JP5736400B2 - ガスセンサを有する集積回路 - Google Patents
ガスセンサを有する集積回路 Download PDFInfo
- Publication number
- JP5736400B2 JP5736400B2 JP2013028220A JP2013028220A JP5736400B2 JP 5736400 B2 JP5736400 B2 JP 5736400B2 JP 2013028220 A JP2013028220 A JP 2013028220A JP 2013028220 A JP2013028220 A JP 2013028220A JP 5736400 B2 JP5736400 B2 JP 5736400B2
- Authority
- JP
- Japan
- Prior art keywords
- sensor element
- integrated circuit
- gas
- layer
- main surface
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 229910052751 metal Inorganic materials 0.000 claims description 45
- 239000002184 metal Substances 0.000 claims description 45
- 230000004888 barrier function Effects 0.000 claims description 40
- 238000010438 heat treatment Methods 0.000 claims description 21
- 239000000758 substrate Substances 0.000 claims description 19
- 239000004065 semiconductor Substances 0.000 claims description 16
- 239000000463 material Substances 0.000 claims description 13
- 238000004519 manufacturing process Methods 0.000 claims description 12
- 229920002120 photoresistant polymer Polymers 0.000 claims description 5
- 238000004378 air conditioning Methods 0.000 claims description 4
- 238000009423 ventilation Methods 0.000 claims description 4
- 230000001419 dependent effect Effects 0.000 claims description 3
- 238000010295 mobile communication Methods 0.000 claims description 3
- 239000007789 gas Substances 0.000 description 123
- 239000010410 layer Substances 0.000 description 93
- 239000011095 metalized laminate Substances 0.000 description 23
- 230000000694 effects Effects 0.000 description 13
- 238000000034 method Methods 0.000 description 13
- 238000001465 metallisation Methods 0.000 description 8
- 238000005259 measurement Methods 0.000 description 7
- 238000001816 cooling Methods 0.000 description 6
- 238000012544 monitoring process Methods 0.000 description 6
- 238000002161 passivation Methods 0.000 description 6
- 238000010586 diagram Methods 0.000 description 4
- 238000012545 processing Methods 0.000 description 4
- 239000011241 protective layer Substances 0.000 description 4
- 230000035945 sensitivity Effects 0.000 description 4
- 229910052721 tungsten Inorganic materials 0.000 description 4
- 239000000853 adhesive Substances 0.000 description 3
- 230000001070 adhesive effect Effects 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 3
- 230000007423 decrease Effects 0.000 description 3
- 239000007769 metal material Substances 0.000 description 3
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 3
- 239000010937 tungsten Substances 0.000 description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 238000013461 design Methods 0.000 description 2
- 238000000206 photolithography Methods 0.000 description 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 2
- 229920000642 polymer Polymers 0.000 description 2
- 238000012546 transfer Methods 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- 238000007792 addition Methods 0.000 description 1
- 239000012491 analyte Substances 0.000 description 1
- 235000013361 beverage Nutrition 0.000 description 1
- 239000000112 cooling gas Substances 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 238000001459 lithography Methods 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 230000000116 mitigating effect Effects 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
Images
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N27/00—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means
- G01N27/02—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance
- G01N27/04—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance by investigating resistance
- G01N27/14—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance by investigating resistance of an electrically-heated body in dependence upon change of temperature
- G01N27/18—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance by investigating resistance of an electrically-heated body in dependence upon change of temperature caused by changes in the thermal conductivity of a surrounding material to be tested
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N33/00—Investigating or analysing materials by specific methods not covered by groups G01N1/00 - G01N31/00
- G01N33/0004—Gaseous mixtures, e.g. polluted air
- G01N33/0009—General constructional details of gas analysers, e.g. portable test equipment
- G01N33/0027—General constructional details of gas analysers, e.g. portable test equipment concerning the detector
- G01N33/0036—General constructional details of gas analysers, e.g. portable test equipment concerning the detector specially adapted to detect a particular component
- G01N33/004—CO or CO2
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N15/00—Thermoelectric devices without a junction of dissimilar materials; Thermomagnetic devices, e.g. using the Nernst-Ettingshausen effect
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N15/00—Thermoelectric devices without a junction of dissimilar materials; Thermomagnetic devices, e.g. using the Nernst-Ettingshausen effect
- H10N15/10—Thermoelectric devices using thermal change of the dielectric constant, e.g. working above and below the Curie point
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N19/00—Integrated devices, or assemblies of multiple devices, comprising at least one thermoelectric or thermomagnetic element covered by groups H10N10/00 - H10N15/00
Landscapes
- Chemical & Material Sciences (AREA)
- Health & Medical Sciences (AREA)
- Life Sciences & Earth Sciences (AREA)
- General Health & Medical Sciences (AREA)
- Immunology (AREA)
- Pathology (AREA)
- Analytical Chemistry (AREA)
- Biochemistry (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Electrochemistry (AREA)
- Combustion & Propulsion (AREA)
- Food Science & Technology (AREA)
- Medicinal Chemistry (AREA)
- Investigating Or Analyzing Materials By The Use Of Electric Means (AREA)
- Investigating Or Analyzing Materials Using Thermal Means (AREA)
Description
Claims (12)
- 主表面を有する半導体基板と、
前記主表面上に位置する電気抵抗性のセンサ素子であって、検出すべきガスに曝すための当該センサ素子を有する熱伝導性に基づくガスセンサと、
前記主表面上に設けられた積層体に配置され、検出すべきガス流がセンサ素子を通過するのを阻止するための障壁と
を具え、
前記センサ素子は、複数の金属層と、該金属層を分離すると共に該金属層を相互連結するビアを有するビア層とを含む、前記主表面上の前記積層体における溝内であって、前記積層体の頂部よりも前記積層体の底部の近くに位置し、前記金属層又は前記ビア層内に形成されている集積回路。 - 請求項1に記載の集積回路において、前記ガスセンサが更に、検出すべきガスを加熱する加熱素子を具え、この加熱素子は前記センサ素子と一緒に前記溝内に配置されている集積回路。
- 請求項1又は2に記載の集積回路において、この集積回路は前記半導体基板の前記主表面上にパターン化層を具えており、このパターン化層は前記障壁の少なくとも一部分を形成している集積回路。
- 請求項1又は2の何れか一項に従属する場合の請求項3に記載の集積回路において、前記パターン化層が前記積層体上に位置し、前記溝と前記パターン化層とが相俟って前記障壁を構成している集積回路。
- 請求項2又は3に記載の集積回路において、前記パターン化層がフォトレジスト材料を有している集積回路。
- 請求項5に記載の集積回路において、前記フォトレジスト材料がSU‐8を有している集積回路。
- 請求項3〜6の何れか一項に記載の集積回路において、前記パターン化層が、幅を1とし深さdを15≦d≦30の範囲内とした深さ対幅のアスペクト比を有する空洞を形成している集積回路。
- 請求項7に記載の集積回路において、前記パターン化層により形成された前記空洞の深さを少なくとも10μmとした集積回路。
- 請求項1〜8の何れか一項に記載の集積回路を具える無線周波数識別(RFID)タグ。
- 請求項1〜8の何れか一項に記載の集積回路を具えるモバイル通信装置。
- 請求項1〜8の何れか一項に記載の集積回路を1つ以上具える暖房換気空調(HVAC)システム。
- 主表面を有する半導体基板を設けるステップと、
前記主表面上に位置する電気抵抗性のセンサ素子であって、検出すべきガスに曝すための当該センサ素子を有する熱伝導性に基づくガスセンサを形成するステップと、
前記主表面上に設けられた積層体に、ガス流が前記センサ素子を通過するのを阻止するための障壁を形成するステップと、
前記センサ素子を、複数の金属層と、該金属層を分離すると共に該金属層を相互連結するビアを有するビア層とを含む、前記主表面上の前記積層体における溝内であって、前記積層体の頂部よりも前記積層体の底部の近くに配置し、前記金属層又は前記ビア層内に形成するステップと
を有する集積回路の製造方法。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
EP12162383.9 | 2012-03-30 | ||
EP12162383.9A EP2645091B1 (en) | 2012-03-30 | 2012-03-30 | Integrated circuit comprising a gas sensor |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2013213811A JP2013213811A (ja) | 2013-10-17 |
JP5736400B2 true JP5736400B2 (ja) | 2015-06-17 |
Family
ID=45936986
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2013028220A Active JP5736400B2 (ja) | 2012-03-30 | 2013-02-15 | ガスセンサを有する集積回路 |
Country Status (4)
Country | Link |
---|---|
US (2) | US9263500B2 (ja) |
EP (1) | EP2645091B1 (ja) |
JP (1) | JP5736400B2 (ja) |
CN (1) | CN103364455B (ja) |
Families Citing this family (21)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US9158693B2 (en) | 2011-10-31 | 2015-10-13 | Intel Corporation | Dynamically controlling cache size to maximize energy efficiency |
EP2645091B1 (en) | 2012-03-30 | 2018-10-17 | ams international AG | Integrated circuit comprising a gas sensor |
EP2720034B1 (en) * | 2012-10-12 | 2016-04-27 | ams International AG | Integrated Circuit comprising a relative humidity sensor and a thermal conductivity based gas sensor |
EP2863214B1 (en) * | 2013-10-15 | 2019-12-18 | ams international AG | A thermal conductivity detector having a multi-layer sensing element, a gas sensor, and a method of gas sensing |
CN106030297B (zh) * | 2013-11-12 | 2019-05-31 | 拉芳德利责任有限公司 | 集成气体传感器和相关制造工艺 |
WO2015072430A1 (ja) * | 2013-11-15 | 2015-05-21 | 本田技研工業株式会社 | ガスセンサ |
US9835574B2 (en) | 2014-07-02 | 2017-12-05 | Stmicroelectronics S.R.L. | Gas measurement device and measurement method thereof |
EP3215985B1 (en) | 2014-11-07 | 2019-07-03 | 3M Innovative Properties Company | Wireless sensor for thermal property with thermal source |
US20160131328A1 (en) | 2014-11-07 | 2016-05-12 | Lighthouse Technologies Limited | Indoor smd led equipped for outdoor usage |
WO2016073344A1 (en) | 2014-11-07 | 2016-05-12 | 3M Innovative Properties Company | Wireless sensing devices and method for detecting hydration |
CN107077632B (zh) | 2014-11-07 | 2018-12-14 | 3M创新有限公司 | 具有多个天线、ic和/或感测元件的标签组件 |
WO2016073408A1 (en) | 2014-11-07 | 2016-05-12 | 3M Innovative Properties Company | Wireless sensing system using sensing device with excitation element |
GB201421102D0 (en) | 2014-11-27 | 2015-01-14 | Cambridge Entpr Ltd | Thermal conductivity sensing device, methods for operation and uses of the same |
US9658179B2 (en) | 2015-06-24 | 2017-05-23 | Infineon Technologies Ag | System and method for a MEMS transducer |
US10254261B2 (en) * | 2016-07-18 | 2019-04-09 | Stmicroelectronics Pte Ltd | Integrated air quality sensor that detects multiple gas species |
US10557812B2 (en) | 2016-12-01 | 2020-02-11 | Stmicroelectronics Pte Ltd | Gas sensors |
CN107607152B (zh) * | 2017-07-18 | 2020-05-15 | 上海申矽凌微电子科技有限公司 | 传感器的制造方法及传感器 |
CN108717097A (zh) * | 2018-04-10 | 2018-10-30 | 杭州电子科技大学 | 一种降气体流速的mems缓冲器结构 |
CN108680703A (zh) * | 2018-04-10 | 2018-10-19 | 杭州电子科技大学 | 一种用于微气体传感器的mems缓冲器结构 |
CN108982905B (zh) * | 2018-07-27 | 2021-09-07 | 杭州电子科技大学 | 集流量传感器为一体的可降气体流速的mems缓冲结构 |
KR102487972B1 (ko) * | 2021-06-24 | 2023-01-16 | (주)위드멤스 | 일체 구조를 갖는 기체 열전도 방식의 수소 센서 |
Family Cites Families (22)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE3279831D1 (en) * | 1981-10-09 | 1989-08-24 | Honeywell Inc | Integrated semiconductor device and method of fabricating said device |
JPH0196549A (ja) * | 1987-10-07 | 1989-04-14 | Sharp Corp | センサ素子 |
JP3106324B2 (ja) * | 1992-02-12 | 2000-11-06 | 株式会社トーキン | 熱伝導式絶対湿度センサ |
JPH085597A (ja) * | 1994-06-22 | 1996-01-12 | Tokyo Gas Co Ltd | 防風構造を有するマイクロガスセンサ |
JPH08110317A (ja) * | 1994-10-12 | 1996-04-30 | Hitachi Ltd | 集積型マイクロセンサ |
JP3346927B2 (ja) * | 1994-12-08 | 2002-11-18 | 東京瓦斯株式会社 | ガスメータ |
GB2321336B (en) * | 1997-01-15 | 2001-07-25 | Univ Warwick | Gas-sensing semiconductor devices |
US6361206B1 (en) * | 1999-01-28 | 2002-03-26 | Honeywell International Inc. | Microsensor housing |
US8357958B2 (en) * | 2004-04-02 | 2013-01-22 | Silicon Laboratories Inc. | Integrated CMOS porous sensor |
WO2005095936A1 (en) | 2004-04-02 | 2005-10-13 | Timothy Cummins | An integrated electronic sensor |
GB0500393D0 (en) * | 2005-01-10 | 2005-02-16 | Univ Warwick | Microheaters |
JP2006226860A (ja) * | 2005-02-18 | 2006-08-31 | Hitachi Ltd | セラミックスセンサおよびその製造方法 |
JP2007248357A (ja) | 2006-03-17 | 2007-09-27 | Toyota Central Res & Dev Lab Inc | ガスセンサと、それを用いる燃料供給システムと、その使用方法 |
JP5230127B2 (ja) * | 2007-06-06 | 2013-07-10 | キヤノン株式会社 | 燃料電池システム、及び燃料電池システムの制御方法 |
JP2010533840A (ja) * | 2007-07-13 | 2010-10-28 | ザ ボード オブ トラスティーズ オブ ザ リランド スタンフォード ジュニア ユニヴァーシティ | 改善された生物学的アッセイのための電場を用いる方法および器具 |
JP4888908B2 (ja) * | 2007-10-17 | 2012-02-29 | 株式会社神戸製鋼所 | メンブレン構造素子及びその製造方法 |
CN101368921B (zh) * | 2008-09-08 | 2011-11-16 | 无锡尚沃生物科技有限公司 | 高灵敏度与高选择性气体传感器 |
JP5182431B2 (ja) | 2009-09-28 | 2013-04-17 | 株式会社村田製作所 | 無線icデバイスおよびそれを用いた環境状態検出方法 |
DE102010012042A1 (de) * | 2010-03-19 | 2011-09-22 | Epcos Ag | Bauelement mit einem Chip in einem Hohlraum und einer spannungsreduzierten Befestigung |
EP2554980B1 (en) | 2011-08-03 | 2014-06-25 | Nxp B.V. | Integrated circuit with sensor and method of manufacturing such an integrated circuit |
EP2559996B1 (en) | 2011-08-16 | 2017-11-22 | Nxp B.V. | Gas sensor |
EP2645091B1 (en) | 2012-03-30 | 2018-10-17 | ams international AG | Integrated circuit comprising a gas sensor |
-
2012
- 2012-03-30 EP EP12162383.9A patent/EP2645091B1/en active Active
-
2013
- 2013-02-15 JP JP2013028220A patent/JP5736400B2/ja active Active
- 2013-03-26 CN CN201310098655.2A patent/CN103364455B/zh active Active
- 2013-03-28 US US13/852,978 patent/US9263500B2/en active Active
-
2016
- 2016-02-11 US US15/042,011 patent/US9865647B2/en active Active
Also Published As
Publication number | Publication date |
---|---|
US20130256825A1 (en) | 2013-10-03 |
CN103364455A (zh) | 2013-10-23 |
US20160163766A1 (en) | 2016-06-09 |
EP2645091A1 (en) | 2013-10-02 |
US9865647B2 (en) | 2018-01-09 |
US9263500B2 (en) | 2016-02-16 |
JP2013213811A (ja) | 2013-10-17 |
CN103364455B (zh) | 2016-06-08 |
EP2645091B1 (en) | 2018-10-17 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP5736400B2 (ja) | ガスセンサを有する集積回路 | |
EP2720034B1 (en) | Integrated Circuit comprising a relative humidity sensor and a thermal conductivity based gas sensor | |
EP2554981B1 (en) | Integrated circuit with a gas sensor and method of manufacturing such an integrated circuit | |
EP2629084B1 (en) | Integrated circuit and manufacturing method | |
US7255001B1 (en) | Thermal fluid flow sensor and method of forming same technical field | |
US7391092B2 (en) | Integrated circuit including a temperature monitor element and thermal conducting layer | |
US7986027B2 (en) | Encapsulated metal resistor | |
CN105466463B (zh) | 传感器芯片 | |
EP2708878B1 (en) | Method of manufacturing an integrated circuit comprising a gas sensor | |
CN101713676A (zh) | 空气流量计 | |
US6626037B1 (en) | Thermal flow sensor having improved sensing range | |
US20190064094A1 (en) | Gas sensor and gas sensor package having the same | |
US6705160B2 (en) | Flow sensor | |
US7880580B2 (en) | Thermistor having doped and undoped layers of material | |
KR100821127B1 (ko) | 열전대를 구비하는 고전력 소자 및 그 제조방법 | |
JP5803435B2 (ja) | 赤外線温度センサ | |
US8866239B2 (en) | IC manufacturing method, IC and apparatus | |
KR102165935B1 (ko) | 전류센서 및 그의 제조방법 | |
KR20200126347A (ko) | 전류센서 및 그의 제조방법 | |
JP2013003068A (ja) | 流量センサ | |
JP2014016219A (ja) | 気体流量センサ | |
EP2863214B1 (en) | A thermal conductivity detector having a multi-layer sensing element, a gas sensor, and a method of gas sensing |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20140220 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20140304 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20140604 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20140701 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20141001 |
|
A02 | Decision of refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A02 Effective date: 20141021 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20150113 |
|
A911 | Transfer to examiner for re-examination before appeal (zenchi) |
Free format text: JAPANESE INTERMEDIATE CODE: A911 Effective date: 20150121 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20150324 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20150420 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 5736400 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
S111 | Request for change of ownership or part of ownership |
Free format text: JAPANESE INTERMEDIATE CODE: R313113 |
|
R350 | Written notification of registration of transfer |
Free format text: JAPANESE INTERMEDIATE CODE: R350 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
S531 | Written request for registration of change of domicile |
Free format text: JAPANESE INTERMEDIATE CODE: R313531 |
|
R350 | Written notification of registration of transfer |
Free format text: JAPANESE INTERMEDIATE CODE: R350 |
|
S111 | Request for change of ownership or part of ownership |
Free format text: JAPANESE INTERMEDIATE CODE: R313113 |
|
R350 | Written notification of registration of transfer |
Free format text: JAPANESE INTERMEDIATE CODE: R350 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |