomic force microscopy Methods 0.000 description 15
- YRZZLAGRKZIJJI-UHFFFAOYSA-N oxyvanadium phthalocyanine Chemical compound [V+2]=O.C12=CC=CC=C2C(N=C2[N-]C(C3=CC=CC=C32)=N2)=NC1=NC([C]1C=CC=CC1=1)=NC=1N=C1[C]3C=CC=CC3=C2[N-]1 YRZZLAGRKZIJJI-UHFFFAOYSA-N 0.000 description 12
- 239000000463 material Substances 0.000 description 11
- 230000000875 corresponding effect Effects 0.000 description 8
- 238000000151 deposition Methods 0.000 description 6
- 238000002474 experimental method Methods 0.000 description 6
- 238000002441 X-ray diffraction Methods 0.000 description 5
- 239000013078 crystal Substances 0.000 description 5
- 238000002003 electron diffraction Methods 0.000 description 5
- 238000000635 electron micrograph Methods 0.000 description 5
- 238000012546 transfer Methods 0.000 description 5
- 238000004770 highest occupied molecular orbital Methods 0.000 description 4
- 238000000034 method Methods 0.000 description 4
- OHZAHWOAMVVGEL-UHFFFAOYSA-N 2,2'-bithiophene Chemical compound C1=CSC(C=2SC=CC=2)=C1 OHZAHWOAMVVGEL-UHFFFAOYSA-N 0.000 description 3
- -1 4-biphenylyl Chemical group 0.000 description 3
- INTUSBADCKWMED-UHFFFAOYSA-N BPPP Chemical compound BPPP INTUSBADCKWMED-UHFFFAOYSA-N 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 230000008020 evaporation Effects 0.000 description 3
- 238000001704 evaporation Methods 0.000 description 3
- 239000011521 glass Substances 0.000 description 3
- 239000012528 membrane Substances 0.000 description 3
- 125000001255 4-fluorophenyl group Chemical group [H]C1=C([H])C(*)=C([H])C([H])=C1F 0.000 description 2
- 239000013065 commercial product Substances 0.000 description 2
- 230000002596 correlated effect Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000002524 electron diffraction data Methods 0.000 description 2
- 239000012212 insulator Substances 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 238000002360 preparation method Methods 0.000 description 2
- 238000000746 purification Methods 0.000 description 2
- 238000000859 sublimation Methods 0.000 description 2
- 230000008022 sublimation Effects 0.000 description 2
- RIDYHGIOGHABHK-UHFFFAOYSA-N 1-(4-phenylphenyl)phenanthrene Chemical compound C1=CC=CC=C1C1=CC=C(C=2C3=C(C4=CC=CC=C4C=C3)C=CC=2)C=C1 RIDYHGIOGHABHK-UHFFFAOYSA-N 0.000 description 1
- JIEYRXGNZIQQNF-UHFFFAOYSA-N FC1=CC=C(C=C1)C1=C(C=CC=C1)C1=CC=CC2=C1SC1=C2C=CC=C1 Chemical compound FC1=CC=C(C=C1)C1=C(C=CC=C1)C1=CC=CC2=C1SC1=C2C=CC=C1 JIEYRXGNZIQQNF-UHFFFAOYSA-N 0.000 description 1
- RJDGGVYGWXOERE-UHFFFAOYSA-N FC1=CC=C(C=C1)C1=C(C=CC=C1)C1=CC=CC=2C=CC3=CC=CC=C3C12 Chemical compound FC1=CC=C(C=C1)C1=C(C=CC=C1)C1=CC=CC=2C=CC3=CC=CC=C3C12 RJDGGVYGWXOERE-UHFFFAOYSA-N 0.000 description 1
- WFXFLQAKFNNHPC-UHFFFAOYSA-N FC1=CC=C(C=C1)C1=C(C=CC=C1)C=1C=C(SC1)C=1SC=CC1 Chemical compound FC1=CC=C(C=C1)C1=C(C=CC=C1)C=1C=C(SC1)C=1SC=CC1 WFXFLQAKFNNHPC-UHFFFAOYSA-N 0.000 description 1
- 229910001182 Mo alloy Inorganic materials 0.000 description 1
- 229910000583 Nd alloy Inorganic materials 0.000 description 1
- 238000005411 Van der Waals force Methods 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- ZUEWFHPMLANBBZ-UHFFFAOYSA-N c1ccc(cc1)-c1ccc(cc1)-c1cccc2sc3ccccc3c12 Chemical compound c1ccc(cc1)-c1ccc(cc1)-c1cccc2sc3ccccc3c12 ZUEWFHPMLANBBZ-UHFFFAOYSA-N 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 238000004581 coalescence Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000011049 filling Methods 0.000 description 1
- 238000001755 magnetron sputter deposition Methods 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000005191 phase separation Methods 0.000 description 1
- 238000001259 photo etching Methods 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 238000002207 thermal evaporation Methods 0.000 description 1
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/54—Organic compounds
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- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
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- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/12—Organic material
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/24—Vacuum evaporation
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
- C30B23/002—Controlling or regulating
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/30—Coordination compounds
- H10K85/311—Phthalocyanine
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/60—Organic compounds having low molecular weight
- H10K85/649—Aromatic compounds comprising a hetero atom
- H10K85/655—Aromatic compounds comprising a hetero atom comprising only sulfur as heteroatom
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/60—Organic compounds having low molecular weight
- H10K85/649—Aromatic compounds comprising a hetero atom
- H10K85/657—Polycyclic condensed heteroaromatic hydrocarbons
- H10K85/6576—Polycyclic condensed heteroaromatic hydrocarbons comprising only sulfur in the heteroaromatic polycondensed ring system, e.g. benzothiophene
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
- H10K10/40—Organic transistors
- H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
- H10K10/462—Insulated gate field-effect transistors [IGFETs]
- H10K10/466—Lateral bottom-gate IGFETs comprising only a single gate
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/26—Web or sheet containing structurally defined element or component, the element or component having a specified physical dimension
- Y10T428/261—In terms of molecular thickness or light wave length
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/26—Web or sheet containing structurally defined element or component, the element or component having a specified physical dimension
- Y10T428/263—Coating layer not in excess of 5 mils thick or equivalent
- Y10T428/264—Up to 3 mils
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- Chemical Kinetics & Catalysis (AREA)
- Crystallography & Structural Chemistry (AREA)
- Physics & Mathematics (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Inorganic Chemistry (AREA)
- Thin Film Transistor (AREA)
- Heterocyclic Carbon Compounds Containing A Hetero Ring Having Oxygen Or Sulfur (AREA)
Description
2,7−ビ(4−ビフェニリル)−フェナントレン(BPPh)、2,7−ビ(4−ビフェニリル)−ジベンゾチオフェン(BPBTB)、2,6−ビ(4−ビフェニリル)−ベンゾ[1,2−β:4,5−β’]ビチオフェン(BPTBT)、2,5−ビ(4−ビフェニリル)−[3,2−β]ビジチオフェン(bidithiophene)(BPTT)、5,5’’−ビ(ビフェニリル)−2,2’:5’,2’’−テルチオフェン(BP3T)、5,5’’’−ビ(ビフェニリル)−2,2’:5’,2’’:5’’,2’’’−クアテルチオフェン(BP4T)、1,1’:4’,1’’:4’’,1’’’:4’’’,1’’’’:4’’’’,1’’’’’:4’’’’’,1’’’’’’:4’’’’’’,1’’’’’’’−オクチフェニル(p8P)、2,5−ビ(4−1,1’:4’,1’’−テルビフェニリル(terbiphenylyl))−チオフラン(3PT)、5,5’−ビ(4−1,1’:4’,1’’−テルビフェニリル)−2,2’−ビチオフェン(3P2T)、2,5−ビ(4−1,1’:4’,1’’−テルビフェニリル)−[3,2−β]ビジチオフェン(3PTT)、2,7−ビ(4−4’−フルオロビフェニリル)−フェナントレン(F2−BPPh)、2,7−ビ(4−4’−フルオロビフェニリル)−ジベンゾチオフェン(F2−BPBTB)、2,6−ビ(4−4’−フルオロビフェニリル)−ベンゾ[1,2−β:4,5−β’]ビチオフェン(F2−BPTBT)、2,5−ビ(4−4’−フルオロビフェニリル)−[3,2−b]ビジチオフェン(F2−BPTT)、5,5’−ビ(4−4’−フルオロビフェニリル)−2,2’−ビチオフェン(F2−BP2T)、5,5’’−ビ(4−4’−フルオロビフェニリル)−2,2’:5’,2’’−テルチオフェン(F2−BP3T)、5,5’’’−ビ(4−4’−フルオロビフェニリル)−2,2’:5’,2’’:5’’,2’’’−クアテルチオフェン(F2−BP4T)、4,4’’’’’−ビ(4−フルオロフェニル)−1,1’:4’,1’’:4’’,1’’’:4’’’,1’’’’:4’’’’,1’’’’’−セキシフェニル(F2−p8P)、2,5−ビ(4−4’’−フルオロ−1,1’:4’,1’’−テルビフェニリル)−チオフラン(F2−3PT)、5,5’−ビ(4−4’’−フルオロ−1,1’:4’,1’’−テルビフェニリル)−2,2’−ビチオフェン(F2−3P2T)、2,5−ビ(4−4’’−フルオロ−1,1’:4’,1’’−テルビフェニリル)−[3,2−β]ビジチオフェン(F2−3PTT)、2,7−ビ(4−3’,5’−ビフルオロビフェニリル(bifluorobiphenylyl))−フェナントレン(F4−BPPh)、2,7−ビ(4−3’,5’−ビフルオロビフェニリル)−ジベンゾチオフェン(F4−BPBTB)、2,6−ビ(4−3’,5’−ビフルオロビフェニリル)−ベンゾ[1,2−β:4,5−β’]ビチオフェン(F4−BPTBT)、2,5−ビ(4−3’,5’−ビフルオロビフェニリル)−[3,2−β]ビジチオフェン(F4−BPTT)、5,5’−ビ(4−3’,5’−ビフルオロビフェニリル)−2,2−ビチオフェン(F4−BP2T)、5,5’’−ビ(4−3’,5’−ビフルオロビフェニリル)−2,2’:5’,2’’−テルチオフェン(F4−BP3T)、5,5’’’−ビ(4−3’,5’−ビフルオロビフェニリル)−2,2’:5’,2’’:5’’,2’’’−クアテルチオフェン(F4−BP4T)、4,4’’’’’−ビ(3,5−ビフルオロフェニル)−1,1’:4’,1’’:4’’,1’’’:4’’’,1’’’’:4’’’’,1’’’’’−オクチフェニル(F4−p8P)、2,5−ビ(4−3’’,5’’−ジフルオロ−1,1’:4’,1’’−テルフェニリル)−チオフラン(F4−3PT)、5,5’−ビ(4−3’’,5’’−ジフルオロ−1,1’:4’,1’’−テルフェニリル)−2,2’−ビチオフェン(F4−3P2T)、2,5−ビ(4−3’’,5’’−ジフルオロ−1,1’:4’,1’’−テルフェニリル)−[3,2−β]ビジチオフェン(F4−3PTT)、5,5’’’−ジフェニル−2,2’:5’,2’’:5’’,2’’’−テトラチオフェン(P4T)、5,5’’’−ビ(4−フルオロフェニル)−2,2’:5’,2’’:5’’,2’’’−テトラチオフェン(F2−P4T)および5,5’’’−ビ(3,5−ビフルオロフェニル)−2,2’:5’,2’’:5’’,2’’’−テトラチオフェン(F4−P4T)
である。
2 有機半導体層
3 固溶体誘起層、窒化ケイ素の表面
4 絶縁体、絶縁層
5 ゲート電極、グリッド電極
6 基板、Corning 7059ガラス基板
Claims (10)
- 前記2つの誘起層分子が、下記のタイプ:[タイプ1、2つの分子が末端基としてフェニルを使用し、中央の共役芳香族基が異なる;タイプ2、一方の分子が末端基としてフェニルを使用し、他方の分子が末端基としてフッ素置換フェニルを使用し、中央の共役芳香族基が同じまたは異なる;タイプ3、2つの分子が末端基としてフッ素置換フェニルを使用し、中央の共役芳香族基が同じまたは異なる]のいずれかで組み合わせられていることを特徴とする、請求項1に記載の非平面フタロシアニンの弱エピタキシャル膜用の固溶体誘起層。
- 前記基板温度が150℃から240℃の間であることを特徴とする、請求項1または2に記載の非平面フタロシアニンの弱エピタキシャル膜用の固溶体誘起層。
- 前記共堆積が、前記誘起層の2つの分子を蒸着によって同時に堆積させることであることを特徴とする、請求項1から3のいずれかに記載の非平面フタロシアニンの弱エピタキシャル膜用の固溶体誘起層。
- 前記蒸着が分子蒸着であり、ここで真空度は10 −4 から10 −5 Paであることを特徴とする、請求項5に記載の非平面フタロシアニンの弱エピタキシャル膜用の固溶体誘起層。
- 前記誘起層分子の共堆積の前に、窒化ケイ素層が基板上に堆積され、その厚さは200から500nmであることを特徴とする、請求項1から5のいずれかに記載の非平面フタロシアニンの弱エピタキシャル膜用の固溶体誘起層。
- 基板上の共堆積固溶体誘起層の厚さが1から3分子層であることを特徴とする、請求項1から6のいずれかに記載の非平面フタロシアニンの弱エピタキシャル膜用の固溶体誘起層。
- 請求項1から7に記載の固溶体誘起層のいずれか1つの上に、非平面フタロシアニンの弱エピタキシャル成長から形成され、薄膜と前記固溶体誘起層との間に配向関係があることを特徴とする、非平面フタロシアニンの薄膜。
- 請求項8に記載の前記固溶体誘起層(3)の上に、非平面フタロシアニン弱エピタキシャル成長の薄膜を含むことを特徴とする有機薄膜トランジスタであって、前記固溶体誘起層上の非平面フタロシアニン弱エピタキシャル成長の薄膜が、前記トランジスタ中の有機半導体層(2)である、有機薄膜トランジスタ。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
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CN201010605569.2A CN102560632B (zh) | 2010-12-21 | 2010-12-21 | 用于非平面酞菁薄膜弱外延生长的固熔体诱导层 |
CN201010605569.2 | 2010-12-21 |
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JP2012134457A JP2012134457A (ja) | 2012-07-12 |
JP5743848B2 true JP5743848B2 (ja) | 2015-07-01 |
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US (1) | US8598151B2 (ja) |
EP (1) | EP2468930B1 (ja) |
JP (1) | JP5743848B2 (ja) |
CN (1) | CN102560632B (ja) |
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JP3664069B2 (ja) * | 1999-12-24 | 2005-06-22 | 松下電器産業株式会社 | 有機電界発光素子 |
JP2003017276A (ja) * | 2001-04-27 | 2003-01-17 | Semiconductor Energy Lab Co Ltd | 発光装置及びその作製方法 |
JP3946484B2 (ja) * | 2001-10-22 | 2007-07-18 | 独立行政法人科学技術振興機構 | 光電流増倍装置及びその増倍率制御方法 |
US6869821B2 (en) * | 2002-12-30 | 2005-03-22 | Xerox Corporation | Method for producing organic electronic devices on deposited dielectric materials |
JP4220951B2 (ja) * | 2004-09-24 | 2009-02-04 | 国立大学法人広島大学 | 新規な有機半導体化合物、その製造方法およびそれを用いた有機半導体デバイス |
JP4989907B2 (ja) * | 2005-03-24 | 2012-08-01 | 株式会社半導体エネルギー研究所 | 半導体装置及び電子機器 |
CN100555702C (zh) * | 2006-04-29 | 2009-10-28 | 中国科学院长春应用化学研究所 | 有机半导体晶体薄膜及弱取向外延生长制备方法和应用 |
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EP2468930A2 (en) | 2012-06-27 |
CN102560632B (zh) | 2016-06-29 |
CN102560632A (zh) | 2012-07-11 |
US20120153265A1 (en) | 2012-06-21 |
EP2468930B1 (en) | 2016-11-23 |
EP2468930A3 (en) | 2014-01-01 |
JP2012134457A (ja) | 2012-07-12 |
US8598151B2 (en) | 2013-12-03 |
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